SSM4K27CTTPL3

SSM4K27CTTPL3

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    SMD4

  • 描述:

    MOSFET N-CH 20V .5A CST4

  • 数据手册
  • 价格&库存
SSM4K27CTTPL3 数据手册
SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications • Small package • Low on-resistance: Unit: mm RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V DC ID 0.5 Pulse IDP 1.0 PD (Note 1) 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Power dissipation A JEDEC ⎯ Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ⎯ temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1M1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 1.1 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking (top view) 1 3 3 4 2 2 1 Polarity marking 1 2 3 4 SA 4 Electrode Layout (bottom view) Equivalent Circuit (top view) 4 3 1 2 Gate Source Drain Drain Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2005-02 1 2014-03-01 SSM4K27CT Electrical Characteristics (Ta=25°C) Characteristics Symbol Gate leakage current Min. Typ. Max. Unit VGS = ±12 V, VDS = 0 − − ±1 μA V (BR) DSS ID = 1 mA, VGS = 0 20 − − V (BR) DSX ID = 1 mA, VGS = -12 V 10 − − IDSS VDS = 20 V, VGS = 0 − − 10 μA Vth VDS = 3 V, ID = 1 mA 0.5 − 1.1 V ⏐Yfs⏐ VDS = 3 V, ID = 0.25 A (Note2) 0.8 1.6 − S ID = 0.25 A, VGS = 4 V (Note2) ⎯ 175 205 ID = 0.25 A, VGS = 2.5 V (Note2) ⎯ 200 260 ID = 0.10 A, VGS = 1.8 V (Note2) ⎯ 250 390 IGSS Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance RDS (ON) Test Condition V mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz − 174 − pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz − 25 − pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz − 31 − pF ton VDD = 10 V, ID = 0.25 A, − 10 − toff VGS = 0 to 2.5 V, RG = 4.7 Ω − 12 − Turn-on time Switching time Turn-off time ns Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V (b) VIN in out 0V (c) VOUT RG 0 10 μs 2.5 V VDD 10% VDD VDS (ON) VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 90% 90% 10% tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2014-03-01 SSM4K27CT ID – VDS 600 ID – VGS 10000 Common Source Ta = 25°C Pulse test 4V VDS = 3 V Drain current Drain current 1.8V 400 VGS = 1.2 V 200 0 0.2 0.4 0.6 0.8 Ta = 85°C 10 25°C 1 −25°C VDS 0.01 0 1.0 (V) 0.4 0.8 0.6 1.0 400 300 25°C Ta = 85°C −25°C 1.2 1.4 1.6 VGS (V) RDS (ON) – ID 300 VGS = 1.8 V Drain – Source on-resistance RDS (ON) (mΩ) ID = 0.25 A Common Source Pulse test 200 0.2 Gate - Source voltage RDS (ON) – VGS 500 Drain – Source on-resistance RDS (ON) (mΩ) 100 0.1 Drain - Source voltage 100 Pulse test ID 2.5V 0 Common Source 1000 (mA) (mA) 800 ID 1000 250 2.5V 200 4V 150 100 Common Source 50 Ta = 25°C Pulse test 0 0 2 4 6 Gate - Source voltage 8 10 0 12 0 0.2 VGS (V) 0.4 0.6 Drain current ID RDS (ON) – Ta Vth (V) Common Source Pulse test 400 ID = 0.1A / VGS = 1.8 V 300 200 Gate threshold voltage Drain – Source on-resistance RDS (ON) (mΩ) (A) 1.2 Common Source 0 −50 1.0 Vth – Ta 500 100 0.8 0.25 A / 4 V 0.25 A / 2.5 V 0 50 Ambient temperature 100 Ta (°C) ID = 1mA 0.8 0.6 0.4 0.2 0 150 VDS = 3V 1.0 −25 0 25 50 75 Ambient temperature 3 100 Ta 125 150 (°C) 2014-03-01 |Yfs| – ID 30 C – VDS 500 300 10 3 (pF) 1 C Ciss 100 30 Capacitance Forward transfer admittance ⎪Yfs ⎪ (S) SSM4K27CT 0.3 0.1 Common Source VDS = 3V 10 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 3 Ta = 25°C 0.03 Coss Crss Pulse test 0.01 1 10 100 Drain current 1000 ID 1 0.1 10000 1 (mA) Dynamic Input Characteristic (ns) 7 t 6 VDD = 10 V 5 Switching time (V) VGS Common Source VDD = 10 V VGS = 0 ∼ 2.5V Ta = 25°C RG = 4.7 Ω 8 4 3 2 Common Source ID = 0.5 A Ta = 25°C 1 0 1 2 3 Total gate charge 4 Qg 100 toff tf 10 ton tr 5 1 0.01 (nC) 0.1 1 Drain current IDR – VDS 1.0 (A) Power dissipation PD (W) IDR Drain reverse current Mounted on FR4 board Ta = 25°C Pulse test D 0.6 IDR G S 0.4 0.2 0 -0.2 10 (A) PD – Ta Common Source 0.8 ID 1.2 VGS = 0V 0 (V) 1000 9 0 100 VDS t – ID 10 Gate-Source voltage 10 Drain – Source voltage -0.4 -0.6 Drain-Source voltage -0.8 VDS -1.0 0.8 0.6 0.4 0.2 0 0 -1.2 (V) (25.4 mm × 25.4 mm × 1.6 mm, 2 Cu Pad: 645 mm ) 1.0 50 Ambient temperature Ta 4 150 100 (°C) 2014-03-01 SSM4K27CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 5 2014-03-01
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