SSM5N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N15FE
High Speed Switching Applications Analog Switch Applications
• • Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm
(Q1, Q2 Common)
Drain-Source voltage Gate-Source voltage Drain current
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 5)
0.3 mm
Note:
JEDEC JEITA TOSHIBA
― ― 2-2P1B
Weight: 0.003 g (typ.)
Marking
5 4
0.45 mm
Equivalent Circuit (top view)
5 4
DP
1 2 3
Q1
Q2
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff VDD = 5 V, ID = 10 mA, VGS = 0~5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V Min ⎯ 30 ⎯ 0.8 25 ⎯ ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 2.2 4.0 7.8 3.6 8.8 50 180 Max ±1 ⎯ 1 1.5 ⎯ 4.0 7.0 ⎯ ⎯ Unit μA V μA V mS Ω pF pF pF ns
⎯ ⎯
⎯
⎯ ⎯ ⎯
Switching Time Test Circuit
(a) Test circuit
5V 0 10 μs VDD = 5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL 0V 10%
(b) VIN
5V 90%
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device.
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(Q1, Q2 common)
ID – VDS
250 Common Source 200 10 4 3 Ta = 25°C 100 1000 Common Source VDS = 3 V Ta = 100°C 10 25°C 1 −25°C
ID – VGS
Drain current ID (mA)
2.7 150 2.5 100 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2
Drain current ID (mA)
0.1
0.01 0
1
2
3
4
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) – ID
10 Common Source Ta = 25°C 8 5 6
RDS (ON) – VGS
Common Source ID = 10 mA
Drain-Source on resistance RDS (ON) (Ω)
Drain-Source on resistance RDS (ON) (Ω)
4 Ta = 100°C 25°C 2 −25°C 1
6
VGS = 2.5 V
3
4 4V 2
0 0
40
80
120
160
200
0 0
2
4
6
8
10
Drain current ID (mA)
Gate-Source voltage
VGS (V)
RDS (ON) – Ta
8 7 Common Source ID = 10 mA 2 1.8 Common Source ID = 0.1 mA VDS = 3 V
Vth – Ta
Vth (V) Gate threshold voltage
75 100 125 150 VGS = 2.5 V 4V 0 25 50
Drain-Source on resistance RDS (ON) (Ω)
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25
6 5 4 3 2 1 0 −25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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(Q1, Q2 common)
⎪Yfs⎪ – ID
1000 Common Source 500 V DS = 3 V 300 Ta = 25°C 250 Common Source VGS = 0 V Ta = 25°C D 150 IDR S 100
IDR – VDS
(mA) Drain reverse current IDR
Forward transfer admittance ⏐Yfs⏐ (mS)
200
100 50 30
G
10 5 3
50
1 0
10
100
1000
0 0
−0.2
−0.4
−0.6
−0.8
−1
−1.2
−1.4
Drain current ID (mA)
Drain-Source voltage
VDS (V)
t – ID
10000 5000 3000 toff 1000 500 300 tf Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 10000 5000 3000
t – ID
Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C toff 1000 500 300 ton 100 50 30 tr tf
Switching time t (ns)
100 50 30 ton tr
10 0.1
Switching time t (ns)
1 10 100
10 0.1
1
10
100
Drain current ID (mA)
Drain current ID (mA)
C – VDS
100 50 30 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 250
PD* – Ta
(mW)
Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t 2 Cu Pad: 0.135 mm × 5)
200
(pF)
10 5 3 Ciss Coss Crss 1 0.5 0.3
Drain power dissipation PD*
100
Capacitance C
150
100
50
0.1 0.1
1
10
0 0
20
40
60
80
100
120
140
160
Drain-Source voltage
VDS (V)
*: Total rating
Ambient temperature Ta (°C)
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RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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