SSM6E01TU

SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • • P-channel MOSFET and N-channel MOSFET incorporated into one package. Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation Unit: mm Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating −12 ±12 −1.0 −2.0 Unit V V A Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating 20 10 0.05 0.2 Unit V V A JEDEC JEITA TOSHIBA ― ― ― Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 0.5 150 −55 to 150 Unit W °C °C Weight: 7.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: Pulse width limited by maximum channel temperature. Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 Q1 KTA 1 2 3 1 Q2 2 3 1 2007-11-01 SSM6E01TU Handling Precaution This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices (that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, containers and other objects which may come into direct contact with devices should be made of anti-static materials. Thermal resistance Rth (j-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2007-11-01 SSM6E01TU Q1 Electrical Characteristics (Ta = 25°C) Characteristics Forward voltage (diode) Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Symbol VDSF IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Test Condition IDR = 1.0 A, VGS = 0 V VGS = ±10 V, VDS = 0 ID = −1 mA, VGS = 0 VDS = −12 V, VGS = 0 VDS = −3 V, ID = −0.1 mA VDS = −3 V, ID = −0.5 A ID = −0.5 A, VGS = −4 V ID = −0.5 A, VGS = −2.5 V (Note 3) (Note 3) (Note 3) Min ⎯ ⎯ −12 ⎯ −0.4 1.3 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.5 125 180 310 Max 1.2 ±1 ⎯ −1 −1.1 ⎯ 160 240 ⎯ Unit V μA V μA V S mΩ pF VDS = −10 V, VGS = 0, f = 1 MHz Note 3: Pulse test Q2 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Gate-Source resistance Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss RGS Test Condition VGS = 10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V (Note 3) (Note 3) Min ⎯ 20 ⎯ 0.7 25 ⎯ ⎯ 0.7 Typ. ⎯ ⎯ ⎯ ⎯ 50 4 11 1.0 Max 15 ⎯ 1 1.3 ⎯ 10 ⎯ 1.3 Unit μA V μA V mS Ω pF MΩ VDS = 3 V, VGS = 0, f = 1 MHz VGS = 0~10 V Note 3: Pulse test Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = ±100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 3 2007-11-01 SSM6E01TU Q1 (Pch MOSFET) ID – VDS −2 −4 V −10 V −10000 −2.0 V −1.8 V −1000 Common source VDS = −3 V ID – VGS Drain current ID (mA) Drain current ID (A) −1.5 −1.7 V −1 Ta = 25°C −100 −25°C 100°C −10 −1 −0.5 Common source Ta = 25°C 0 0 −0.5 −1 −1.5 −2 −0.1 −0.01 0 −0.5 −1 −1.5 −2 −2.5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 0.5 Common source Ta = 25°C 0.4 0.8 1 RDS (ON) – VGS Common source ID = −0.5 A Drain-Source on resistance RDS (ON) (Ω) 0.3 Drain-Source on resistance RDS (ON) (Ω) 0.6 0.2 −2.5 V 0.4 25°C 0.2 −25°C Ta = 100°C 0.1 −4.0 V 0 0 −0.5 −1.0 −1.5 −2.0 0 0 −2 −4 −6 −8 −10 −12 Drain current ID (A) Gate-Source voltage VGS (V) RDS (ON) – Ta 0.5 Common source ID = −0.5 A −1 Vth – Ta Common source VDS = −3 V ID = −0.1 mA Vth (V) Gate threshold voltage 100 125 150 −2.5 V −4 V 25 50 75 Drain-Source on resistance RDS (ON) (Ω) 0.4 −0.8 0.3 −0.6 0.2 −0.4 0.1 −0.2 0 −25 0 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 4 2007-11-01 SSM6E01TU Q1 (Pch MOSFET) ⎪Yfs⎪ – ID (S) C – VDS 10 Forward transfer admittance ⎪Yfs⎪ (pF) 1000 Ciss Coss 100 Crss Common source VGS = 0 f = 1 MHz Ta = 25°C −1 −10 −100 1 0.1 Capacitance C −10 −100 −1000 −10000 0.01 −1 10 −0.1 Drain current ID (mA) Drain-Source voltage VDS (V) Dynamic input characteristics −10 Common source 500 t – ID Common source VDD = −10 V VGS = 0 to −2.5 V RG = 4.7 Ω Ta = 25°C toff VGS (V) −8 ID = −1.0 A Ta = 25°C Switching time t (ns) Gate-Source voltage −6 VDD = −10 V −4 100 tf −2 ton 10 0 0 2 4 6 8 5 −0.01 tr −0.1 −1 Total gate charge Qg (nC) Drain current ID (A) IDR – VDS −2 Common source VGS = 0 V −1.6 Ta = 25°C Drain reveres current IDR (A) D G −1.2 S −0.8 −0.4 0 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS (V) 5 2007-11-01 SSM6E01TU Q2 (Nch MOSFET) ID – VDS 100 2.5 100 2.0 Common source Ta = 25°C 80 80 4.0 2.5 2.2 2.0 ID – VDS (low-voltage area) Drain current ID (mA) Drain current ID (mA) 1.9 60 1.8 40 Common source Ta = 25°C 60 1.8 40 1.7 1.6 1.6 20 VGS = 1.4 V 20 VGS = 1.4 V 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Drain-Source voltage VDS (V) Drain-Source voltage VDS (V) IDR – VDS 100 Common source VGS = 0 Ta = 25°C D 1000 Common source VDS = 3 V 100 ID – VGS (mA) Drain reverse current IDR Drain current ID (mA) 10 G 1 S 0.1 IDR 10 Ta = 100°C 1 25°C −25°C 0.1 0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0.01 0 0.5 1 1.5 2 2.5 3 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) ⎪Yfs⎪ – ID 300 Common source VDS = 3 V 100 Common source 50 VGS = 0 f = 1 MHz Ta = 25°C C – VDS Forward transfer admittance ⎪Yfs⎪ (mS) Ta = 25°C 100 (pF) Capacitance C 50 30 30 10 5 3 Ciss Coss 10 Crss 1 0.1 5 1 3 5 10 30 50 100 0.3 1 3 10 30 Drain current ID (mA) Drain-Source voltage VDS (V) 6 2007-11-01 SSM6E01TU Q2 (Nch MOSFET) RDS (ON) – ID 10 Common source Ta = 25°C 8 10000 5000 t – ID Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C toff tf Drain-Source on resistance RDS (ON) (Ω) Switching time t (ns) 3000 6 1000 500 300 4 2.5 ton 100 50 tr 2 VGS = 4 V 30 0.1 20 40 60 80 100 0 0 0.3 1 3 10 30 100 Drain current ID (mA) Drain current ID (mA) RDS (ON) – Ta 10 Common source ID = 10 mA 8 Drain-Source on resistance RDS (ON) (Ω) 6 2.5 4 2 VGS = 4 V 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 7 2007-11-01 SSM6E01TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-11-01