SSM6J212FE

SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications • • 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID (Note 1) IDP (Note 1) PD (Note 2) t = 10s Tch Tstg Rating -20 ±8 -4.0 -8.0 500 700 150 −55 to 150 Unit V V A 1,2,5,6 ： Drain mW °C °C 3 ： Gate ： Source Drain power dissipation Channel temperature Storage temperature range ES6 JEDEC 4 ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the Weight : 3mg ( typ. ) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking (Top View) 6 5 4 Equivalent Circuit 6 5 4 PQ 1 2 3 1 2 3 1 2009-12-09 SSM6J212FE Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol Test Conditions Min -20 (Note 4) -15 ⎯ ⎯ -0.3 (Note 3) (Note 3) (Note 3) (Note 3) (Note 3) 4.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 9.4 35.3 41.3 48.6 56.7 970 127 109 47 143 14.1 1.7 2.4 0.87 Max ⎯ ⎯ -1 ±1 -1.0 ⎯ 40.7 49.0 65.4 94.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 V nC ns pF mΩ Unit V V μA μA V S V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V IDSS IGSS Vth ⏐Yfs⏐ VDS = -20 V, VGS = 0 V VGS = ±8 V, VDS = 0 V VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -1.0 A ID = -3.0 A, VGS = -4.5 V Drain–source ON-resistance RDS (ON) ID = -2.0 A, VGS = -2.5 V ID = -1.0 A, VGS = -1.8 V ID = -0.5 A, VGS = -1.5 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Total gate charge Gate-source charge Gate-drain charge Drain-source forward voltage Turn-on time Turn-off time Ciss Coss Crss ton toff Qg Qgs1 Qgd VDSF VDS = -10 V, VGS = 0 V f = 1 MHz VDD = -10 V, ID = -2.0 A VGS = 0 to -2.5 V, RG = 4.7 Ω VDD = -10 V, IDD = -4.0 A, VGS = -4.5 V ID = 4.0 A, VGS = 0 V (Note 3) ⎯ ⎯ ⎯ Note3: Pulse test Note4: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximun rating of drain-source voltage Switching Time Test Circuit (a) Test Circuit 0 OUT IN RG RL VDD −2.5 V 10% (b) VIN 0V 90% −2.5V 10 μs (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and drain power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration 2 2009-12-09 SSM6J212FE ID – VDS -8.0 -4.5 V -1.8 V VGS=-1.5 V -10 ID – VGS Common Source VDS = -3 V (A) -2.5 V ID ID (A) -6.0 -1 Drain current -0.1 Ta = 100 °C -4.0 Drain current -0.01 − 25 °C -0.001 -2.0 0 Common Source Ta = 25 °C 0 -0.2 -0.4 -0.6 -0.8 -1 25 °C -0.0001 0 -1.0 -2.0 -3.0 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – VGS 140 120 ID =-2.0A Common Source 140 120 Common Source Ta = 25°C RDS (ON) – ID Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 100 80 60 40 100 80 -1.5 V Ta = 100 °C 25 °C 60 40 -1.8 V -2.5 V -4.5 V 20 0 − 25 °C 0 -2 -4 -6 -8 20 0 0 -2.0 -4.0 -6.0 -8.0 Gate–source voltage VGS (V) Drain current ID (A) RDS (ON) – Ta 140 120 Common Source -1.0 Vth – Ta Vth (V) Common Source VDS = -3 V ID = -1 mA Drain–source ON-resistance RDS (ON) (mΩ) 100 80 60 40 ID = -3.0 A / VGS = -4.5 V 20 0 −50 -1.0 A / -1.8 V -2.0 A / -2.5 V -0.5 A / -1.5 V Gate threshold voltage -0.5 0 50 100 150 0 −50 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2009-12-09 SSM6J212FE (S) 100 |Yfs| – ID (A) Common Source VDS = -3 V Ta = 25°C IDR – VDS 10 Common Source VGS = 0 V D G IDR ⎪Yfs⎪ 30 Forward transfer admittance 10 Drain reverse current IDR 1 S 0.1 3 1 Ta =100 °C 0.01 −25 °C 0.3 25 °C 0.001 0 0.1 -0.01 -0.1 -1 -10 0.2 0.4 0.6 0.8 1.0 1.2 Drain current ID (A) Drain–source voltage VDS (V) 10000 5000 C – VDS 10000 toff t – ID Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω (pF) 3000 1000 1000 500 300 Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V -1 -10 -100 Ciss tf Capacitance t Switching time 100 100 50 30 (ns) C ton 10 tr 10 -0.1 1 -0.001 -0.01 -0.1 -1 -10 Drain–source voltage VDS (V) Drain current ID (A) Dynamic Input Characteristic -8 Common Source ID = -4.0 A Ta = 25°C VGS Gate–source voltage (V) -6 -4 VDD = - 10 V VDD = - 16 V -2 0 0 10 20 30 Total Gate Charge Qg (nC) 4 2009-12-09 SSM6J212FE rth – tw Transient thermal impedance rth (°C/W) 1000 600 PD – Ta Drain power dissipation PD (mW) Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2) 500 100 400 300 10 200 Single pulse Mounted on FR4 board 100 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) 1 0.001 0.01 0.1 1 10 100 1000 0 0 50 100 150 Pulse Width tw (s) Ambient temperature Ta (°C) 5 2009-12-09 SSM6J212FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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