SSM6J21TU

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J21TU High Current Switching Applications • • Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 mΩ (max) (@VGS = -2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -12 ±12 -3 -6 500 150 −55~150 Unit V V A mW °C °C 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC - Note: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 2-2T1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit 6 5 4 KPA 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. 1 2007-11-01 SSM6J21TU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±10 V, VDS = 0 ID = -1 mA, VGS = 0 ID = -1 mA, VGS = +8 V VDS = -12 V, VGS = 0 VDS = -3 V, ID =-0.1 mA VDS = -3 V, ID = -1.5 A ID = -1.5 A, VGS = -4 V ID = -1.5 A, VGS = -2.5 V (Note2) (Note2) (Note2) Min − -12 -4 − -0.5 4.3 − Typ. − − − − − − 35 50 1300 330 400 68 76 Max ±1 − − -1 -1.1 − 50 88 − − − − − Unit μA V μA V S mΩ pF pF pF ns − − − − − − VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = 0, f = 1 MHz − Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 −2.5 V 10 μs VDD = -10 V RG = 4.7 Ω < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C ID (b) VIN out 0V 10% 90% in RG VDD −2.5 V VDS (ON) 90% 10% tr ton (c) VOUT VDD tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6J21TU -4V -6 -2.5V -5 ID – VDS Common Source Ta = 25°C -10000 Common Source VDS = -3 V -1000 ID – VGS (A) ID -4 -1.8V -3 (mA) -100 Ta = 100°C -10 25°C -1 −25°C Drain current -2 VGS=-1.5Ｖ -1 Drain current 0 -0.5 -1 -1.5 -2 -0.1 0 -0.01 0 -0.5 -1 -1.5 -2 -2.5 Drain-Source voltage VDS (V) Gate-source VGS (V) RDS (ON) – ID 100 Common Source Ta = 25°C RDS (ON) – VGS 200 ID = -1.5 A Common Source Ta=25℃ 150 Drain-Source on resistance RDS (ON) (mΩ) 80 60 -2.5V Drain-Source on resistance RDS (ON) (mΩ) 100 40 -4V 50 20 0 0 -2 -4 -6 -8 0 0 -2 -4 -6 -8 -10 -12 Drain current ID (A) Gate-Source voltage VGS (V) RDS (ON) – Ta 100 Common Source -1.2 Vth – Ta Common Source Vth (V) ID =-1.5A Drain-Source on resistance RDS (ON) (mΩ) 80 -2.5 V 60 -1.0 VDS = -3V ID = -0.1 mA Gate threshold voltage -0.8 -0.6 40 VGS = -4 V -0.4 20 -0.2 0 −50 0 50 100 150 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM6J21TU |Yfs| – ID (S) -30 -10 5000 3000 C – VDS ⎪Yfs⎪ (pF) Ciss 1000 500 300 Forward transfer admittance -3 -1 -0.3 -0.1 Common Source -0.03 -0.01 1 VDS = -3V Ta = 25°C -10 -100 -1000 -10000 C Coss Crss Capacitance 100 50 30 Common Source Ta = 25°C f = 1 MHz VGS = 0 V -1 -10 -100 10 -0.1 Drain current ID (mA) Drain-Source voltage VDS (V) Dynamic Input Characteristic -10 10000 t – ID Common Source VDD = -10 V VGS = 0∼-2.5V Ta = 25°C RG = 4.7 Ω 1000 (V) -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 10 20 Common Source ID = -3 A Ta = 25°C 30 35 10 0.01 VDD = -10V VGS Gate-Source voltage スイッチング時間 t (ns) tf 100 toff ton tr 0.1 1 10 Total gate charge Qg (nC) Drain current ID (A) IDR – VDS -8 Common Source (A) VGS = 0 Ta = 25°C -6 D IDR S IDR Drain reverse current G -4 -2 0 0 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage VDS (V) 4 2007-11-01 SSM6J21TU rth – tw 1000 rth (°C /W) Single Pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 Transient thermal impedance 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 645 mm ) PD – Ta 1.2 Mounted on FR4 board -30 (W) -10 1 t = 10 s 0.8 (A) -3 ID 10 ms* Drain power dissipation ID max (Continuous) 1 ms* PD ID max (pulsed) * (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ） 0.6 DC 0.4 Drain current -1 DC operation -0.3 Ta = 25°C 10s* 0.2 -0.1 *:Single nonrepetive Pulse -0.03 Ta = 25°C Curves must be derated linealy -0.01 -0.1 with increase in temperture. -0.3 -1 -3 -10 -30 -100 0 0 50 100 150 Ambient temperature Ta (°C) Drain-Source voltage VDS (V) 5 2007-11-01 SSM6J21TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01