SSM6J402TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J402TU
○ DC/DC Converter Application
○ High-Speed Switching Applications
unit: mm
2.1±0.1
•
4.0 V drive
•
Low ON-resistance : RDS(ON) = 225mΩ max (@VGS = −4 V)
Symbol
Rating
Unit
Drain–source voltage
VDSS
−30
V
Gate–source voltage
VGSS
±20
V
DC
ID
−2.0
Pulse
IDP
−4.0
PD(注 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Drain current
Drain power dissipation
2
5
3
4
A
Note 1: Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
+0.1
0.3-0.05
6
0.166±0.05
Characteristic
1.3±0.1
Absolute Maximum Ratings (Ta = 25˚C)
1
0.7±0.05
2.0±0.1
: RDS(ON) = 117mΩ max (@VGS = −10 V)
0.65 0.65
1.7±0.1
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = −1 mA, VGS = 0 V
−30
⎯
⎯
V (BR) DSX
ID = −1 mA, VGS = 20 V
−15
⎯
⎯
Drain cutoff current
IDSS
VDS = −30 V, VGS = 0 V
⎯
⎯
−1
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = −5 V, ID = −1 mA
−1.2
⎯
−2.6
V
Forward transfer admittance
|Yfs|
VDS = −5 V, ID = −1 A
(Note2)
1.6
3.1
⎯
S
Drain–source ON-resistance
RDS (ON)
ID = −1 A, VGS = −10 V
(Note2)
⎯
80
117
ID = −0.5 A, VGS = −4 V
(Note2)
⎯
160
225
⎯
280
⎯
⎯
80
⎯
Drain–source breakdown voltage
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
⎯
45
⎯
Total Gate Charge
Qg
⎯
5.3
⎯
Gate-Source Charge
Qgs
⎯
4.1
⎯
Gate-Drain Charge
Qgd
⎯
1.2
⎯
Switching time
VDS = −15 V, VGS = 0 V, f = 1 MHz
VDS = −15V, ID = −2.0 A
VGS = −10 V
Turn-on time
ton
VDD = −15 V, ID = −1 A
⎯
16
⎯
Turn-off time
toff
VGS = 0 to −4 V, RG = 10 Ω
⎯
35
⎯
⎯
0.8
1.2
Drain–source forward voltage
VDSF
ID = 2 A, VGS = 0 V
Note 2: Pulse test
(Note2)
V
mΩ
pF
nC
ns
V
Start of commercial production
2008-01
1
2014-03-01
SSM6J402TU
Switching Time Test Circuit
(a) Test Circuit
0
OUT
IN
RG
−4 V
(b) VIN
10 μs
VDD = −15 V
RG = 10 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
0V
10%
90%
−4 V
VDS (ON)
90%
(c) VOUT
VDD
10%
VDD
tr
ton
Marking
6
tf
toff
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
KPE
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6J402TU
ID – VDS
ID – VGS
-5
-10
-6V
-10 V
Common Source
VDS = -5 V
ID
-3.6V
-3
VGS = -3.3V
-2
-1
0
-1
(A)
-4
-0.1
Drain current
Drain current
ID
(A)
-4 V
Ta = 100 °C
25 °C
-0.01
−25 °C
-0.001
Common Source
Ta = 25 °C
0
-0.2
-0.4
-0.6
Drain–source voltage
VDS
-0.0001
0
-1
-0.8
(V)
-0.5
-1.0
-2.0
-1.5
-2.5
Gate–source voltage
VGS
-3.5
-4.0
(V)
RDS (ON) – ID
RDS (ON) – VGS
500
500
ID = -1 A
Common Source
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (mΩ)
Common Source
Drain–source ON-resistance
RDS (ON) (mΩ)
-3.0
400
300
25 °C
200
Ta =100 °C
100
400
300
200
VGS = -4.0V
100
-10V
−25 °C
0
0
-4
-2
-6
Gate–source voltage
-8
VGS
0
-10
0
(V)
-2
-1
Drain current
RDS (ON) – Ta
(A)
-2.0
Common Source
Vth (V)
Common Source
400
Gate threshold voltage
Drain–source ON-resistance
RDS (ON) (mΩ)
ID
-5
Vth – Ta
500
300
ID = -0.5A / VGS = -4.0 V
200
100
0
−50
-4
-3
-1.0A / -10V
VDS = -5 V
ID = -1 mA
-1.5
-1.0
-0.5
0
0
50
Ambient temperature
Ta
−50
150
100
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM6J402TU
IDR – VDS
|Yfs| – ID
10
(S)
10
IDR
Ta = 25 °C
3
1
0.3
0.1
-0.01
Common Source
VGS = 0 V
(A)
VDS = -5 V
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
Common Source
-1
-0.1
Drain current
ID
D
1
IDR
G
0.1
S
Ta = 100 °C
0.01
25 °C
0.001
−25 °C
0.0001
0
-10
0.2
(A)
0.4
0.6
Drain–source voltage
0.8
600
Common Source
VDD = -15 V
VGS = 0 ∼ -4 V
Ta = 25 °C
RG = 10 Ω
toff
(ns)
500
300
Switching time
100
Coss
50
Crss
Common Source
30
100
10
ton
tr
Ta = 25°C
f = 1 MHz
VGS = 0 V
10
-0.1
tf
t
Ciss
C
(pF)
1.2
(V)
t – ID
C – VDS
1000
Capacitance
1.0
VDS
-1
-10
Drain–source voltage
1
0.01
-100
VDS
(V)
0.1
Drain current
1
ID
10
(A)
Dynamic Input Characteristic
10
ID = -2.0 A
8
Ta = 25°C
Gate–source voltage
VGS
(V)
Common Source
6
VDD=-24V
VDD=-15V
4
2
0
0
2
4
Total Gate Charge
8
6
Qg
10
(nC)
4
2014-03-01
SSM6J402TU
Transient thermal impedance rth (°C/W)
– tw
PD – Ta
Drain power dissipation PD (mW)
rth
100
Single Pulse
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
100
10
1
0.001
0.01
0.1
1
Pulse width
100
10
tw
1000
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
t = 10 s
800
600
DC
400
200
0
-40
1000
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2014-03-01
SSM6J402TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
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limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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