SSM6J50TU

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications • • Compact package suitable for high-density mounting Low on-resistance: Ron = 205mΩ (max) (@VGS = -2.0 V) Ron = 100mΩ (max) (@VGS = -2.5 V) Ron = 64mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±10 -2.5 -5 500 150 −55~150 Unit V V A mW °C °C 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC - Note: JEITA Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2T1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 7 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit 6 5 4 KPB 1 2 3 1 2 3 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J50TU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±8 V, VDS = 0 ID = −10 mA, VGS = 0 ID = −10 mA, VGS = +10 V VDS = −20 V, VGS = 0 VDS = −10 V, ID = −0.2 mA VDS = −10 V, ID = −1.5 A ID = −1.5 A, VGS = −4.5 V Drain-Source on-resistance RDS (ON) ID = −1.5 A, VGS = −2.5 V ID = −1.5 A, VGS = −2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min ⎯ -20 -10 ⎯ −0.5 3.1 ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 6.2 49 73 105 800 120 160 15 51 Max ±10 ⎯ ⎯ −10 −1.2 ⎯ 64 100 205 ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF ns Unit μA V μA V S mΩ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDD = −10 V, ID = −1.5 A, VGS = 0~−5 V, RG = 4.7 Ω Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 −5 V 10 μs VDD = -10 V RG = 4.7 Ω D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25°C ID (b) VIN out 0V 10% 90% in RG VDD −5 V VDS (ON) 90% 10% tr ton (c) VOUT VDD tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-200 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM6J50TU ID-VDS -5 -10 -6.0 -2.5 -3.0 Common Source Ta=25°C -2.0 -1.8 ID-VGS -10 Common Source VDS=-3V Ta=25°C -4 Drain current ID (A) Drain current ID (A) Ta=100°C -3 -1.6 -1 25°C -55°C -2 -0.1 -1 VGS=-1.4V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 0 -0.5 -1 -1.5 -2 -2.5 Drain-Source voltage VDS(V) Gate-Source voltage VGS(V) RDS(ON)-ID 1000 VDS-VGS -2.0 Common Source Ta=25°C Drain-Source on-resistance RDS(ON)　（ｍΩ） Drain-Source voltage VDS(V) -1.6 VGS=-2.0V 100 -2.5 -1.2 -0.8 -1.5 -4.5 Common Source Ta=25°C -0.4 -0.75 ID=-2.5A 10 0 -0.3 -1 -3 -10 -0.1 0 -2 -4 -6 -8 -10 Drain current ID (A) Gate-Source voltage VGS(V) RDS(ON)-Ta 160 VGS=-2.0V Vth-Ta -2 Gate threshold voltage Vth(V) Drain-Source on-resistance RDS(ON)　（ｍΩ） 120 VGS=-2.5V -1.6 -1.2 80 -0.8 Common Source VDS=-10V ID=-200μA Ta=25°C VGS=-4.5V 40 Common Source ID=-1.5A Ta=25°C -0.4 0 -80 -40 0 40 80 120 160 0 Ambient temperature Ta(°C) -80 -40 0 40 80 120 160 Ambient temperature Ta(°C) 3 2007-11-01 SSM6J50TU |Yfs|-ID 100 Common Source VDS=-10V Ta=25°C C-VDS 10000 Forward transfer admittance Capacitance C (pF) 10 Ta=-55°C 1000 Ciss |Yfs|(S) 100°C 25°C 1 Coss 100 Common Source f=1MHz VGS=0V Ta=25°C Crss 0.1 -0.1 -0.3 -1 -3 -10 10 -0.1 -0.3 -1 -3 -10 -30 -100 Drain current ID (A) Drain-Source voltage VDS(V) IDR-VDS -10 -10 -5.0 -3.0 -1.0 VGS=0V Drain reverse current IDR (A) -3.0 -1.0 -0.3 Common Source Ta=25°C - 0.1 0 0.2 Drain-Source voltage VDS(V) 0.4 0.6 0.8 1 4 2007-11-01 SSM6J50TU rth – tw 1000 rth (°C /W) Single Pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 Transient thermal impedance 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 645 mm ) -30 PD – Ta 1.2 (W) -10 Mounted on FR4 board ID max (pulsed) * 1 ms* 10 ms* 1 t = 10 s 0.8 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) (A) -3 ID -1 DC operation -0.3 Ta = 25°C 10s* Drain power dissipation Drain current PD 0.6 ID max (Continuous) DC 0.4 -0.1 *:Single nonrepetive Pulse -0.03 Ta = 25°C Curves must be derated linearly -0.01 -0.1 with increase in temperature. -0.3 -1 -3 -10 -30 -100 0.2 0 0 50 100 150 Ambient temperature VDS (V) Ta (°C) Drain-Source voltage 5 2007-11-01 SSM6J50TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01