SSM6K201FE

SSM6K201FE Tentative TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K201FE Power Management Switch Applications High Speed Switching Applications • • 1.8 V drive Low ON-resistance: Ron = 186 mΩ (max) (@VGS = 1.8V) Ron = 119 mΩ (max) (@VGS = 2.5V) Ron = 91 mΩ (max) (@VGS = 4.0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 12 2.3 4.6 500 150 −55~150 Unit V V A ES6 W °C °C 1, 2, 5, 6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ― ― 2-2N1A Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Condition ID = 1 mA, VGS = 0 ID = 1 mA, VGS = –12 V VDS = 20 V, VGS = 0 VGS = ± 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 1.0 A ID = 1.0 A, VGS = 4.0 V Drain–source ON-resistance RDS (ON) ID = 0.5 A, VGS = 2.5 V ID = 0.2 A, VGS = 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Ciss Coss Crss ton toff VDSF (Note2) (Note2) (Note2) (Note2) Min 20 10 ⎯ ⎯ 0.4 2.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ (Note2) ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 5.5 71 91 121 220 51 42 12 10 – 0.85 Max ⎯ ⎯ 1 ±1 1.0 ⎯ 91 119 186 ⎯ ⎯ ⎯ ⎯ ⎯ – 1.20 pF pF pF ns V mΩ Unit V V µA µA V S VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 2.0 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ID = − 2.3 A, VGS = 0 V Drain–source forward voltage Note2: Pulse test 1 2006-04-25 SSM6K201FE Switching Time Test Circuit (a) Test Circuit OUT IN 0V RG 10 µs VDD = 10 V RG = 4.7 Ω < D.U. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% (b) VIN 2.5 V 90% 2.5 V 0 VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 KC 1 2 3 1 2 3 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.8 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2006-04-25 SSM6K201FE ID – VDS 5 10 V 4.0 V 2.5 V 1.8 V 10 Common Source VDS = 3 V 1 ID – VGS Drain current ID (A) 4 3 1.5 V 2 Drain current ID (A) 0.1 Ta = 85 °C 0.01 − 25 °C 25 °C 1 VGS = 1.2 V Common Source Ta = 25°C 0.001 0 0 0.2 0.4 0.6 0.8 1 0.0001 0 1.0 2.0 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – VGS 200 ID = 1.0 A Common Source 150 Ta = 25°C 200 Ta = 25°C RDS (ON) – ID Common Source Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 150 1.8 V 100 2.5 V VGS = 4.0 Ｖ 50 100 50 0 0 2 4 6 8 10 0 0 1 2 3 4 5 Gate–source voltage VGS (V) Drain current ID (A) RDS (ON) – Ta 300 1.0 Vth – Ta Gate threshold voltage Vth (V) Common Source Drain–source on-resistance RDS (ON) (mΩ) 250 200 150 0.2 A / 1.8 V 0.5 A / 2.5 V 0.5 100 ID = 1.0 A / VGS = 4.0 V 50 Common source VDS = 3 V ID = 1 mA 0 −50 0 50 100 150 0 −50 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2006-04-25 SSM6K201FE 10 |Yfs| – ID Common Source VDS = 5 V Ta = 25°C IDR – VDS 10 Common Source VGS = 0 V 1 Ta = 25°C (S) Forward transfer admittance ⎪Yfs⎪ (A) D IDR S Drain reverse current IDR 3 G 1 0.1 Ta =85 °C 0.3 0.01 25 °C −25 °C 0.001 0 –0.2 –0.4 –0.6 –0.8 –1.0 0.1 0.01 0.1 1 10 Drain current ID (A) Drain–source voltage VDS (V) 1000 C – VDS 1000 t – ID Common Source VDD = 10 V VGS = 0 to 2.5 V 500 (pF) (ns) 300 Ciss toff 100 tf Ta = 25°C RG = 4.7 Ω Capacitance C 100 50 30 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 10 0.1 Coss Crss Switching time t 10 ton tr 1 10 100 1 0.01 0.1 1 10 Drain–source voltage VDS (V) Drain current ID (A) PD – Ta 1000 Drain Power Dissipation PD (mW) Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm P PadT645 mm ) Cu – : D a 800 600 400 200 0 –40 –20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2006-04-25 SSM6K201FE 5 2006-04-25