SSM6K204FE,LF

SSM6K204FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K204FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • 1.5V drive Low ON-resistance: Unit: mm Ron = 307 mΩ (max) (@VGS = 1.5V) Ron = 214 mΩ (max) (@VGS = 1.8V) Ron = 164 mΩ (max) (@VGS = 2.5V) Ron = 126 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V DC ID 2.0 Pulse IDP 4.0 PD (Note 1) 500 Drain current Drain power dissipation A mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 1, 2, 5, 6 : Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 3 : Gate 4 : Source ES6 JEDEC ― JEITA ― 2-2N1A TOSHIBA Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain–source breakdown voltage Min Typ. Max Unit V (BR) DSS Symbol ID = 1 mA, VGS = 0 V Test Condition 20 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = – 10 V 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = 20 V, VGS = 0 V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 10 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 1.0 A (Note2) 2.6 5.2 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note2) ⎯ 90 126 ID = 1.0 A, VGS = 2.5 V (Note2) ⎯ 115 164 ID = 0.5 A, VGS = 1.8 V (Note2) ⎯ 150 214 ID = 0.3 A, VGS = 1.5 V (Note2) 307 RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 185 ⎯ 195 ⎯ ⎯ 35 ⎯ Crss ⎯ 29 ⎯ Total Gate Charge Qg ⎯ 3.4 ⎯ Gate−Source Charge Qgs ⎯ 2.3 ⎯ Gate−Drain Charge Qgd ⎯ 1.1 ⎯ Switching time VDS = 10 V, ID= 2.0 A, VGS = 4 V Turn-on time ton VDD = 10 V, ID = 0.5 A, ⎯ 8.0 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 9.0 ⎯ ⎯ – 0.85 – 1.2 Drain–source forward voltage VDSF ID = − 2.0 A, VGS = 0 V (Note2) mΩ pF nC ns V Note 2: Pulse test Start of commercial production 2007-10 1 2014-03-01 SSM6K204FE Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 0V RG 0 10 μs (c) VOUT VDD VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking 6 90% IN 10% VDD VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KN 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM6K204FE ID – VDS 10 V 4.0 V ID – VGS 10 Common Source Ta = 25 °C 2.5 V (A) 1.8 V 3 ID 2 Drain current Drain current ID (A) 4 1.5 V 1 0 0.2 0.4 0.6 Drain–source voltage VDS 0.1 Ta = 100 °C − 25 °C (V) 1.0 2.0 Gate–source voltage RDS (ON) – VGS VGS (V) RDS (ON) – ID 500 500 Common Source ID =1.0A Ta = 25°C Common Source 400 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) 25 °C 0.01 0.0001 0 1 0.8 1 0.001 VGS = 1.2 V 0 Common Source VDS = 3 V Ta = 25°C 300 200 25 °C Ta = 100 °C 100 400 300 1.5 V 200 1.8 V 2.5 V 100 VGS = 4.0 V − 25 °C 0 0 2 6 4 Gate–source voltage 8 VGS 0 10 0 (V) 1 Drain current RDS (ON) – Ta (A) Vth – Ta Common Source 300 Vth (V) Common Source 0.3 A / 1.5 V 200 Gate threshold voltage Drain–source ON-resistance RDS (ON) (mΩ) ID 4 1.0 400 0.5 A / 1.8 V 1.0 A / 2.5 V 100 0 −50 3 2 ID = 1.0 A / VGS = 4.0 V 0 50 Ambient temperature 100 Ta VDS = 3V ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2014-03-01 IDR – VDS |Yfs| – ID 10 10 VDS = 3 V VGS = 0 V (A) Common Source Common Source Ta = 25°C IDR 3 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (S) SSM6K204FE 1 0.3 D 1 IDR G S 0.1 Ta =100 °C 25 °C 0.01 −25 °C 0.1 0.01 1 0.1 Drain current ID 0.001 0 10 (A) –0.4 –0.6 Drain–source voltage C – VDS 1000 –0.2 –0.8 VDS (ns) t (pF) Switching time C Capacitance 100 50 Common Source 30 Coss Crss Ta = 25°C f = 1 MHz VGS = 0 V 10 0.1 1 10 Drain–source voltage toff 100 tf 10 ton tr 1 0.01 100 VDS (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7Ω 500 Ciss –1.2 t – ID 1000 300 –1.0 (V) 0.1 Drain current 1 ID 10 (A) Dynamic Input Characteristic 10 ID = 2.0 A 8 Ta = 25°C Gate–Source voltage VGS (V) Common Source 6 VDD=10V VDD=16V 4 2 0 0 2 4 Total Gate Charge 6 8 Qg 10 (nC) 4 2014-03-01 SSM6K204FE rth – tw PD – Ta Single Pulse Drain power dissipation PD (mW) Transient thermal impedance rth (°C/W) 100 Mounted on FR4 board 2 (25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 800 600 400 200 0 -40 1000 (s) Mounted on FR4 board (25.4mm × 25.4mm × 1.6t , 2 Cu Pad : 645 mm ) -20 0 20 40 60 80 Ambient temperature 5 100 120 140 160 Ta (°C) 2014-03-01 SSM6K204FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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