SSM6K211FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
•
1.5-V drive
•
Low ON-resistance:
Unit: mm
Ron = 118 mΩ (max) (@VGS = 1.5 V)
Ron =
82 mΩ (max) (@VGS = 1.8 V)
Ron =
59 mΩ (max) (@VGS = 2.5 V)
Ron =
47 mΩ (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
± 10
V
DC
ID
3.2
Pulse
IDP
6.4
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Drain current
Drain power dissipation
A
1,2, 5, 6: Drain
ES6
JEDEC
3:
Gate
4:
Source
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-2N1J
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 3 mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
NQ
1
2
Start of commercial production
2008-10
1
2014-03-01
SSM6K211FE
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = –10 V
12
⎯
⎯
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
Drain-source breakdown voltage
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
⎯
±1
μA
⎯
1.0
V
(Note 2)
5.5
11.0
⎯
S
ID = 2.0 A, VGS = 4.5 V
(Note 2)
⎯
36
47
ID = 2.0 A, VGS = 2.5 V
(Note 2)
⎯
44
59
ID = 1.0 A, VGS = 1.8 V
(Note 2)
⎯
55
82
ID = 0.5 A, VGS = 1.5 V
(Note 2)
VDS = 3 V, ID = 1 mA
⏐Yfs⏐
VDS = 3 V, ID = 2.0 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Switching time
⎯
0.35
Vth
RDS (ON)
Total Gate Charge
VGS = ±10 V, VDS = 0 V
Turn-on time
ton
Turn-off time
toff
VDSF
Drain-source forward voltage
V
VDS = 10 V, ID = 3.2 A, VGS = 4.5 V
VDD = 10 V, ID = 1.0 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = –3.2 A, VGS = 0 V
(Note 2)
mΩ
⎯
66
118
⎯
510
⎯
⎯
98
⎯
⎯
85
⎯
⎯
10.8
⎯
⎯
8.6
⎯
⎯
2.2
⎯
⎯
16
⎯
⎯
40
⎯
⎯
–0.84
–1.2
pF
nC
ns
V
Note 2: Pulse test
Switching Time Test Circuit
(a) Test Circuit
2.5 V
OUT
10 μs
RG
IN
0
(b) VIN
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
2.5 V
0V
90%
10%
VDD
90%
(c) VOUT
VDD
10%
VDS (ON)
tr
ton
tf
toff
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the
SSM6K211FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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2014-03-01
SSM6K211FE
ID – VGS
ID – VDS
7
10 V
4.5 V 2.5 V
10
1.8 V
Common Source
6
VDS = 3 V
ID
4
1
0.1
Drain current
ID
5
Drain current
(A)
(A)
1.5 V
3
VGS = 1.2 V
2
Ta = 100 °C
0.01
25 °C
0.001
− 25 °C
1
0
Common Source
Ta = 25 °C
0
0.4
0.2
0.6
0.8
Drain-source voltage
VDS
0.0001
0
1.0
1.0
VGS
(V)
RDS (ON) – ID
RDS (ON) – VGS
200
200
ID =2.0A
Common Source
Common Source
Ta = 25°C
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain-source ON-resistance
RDS (ON) (mΩ)
2.0
Gate-source voltage
(V)
100
25 °C
Ta = 100 °C
100
1.5V
1.8 V
2.5 V
VGS = 4.5 V
− 25 °C
0
0
4
2
Gate-source voltage
VGS
0
8
6
0
(V)
4
2
Drain current
RDS (ON) – Ta
ID
Vth – Ta
1.0
120
Common Source
Common Source
Vth (V)
1.0 A / 1.8 V
2.0 A / 2.5 V
60
40
ID = 2.0 A / VGS = 4.5 V
20
0
−50
0
ID = 1 mA
0.8
0.6
Gate threshold voltage
Drain-source ON-resistance
RDS (ON) (mΩ)
VDS = 3 V
0.5 A / 1.5 V
100
80
6
(A)
50
Ambient temperature
100
Ta
0.4
0.2
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2014-03-01
SSM6K211FE
(S)
10
IDR – VDS
10
Common Source
(A)
VDS = 3 V
Common Source
VGS = 0 V
D
Ta = 25 °C
IDR
1
IDR
Ta = 25 °C
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
|Yfs| – ID
30
1
0.3
0.1
0.03
G
0.1
0.01
100 °C
0.001
25 °C
0.01
0.001
ID
0.0001
0
10
1
0.1
0.01
Drain current
-0.2
(A)
-0.4
−25 °C
-0.6
Drain-source voltage
C – VDS
1000
-0.8
-1.0
VDS
(V)
-1.2
t – ID
1000
Ciss
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
(ns)
toff
300
100
tf
Switching time
Capacitance
C
t
(pF)
S
100
Coss
Crss
30
10
0.1
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
ton
10
tr
1
10
Drain-source voltage
1
100
VDS
0.01
0.1
Drain current
(V)
1
ID
10
(A)
Dynamic Input Characteristic
10
Common Source
Ta = 25°C
VGS
(V)
ID = 3.2 A
8
Gate-Source voltage
6
VDD=10 V
4
VDD=16 V
2
0
0
5
10
15
Total Gate Charge
20
Qg
25
(nC)
4
2014-03-01
SSM6K211FE
rth – tw
PD – Ta
(°C/W )
1000
1000
Single pulse
Drain power dissipation PD (mW)
Mounted on FR4 board
Transient thermal impedance
rth
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm,
Cu Pad: 645 mm )
600
400
200
0
-40
1000
2
800
-20
0
20
40
60
80
Ambient temperature
(s)
5
100 120 140 160
Ta
(°C)
2014-03-01
SSM6K211FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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