SSM6K211FE

SSM6K211FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ) SSM6K211FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • 1.5-V drive Low ON-resistance: Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = Ron = Ron = 82 mΩ (max) (@VGS = 1.8 V) 59 mΩ (max) (@VGS = 2.5 V) 47 mΩ (max) (@VGS = 4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 10 3.2 6.4 500 150 −55 to 150 Unit V V A 1,2, 5, 6: Drain mW °C °C 3: Gate Source ES6 JEDEC 4: ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-2N1J temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 3 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NQ 1 2 3 1 2 3 1 2008-11-21 SSM6K211FE Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ Test Condition ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = –10 V VDS = 20 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 2.0 A ID = 2.0 A, VGS = 4.5 V Drain-source ON-resistance RDS (ON) ID = 2.0 A, VGS = 2.5 V ID = 1.0 A, VGS = 1.8 V ID = 0.5 A, VGS = 1.5 V Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDS = 10 V, ID = 3.2 A VGS = 4.5 V VDD = 10 V, ID = 1.0 A, VGS = 0 to 2.5 V, RG = 4.7 Ω ID = –3.2 A, VGS = 0 V (Note 2) VDS = 10 V, VGS = 0 V, f = 1 MHz (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Min 20 12 ⎯ ⎯ 0.35 5.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 11.0 36 44 55 66 510 98 85 10.8 8.6 2.2 16 40 –0.84 Max ⎯ ⎯ 1 ±1 1.0 ⎯ 47 59 82 118 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ –1.2 ns V nC pF mΩ Unit V μA μA V S Drain-source forward voltage Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit 2.5 V 0 10 μs OUT VDD = 10 V RG = 4.7 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C (b) VIN 2.5 V 10% 90% IN RG 0V VDD (c) VOUT VDS (ON) ton tr 90% 10% tf toff VDD Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6K211FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-11-21 SSM6K211FE ID – VDS 7 6 10 V 4.5 V 2.5 V 1.8 V 1.5 V 10 Common Source VDS = 3 V ID – VGS (A) (A) ID Drain current 5 4 3 VGS = 1.2 V 2 1 ID Drain current 0.1 Ta = 100 °C 0.01 25 °C 0.001 − 25 °C 1 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 0.8 1.0 0.0001 0 1.0 2.0 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) – VGS 200 ID =2.0A Common Source 200 RDS (ON) – ID Common Source Ta = 25°C Drain-source ON-resistance RDS (ON) (mΩ) 100 Drain-source ON-resistance RDS (ON) (mΩ) 100 1.5V 1.8 V 2.5 V VGS = 4.5 V 25 °C Ta = 100 °C − 25 °C 0 0 2 4 6 8 0 0 2 4 6 Gate-source voltage VGS (V) Drain current ID (A) RDS (ON) – Ta 120 Common Source 1.0 Vth – Ta Common Source 0.5 A / 1.5 V VDS = 3 V ID = 1 m A Vth (V) Gate threshold voltage 150 100 Drain-source ON-resistance RDS (ON) (mΩ) 1.0 A / 1.8 V 0.8 80 2.0 A / 2.5 V 0.6 60 0.4 40 ID = 2.0 A / VGS = 4.5 V 20 0.2 0 −50 0 50 100 0 −50 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2008-11-21 SSM6K211FE |Yfs| – ID (S) 30 Common Source 10 3 1 10 Common Source VGS = 0 V D Ta = 25 °C IDR G 0.1 IDR – VDS ⎪Yfs⎪ (A) IDR VDS = 3 V Ta = 25 °C 1 S Forward transfer admittance 0.3 0.1 Drain reverse current 0.01 100 °C 0.001 25 °C 0.0001 0 −25 °C 0.03 0.01 0.001 0.01 0.1 1 10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Drain current ID (A) Drain-source voltage VDS (V) 1000 C – VDS 1000 Ciss t – ID Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff (pF) 300 (ns) 100 tf C Capacitance 100 Coss Crss 30 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V 1 10 100 Switching time t ton 10 tr 10 0.1 1 0.01 0.1 1 10 Drain-source voltage VDS (V) Drain current ID (A) Dynamic Input Characteristic 10 Common Source ID = 3.2 A (V) 8 Ta = 25°C VGS 6 Gate-Source voltage VDD=10 V 4 VDD=16 V 2 0 0 5 10 15 20 25 Total Gate Charge Qg (nC) 4 2008-11-21 SSM6K211FE rth – tw 1000 1000 Single pulse PD – Ta Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, 800 Cu Pad: 645 mm ) 2 (°C/W ) (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Transient thermal impedance 100 Drain power dissipation PD (mW) Mounted on FR4 board rth 600 400 10 200 1 0.001 0.01 0.1 1 10 100 1000 0 -40 -20 0 20 40 60 80 100 120 140 160 Pulse width tw (s) Ambient temperature Ta (°C) 5 2008-11-21 SSM6K211FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2008-11-21