SSM6K25FE

SSM6K25FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K25FE High Speed Switching Applications • • Optimum for high-density mounting in small packages Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Ron = 145mΩ (max) (@VGS = 4.0 V) 1 2 3 6 5 4 0.12±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Rating 20 ± 12 0.5 1.5 500 150 −55~150 Unit V V A mW °C °C Tch Tstg ES6 Note: JEDEC ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2N1A reliability significantly even if the operating conditions (i.e. Weight: 3.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NH 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 0.55±0.05 1,2,5,6 :Drain 3 :Gate 4 :Source 0.5 1 2007-11-01 SSM6K25FE Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±12V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = −12 V VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 0.25 A ID = 0.25 A, VGS = 4.0 V Drain-Source on-resistance RDS (ON) ID = 0.25 A, VGS = 2.5 V ID = 0.25 A, VGS = 1.8 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.25 A, VGS = 0~2.5 V, RG = 4.7 Ω (Note2) (Note2) (Note2) (Note2) Min ⎯ 20 10 ⎯ 0.5 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.4 125 150 200 268 34 44 11 15 Max ±1 ⎯ ⎯ 1 1.1 ⎯ 145 190 395 ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF ns mΩ Unit μA V μA V S Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN OUT IN 0V RG 10 μs VDD = 10 V RG = 4.7 Ω D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25°C 10% 2.5 V 90% 2.5 V 0 VDD (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device. 2 2007-11-01 SSM6K25FE ID - VDS 1600 1400 Drain current ID (mA) 1200 1000 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1 Drain-Source voltage VDS (V) ID - VGS 10000 1.6 Drain current ID (mA) 1000 100 Ta=100°C 10 1 0.1 0.01 0 1 2 Gate-Source voltage VGS (V) 3 25°C -25°C Common Source VDS=3V 1.8 2.0 3.0 4.0 5.0 VGS=1.4V Common Source Ta=25°C R DS(ON) - ID 200 180 Drain-Source on resistance RDS(ON) (mΩ) 160 140 120 100 80 60 40 20 0 0 200 RDS(ON) - VGS 400 350 Drain-Source on resistance RDS(ON) (mΩ) 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate-Source voltage VGS (V) 10 1.8V Common Source ID=250mA 2.5V VGS=4V 25°C Ta=100°C -25°C Common Source Ta=25°C 400 600 800 1000 1200 1400 1600 Drain current ID (mA) 400 350 Drain-Source on resistance RDS(ON) (mΩ) 300 250 200 150 100 50 RDS(ON) - Ta Common Source ID=250mA Gate threshold voltage Vth(V) 1 Vth - Ta Common Source ID=0.1mA VDS=3V 0.8 1.8V 2.5V VGS=4V 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 3 2007-11-01 SSM6K25FE 10 |Yfs| - ID 1600 Drain reverse current IDR (mA) 1400 1200 1000 800 S IDR - VDS Common Source VGS=0V Ta=25°C D Forward transfer admittance |Yfs| (S) 25°C -25°C 1 Ta=100°C G IDR 600 400 200 0 Common Source VDS=3V Ta=25°C 0 10 100 1000 10000 Drain current ID (mA) 0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V) -1 1000 C - VDS 1000 t - ID Common Source VDD=10V VGS=0~2.5V Ta=25°C Capacitance C (pF) Switching time t (ns) Ciss toff 100 100 tf ton tr Common Source VGS=0V f=1MHz Ta=25°C 10 0.1 Coss Crss 10 1 1 10 Drain-Source voltage VDS (V) 100 10 100 1000 Drain current ID (mA) 10000 1000 PD - Ta mounted FR4 board (25.4mm*25.4mm*1.6t Cu Pad :645mm2) Drain power dissipation PD(mW) 800 600 DC 400 200 0 0 20 40 60 80 100 120 Ambient temperature Ta(℃) 140 160 4 2007-11-01 SSM6K25FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01