SSM6K32TU

SSM6K32TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K32TU ○ Relay drive, DC/DC converter application 4Vdrive Low on resistance: Ron = 440mΩ (max) (@VGS = 4 V) Ron = 300mΩ (max) (@VGS = 10 V) Unit: mm Absolute Maximum Ratings (Ta = 25℃) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ±20 2 6 500 150 −55~150 Unit V V A mW °C °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2T1D Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25℃) Characteristics Gate leakage current Drain cut-off current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDSF ID = -2A, VGS = 0V VDD≒48V, VGS = 10V ID = 2 A VDD ≒ 30 V, ID = 1 A VGS = 0~10 V, RG = 50 Ω Test Condition VGS = ±16V, VDS = 0V VDS = 60V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, lD = 1mA VGS = 4V, ID = 1A VGS = 10V, ID = 1A VDS = 10V, ID = 1A VDS = 10V, VGS = 0V f = 1MHz Min ― ― 60 0.8 ― ― 1.0 ― ― ― ― ― ― ― ― ― ― ― Typ. ― ― ― ― 0.33 0.23 2.0 140 20 65 140 210 470 1600 5.0 3.6 1.4 ― Max ±10 100 ― 2.0 0.44 0.30 ― ― ― ― ― ― ― ― ― ― ― −1.5 V nC ns pF Unit μA μA V V Ω S Gate−source charge Gate−drain charge Drain-Source forward voltage 1 2007-11-01 SSM6K32TU Switching Time Test Circuit (a) Test Circuit 10V 0 10 μs OUT VDD ≒30 V RG = 50 Ω Duty < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25°C (b) ) VIN 10 V 10% 90% IN RG 0V VDD (c) VOUT VDS (ON) ton tr 90% 10% tf toff VDD Marking 6 5 4 Equivalent Circuit (Top View) 6 5 4 KNB 1 2 3 1 2 3 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6K32TU 3 2007-11-01 SSM6K32TU 4 2007-11-01 SSM6K32TU rth – tw rth (°C /W) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area 10 ID max (Pulsed) 3 10 ms* 1 ID max (Continuous) 0.3 10s* DC operation Ta = 25°C 0.1 Mounted on FR4 board 0.03 (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 645 mm ) 1 ms* 1.2 PD – Ta (W) Mounted on FR4 board 1 t = 10 s 0.8 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) (A) Drain power dissipation ID PD 0.6 Drain current DC 0.4 0.2 0.01 Single non--repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.3 1 3 10 30 100 0 0 50 100 150 0.003 Ambient temperature Ta (°C) 0.001 0.1 Drain-Source voltage VDS (V) 5 2007-11-01 SSM6K32TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01