SSM6L13TU(T5L,F,T)

SSM6L13TU TOSHIBA Field-Effect Transistor Silicon P / N Channel MOS Type SSM6L13TU Power Management Switch Applications High-Speed Switching Applications Drain-source voltage Rating Unit VDS 20 V V VGSS ±12 DC ID 0.8 Pulse IDP 1.6 Gate-source voltage Drain current Symbol 3 4 1.Source1 2.Gate1 UF6 3.Drain2 Symbol Rating Drain-source voltage VDS −20 V Gate-source voltage VGSS ±8 V DC ID −0.8 Pulse IDP −1.6 Drain current 5 A Q2 Absolute Maximum Ratings (Ta = 25 °C) Characteristic 2 +0.06 0.16-0.05 Characteristic 6 0.7±0.05 Q1 Absolute Maximum Ratings (Ta = 25 °C) 1 +0.1 0.3-0.05 1.7±0.1 RDS(ON) = 235 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 178 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 460 mΩ (max) (@VGS = −1.8 V) RDS(ON) = 306 mΩ (max) (@VGS = −2.5 V) 0.65 0.65 : Pch 2.1±0.1 1.3±0.1 1.8-V drive N–ch , P–ch 2–in–1 Low ON–resistance: Nch 2.0±0.1 • • • • • • Unit: mm Unit A 4.Source2 5.Gate2 6.Drain1 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7 mg (typ.) Absolute Maximum Ratings (Q1 , Q2 Common) (Ta = 25 °C) Characteristic Power dissipation Symbol Rating Unit PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 Q1 KV 1 5 Q2 3 1 2 1 3 Start of commercial production 2005-10 2014-03-01 SSM6L13TU Q1 Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = − 12 V 10 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 0.6 A (Note 2) 2.3 3.75 ⎯ S ID = 0.6 A, VGS = 4.0 V (Note 2) ⎯ 116 143 ID = 0.4 A, VGS = 2.5 V (Note 2) ⎯ 134 178 ID = 0.2 A, VGS = 1.8 V (Note 2) ⎯ 160 235 Gate threshold voltage Forward transfer admittance Drain-source ON-resistance RDS (ON) mΩ Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 268 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 34 ⎯ pF Switching time Turn-on time ton VDD = 10 V, ID = 0.25 A, ⎯ 9 ⎯ Turn-off time toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 16 ⎯ ⎯ − 0.8 − 1.15 V Min Typ. Max Unit Drain-source forward voltage VDSF ID = − 0.8 A, VGS = 0 V (Note 2) ns Note 2 : Pulse test Q2 Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Symbol Test Conditions V (BR) DSS ID = − 1 mA, VGS = 0 − 20 ⎯ ⎯ V (BR) DSX ID = − 1 mA, VGS = + 8 V − 12 ⎯ ⎯ V Drain cutoff current IDSS VDS = − 20 V, VGS = 0 ⎯ ⎯ − 10 μA Gate leakage current IGSS VGS = ± 8 V, VDS = 0 ⎯ ⎯ ±1 μA − 0.3 ⎯ − 1.0 V S Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Vth VDS = − 3 V, ID = − 1 mA ⏐Yfs⏐ VDS = − 3 V, ID = − 0.6 A (Note 2) 1.5 2.5 ⎯ ID = − 0.6 A, VGS = − 4.0 V (Note 2) ⎯ 175 234 ID = − 0.4 A, VGS = − 2.5 V (Note 2) ⎯ 230 306 ID = − 0.1 A, VGS = − 1.8 V (Note 2) ⎯ 300 460 RDS (ON) mΩ Input capacitance Ciss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 250 ⎯ pF Output capacitance Coss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Reverse transfer capacitance Crss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 35 ⎯ pF Switching time Turn-on time ton VDD = − 10 V, ID = − 0.25 A, ⎯ 12 ⎯ Turn-off time toff VGS = 0 to − 2.5 V, RG = 4.7 Ω ⎯ 18 ⎯ ⎯ 0.85 1.2 Drain-source forward voltage VDSF ID = 0.8 A, VGS = 0 V (Note 2) ns V Note 2: Pulse test 2 2014-03-01 SSM6L13TU Q1 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90 % IN 10 % 0V RG 0 10 μs VDD VDD (c) VOUT VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25 °C 90 % 10 % VDS (ON) tf tr ton toff Q2 Switching Time Test Circuit (a) Test Circuit 0 OUT (b) VIN 0V 90 % IN RG − 2.5 V 10 μs VDD 10 % −2.5 V RL (c) VOUT VDD = - 10 V RG = 4.7 Ω Duty ≤ 1 % VIN: tr, tf < 5 ns Common Source Ta = 25 °C VDS (ON) 90 % 10 % VDD tr ton tf toff Q1 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Q2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= − 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 3 2014-03-01 SSM6L13TU Q1 Data ID - VDS 2 10 4 2.5 1.8 1 Drain current ID (A) ドレイン電流 ID (A) Drain current I (A) ドレイン電流 IDD (A) ID - VGS 10 1.5 1 VGS=1.2V Ta=85°C 0.1 25°C 0.01 -25°C 0.001 Common Source Ta = 25ソース接地 °C ソース接地 VDS=3V Ta=25℃ Pulse test Pulse test 0 0.0001 0 0.2 0.4 0.6 0.8 1 0 Drain–source voltage VDS ドレイン・ソース間電圧 VDS (V) (V) RDS(ON) - VGS Drain–source ON-resistance Pulse test 0.6A 0.4A ID=0.2A 100 RDS(ON) - Ta Pulse test 250 200 1.8V,0.2A 2.5V,0.4A 150 100 0 VGS=4V,ID=0.6A 50 0 0 1 2 3 4 5 6 7 8 9 -60 -40 -20 0 10 RDS(ON) - ID ゲートしきい値電圧　Vth(V) Gate threshold voltage 200 1.8V 2.5V VGS=4V 100 Common Source Ta =ソース接地 25 °C Pulse test Ta=25℃ 0 0 Vth - Ta 1 Vth (V) 300 1 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 周囲温度　Ta(℃) Gate–source voltage VVGS (V) ゲート・ソース間電圧 GS (V) Drain–source ON-resistance 2 Common Source ソース接地 RDS (ON) (mΩ) ドレイン・ソース間オン抵抗 RDS(ON)　(mΩ) ドレイン・ソース間オン抵抗 Drain–source ON-resistance RDS (ON) (mΩ) RDS(ON) (mΩ) ソース接地 Common Source Ta=25°C Ta = 25 °C 200 1 Gate–source voltage VGS VGS (V) (V) ゲート・ソース間電圧 300 300 ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON) (mΩ) Common Source VDS = 3 V Common Source ソース接地 VDS =3V ID=1mA ID = 1 mA VDS=3V 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 2 Drain current I (A) ドレイン電流 DID (A) 20 40 60 80 100 120 140 160 Ambient temperature Ta 周囲温度　Ta(℃) 4 (°C) 2014-03-01 SSM6L13TU Q1 Data |Yfs| - ID ソース接地 25°C -25°C Ta=85°C 1.0 VGS= 0V TaVGS=0V = 25 °C ドレイン逆電流 Drain reverse current IDR IDR(A)(A) 順方向伝達アドミタンス |Yfs| (S) Forward transfer admittance ⎪Yfs⎪ Common Source Common Source ソース接地 VDS = 3 V IDVDS=3V = 1 mA Ta=25℃ Pulse test 1 D G IDR 0.1 25°C Ta=85°C -25°C S 0.01 Ta=25℃ Pulse test 0.1 0.001 0.01 0.1 1 Drain current ID (A) ドレイン電流 ID (A) 10 0 C - VDS Ciss 100 Coss Common Source ソース接地 Crss Ta =VGS=0V 25 °C f = 1f=1MHz MHz VGS = 0 V Ta=25℃ 10 0.1 1 -0.2 -0.4 -0.6 -0.8 ドレイン・ソース間電圧 VDS (V) (V) Drain–source voltage VDS 10 toff Drain-source voltage VDSVDS(V) ドレイン・ソース間電圧 (V) 5 Common Source ソース接地 VDD = 10 V VDD=10V VGS = 0 to 2.5 V VGS=0～2.5V Ta = 25 °C Ta=25℃ 100 tf 10 ton tr 1 0.01 100 -1 t - ID 1000 Switching time tt (ns) (ns) スイッチング時間 1000 Capacitance C (pF) 静電容量 C (pF) IDR - VDS 10 (S) 10.0 0.1 1 ドレイン電流 Drain current IID (A) D (A) 10 2014-03-01 SSM6L13TU Q2 Data ID - VDS -2 -10 -4.0 ID - VGS -10 -2.5 Drain current ID (A) ドレイン電流 ID (A) Drain current ID ID (A)(A) ドレイン電流 -1 -1.8 -1 -1.5 Ta=85°C -0.1 25°C -0.01 -25°C -0.001 Common Source ソース接地 VDS = -3 V Common Source VGS=-1.2V ソース接地 Ta = 25 °C Ta=25℃ VDS=-3V Pulse test -00 0 -0.0 -0.2 -0.4 -0.6 -0.8 0 -0 -1.0 Drain–source voltage VVDS (V) ドレイン・ソース間電圧 DS (V) RDS(ON) - VGS Pulse test Drain–source ON-resistance ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON)　(m Ω) Drain–source ON-resistance ドレイン・ソース間オン抵抗 R (mΩ) DS (ON) (mΩ) RDS(ON) Common Source ソース接地 Pulse test -0.4A 300 200 ID=-0.1A 100 400 -2.5V,-0.4A 200 VGS=-4V,ID=-0.6A 100 0 -0 0 -1 -60 -40 -20 0 -2 -3 -4 -5 -6 -7 -8 -9 -10 ゲート・ソース間電圧 (V) Gate–source voltage VVGS GS (V) 350 Gate threshold voltage Vth (V) ゲートしきい値電圧　Vth(V) 300 -2.5V 200 VGS=-4V 150 100 Common Source Taソース接地 = 25°C 50 0 -0 Common Source ソース接地 VDS = -3 V ID=-1mA ID = -1 mA -0.8 VDS=-3V -0.6 -0.4 -0.2 -0 0 Pulse test Ta=25℃ 0 -60 -40 -20 0 -1 Drain current ID (A) ドレイン電流 ID (A) (°C) Vth - Ta -1 -1.8V 250 20 40 60 80 100 120 140 160 周囲温度　Ta(℃) Ambient temperature Ta RDS(ON) - ID 400 Drain–source ON-resistance -1.8V,-0.1A 300 0 ドレイン・ソース間オン抵抗 RDS (ON) (mΩ) RDS(ON) (mΩ) -2 RDS(ON) - Ta Common Source ソース接地 Ta = 25 °C Ta=25°C -0.6A -1 Gate–source voltage VGSVGS(V) ゲート・ソース間電圧 (V) 500 500 400 Pulse test -0.0001 -2 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 周囲温度　Ta(℃) 6 2014-03-01 SSM6L13TU Q2 Data |Yfs| - ID IDR - VDS 10 Common Source Vソース接地 GS=0V (A) TaVGS=0V = 25°C ドレイン逆電流 IDRDR (A) ⎪Yfs⎪ Ta=25℃ Pulse test 1 Drain reverse current I 25°C Forward transfer admittance |Yfs| (S) 順方向伝達アドミタンス (S) 10.0 -25°C Ta=85°C 1.0 Common Source ソース接地 VDS = -3 V VDS=-3V Ta = 25°C 25°C -25°C 0.1 Ta=85°C 0.01 Ta=25℃ Pulse test 0.1 0.001 -0.01 -0.1 -1 -10 0 0.2 0.4 0.6 0.8 Drain–source voltage VDS ドレイン・ソース間電圧 VDS(V) (V) Drain current IID (A) D (A) ドレイン電流 C - VDS Ciss 100 Coss Common Source ソース接地 Crss Ta = 25 °C VGS=0V f = 1 MHz f=1MHz VGS = 0 V 10 -0.1 -10 toff tf 10 ton tr 1 -0.01 -100 -0.1 * Transient 過渡熱抵抗 thermal impedance rth (°Cr/W) th (°C/W ) Ppower許容損失 dissipation PD(mW) PD (mW) 1000 (1): Mounted on FR4 board 800 ①FR4基板実装時 (25.4mm × 25.4mm × 1.6mm) Cu Pad : 645 mm2) (25.4mm×25.4mm×1.6t) (2): Mounted on ceramic board × 25.4mm × 0.8mm) Cu(25.4mm Pad :645mm2 ②ｾﾗﾐｯｸ基板実装時 Cu Pad : 645 mm2) (25.4mm×25.4mm×0.8t) Cu Pad :645mm 2 600 ① 400 200 0 0 20 40 60 80 100 120 140 160 Ambient temperature 周囲温度 Ta(℃)Ta -10 rth - tw PD - Ta ② -1 ドレイン電流 (A) Drain current IDID (A) Drain-source voltage VDSVDS(V)(V) ドレイン・ソース間電圧 1000 Common Source ソース接地 VDD = -10 V VGSVDD=-10V = 0 to -2.5 V Ta =VGS=0～-2.5V 25 °C RG Ta=25℃ = 4.7Ω 100 Ta=25℃ -1 t - ID 1000 Switching time t (ns) スイッチング時間 t (ns) 静電容量 C (pF) Capacitance C (pF) 1000 1 c b 100 a Single pulse a : Mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b : Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c : Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 10 1 0.001 0.01 0.1 Pulse width (°C) 7 10 1 tw 100 1000 (s) 2014-03-01 SSM6L13TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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