SSM6L16FE
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type(π-MOSVI)
SSM6L16FE
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
Small package
•
Low on-resistance
Q1: RDS(ON) = 4 Ω (max) (@VGS = 2.5 V)
Q2: RDS(ON) = 12 Ω (max) (@VGS = −2.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
100
Pulse
IDP
200
Drain current
mA
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
-100
Pulse
IDP
-200
Drain current
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3 mg (typ.)
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Power dissipation
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
0.45 mm
0.3 mm
Start of commercial production
2002-03
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2014-03-01
SSM6L16FE
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
K6
1
5
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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SSM6L16FE
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
MAX.
UNIT
⎯
⎯
±1
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0
20
⎯
⎯
V
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
μA
Gate threshold voltage
Forward transfer admittance
Vth
VDS = 3 V, ID = 0.1 mA
0.6
⎯
1.1
V
⎪Yfs⎪
VDS = 3 V, ID = 10 mA
(Note2)
40
⎯
⎯
mS
ID = 10 mA, VGS = 4 V
(Note2)
⎯
1.5
3.0
ID = 10 mA, VGS = 2.5 V
(Note2)
⎯
2.2
4.0
ID = 1 mA, VGS = 1.5 V
(Note2)
⎯
5.2
15
⎯
9.3
⎯
pF
⎯
4.5
⎯
pF
⎯
9.8
⎯
pF
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
TYP.
VGS = ±10 V, VDS = 0
Drain cut-off current
Drain-Source on-resistance
MIN.
IGSS
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Turn-on time
Turn-off time
VDS = 3 V, VGS = 0, f = 1 MHz
ton
VDD = 3 V, ID = 10 mA,
⎯
70
⎯
toff
VGS = 0 to 2.5 V
⎯
125
⎯
Ω
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
2.5 V
OUT
IN
50 Ω
0
10 μs
VDD = 3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
(b) VIN
RL
VDD
2.5 V
0V
(c) VOUT
90%
10%
VDD
90%
10%
VDS (ON)
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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SSM6L16FE
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
MAX.
UNIT
⎯
⎯
±1
μA
V (BR) DSS
ID = −0.1 mA, VGS = 0
−20
⎯
⎯
V
IDSS
VDS = −20 V, VGS = 0
⎯
⎯
−1
μA
Gate threshold voltage
Forward transfer admittance
Vth
VDS = −3 V, ID = −0.1 mA
−0.6
⎯
−1.1
V
⎪Yfs⎪
VDS = −3 V, ID = −10 mA
(Note3)
25
⎯
⎯
mS
ID = −10 mA, VGS = −4 V
(Note3)
⎯
6
8
ID = −10 mA, VGS = −2.5 V (Note3)
⎯
8
12
ID = −1 mA, VGS = −1.5 V
⎯
18
45
⎯
11
⎯
pF
⎯
3.7
⎯
pF
⎯
10
⎯
pF
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
TYP.
VGS = ±10 V, VDS = 0
Drain cut-off current
Drain-Source on-resistance
MIN.
IGSS
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Turn-on time
Turn-off time
(Note3)
VDS = −3 V, VGS = 0, f = 1 MHz
ton
VDD = −3 V, ID = − 10 mA,
⎯
130
⎯
toff
VGS = 0 to −2.5 V
⎯
190
⎯
Ω
ns
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
90%
IN
50 Ω
−2.5V
10 μs
VDD
10%
−2.5 V
RL
(c) VOUT
VDD = −3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between the gate and source when the low operating current value is ID =
- 0.1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off)
requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Be sure to take this into consideration when using the device.
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SSM6L16FE
Q1 (N-ch MOSFET)
ID – VDS
ID – VGS
250
(mA)
2.3
2.1
ID
1.9
150
Drain current
Drain current ID
4 3
10
(mA)
Common source
Ta = 25°C
Pulse test
2.5
200
1000
1.7
100
1.5
50
100
Common source
VDS = 3 V
Pulse test
Ta = 100°C
10
25°C
−25°C
1
0.1
VGS = 1.3 V
0
0
0.5
1
1.5
Drain-Source voltage
0.01
0
2
1
VDS (V)
Gate-Source voltage
RDS (ON) – ID
12
2
VGS (V)
RDS (ON) – VGS
6
Common source
Common source
Ta = 25°C
8
VGS = 1.5 V
6
ID = 10 mA
5
Pulse test
Drain-Source on-resistance
RDS (ON) (Ω)
Drain-Source on-resistance
RDS (ON) (Ω)
10
4
2.5 V
2
Pulse test
4
3
Ta = 100°C
2
25°C
1
−25°C
4V
0
1
10
100
0
0
1000
2
4
RDS (ON) – Ta
2.0
Common source
1.8
Vth (V)
Pulse test
VGS = 1.5 V, ID = 1 mA
Gate threshold voltage
Drain-Source on-resistance
RDS (ON) (Ω)
8
10
VGS (V)
Vth – Ta
8
4
2.5 V, 10 mA
2
6
Gate-Source voltage
Drain current ID (mA)
6
3
4 V, 10 mA
1.6
Common source
ID = 0.1 mA
VDS = 3 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−25
0
25
50
75
100
125
0
−25
150
Ambient temperature Ta (°C)
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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SSM6L16FE
Q1 (N-ch MOSFET)
⎪Yfs⎪ – ID
IDR – VDS
500
Common source
VDS = 3 V
Drain reverse current IDR (mA)
Forward transfer admittance
⎪Yfs⎪ (mS)
300
250
Ta = 25°C
100 Pulse test
30
10
3
1
1
10
100
200
Pulse test
D
150
IDR
G
S
100
50
0
0
1000
Common source
VGS = 0 V
Ta = 25°C
−0.2
Drain current ID (mA)
−0.4
−0.6
−0.8
Drain-Source voltage
−1
VDS
−1.4
(V)
t – ID
C – VDS
100
5000
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
3000
30
(pF)
Switching time t (ns)
toff
10
Capacitance C
−1.2
Ciss
Coss
3
Crss
Common source
1 VGS = 0 V
f = 1 MHz
1000
tf
300
100
ton
30
tr
Ta = 25°C
0.3
0.1
1
Drain-Source voltage
10
100
10
0.1
VDS (V)
1
10
100
Drain current ID (mA)
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2014-03-01
SSM6L16FE
Q2 (P-ch MOSFET)
ID – VDS
ID – VGS
-3
-150
-2.7
(mA)
-4
-2.5
ID
-10
-200
-1000
Common Source
Ta = 25°C
Pulse test
Drain current
Drain current
ID
(mA)
-250
-2.3
-100
-2.1
-1.9
-50
-1.7
Common Source
VDS = -3 V
Pulse test
-100
Ta = 100°C
-10
25°C
−25°C
-1
-0.1
VGS = -1.5 V
0
0
-0.5
-1
-1.5
Drain - Source voltage
VDS
-0.01
0
-2
(V)
Drain – Source on-resistance
RDS (ON) (Ω)
Drain – Source on-resistance
RDS (ON) (Ω)
VGS (V)
Common Source
ID = -1 mA
Pulse test
18
20
15
-2.5 V
-4 V
16
14
12
10
8
Ta=100℃
25℃
6
4
-25℃
2
0
0
-1
-10
-100
Drain current
ID
0
-1000
-2
-4
Pulse
30
Gate threshold voltage
25
VGS =−1.5 V, ID=-1mA
20
15
-2.5 V, -10mA
10
5
0
−25
-4V, -10mA
0
25
50
75
-10
VGS (V)
Vth – Ta
-2.0
Common Source
Vth (V)
35
-8
-6
Gate – Source voltage
(mA)
RDS (ON) – Ta
40
Drain – Source on-resistance
RDS (ON) (Ω)
-4
RDS (ON) – VGS
VGS = -1.5 V
5
-3
20
Common Source
Ta = 25°C
Pulse test
10
-2
Gate - Source voltage
RDS (ON) – ID
30
25
-1
100
Ambient temperature Ta
125
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
−25
150
(°C)
Common Source
ID = -0.1 mA
VDS = -3 V
0
25
50
75
100
Ambient temperature Ta
7
125
150
(°C)
2014-03-01
SSM6L16FE
Q2 (P-ch MOSFET)
(mA)
200
IDR
100
IDR – VDS
250
Common Source
VDS =−3 V
Ta = 25°C
Pulse test
Drain reverse current
(mS)
⎪Yfs⎪
300
Forward transfer admittance
⎪Yfs⎪ – ID
1000
30
10
3
1
-1
-10
-100
Drain current
ID
Common Source
VGS = 0 V
Ta = 25°C
Pulse test
D
150
S
100
50
0
0
-1000
IDR
G
0.2
(mA)
0.4
0.6
Drain - Source
VDS
1.2
1.4
(V)
10000
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common Source
VDD = -3 V
VGS = 0~-2.5 V
Ta = 25°C
(ns)
3000
toff
1000
t
100
10
Switching time
C
(pF)
1.0
t – ID
C – VDS
1000
Capacitance
0.8
Ciss
Coss
tf
300
100
ton
tr
30
Crss
1
-0.1
-1
-10
10
-0.1
-100
Drain – Source voltage VDS
(V)
-1
Drain current ID
-10
-100
(mA)
Common Characteristics
PD* – Ta
Power dissipation
PD*
(mW)
250
Mounted on FR4 board
(25.4mmX25.4mmX1.6mm
Cu Pad:0.135mm2X6
200
150
100
50
0
0
20
40
60
80
100
Ambient temperature
120
Ta
140
160
(°C)
*:Total rating
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SSM6L16FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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