SSM6L35FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FE
○ High-Speed Switching Applications
○ Analog Switch Applications
Low ON-resistance
Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron =
8 Ω (max) (@VGS = 1.5 V)
: Ron =
4 Ω (max) (@VGS = 2.5 V)
: Ron =
3 Ω (max) (@VGS = 4.0 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V)
: Ron = 11 Ω (max) (@VGS = -2.5 V)
: Ron =
8 Ω (max) (@VGS = -4.0 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
6
2
5
3
4
0.55±0.05
Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V)
1
ES6
1.Source1 4.Source2
2.Gate1
5.Gate2
3.Drain2
6.Drain1
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
JEDEC
-
Gate–source voltage
VGSS
±10
V
JEITA
-
DC
ID
180
Pulse
IDP
360
Drain current
mA
TOSHIBA
0.2±0.05
N-ch, P-ch, 2-in-1
•
0.12±0.05
•
1.2±0.05
1.0±0.05
0.5 0.5
N-ch: 1.2-V drive
P-ch: 1.2-V drive
1.6±0.05
1.6±0.05
•
Unit: mm
2-2N1D
Weight: 3.0 mg (typ.)
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
-20
V
Gate–source voltage
VGSS
±10
V
DC
ID
-100
Pulse
IDP
-200
Drain current
mA
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristic
Symbol
Rating
Unit
PD(Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Drain power dissipation
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
Start of commercial production
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
2008-03
1
2015-09-09
SSM6L35FE
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±10 V, VDS = 0V
―
―
±10
μA
V (BR) DSS
ID = 0.1 mA, VGS = 0V
20
―
―
V
IDSS
VDS = 20 V, VGS = 0V
―
―
1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.4
―
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 50 mA
(Note 2)
115
―
―
mS
ID = 50 mA, VGS = 4 V
(Note 2)
―
1.5
3
ID = 50 mA, VGS = 2.5 V
(Note 2)
―
2
4
ID = 5 mA, VGS = 1.5 V
(Note 2)
―
3
8
ID = 5 mA, VGS = 1.2 V
(Note 2)
―
5
20
―
9.5
―
―
4.1
―
―
9.5
―
―
115
―
―
300
―
―
-0.9
-1.2
V
Min
Typ.
Max
Unit
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Turn-on time
ton
Turn-off time
toff
Drain–source forward voltage
VDS = 3 V, VGS = 0V, f = 1 MHz
VDD = 3 V, ID = 50 mA,
VGS = 0 to 2.5 V
ID = - 180 mA, VGS = 0V
VDSF
(Note 2)
Ω
pF
ns
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
IGSS
VGS = ±10 V, VDS = 0 V
―
―
±10
μA
V (BR) DSS
ID = -0.1 mA, VGS = 0 V
-20
―
―
V
IDSS
VDS = -20 V, VGS = 0 V
―
―
-1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.4
―
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -50 mA
(Note 2)
77
―
―
mS
ID = -50 mA, VGS = -4 V
(Note 2)
―
4.3
8
ID = -50 mA, VGS = -2.5 V
(Note 2)
―
5.6
11
ID = -5 mA, VGS = -1.5 V
(Note 2)
―
8.2
22
ID = -2 mA, VGS = -1.2 V
(Note 2)
―
11
44
―
12.2
―
―
6.5
―
―
10.4
―
―
175
―
―
251
―
―
0.83
1.2
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Drain–source ON-resistance
RDS (ON)
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
VDS = -3 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
Turn-off time
toff
VDD = -3 V, ID = -50 mA,
VGS = 0 to -2.5 V
VDSF
ID = 100 mA, VGS = 0 V
Drain–source forward voltage
(Note 2)
Ω
pF
ns
V
Note 2: Pulse test
Marking
6
Equivalent Circuit (top view)
5
4
6
LL3
1
2
5
Q1
3
1
4
Q2
2
3
2
2015-09-09
SSM6L35FE
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
90%
OUT
2.5 V
IN
0V
50 Ω
0
10%
RL
10 μs
VDD
(c) VOUT
VDD = 3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
10%
90%
VDS (ON)
tr
tf
ton
toff
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
50Ω
-2.5 V
10 μs
90%
-2.5 V
RL
VDD
(c) VOUT
VDD = -3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Q1 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of
the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for the Q2 of
the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
3
2015-09-09
SSM6L35FE
Q1 (N-ch MOSFET)
ID – VDS
10 V
4V
Common Source
2.5 V
Common Source
(mA)
VDS = 3 V
300
1.8 V
Drain current ID
Drain current ID
(mA)
Ta = 25°C
200
1.5 V
100
VGS = 1.2 V
0
0
0.5
1
1.5
Drain–source voltage VDS
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
25°C
Ta = 100°C
-25°C
6
8
Gate–source voltage VGS
10
25°C
0.1
3
(V)
RDS (ON) – VGS
Common Source
25°C
(V)
Ta = 100°C
-25°C
2
4
6
8
Gate–source voltage VGS
RDS (ON) – ID
Common Source
10
(V)
RDS (ON) – Ta
10
Common Source
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
2
5
0
0
10
VGS = 1.2 V
1.5 V
2.5 V
5
VGS = 1.2 V, ID = 5 mA
1.5 V, 5 mA
2.5 V, 50 mA
4V
0
1
1
ID = 50 mA
Ta = 25°C
5
-25°C
1
10
5
4
Ta = 100°C
Gate–source voltage VGS
ID = 5 mA
2
10
(V)
Common Source
0
0
100
0.01
0
2
RDS (ON) – VGS
10
ID – VGS
1000
400
4 V, 50 mA
10
Drain current ID
100
0
-50
1000
0
50
100
150
Ambient temperature Ta (°C)
(mA)
4
2015-09-09
SSM6L35FE
Q1 (N-ch MOSFET)
Vth – Ta
(mS)
Common Source
ID = 1 mA
VDS = 3 V
0.5
0
-50
0
|Yfs| – ID
1000
Forward transfer admittance |Yfs|
Gate threshold voltage Vth (V)
1.0
50
100
150
500
300
100
50
30
10
5
Common Source
VDS = 3 V
Ta = 25°C
3
1
1
10
Drain current ID
Ambient temperature Ta (°C)
IDR – VDS
10
G
25°C
S
Ta = 100°C
1
-25°C
0.1
-0.5
-1
Coss
Common Source
VGS = 0 V
f = 1 MHz
Crss
Ta = 25°C
0.1
0.5
1
5
10
50
100
(V)
Drain–source voltage VDS
(V)
t – ID
5000
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
3000 toff
(ns)
Ciss
5
-1.5
Drain–source voltage VDS
Switching time t
10
1
0.01
0
(mA)
50
D
IDR
100
1000
C – VDS
100
Common Source
VGS = 0 V
Capacitance C (pF)
Drain reverse current IDR
(mA)
1000
100
1000
tf
500
300
100
ton
50
30
10
0.1
tr
1
10
Drain current ID
100
1000
(mA)
5
2015-09-09
SSM6L35FE
Q2 (P-ch MOSFET)
ID – VDS
-250
ID – VGS
-1000
(mA)
-2.5 V
-150
-1.8 V
-100
-1.5 V
-50
VGS=-1.2 V
-1.5
-1
-0.5
Drain–source voltage VDS
-100
Ta = 100°C
-10
25°C
-25°C
-1
-0.1
-0.01
0
0
0
Common Source
VDS = -3 V
Ta = 25°C
-4 V
-200
Drain current ID
Drain current ID
(mA)
Common Source
-2
(V)
-1
(V)
RDS (ON) – VGS
15
Common Source
Common Source
ID = -50 mA
15
10
25°C
Ta=100°C
5
Drain–source ON-resistance
RDS (ON) (Ω)
ID = -5 mA
Drain–source ON-resistance
RDS (ON) (Ω)
-3
Gate–source voltage VGS
RDS (ON) – VGS
20
-2
10
25°C
Ta=100°C
5
-25°C
-25°C
0
0
-2
-4
-6
-8
Gate–source voltage VGS
0
-10
0
(V)
-2
-4
-10
-8
Gate–source voltage VGS
(V)
RDS (ON) – Ta
RDS (ON) – ID
20
20
Common Source
Common Source
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (Ω)
Drain–source ON-resistance
RDS (ON) (Ω)
-6
15
VGS = -1.2 V
10
-1.5 V
-2.5 V
5
-4 V
0
-1
-10
Drain current ID
-100
-1.5 V, -5 mA
10
(mA)
-2.5 V, -50 mA
-4 V, -50 mA
5
0
-50
-1000
VGS =-1.2 V, ID=-2 mA
15
0
50
100
150
Ambient temperature Ta (°C)
6
2015-09-09
SSM6L35FE
Q2 (P-ch MOSFET)
Common Source
ID = -1 mA
VDS = -3 V
-0.8
Forward transfer admittance |Yfs|
Gate threshold voltage Vth (V)
(mS)
Vth – Ta
-1
-0.6
-0.4
-0.2
0
−50
0
100
50
150
|Yfs| – ID
1000
100
10
Common Source
VDS = -3 V
Ta = 25°C
1
-1
-10
Ambient temperature Ta (°C)
(mA)
Drain current ID
IDR – VDS
1000
VGS = 0 V
D
G
Capacitance C (pF)
Drain reverse current IDR
100
IDR
10
S
25°C
1
Ta=100°C
0.1
-25°C
0.01
0
0.2
0.4
0.6
0.8
1
Drain–source voltage VDS
1.2
10
Ciss
Coss
1
-0.1
1.4
-1
(V)
(mW)
Drain Power Dissipation PD *
(ns)
tf
ton
tr
10
-0.1
-1
-10
Drain current ID
-100
(V)
PD *– Ta
1000
100
-10
Drain–source voltage VDS
Common Source
VDD = -3 V
VGS = 0 to -2.5 V
Ta = 25°C
toff
Crss
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
t – ID
10000
Switching time t
(mA)
C – VDS
100
Common Source
-1000
-100
-100
250
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
200
150
100
50
0
-1000
0
*:Total Rating
(mA)
7
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
2015-09-09
SSM6L35FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2015-09-09
