SSM6L35FE

SSM6L35FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE ○ High-Speed Switching Applications ○ Analog Switch Applications • • • N-ch: 1.2-V drive P-ch: 1.2-V drive 1.6±0.05 Unit: mm 1.6±0.05 1.2±0.05 N-ch, P-ch, 2-in-1 Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = : Ron = : Ron = 8 Ω (max) (@VGS = 1.5 V) 4 Ω (max) (@VGS = 2.5 V) 3 Ω (max) (@VGS = 4.0 V) 1.0±0.05 0.5 0.5 1 2 3 6 5 4 0.2±0.05 0.12±0.05 1.Source1 4.Source2 2.Gate1 3.Drain2 5.Gate2 6.Drain1 : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 180 360 Unit V V mA ES6 JEDEC JEITA TOSHIBA 0.55±0.05 Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) 2-2N1D Weight: 3.0 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating -20 ±10 -100 -200 Unit V V mA Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) Characteristic Drain power dissipation Channel temperature Storage temperature range Symbol PD(Note 1) Tch Tstg Rating 150 150 −55 to 150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6) 1 2008-03-21 SSM6L35FE Q1 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±10 V, VDS = 0V ID = 0.1 mA, VGS = 0V VDS = 20 V, VGS = 0V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 50 mA ID = 50 mA, VGS = 4 V Drain–source ON-resistance RDS (ON) ID = 50 mA, VGS = 2.5 V ID = 5 mA, VGS = 1.5 V ID = 5 mA, VGS = 1.2 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDSF VDD = 3 V, ID = 50 mA, VGS = 0 to 2.5 V ID = - 180 mA, VGS = 0V (Note 2) VDS = 3 V, VGS = 0V, f = 1 MHz (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Min ⎯ 20 ⎯ 0.4 115 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.5 2 3 5 9.5 4.1 9.5 115 300 -0.9 Max ±10 ⎯ 1 1.0 ⎯ 3 4 8 20 ⎯ ⎯ ⎯ ⎯ ⎯ -1.2 ns V pF Ω Unit μA V μA V mS Drain–source forward voltage Q2 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain–source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±10 V, VDS = 0 V ID = -0.1 mA, VGS = 0 V VDS = -20 V, VGS = 0 V VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -50 mA ID = -50 mA, VGS = -4 V Drain–source ON-resistance RDS (ON) ID = -50 mA, VGS = -2.5 V ID = -5 mA, VGS = -1.5 V ID = -2 mA, VGS = -1.2 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDSF VDD = -3 V, ID = -50 mA, VGS = 0 to -2.5 V ID = 100 mA, VGS = 0 V (Note 2) VDS = -3 V, VGS = 0 V, f = 1 MHz (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Min ⎯ -20 ⎯ -0.4 77 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 4.3 5.6 8.2 11 12.2 6.5 10.4 175 251 0.83 Max ±10 ⎯ -1 -1.0 ⎯ 8 11 22 44 ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 ns V pF Ω Unit μA V μA V mS Drain–source forward voltage Note 2: Pulse test Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 LL3 1 2 3 1 Q1 Q2 2 3 2 2008-03-21 SSM6L35FE Q1 Switching Time Test Circuit (a) Test Circuit 2.5 V 0 10 μs VDD = 3 V D.U. ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 0V 50 Ω RL VDD 10% (b) VIN 2.5 V 90% (c) VOUT VDD 10% 90% tr ton toff tf VDS (ON) Q2 Switching Time Test Circuit (a) Test Circuit 0 OUT IN −2.5 V 50Ω RL VDD 90% (b) VIN 0V 10% −2.5V 10 μs (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = -3 V D.U. ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD Q1 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Q2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2 of the SSM6L35FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 3 2008-03-21 SSM6L35FE Q1 (N-ch MOSFET) ID – VDS 400 10 V 4V 2.5 V Common Source Ta = 25°C 100 1000 Common Source VDS = 3 V ID – VGS (mA) 300 1.8 V (mA) ID ID 10 Ta = 100°C Drain current Drain current 200 1.5 V 100 VGS = 1.2 V 25°C 1 −25°C 0.1 0 0 0.5 1 1.5 2 0.01 0 1 2 3 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – VGS 10 Common Source ID = 5 m A 10 RDS (ON) – VGS Common Source ID = 50 mA Drain–source ON-resistance RDS (ON) (Ω) 5 Drain–source ON-resistance RDS (ON) (Ω) 5 25°C Ta = 100°C −25°C 0 0 2 4 6 8 10 25°C Ta = 100°C −25°C 0 0 2 4 6 8 10 Gate–source voltage VGS (V) Gate–source voltage VGS (V) RDS (ON) – ID 10 Common Source Ta = 25°C 10 Common Source RDS (ON) – Ta Drain–source ON-resistance RDS (ON) (Ω) 5 VGS = 1.2 V Drain–source ON-resistance RDS (ON) (Ω) 5 VGS = 1.2 V, ID = 5 mA 1.5 V 2.5 V 4V 0 1 10 100 1000 1.5 V, 5 mA 2.5 V, 50 mA 4 V, 50 mA 0 −50 0 50 100 150 Drain current ID (mA) Ambient temperature Ta (°C) 4 2008-03-21 SSM6L35FE Q1 (N-ch MOSFET) Vth – Ta Vth (V) Common Source ID = 1 m A VDS = 3 V ⎪Yfs⎪ – ID (mS) ⎪Yfs⎪ Forward transfer admittance 1000 500 300 1.0 100 50 30 Gate threshold voltage 0.5 10 5 3 Common Source VDS = 3 V Ta = 25°C 10 100 1000 0 −50 0 50 100 150 1 1 Ambient temperature Ta (°C) Drain current ID (mA) IDR – VDS 1000 C – VDS 100 50 (mA) Common Source VGS = 0 V D IDR G IDR Drain reverse current 10 C Capacitance 10 Ciss 5 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 1 Crss Coss S 25°C Ta = 100°C 1 −25°C 0.1 (pF) 100 0.01 0 0.1 0.5 1 5 10 50 100 −0.5 −1 −1.5 Drain–source voltage VDS (V) Drain–source voltage VDS (V) t – ID 5000 3000 toff Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C (ns) 1000 500 300 tf Switching time t 100 50 30 ton tr 10 0.1 1 10 100 1000 Drain current ID (mA) 5 2008-03-21 SSM6L35FE Q2 (P-ch MOSFET) ID – VDS -250 Common Source -200 -10V -4V Ta = 25°C -100 -2.5V -150 -1.8V -100 -1.5V -50 -1000 Common Source VDS = -3V ID – VGS (mA) (mA) Ta = 100°C -10 25°C -1 −25°C ID Drain current Drain current ID VGS=-1.2V -0.1 0 0 -0.5 -1 -1.5 -2 -0.01 0 -1 -2 -3 Drain–source voltage VDS (V) Gate–source voltage VGS (V) RDS (ON) – VGS 20 Common Source ID = -5 mA 15 RDS (ON) – VGS Common Source ID = -50 mA Drain–source ON-resistance RDS (ON) (Ω) 15 Drain–source ON-resistance RDS (ON) (Ω) 10 10 25℃ 5 Ta=100℃ 25℃ 5 Ta=100℃ -25℃ 0 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 -25℃ -10 Gate–source voltage VGS (V) Gate–source voltage VGS (V) RDS (ON) – ID 20 Common Source Ta = 25°C 20 Common Source RDS (ON) – Ta Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) 15 VGS = -1.2 V 10 -1.5 V -2.5 V 5 -4 V 15 VGS =−1.2 V, ID=-2mA -1.5 V, -5mA 10 -2.5 V, -50mA 5 -4V, -50mA 0 -1 -10 -100 -1000 0 −50 0 50 100 150 Drain current ID (mA) Ambient temperature Ta (°C) 6 2008-03-21 SSM6L35FE Q2 (P-ch MOSFET) Vth – Ta -1 ⎪Yfs⎪ – ID (mS) ⎪Yfs⎪ Forward transfer admittance 100 10 Common Source ID = -1 mA VDS = -3 V 1000 Vth (V) Gate threshold voltage -0.8 -0.6 -0.4 -0.2 Common Source VDS = -3 V Ta = 25°C 1 -1 -10 -100 -1000 0 −50 0 50 100 150 Ambient temperature Ta (°C) Drain current ID (mA) IDR – VDS 1000 Common Source VGS = 0 V 100 G 10 S 1 Ta=100℃ 0.1 -25°C 25°C D IDR 100 C – VDS IDR (mA) Drain reverse current C 10 (pF) Capacitance Ciss Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25°C -1 -10 -100 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 -0.1 Drain–source voltage VDS (V) Drain–source voltage VDS (V) t – ID Common Source VDD = -3 V VGS = 0 to -2.5 V Ta = 25°C PD *– Ta PD * (mW) 250 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) 200 10000 (ns) toff 1000 Drain Power Dissipation t 150 Switching time tf 100 100 ton tr 50 10 -0.1 -1 -10 -100 -1000 0 0 20 40 60 80 100 120 140 160 Drain current ID (mA) *:Total Rating Ambient temperature Ta (°C) 7 2008-03-21 SSM6L35FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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