SSM6L36TU,LF

SSM6L36TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L36TU Unit: mm ○ High-Speed Switching Applications 2.1±0.1 Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) 1 6 2 5 3 4 0.7±0.05 Q2 P-ch: Ron = 3.60Ω (max) (@VGS = -1.5 V) 0.166±0.05 Ron = 0.63Ω (max) (@VGS = 5.0 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) +0.1 0.3-0.05 Low ON-resistance Q1 N-ch: Ron = 1.52Ω (max) (@VGS = 1.5 V) 0.65 0.65 • 1.3±0.1 1.5-V drive 2.0±0.1 1.7±0.1 • Ron = 1.31Ω (max) (@VGS = -4.5 V) 1.Source1 4.Source2 5.Gate2 2.Gate1 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V DC ID 500 Pulse IDP 1000 Drain current mA Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±8 V DC ID -330 Pulse IDP -660 Drain current 6.Drain1 3.Drain2 JEDEC - JEITA - TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics UF6 mA Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) Characteristics Symbol Rating Unit PD(Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain power dissipation Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Start of commercial production 2008-06 1 2014-03-01 SSM6L36TU Q1 Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Symbol Test Condition Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0V 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS =20 V, VGS = 0V ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0V ⎯ ⎯ ±1 μA 0.35 ⎯ 1.0 V mS Gate threshold voltage Vth Forward transfer admittance |Yfs| Drain-source ON-resistance RDS (ON) VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 200 mA (Note2) 420 840 ⎯ ID = 200 mA, VGS = 5.0 V (Note2) ⎯ 0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note2) ⎯ 0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note2) ⎯ 0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note2) ⎯ 0.81 1.14 ID = 50 mA, VGS = 1.5 V (Note2) ⎯ 0.95 1.52 ⎯ 46 ⎯ ⎯ 10.8 ⎯ Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss ⎯ 7.3 ⎯ Total Gate Charge Qg ⎯ 1.23 ⎯ Gate−Source Charge Qgs ⎯ 0.60 ⎯ Gate−Drain Charge Qgd ⎯ 0.63 ⎯ Switching time Turn-on time Turn-off time Drain-source forward voltage VDS = 10 V, VGS = 0V, f = 1 MHz VDS = 10 V, ID = 0.5 A, VGS = 4.0 V Ω pF nC ton VDD = 10 V, ID = 200 mA ⎯ 30 ⎯ toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 75 ⎯ ⎯ -0.88 -1.2 V Min Typ. Max Unit VDSF ID = -0.5 A, VGS = 0 V (Note2) ns Q2 Electrical Characteristics (Ta = 25°C) Characteristics Drain-source breakdown voltage Symbol Test Conditions V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = 8 V -12 ⎯ ⎯ ⎯ ⎯ -10 μA V Drain cutoff current IDSS VDS = -16 V, VGS = 0 V Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -100mA (Note2) 190 ⎯ ⎯ mS ID = -100mA, VGS = -4.5 V (Note2) ⎯ 0.95 1.31 ID = -80mA, VGS = -2.8 V (Note2) ⎯ 1.22 1.60 ID = -40mA, VGS = -1.8 V (Note2) ⎯ 1.80 2.70 ID = -30mA, VGS = -1.5 V (Note2) ⎯ 2.23 3.60 ⎯ 43 ⎯ ⎯ 10.3 ⎯ 6.1 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss ⎯ Total Gate Charge Qg ⎯ 1.2 ⎯ Gate−Source Charge Qgs ⎯ 0.85 ⎯ Gate−Drain Charge Qgd ⎯ 0.35 ⎯ Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, IDS = -330mA, VGS = -4 V Turn-on time ton VDD = -10 V, ID = -100mA ⎯ 90 ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 50Ω ⎯ 200 ⎯ ⎯ 0.88 1.2 Drain-source forward voltage VDSF ID = 330mA, VGS = 0 V (Note2) Ω pF nC ns V Note 2: Pulse test 2 2014-03-01 SSM6L36TU Q1 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V 90% OUT 2.5 V IN 0V 50 Ω 0 10% RL 10 μs (c) VOUT VDD VDD = 10 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD 10% 90% VDS (ON) tr tf ton toff Q2 Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 10% OUT 0 IN 90% −2.5 V 50Ω −2.5V 10 μs RL (c) VOUT VDD VDD = -10 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C Marking 6 90% 10% VDD tr ton tf toff Equivalent Circuit (top view) 5 4 6 LL4 1 VDS (ON) 2 5 Q1 3 1 4 Q2 2 3 Q1 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of the SSM6L36TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Q2 Usage considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2 of the SSM6L36TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 3 2014-03-01 SSM6L36TU Q1 (Nch MOS FET) ID – VDS ID – VGS 10 V 1000 2.5 V 1.8 V (mA) 4.5 V 800 100 ID Ta = 100 °C 600 1.5 V Drain current Drain current ID (mA) 1000 400 VGS = 1.2 V 200 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS Common Source Common Source Ta = 25°C Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) ID =200mA 25 °C 1 Ta = 100 °C − 25 °C 0 4 2 6 Gate-source voltage (V) 8 VGS 2 1.8 V 1.5 V 1 VGS = 4.5V 2.5V 0 10 0 (V) 600 400 200 Drain current RDS (ON) – Ta ID 1.0 100m A / 1.8 V Gate threshold voltage 200m A / 2.5 V 200m A / 4.5 V 200m A / 5.0 V 0.5 0 −50 0 50 Ambient temperature 1000 (mA) 100 Ta Common Source Vth (V) ID = 50m A / VGS = 1.5 V Common Source 800 Vth – Ta 1.5 Drain-source ON-resistance RDS (ON) (Ω) VGS 3 2 1.0 3.0 RDS (ON) – ID 3 0 2.0 VDS = 3 V ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 4 100 Ta 150 (°C) 2014-03-01 SSM6L36TU |Yfs| – ID 10000 IDR – VDS 1000 Common Source (mA) VDS = 3 V 3000 IDR Ta = 25°C 1000 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) Q1 (N-ch MOSFET) 300 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 S –0.5 (mA) –1.0 Drain-source voltage C – VDS VDS –1.5 (V) t – ID 1000 100 IDR G −25 °C 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C Common Source toff (ns) Ciss 30 VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω tf 10 Coss Crss 5 3 Switching time Capacitance C t (pF) 50 Common Source 100 ton Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 tr 1 10 Drain-source voltage VDS 10 100 (V) 1 10 Drain current 100 ID 1000 (mA) Dynamic Input Characteristic 10 ID = 0.5 A Ta = 25°C 8 Gate-source voltage VGS (V) Common Source 6 VDD = 10 V VDD = 16 V 4 2 0 0 1 Total Gate Charge 2 Qg 3 (nC) 5 2014-03-01 SSM6L36TU Q2 (P-ch MOSFET) ID – VDS -2.8V -4.5V -2.5V -500 (mA) -8V Common Source Ta = 25 °C -100 -10 Common Source VDS = -3 V Ta = 100 °C -1.8 V -400 -300 Drain current Drain current ID (mA) -600 ID – VGS -1000 ID -700 -1.5 V -200 VGS=-1.2 V -100 0 0 -0.5 -1.0 Drain-source voltage 25 °C − 25 °C -0.1 -0.01 0 -1.5 VDS -1 -1.0 (V) Gate-source voltage RDS (ON) – VGS VGS (V) RDS (ON) – ID 5 5 ID =-100mA Common Source Ta = 25°C Common Source Ta = 25°C 4 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) -2.0 3 2 25 °C Ta = 100 °C 1 4 3 -1.5 V -1.8 V 2 -2.8 V 1 VGS = -4.5 V − 25 °C 0 0 -2 -4 Gate-source voltage VGS 0 -8 -6 0 (V) -100 -200 Drain current RDS (ON) – Ta -500 ID (mA) -600 -700 Vth – Ta 4 -40mA / -1.8 V -30mA / -1.5V 3 -80mA / -2.8 V 2 1 ID = -100mA / VGS = -4.5 V 0 Common Source Vth (V) Common Source Gate threshold voltage Drain-source ON-resistance RDS (ON) (Ω) -400 -1.0 5 0 −50 -300 50 Ambient temperature 100 Ta VDS = -3 V ID = -1 mA -0.5 0 −50 150 (°C) 0 50 Ambient temperature 6 100 Ta 150 (°C) 2014-03-01 SSM6L36TU IDR – VDS |Yfs| – ID 1000 1000 Common Source VGS = 0 V (mA) Common Source VDS = -3 V Ta = 25°C ⎪Yfs⎪ Forward transfer admittance IDR 300 Drain reverse current (mS) Q2 (P-ch MOSFET) 100 30 10 -100 -10 -1 Drain current ID (pF) S 10 Ta =100 °C 25 °C 1 −25 °C 0.2 (mA) 0.4 0.6 Drain-source voltage 0.8 VDS (ns) C 1.2 (V) Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 50Ω Ciss 30 1.0 t – ID 10000 50 1000 toff 10 Switching time t Capacitance IDR G 0.1 0 -1000 C – VDS 100 D 100 Coss Crss 5 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 3 1 -0.1 -1 -10 Drain-source voltage 100 ton tr 10 -100 VDS tf -1 (V) -10 Drain current -100 ID -1000 (mA) Dynamic Input Characteristic -8 Gate-source voltage VGS (V) Common Source ID = -0.33 A Ta = 25°C -6 VDD =-10V -4 VDD = - 16 V -2 0 0 1 Total Gate Charge 2 Qg 3 (nC) 7 2014-03-01 SSM6L36TU Q1, Q2 Common PD* – Ta 800 Mounted on an FR4 board. (25.4mm × 25.4mm × 1.6mm, 2 Cu Pad : 645 mm ) t=10s Drain power dissipation P D* (mW) 1000 600 DC 400 200 0 -40 -20 *: Total Rating 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 8 2014-03-01 SSM6L36TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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