SSM6L40TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L40TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
1
6
2
5
3
4
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
DC
ID
1.6
Pulse
IDP
3.2
Drain current
A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
1.Source1
4.Source2
2.Gate1
5.Gate2
3.Drain2
6.Drain1
UF6
JEDEC
―
V
JEITA
―
V
TOSHIBA
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
Gate-source voltage
VGSS
±20
DC
ID
−1.4
Pulse
IDP
−2.8
Drain current
0.7±0.05
Characteristics
0.166±0.05
Q1 Absolute Maximum Ratings (Ta = 25°C)
+0.1
0.3-0.05
Q1 N-ch: Ron = 182 mΩ (max) (@VGS = 4 V)
Ron = 122 mΩ (max) (@VGS = 10 V)
Q2 P-ch: Ron = 403 mΩ (max) (@VGS = -4 V)
Ron = 226 mΩ (max) (@VGS = -10 V)
0.65 0.65
1.7±0.1
1.3±0.1
•
•
N-ch: 4.0-V drive
P-ch: 4.0 -V drive
N-ch, P-ch, 2-in-1
Low ON-resistance
2.0±0.1
•
Unit: mm
2.1±0.1
A
2-2T1B
Weight: 7.0 mg (typ.)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
Characteristics
Drain power dissipation
Symbol
Rating
Unit
PD(Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm )
Marking
6
5
Equivalent Circuit (top view)
4
6
LL2
1
2
5
Q1
3
1
4
Q2
2
Start of commercial production
3
2008-02
1
2014-03-01
SSM6L40TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = -20 V
15
⎯
⎯
Drain cutoff current
IDSS
VDS =30 V, VGS = 0 V
⎯
⎯
1
μA
Gate leakage current
IGSS
Drain-source breakdown voltage
V
VGS = ±16 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = 5 V, ID = 1 mA
1.0
⎯
2.6
V
Forward transfer admittance
|Yfs|
VDS = 5 V, ID = 1A
(Note 2)
1.9
3.7
⎯
S
Drain-source ON-resistance
RDS (ON)
ID = 1 A, VGS = 10 V
(Note 2)
⎯
96
122
ID = 0.5 A, VGS = 4 V
(Note 2)
⎯
130
182
⎯
180
⎯
⎯
34
⎯
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
⎯
27
⎯
Total Gate Charge
Qg
⎯
5.1
⎯
Gate−Source Charge
Qgs
⎯
3.9
⎯
Gate−Drain Charge
Qgd
⎯
1.2
⎯
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, ID = 1.6 A, VGS = 10 V
mΩ
pF
nC
ton
VDD = 15 V, ID = 0.5 A
⎯
9.5
⎯
toff
VGS = 0 to 4 V, RG = 10 Ω
⎯
9.0
⎯
⎯
-0.8
-1.2
V
Min
Typ.
Max
Unit
VDSF
ID = -1.6 A, VGS = 0 V
(Note 2)
ns
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
V (BR) DSS
ID = -1 mA, VGS = 0 V
-30
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +20 V
-15
⎯
⎯
Drain cutoff current
IDSS
VDS = -30 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±1
μA
-0.8
⎯
-2.0
V
S
Drain-source breakdown voltage
Gate threshold voltage
Vth
Forward transfer admittance
⏐Yfs⏐
Drain-source ON-resistance
RDS (ON)
VDS = -5 V, ID = -1 mA
VDS = -5 V, ID = -1 A
(Note 2)
1.0
2.0
⎯
ID = -1.0 A, VGS = -10 V
(Note 2)
⎯
175
226
ID = -0.5 A, VGS = -4.0 V
(Note 2)
⎯
290
403
⎯
120
⎯
⎯
32
⎯
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
⎯
21
⎯
Total Gate Charge
Qg
⎯
2.9
⎯
Gate−Source Charge
Qgs
⎯
2.2
⎯
Gate−Drain Charge
Qgd
⎯
0.7
⎯
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
VDS = -15 V, VGS = 0 V, f = 1 MHz
VDS = -15 V, ID = -1.4 A, VGS = -10 V
ton
VDD = -15 V, ID = -1 A,
⎯
12
⎯
toff
VGS = 0 to -4 V, RG = 10 Ω
⎯
8.5
⎯
⎯
0.87
1.2
VDSF
ID = 1.4 A, VGS = 0 V
(Note 2)
V
mΩ
pF
nC
ns
V
Note 2: Pulse test
2
2014-03-01
SSM6L40TU
Q1 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
4.0 V
OUT
4.0 V
90%
IN
10%
0V
RG
0
10 μs
VDD
VDD
(c) VOUT
VDD = 15 V
RG = 10 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
90%
VDS (ON)
tf
tr
ton
toff
Q2 Switching Time Test Circuit
(a) Test Circuit
(b) VIN
0V
10%
OUT
0
IN
90%
−4.0 V
RG
−4.0V
10 μs
RL
VDD
(c) VOUT
VDD =− 15 V
RG = 10 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Q1 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the Q1 of
the SSM6L40TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Q2 Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2
of the SSM6L40TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower
than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
3
2014-03-01
SSM6L40TU
Q1 (N-ch MOSFET)
ID – VGS
ID – VDS
10
Common Source
Ta = 25 °C
5.0 V
3.5 V
(A)
10 V
4.0 V
3
3.0 V
ID
3.3 V
2
Drain current
Drain current
ID
(A)
4
VGS = 2.5 V
1
0
0
0.2
0.4
0.6
0.8
Drain-source voltage
VDS
Common Source
VDS = 5 V
1
0.1
Ta = 100 °C
− 25 °C
0.001
0.0001
0
1.0
2.0
(V)
RDS (ON) – VGS
(V)
RDS (ON) – ID
ID =1.0A
Common Source
Common Source
Ta = 25°C
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain-source ON-resistance
RDS (ON) (mΩ)
VGS
400
300
200
25 °C
Ta = 100 °C
100
− 25 °C
0
10
VGS
300
200
4.0 V
100
VGS = 10V
0
20
Gate-source voltage
0
(V)
1
RDS (ON) – Ta
3
ID
4
(A)
Vth – Ta
2.0
Common Source
Vth (V)
Common Source
Gate threshold voltage
300
ID = 0.5 A / VGS = 4.0 V
200
1.0 A / 10 V
100
0
−50
2
Drain current
400
Drain-source ON-resistance
RDS (ON) (mΩ)
4.0
Gate-source voltage
400
0
25 °C
0.01
0
50
Ambient temperature
100
Ta
VDS = 5 V
ID = 1 mA
1.0
0
−50
150
(°C)
0
50
Ambient temperature
4
100
Ta
150
(°C)
2014-03-01
SSM6L40TU
IDR – VDS
|Yfs| – ID
10
10
Common Source
(A)
VDS = 5 V
IDR
Ta = 25°C
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(S)
Q1 (N-ch MOSFET)
1
0.3
1
25 °C
0.1
Common Source
VGS = 0 V
Ta =100 °C
D
0.01
−25 °C
0.1
0.01
1
0.1
Drain current
ID
S
0.001
0
10
–0.5
(A)
–1.0
Drain-source voltage
C – VDS
(ns)
t
100
Switching time
(pF)
C
Ciss
50
30
Coss
Crss
10
5
3
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
toff
100
VDS
(V)
Common Source
VDD = 15 V
VGS = 0 to 4.0 V
Ta = 25 °C
RG = 10 Ω
500
300
–1.5
t – ID
1000
1000
Capacitance
IDR
G
tf
10
ton
tr
1
10
Drain-source voltage
VDS
1
0.01
100
(V)
0.1
Drain current
1
ID
10
(A)
Dynamic Input Characteristic
10
ID = 1.6A
8
Ta = 25°C
Gate-Source voltage
VGS
(V)
Common Source
6
VDD = 15 V
4
VDD = 24 V
2
0
0
1
2
3
Total Gate Charge
4
Qg
5
6
(nC)
5
2014-03-01
SSM6L40TU
Q2 (P-ch MOSFET)
ID – VDS
Common Source
Ta = 25 °C
ID – VGS
-5.0 V
-3.5 V
-1
-2
ID
ID
-3.3 V
-3.0 V
-1
-0.1
Drain current
Drain current
Common Source
VDS = -5 V
-4.0 V
(A)
-10 V
-10
(A)
-3
-2.8 V
Ta = 100 °C
-0.01
25 °C
− 25 °C
-0.001
VGS =- 2.5V
0
0
-0.2
-0.4
-0.6
Drain-source voltage
-0.8
VDS
-0.0001
0
-1.0
-1.0
(V)
RDS (ON) – VGS
Common Source
Ta = 25°C
Common Source
800
600
400
25 °C
Ta = 100 °C
200
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain-source ON-resistance
RDS (ON) (mΩ)
-4.0
(V)
RDS (ON) – ID
ID =−1.0A
800
600
400
-4.0 V
200
VGS = -10 V
− 25 °C
0
-10
0
-20
Gate-source voltage
VGS
0
(V)
RDS (ON) – Ta
(A)
Vth – Ta
Common Source
Vth (V)
Gate threshold voltage
800
600
ID = -0.5 A / VGS = -4.0 V
-1.0 A / -10 V
200
0
−50
ID
-3
-2.0
Common Source
400
-2
-1
Drain current
1000
Drain-source ON-resistance
RDS (ON) (mΩ)
-3.0
VGS
1000
1000
0
-2.0
Gate-source voltage
0
50
Ambient temperature
100
Ta
VDS = -5.0 V
ID = -1 mA
-1.0
0
−50
150
(°C)
0
50
Ambient temperature
6
100
Ta
150
(°C)
2014-03-01
SSM6L40TU
IDR – VDS
|Yfs| – ID
10
10
Common Source
Common Source
VGS = 0 V
(A)
VDS = -5.0 V
IDR
Ta = 25°C
3
Drain reverse current
Forward transfer admittance
⎪Yfs⎪
(S)
Q2 (P-ch MOSFET)
1
0.3
D
1
IDR
G
S
25 °C
0.1
Ta =100 °C
0.01
−25 °C
0.1
-0.01
-1
-0.1
Drain current
ID
0.001
0
-10
0.5
(A)
1.0
Drain-source voltage
C – VDS
Common Source
VDD = -15 V
VGS = 0 to -4.0 V
Ta = 25 °C
RG = 10 Ω
500
(ns)
100
t
Ciss
Switching time
C
(pF)
300
Capacitance
(V)
t – ID
1000
1000
1.5
VDS
50
30
Coss
Crss
10
Common Source
Ta = 25°C
f = 1 MHz
VGS = 0 V
5
3
1
-0.1
-1
-10
Drain-source voltage
VDS
toff
100
tf
10 ton
tr
1
-0.01
-100
(V)
-0.1
Drain current
-1
ID
-10
(A)
Dynamic Input Characteristic
-10
ID = -1.4 A
-8
Ta = 25°C
Gate-Source voltage
VGS
(V)
Common Source
-6
VDD = -15 V
-4
VDD = -24 V
-2
0
0
1
2
Total Gate Charge
3
4
Qg
5
(nC)
7
2014-03-01
SSM6L40TU
Q1, Q2 Common
PD* – Ta
rth – tw
Drain power dissipation PD* (mW)
Transient thermal impedance rth (°C/W)
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
Pulse width
100
10
tw
1000
800
Mounted on FR4 board
2
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm )
t=10s
600
DC
400
200
0
-40
1000
(s)
-20
*:Total Rating
8
0
20
40
60
80
Ambient temperature
100 120
Ta
140 160
(°C)
2014-03-01
SSM6L40TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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