SSM6N03FE

SSM6N03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N03FE High Speed Switching Applications Analog Switch Applications • • • • Input impedance is high. Driving current is extremely low. Can be directly driven by a CMOS device even at low voltage due to low gate threshold voltage. High-speed switching. Housed in a ultra-small package which is suitable for high density mounting. Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2N1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6) 0.3 mm Equivalent Circuit (top view) 6 PIN 5 PIN 4 PIN 0.45 mm Marking 6 PIN 5 PIN 4 PIN DA Q1 1 PIN 2 PIN Q2 3 PIN 1 PIN 2 PIN 3 PIN 1 2007-11-01 SSM6N03FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton Test Condition VGS = 10 V, VDS = 0 V ID = 100 μA, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0 V, f = 1 MHz VDS = 3 V, VGS = 0 V, f = 1 MHz VDS = 3 V, VGS = 0 V, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ⎯ 20 ⎯ 0.7 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 60 4 11.0 3.3 9.3 0.16 0.19 Max 1 ⎯ 1 1.3 ⎯ 12 ⎯ ⎯ ⎯ ⎯ μs ⎯ Unit μA V μA V mS Ω pF pF pF Switching Time Test Circuit (a) Test circuit 2.5 V Input 50 Ω 0 10 μs VIN ID VDD = 3 V Output D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 Ω) RL Common Source Ta = 25°C VDD 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6N03FE (Q1, Q2 Common) ID – VDS 100 2.5 100 2.0 Common Source Ta = 25°C 80 80 4.0 2.5 2.2 2.0 ID – VDS(Low voltage region) Drain current ID (mA) Drain current ID (mA) 1.9 60 1.8 40 Common Source Ta = 25°C 60 1.8 40 1.7 1.6 1.6 20 VGS = 1.4 V 20 VGS = 1.4 V 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) IDR – VDS 100 Common Source VGS = 0 Ta = 25°C 1000 Common Source VDS = 3 V 100 ID – VGS (mA) Drain reverse current IDR Drain current ID (mA) 10 D G 1 S 0.1 IDR 10 Ta = 100°C 1 25°C −25°C 0.1 0.01 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 0.01 0 0.5 1 1.5 2 2.5 3 Drain-source voltage VDS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 300 Common Source VDS = 3 V 100 Common Source 50 VGS = 0 f = 1 MHz Ta = 25°C C – VDS Forward transfer admittance ⏐Yfs⏐ (mS) Ta = 25°C 100 (pF) Capacitance C 50 30 30 10 5 3 Ciss Coss 10 Crss 1 0.1 5 1 3 5 10 30 50 100 0.3 1 3 10 30 Drain current ID (mA) Drain-source voltage VDS (V) 3 2007-11-01 SSM6N03FE (Q1, Q2 Common) RDS (ON) – ID 10 Common Source Ta = 25°C 8 10000 5000 t – ID Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C toff tf Drain-source on resistance RDS (ON) (Ω) Switching time t (ns) 3000 6 1000 500 300 4 2.5 ton 100 50 tr 2 VGS = 4 V 30 0.1 20 40 60 80 100 0 0 0.3 1 3 10 30 100 Drain current ID (mA) Drain current ID (mA) RDS (ON) – Ta 10 Common Source ID = 10 mA 250 PD* – Ta (mW) Mounted on FR4 board. 200 (25.4 mm × 25.4 mm × 1.6 t 2 Cu Pad: 0.135 mm × 6) Drain-source on resistance RDS (ON) (Ω) 8 6 2.5 4 Drain power dissipation PD* 125 150 150 100 2 VGS = 4 V 50 0 −25 0 25 50 75 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N03FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01