SSM6N04FU

SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications · · · · With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55~150 Unit V V mA mW °C °C Note: Total rating JEDEC JEITA TOSHIBA ― ― 2-2J1C Weight: 6.8 mg (typ.) Marking Pin Assignment (top view) (Q1, Q2 common) Equivalent Circuit 1 2003-03-28 SSM6N04FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff RGS Test Condition VGS = 10 V, VDS = 0 ID = 100 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V VGS = 0~10 V Min ¾ 20 ¾ 0.7 25 ¾ ¾ ¾ ¾ ¾ ¾ 0.7 Typ. ¾ ¾ ¾ ¾ 50 4 11.0 3.3 9.3 0.16 0.19 1.0 Max 15 ¾ 1 1.3 ¾ 12 ¾ ¾ ¾ ¾ ¾ 1.3 Unit mA V mA V mS W pF pF pF ms MW Gate-source resistor Switching Time Test Circuit (a) Test circuit (b) VIN VGS (c) VOUT VDS 2 2003-03-28 SSM6N04FU (Q1, Q2 common) 3 2003-03-28 SSM6N04FU (Q1, Q2 common) *: Total rating 4 2003-03-28 SSM6N04FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-28