SSM6N16FE

SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Analog Switching Applications • • Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD(Note 1) Tch Tstg Rating 20 ±10 100 200 150 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-2N1D absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm2 × 6) 0.3 mm Note: Marking 6 5 4 0.45 mm Equivalent Circuit 6 5 4 DS 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6N16FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V Drain-Source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Min ⎯ 20 ⎯ 0.6 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max ±1 ⎯ 1 1.1 ⎯ 3.0 4.0 15 ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF ns Ω Unit μA V μA V mS Switching Time Test Circuit (a) Test circuit 2.5 V 0 10 μs VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL VDD 0V 10% (b) VIN 2.5 V 90% (c) VOUT VDD 10% 90% tr ton toff tf VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6N16FE (Q1, Q2 common) ID – VDS 250 2.5 200 43 10 2.3 2.1 1.9 150 Common source Ta = 25°C 100 Ta = 100°C 10 25°C 1 1000 Common source VDS = 3 V ID – VGS (mA) Drain current ID Drain current ID (mA) 100 1.7 −25°C 50 1.5 VGS = 1.3 V 0.1 0 0 0.5 1 1.5 2 0.01 0 1 2 3 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 12 Common source Ta = 25°C 10 5 6 RDS (ON) – VGS Common source ID = 10 mA Drain-Source on resistance RDS (ON) (Ω) 8 VGS = 1.5 V Drain-Source on resistance RDS (ON) (Ω) 4 6 3 Ta = 100°C 25°C 1 −25°C 4 2.5 V 2 4V 0 1 10 100 1000 2 0 0 2 4 6 8 10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) – Ta 8 Common source 2 Common source ID = 0.1 mA VDS = 3 V Vth – Ta Vth (V) Gate threshold voltage 125 150 4 V, 10 mA 100 Drain-Source on resistance RDS (ON) (Ω) 1.6 6 VGS = 1.5 V, ID = 1 mA 1.2 4 2.5 V, 10 mA 2 0.8 0.4 0 −25 0 25 50 75 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2007-11-01 SSM6N16FE (Q1, Q2 common) ⎪Yfs⎪ – ID 500 300 Common source VDS = 3 V Ta = 25°C 100 50 30 250 Common source VGS = 0 V Ta = 25°C D 150 IDR S 100 IDR – VDS Drain reverse current IDR (mA) Forward transfer admittance ⎪Yfs⎪ (mS) 200 G 10 5 3 50 1 1 10 100 1000 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain current ID (mA) Drain-Source voltage VDS (V) C – VDS 100 50 30 5000 3000 toff t – ID Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C Switching time t (ns) (pF) 1000 500 300 tf Capacitance C 10 5 3 Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25°C 0.3 0.1 0.3 0.5 1 3 5 10 30 50 100 Crss Ciss Coss 100 ton 50 30 tr Drain-Source voltage VDS (V) 10 0.1 1 10 100 Drain current ID (mA) PD* – Ta 250 Drain power dissipation PD* (mW) 200 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t 2 Cu Pad: 0.135 mm × 6) *: Total Rating 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM6N16FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01