SSM6N17FU

SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Analog Switch Applications • • • Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Unit: mm (Q1, Q2 Common) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD(Note 1) Tch Tstg Rating 50 ±7 100 200 200 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating,Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Note: JEDEC JEITA TOSHIBA ― SC-70 (6pin) 2-2J1C Weight: 6.8 mg (typ.) 0.4 mm 0.8 mm Marking 6 5 4 Equivalent Circuit 6 5 4 DM 1 2 3 1 Q1 Q2 2 3 This transistor is a electrostatic sensitive device. Please handle with caution. 1 2007-11-01 SSM6N17FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff VDD = 3 V, ID = 20 mA, VGS = 0~3 V, RG = 10 Ω, RL = 150 Ω VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±7 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 50 V, VGS = 0 VDS = 3 V, ID = 1 μA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V Min ― 50 ― 0.9 20 ― ― ― ― ― ― ― Typ. ― ― ― ― 40 12 22 7 3 7 100 40 Max ±5 ― 1 1.5 ― 20 40 ― ― ― ― ― Unit μA V μA V mS Ω pF pF pF ns Switching Time Test Circuit (a) Test circuit 3V 0 1 μs VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common source Ta = 25°C OUT IN 50 Ω 10 Ω RL 0V 10% (b) VIN 3V 90% VDD (c) VOUT VDD 10% 90% tr ton toff tf VDS (ON) 2 2007-11-01 SSM6N17FU (Q1, Q2 Common) ID – VDS 100 Common source Ta = 25°C 80 5 4.5 4 60 1000 Common source 100 VDS = 3 V ID – VGS (mA) (mA) Drain current ID 10 Drain current ID 1 Ta = 150°C 40 0.1 75°C 0.01 25°C −25°C 20 VGS = 2.5 V 0 0 0.4 0.8 1.2 1.6 2 0.001 0 1 2 3 4 5 6 7 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 100 Common source 50 Ta = 25°C 40 Common source ID = 10 mA RDS (ON) – Ta Drain-Source on resistance RDS (ON) (Ω) 30 Drain-Source on resistance RDS (ON) (Ω) VGS = 2.5 V 4V 30 VGS = 2.5 V 10 5 3 20 4V 10 1 0.5 1 3 5 10 30 50 100 0 −50 0 50 100 150 Drain current ID (mA) Ambient temperature Ta (°C) RDS (ON) – VGS 40 Common source Ta = 25°C 30 500 Common source 300 VDS = 3 V Ta = 25°C ⎪Yfs⎪ – ID Forward transfer admittance ⎪Yfs⎪ (mS) Drain-Source on resistance RDS (ON) (Ω) 100 20 50 30 100 mA 10 ID = 10 mA 0 0 2 4 6 8 10 10 1 3 5 10 30 50 100 Gate-Source voltage VGS (V) Drain current ID (mA) 3 2007-11-01 SSM6N17FU (Q1, Q2 Common) Vth – Ta 2 Common source VDS = 3 V ID = 1 μ A 50 30 Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 C – VDS Vth (V) 1.6 Gate threshold voltage Capacitance C 1.2 (pF) 0.8 5 3 Ciss Coss 0.4 1 1 0 50 100 150 Crss 0 −50 3 5 10 30 50 100 Drain-Source voltage Ambient temperature Ta (°C) VDS (V) t – ID 1000 Common source 300 VGS = 0~3 V ton 100 50 30 tr toff tf 10 5 3 1 3 5 10 30 50 100 300 500 1000 RG = 10 Ω Ta = 25°C 500 VDD = 3 V −250 Common source VGS = 0 V −200 Ta = 25°C D −150 G IDR – VDS Drain reverse current IDR (mA) Switching time t (ns) −100 S −50 Drain current ID (mA) 0 0 −0.4 −0.8 −1.2 −1.6 −2 Drain-Source voltage VDS (V) PD* – Ta 250 (mW) 200 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Drain power dissipation PD* 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) *: Total rating 4 2007-11-01 SSM6N17FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01