SSM6N36TU,LF

SSM6N36TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36TU ○ High-Speed Switching Applications Unit: mm • 1.5-V drive 2.1±0.1 • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) 1.7±0.1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V ID 500 DC Drain current Pulse 2 5 3 4 mA 1.Source1 4.Source2 2.Gate1 3.Drain2 5.Gate2 IDP 1000 PD (Note 1) 500 mW UF6 Channel temperature Tch 150 °C JEDEC ― Storage temperature Tstg −55 to 150 °C JEITA ― Drain power dissipation +0.1 0.3-0.05 6 0.7±0.05 : Ron = 0.63 Ω (max) (@VGS = 5.0 V) 1 0.166±0.05 : Ron = 0.66 Ω (max) (@VGS = 4.5 V) 1.3±0.1 2.0±0.1 : Ron = 0.85 Ω (max) (@VGS = 2.5 V) 0.65 0.65 : Ron = 1.14 Ω (max) (@VGS = 1.8 V) 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-2T1B temperature/current/voltage and the significant change in Weight: 7.0 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 NX 1 2 5 4 Q1 Q2 3 1 2 3 Start of commercial production 2008-02 1 2014-03-01 SSM6N36TU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Drain-source breakdown voltage Test Condition Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = - 10 V 12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS =20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = 3 V, ID = 1 mA 0.35 ⎯ 1.0 V Forward transfer admittance |Yfs| VDS = 3 V, ID = 200 mA (Note2) 420 840 ⎯ mS ID = 200 mA, VGS = 5.0 V (Note2) ⎯ 0.46 0.63 ID = 200 mA, VGS = 4.5 V (Note2) ⎯ 0.51 0.66 ID = 200 mA, VGS = 2.5 V (Note2) ⎯ 0.66 0.85 ID = 100 mA, VGS = 1.8 V (Note2) ⎯ 0.81 1.14 ID = 50 mA, VGS = 1.5 V (Note2) ⎯ 0.95 1.52 ⎯ 46 ⎯ ⎯ 10.8 ⎯ Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss ⎯ 7.3 ⎯ Total Gate Charge Qg ⎯ 1.23 ⎯ Gate−Source Charge Qgs ⎯ 0.60 ⎯ Gate−Drain Charge Qgd ⎯ 0.63 ⎯ Turn-on time Switching time Turn-off time Drain-source forward voltage VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10V, ID = 0.5 A, VGS = 4.0 V ton VDD = 10 V, ID = 200 mA ⎯ 30 ⎯ toff VGS = 0 to 2.5 V, RG = 50 Ω ⎯ 75 ⎯ ID = -0.5 A, VGS = 0 V ⎯ -0.88 -1.2 VDSF (Note2) Ω pF nC ns V Note2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit 2.5 V OUT 10 μs RG IN 0 (b) VIN VDD = 10 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C 2.5 V 0V (c) VOUT VDD 90% 10% VDD 90% 10% VDS (ON) tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6N36TU). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 SSM6N36TU ID – VDS ID – VGS 10 V 1000 2.5 V 1.8 V (mA) 4.5 V 800 100 ID Ta = 100 °C 600 1.5 V Drain current Drain current ID (mA) 1000 400 VGS = 1.2 V 200 0 Common Source Ta = 25 °C 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 10 1 − 25 °C 25 °C 0.1 Common Source VDS = 3 V 0.01 0 1.0 1.0 (V) Gate-source voltage RDS (ON) – VGS Common Source Common Source Ta = 25°C Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) ID =200 mA 25 °C 1 Ta = 100 °C − 25 °C 0 4 2 6 Gate-source voltage (V) 8 VGS 2 1.8 V 1.5 V 1 VGS = 4.5V 2.5V 0 10 0 (V) 600 400 200 Drain current RDS (ON) – Ta ID 1.0 100 m A / 1.8 V Gate threshold voltage 200 m A / 2.5 V 200 m A / 4.5 V 200 m A / 5.0 V 0.5 0 −50 0 50 Ambient temperature 1000 (mA) 100 Ta Common Source Vth (V) ID = 50 m A / VGS = 1.5 V Common Source 800 Vth – Ta 1.5 Drain-source ON-resistance RDS (ON) (Ω) VGS 3 2 1.0 3.0 RDS (ON) – ID 3 0 2.0 VDS = 3 V ID = 1 mA 0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2014-03-01 |Yfs| – ID 10000 IDR – VDS 1000 Common Source (mA) VDS = 3 V 3000 IDR Ta = 25°C 1000 Drain reverse current Forward transfer admittance ⎪Yfs⎪ (mS) SSM6N36TU 300 100 30 10 100 10 1 Drain current ID 100 25 °C 10 D 1 −25 °C S –0.5 (mA) –1.0 Drain-source voltage C – VDS VDS (ns) tf 10 Coss Crss 5 3 Switching time Capacitance C t (pF) Ciss 30 (V) Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω toff 50 –1.5 t – ID 1000 100 IDR G 0.1 0 1000 Common Source VGS = 0 V Ta =100 °C Common Source 100 ton Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 tr 1 10 Drain-source voltage VDS 10 100 (mW) P D* ID = 0.5 A Ta = 25°C Drain power dissipation Gate-source voltage VGS (V) Common Source 6 VDD = 16 V 4 2 0 0 1 Total Gate Charge 2 Qg 100 ID 1000 (mA) PD* – Ta 10 VDD = 10 V 10 Drain current Dynamic Input Characteristic 8 1 (V) 1000 800 (nC) t=10s 600 DC 400 200 0 -40 3 Mounted on a FR4 board. (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad: 645 mm ) -20 *: Total Rating 4 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 2014-03-01 SSM6N36TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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