SSM6N7002FU

SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications • • Small package Low ON resistance : Ron = 3.3 Ω (max) (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V) : Ron = 3.0 Ω (max) (@VGS = 10 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 60 ± 20 200 800 300 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm × 6) 0.4 mm 0.8 mm Note: 1.SOURCE1 4.SOURCE2 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1 JEDEC JEITA TOSHIBA ― ― 2-2J1C Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NC 1 2 3 1 Q1 Q2 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6N7002FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ (Q1, Q2 Common) Test Condition VGS = ± 20 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V Min ⎯ 60 ⎯ 1.0 170 ⎯ ⎯ ⎯ ⎯ VDS = 25 V, VGS = 0, f = 1 MHz ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 2.1 2.2 17 1.4 5.8 2.4 26 Max ± 10 ⎯ 1 2.5 ⎯ 3.0 3.2 3.3 ⎯ ⎯ pF pF pF ns Ω Unit μA V μA V mS Drain-Source ON resistance RDS (ON) ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Ciss Crss Coss td(on) td(off) VDD = 30V, ID = 200 mA, VGS = 0 ~ 10V ⎯ ⎯ ⎯ ⎯ 4.0 40 Switching Time Test Circuit (a) Test circuit 10V 0 IN 50 Ω 0V RL VDD OUT (b) VIN 10 V 90% 10% 10 μs VDD = 30 V Duty < 1% = VIN: tr, tf < 2 ns (Zout = 50 Ω) Common Source Ta = 25°C (c) VOUT VDD 10% 90% tr td(on) td(off) tf VDS (ON) Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID =250 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2007-11-01 SSM6N7002FU ID - VDS 1000 900 800 Drain current ID (mA) 700 600 500 400 300 200 100 0 0 0.5 1 1.5 2 Drain-Source voltage VDS (V) Common Source Ta=25°C 7 10 3.3 3.0 2.7 2.5 VGS=2.3V 5 4.5 4.0 ID - VGS 1000 100 Drain current ID (mA) Common Source VDS=10V 10 1 0.1 0.01 0 Ta=100°C 25°C -25°C 1 2 3 4 5 Gate-Source voltage VGS (V) RDS(ON) - ID RDS(ON) - VGS Drain-Source on resistance RDS(ON) (Ω) 4 Common Source Ta=25°C Drain-Source on resistance RDS(ON) (Ω) 5 5 Common Source ID=100mA Ta=100°C 3 25°C 4 3 VGS=4.5V 2 5.0V 2 10V 1 1 -25°C 0 10 100 Drain current ID (mA) 1000 0 0 2 4 6 8 Gate-Source voltage VGS (V) 10 RDS(ON) - Ta 5 2 Common Source 4 VGS=4.5V,ID=100mA 3 10V,500mA 5.0V,100mA Gate threshold voltage Vth(V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) 150 0 -25 0 Vth - Ta Common Source ID=0.25mA VDS=10V Drain-Source on resistance RDS(ON) (Ω) 2 1 25 50 75 100 125 Ambient temperature Ta (°C) 150 3 2007-11-01 SSM6N7002FU |Yfs| - ID 1000 Drain reverse current IDR (mA) 1000 900 800 700 600 500 400 300 200 100 0 10 100 Drain current ID (mA) 1000 0 S G IDR - VDS Common Source VGS=0V Ta=25°C D Forward transfer admittance |Yfs| (mS) IDR 100 Common source VDS=10V Ta=25°C 10 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain-Source voltage VDS (V) C - VDS 100 Common Source VGS=0V f=1MHz Ta=25°C 10000 t - ID Common Source VDD=30V VGS=0~10V Ta=25°C 10 Coss Ciss Switching time t (ns) Capacitance C (pF) 1000 tf 100 td(off) 10 td(on) 1 Crss 1 0.1 1 10 Drain-Source voltage VDS (V) 100 tr 1 10 100 Drain current ID (mA) 1000 PD* - Ta 400 Drain power dissipation PD* (mW) 350 300 250 200 150 100 50 0 0 20 mounted on FR4 board （25.4mm×25.4mm×1.6t Cu Pad：0.32mm2×6） * :Total rating 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2007-11-01 SSM6N7002FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01