SSM6P15FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P15FE
High Speed Switching Applications
Analog Switch Applications
•
Small package
•
Low ON resistance
Unit: mm
: Ron = 12 Ω (max) (@VGS = −4 V)
: Ron = 32 Ω (max) (@VGS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain-Source voltage
Rating
Unit
VDS
−30
V
V
VGSS
±20
DC
ID
−100
Pulse
IDP
−200
Gate-Source voltage
Drain current
Symbol
Drain power dissipation (Ta = 25°C)
PD (Note 1)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm t, Cu Pad: 0.135 mm2 × 6)
Marking
6
JEITA
―
TOSHIBA
2-2N1D
Weight: 0.003g(typ.)
Equivalent Circuit (top view)
5
4
6
2
5
4
Q1
DQ
1
―
0.45 mm
0.3 mm
JEDEC
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected
against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct
contact with devices should be made of anti-static materials.
Start of commercial production
2002-03
© 2022
Toshiba Electronic Devices & Storage Corporation
1
2022-02-24
SSM6P15FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Symbol
MIN.
TYP.
MAX.
UNIT
IGSS
VGS = ±16 V, VDS = 0 V
±1
µA
V (BR) DSS
ID = −0.1 mA, VGS = 0 V
−30
V
IDSS
VDS = −30 V, VGS = 0 V
−1
µA
Gate leakage current
Drain-Source breakdown voltage
Test Condition
Drain cut-off current
Vth
VDS = −3 V, ID = −0.1 mA
−1.1
−1.7
V
Forward transfer admittance
Yfs
VDS = −3 V, ID = −10 mA
20
mS
8
12
RDS (ON)
ID = −10 mA, VGS = −4 V
Drain-Source ON resistance
ID = −1 mA, VGS = −2.5 V
14
32
9.1
pF
VDS = −3 V, VGS = 0 V, f = 1 MHz
3.5
pF
8.6
pF
VDD = −5 V, ID = −10 mA,
VGS = 0 V to −5 V
ns
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Turn-on time
ton
Turn-off time
toff
Switching time
65
175
Ω
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
10%
IN
50 Ω
−5V
10 µs
VDD
90%
−5 V
RL
(c) VOUT
VDD = −5 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 µA for this product.
For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth.
(Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
© 2022
Toshiba Electronic Devices & Storage Corporation
2
2022-02-24
SSM6P15FE
Characteristics Curves
ID - VGS
ID - VDS
-250
-1000
Common Source
Ta=25°C
-7
Common Source
VDS=-3V
-5
-100
-4
Drain Current ID(mA)
Drain Current ID(mA)
-200
-10
-150
-3.3
-100
-3.0
-2.7
-2.5
-50
Ta=100°C
-10
25°C
-1
-25°C
-0.1
VGS=-2.3V
0
-0.01
-2
-1.5
-1
-0.5
Drain-Source Voltage VDS(V)
0
RDS(ON) - VGS
Drain-Source on resistance RDS(ON) (Ω)
Drain-Source on resistance RDS(ON) (Ω)
RDS(ON) - ID
40
Common Source
Ta=25°C
30
20
VGS=-2.5V
10
-4V
0
-1
-10
-100
Drain Current ID(mA)
-1000
20
18
Source Common
ID= -1mA
16
14
12
Ta=100°C
10
25°
8
6
4
2
-25°C
0
-8
-2
-4
-6
Gate-Source Voltage VGS (V)
0
RDS(ON) - Ta
-10
Vth - Ta
30
-2
Common Source
20
Gate
threshold
th (V)
Gate
thresholdvoltage
valtage V
Vth(V)
Drain-Source on resistance RDS(ON) (Ω)
-5
-3
-4
-2
-1
Gate-Source Voltage VGS(V)
0
VGS=-2.5V,ID=-1mA
10
-4V,-10mA
0
Common Source
ID=-0.1mA
VDS=-3V
-1.8
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25
0
25
50
75
100
125
150
-25
Ambient temperature Ta(°C)
© 2022
Toshiba Electronic Devices & Storage Corporation
0
25
50
75
100
125
150
Ambient temperature Ta(°C)
3
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SSM6P15FE
PD* - Ta
250
Drain power dissipation Pd* (mW)
FR4 board
mounted
FR4
(25.4 mm ×on
25.4
mmboard
×1.6 mm t,
(25.4mm×25.4mm×1.6t
2
Cu Pad: 0.135 mm
× 6)
2
Cu Pad:0.135mm ×5)
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Ambient temperature Ta(°C)
*: Total Rating
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2022
Toshiba Electronic Devices & Storage Corporation
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2022-02-24
SSM6P15FE
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's
written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for
complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to
property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the
Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information,
including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and
conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product
will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited
to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the
applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any
other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY
CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation,
equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment,
equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or
explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE,
TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR
PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER,
INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING
WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2)
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INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE,
ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
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the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass
destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations
including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export
and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and
regulations.
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use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including
without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT
OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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Toshiba Electronic Devices & Storage Corporation
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