SSM6P15FU,LF

SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse IDP −200 PD (Note 1) 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current Drain power dissipation (Ta = 25°C) mA 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2J1C operating temperature/current/voltage, etc.) are within the Weight: 0.0068g(typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating. Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 Q1 DQ 1 5 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2002-03 1 2014-03-01 SSM6P15FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristic Symbol MIN. TYP. MAX. UNIT IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA V (BR) DSS ID = −0.1 mA, VGS = 0 −30 ⎯ ⎯ V IDSS VDS = −30 V, VGS = 0 ⎯ ⎯ −1 μA Gate leakage current Drain-Source breakdown voltage Test Condition Drain cut-off current Vth VDS = −3 V, ID = −0.1 mA −1.1 ⎯ −1.7 V Forward transfer admittance ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 20 ⎯ ⎯ mS Drain-Source ON resistance RDS (ON) ID = −10 mA, VGS = −4 V ⎯ 8 12 ID = −1 mA, VGS = −2.5 V ⎯ 14 32 ⎯ 9.1 ⎯ pF ⎯ 3.5 ⎯ pF ⎯ 8.6 ⎯ pF Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time Turn-on time Turn-off time VDS = −3 V, VGS = 0, f = 1 MHz ton VDD = −5 V, ID = −10 mA, ⎯ 65 ⎯ toff VGS = 0 to −5 V ⎯ 175 ⎯ Ω ns Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN 50 Ω −5V 10 μs VDD 90% −5 V RL (c) VOUT VDD = −5 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2014-03-01 SSM6P15FU ID - VGS ID - VDS -250 -1000 -7 -5 -150 -3.3 -100 -3.0 -2.7 -2.5 -50 Drain-Source on resistance RDS(ON) (Ω) 0 -0.5 -1 -1.5 Drain-Source Voltage VDS(V) Ta=100°C -10 25°C -1 -0.01 -2 0 Common Source Ta=25°C 30 20 VGS=-2.5V 10 -4V 0 -1 -1 -2 -3 -4 Gate-Source Voltage VGS(V) -10 -100 Drain Current ID(mA) -1000 20 18 Source Common ID= -1mA 16 14 12 Ta=100°C 10 25° 8 6 4 2 -25°C 0 0 -2 -4 -6 -8 Gate-Source Voltage VGS (V) RDS(ON) - Ta -10 Vth - Ta 30 -2 Common Source 20 Common Source ID=-0.1mA VDS=-3V -1.8 Gate threshold valtage Vth(V) Drain-Source on resistance RDS(ON) (Ω) -5 RDS(ON) - VGS RDS(ON) - ID 40 -25°C -0.1 VGS=-2.3V 0 Common Source VDS=-3V -100 -4 Drain-Source on resistance RDS(ON) (Ω) Drain Current ID(mA) -200 -10 Drain Current ID(mA) Common Source Ta=25°C VGS=-2.5V,ID=-1mA 10 -4V,-10mA -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 0 150 -25 Ambient temperature Ta(°C) 0 25 50 75 100 125 150 Ambient temperature Ta(°C) 3 2014-03-01 SSM6P15FU |Yfs| - ID IDR - VDS -250 Common Source VDS= -3V Ta=25°C Drain reveres current IDR (mA) Forword transfer admittance |Yfs| (mS) 1000 100 10 1 -200 -150 -100 -50 0 -1 -10 -100 Drain current ID (mA) -1000 0 C - VDS 0.2 0.4 0.6 0.8 1 1.2 Drain-Source voltage VDS (V) Switching Time　t (ns) Common Source VGS=0V f=1MHz Ta=25°C 10 Ciss Coss toff 1000 100 1.4 t - ID 10000 100 Capacitance C (pF) Common Source VGS=0V Ta=25°C Common Source VDD= -5V VGS=0~-5V Ta=25°C tf ton tr Crss 1 -0.1 -1 -10 Drain-Source voltage VDS (V) -100 10 -0.1 -1 -10 Drain Current ID (mA) -100 PD* - Ta Drain power dissipation Pd* (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 Ambient temperature Ta(°C) 140 160 *: Total Rating 4 2014-03-01 SSM6P15FU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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