SSM6P41FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
SSM6P41FE
○ Power Management Switches
: RDS(ON) = 1.04 Ω (max) (@VGS = -1.5 V)
: RDS(ON) = 0.67 Ω (max) (@VGS = -1.8 V)
: RDS(ON) = 0.44 Ω (max) (@VGS = -2.5 V)
: RDS(ON) = 0.30 Ω (max) (@VGS = -4.5 V)
Unit: mm
1.6±0.05
Symbol
Rating
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
-720
Pulse
IDP
-1440
Power dissipation
Unit
mA
PD (Note1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm × 6)
Marking
6
2
5
3
4
ES6
1.Source1
4.Source2
2.Gate1
5.Gate2
3.Drain2
6.Drain1
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3.0 mg (typ.)
Equivalent Circuit (top view)
5
4
6
PP3
1
6
0.12±0.05
Characteristic
1
0.55±0.05
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
1.0±0.05
0.5 0.5
1.2±0.05
0.2±0.05
1.5-V drive
Low on-resistance
1.6±0.05
•
•
2
5
4
Q1
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Start of commercial production
2009-04
1
2014-03-01
SSM6P41FE
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Drain-source breakdown voltage
Test Conditions
Min.
Typ.
Max.
V (BR) DSS
ID = -1 mA, VGS = 0 V
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = 8 V
-12
⎯
⎯
Unit
V
Drain cutoff current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -400 mA
(Note2)
850
⎯
⎯
mS
ID = -400 mA, VGS = -4.5 V
(Note2)
⎯
0.25
0.30
ID = -200 mA, VGS = -2.5 V
(Note2)
⎯
0.34
0.44
ID = -100 mA, VGS = -1.8 V
(Note2)
⎯
0.44
0.67
ID = -50 mA, VGS = -1.5 V
(Note2)
⎯
0.55
1.04
Drain-source on-resistance
RDS (ON)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total Gate Charge
Qg
Gate−Source Charge
Qgs
Gate−Drain Charge
Qgd
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDD = -10 V, ID= -720 mA
VGS = -4.5 V
⎯
110
⎯
⎯
28
⎯
⎯
20
⎯
⎯
1.76
⎯
⎯
1.22
⎯
⎯
0.54
⎯
ton
VDD = -10 V, ID = -100 mA
⎯
11
⎯
toff
VGS = 0 to -2.5 V, RG = 50 Ω
⎯
38
⎯
⎯
0.85
1.2
VDSF
ID = 720 mA, VGS = 0 V
(Note2)
Ω
pF
nC
ns
V
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
OUT
0
(b) VIN
0V
90%
IN
RG
−2.5V
10 μs
VDD
10%
−2.5 V
RL
(c) VOUT
VDD = −10 V
RG = 50 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1mA for the
SSM6P41FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
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2014-03-01
SSM6P41FE
ID – VDS
ID – VGS
-1.6
-1.2
-1.8 V
-2.5 V
Drain current ID (A)
-8 V -4.5 V
-10
Drain current ID (A)
-1.4
Common Source
Ta = 25 °C
Pulse test
-1.0
-1.5 V
-0.8
-0.6
-0.4
VGS=-1.2 V
Common Source
VDS = -3 V
Pulse test
-1
-0.1
Ta = 100 °C
25 °C
-0.01
− 25 °C
-0.001
-0.2
0
0
-0.2
-0.4
-0.8
-0.6
Drain-source voltage
-0.0001
0
-1.0
-1.0
VDS (V)
Gate-source voltage
RDS (ON) – VGS
1.4
1.0
0.8
0.6
25 °C
0.4
Common Source
Ta = 25°C
Pulse test
1.2
Drain-source on-resistance
RDS (ON) (Ω)
Drain-source on-resistance
RDS (ON) (Ω)
RDS (ON) – ID
1.4
ID = -100 mA
Common Source
Ta = 25°C
Pulse test
1.2
-2.0
VGS (V)
Ta = 100 °C
0.2
1.0
0.8
-1.5 V
0.6
-1.8 V
0.4
-2.5 V
0.2
VGS = -4.5 V
− 25 °C
0
0
0
-2
-4
-6
Gate-source voltage
-8
-500
0
VGS (V)
-1000
Vth – Ta
RDS (ON) – Ta
1.0
-1.0
Common Source
Common Source
Pulse test
VDS = -3 V
Vth (V)
-50 mA / -1.5 V
0.8
-100 mA / -1.8 V
0.6
-200 mA / -2.5 V
Gate threshold voltage
Drain-source on-resistance
RDS (ON) (Ω)
-1500
Drain current ID (mA)
0.4
ID = -400 mA / VGS = -4.5 V
0.2
0
−50
0
50
100
ID = -1 mA
-0.5
0
−50
150
Ambient temperature Ta (°C)
0
50
100
150
Ambient temperature Ta (°C)
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SSM6P41FE
|Yfs| – ID
IDR – VDS
10000
10000
Common Source
VGS = 0 V
Pulse test
Common Source
(mA)
VDS = -3 V
Pulse test
1000
100
10
1000
Drain reverse current IDR
Forward transfer admittance
⏐Yfs⏐ (mS)
Ta = 25°C
-1
-10
-100
-1000
D
IDR
G
100
S
Ta =100 °C
10
25 °C
1
−25 °C
0.1
0
-10000
Drain current ID (mA)
Switching time t (ns)
(pF)
Capacitance C
Ciss
Common Source
30
Ta = 25°C
f = 1 MHz
VGS = 0 V
-10
-100
(mW)
P D*
Power dissipation
VDD = - 10 V
VDD = - 16 V
-2
Total Gate Charge
Qg
-1000
-10000
PD* – Ta
250
Ta = 25°C
2
-100
Drain current ID (mA)
-6
1
-10
-1
VGS
(V)
ton
10
VDS (V)
ID = - 720 mA
Gate-source voltage
100
1
-1
Common Source
0
tf
tr
Dynamic Input Characteristic
0
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 50Ω
Crss
Drain-Source voltage
-4
1.2
VDS (V)
toff
Coss
10
-0.1
-8
1.0
Common Source
1000
300
0.8
t – ID
10000
100
0.6
Drain-source voltage
C – VDS
1000
0.4
0.2
200
150
100
50
0
-40
3
Mounted on FR4 board.
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6)
-20
(nC)
0
20
40
60
80
Ambient temperature
100 120
Ta
140 160
(°C)
*:Total Rating
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2014-03-01
SSM6P41FE
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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