SSM6P54TU

SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • • • 1.5 V drive Suitable for high-density mounting due to compact package Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V) : Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V) Unit : mm 2.1±0.1 1.7±0.1 0.65 0.65 +0.1 0.3-0.05 V μA μA V S mΩ ns V 2.0±0.1 1.3±0.1 1 2 3 6 5 4 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD(Note 1) Tch Tstg Rating -20 ±8 -1.2 -2.4 500 150 −55 ~ 150 Unit V A mW °C °C V 0.7±0.05 1.Sorce1 2.Gate1 3.Drain2 4.Source 2 5.Gate2 6.Drain1 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Note: UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Total gate charge Gate-Source charge Gate-Drain charge Drain-Source forward voltage Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth |Yfs| RDS (ON) Ciss Coss Crss ton toff Qg Qgs Qgd VDSF Test Condition ID = −1 mA, VGS = 0 ID = −1 mA, VGS = +8 V VDS = −20 V, VGS = 0 VGS = ± 8 V, VDS = 0 VDS = −3 V, ID = −1 mA VDS = -3 V, ID = -0.6 A ID = -0.6 A, VGS = -2.5 V ID = -0.6 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V VDS = −10 V, VGS = 0 f = 1 MHz VDD = −10 V, ID = −0.6 A VGS = 0 ~ −2.5 V, RG = 4.7 Ω VDS = −16 V, IDS = -1.2 A, VGS = − 4 V ID = 1.2 A, VGS = 0 (Note 2) (Note 2) (Note 2) (Note 2) (Note 2) Min −20 −12 ⎯ ⎯ −0.3 1.7 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 3.4 162 212 249 331 48 39 19 18 7.7 4.9 2.8 0.8 Max ⎯ ⎯ −10 ±1 −1.0 ⎯ 228 350 555 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 nC pF Unit Note 2: Pulse test 1 2007-11-01 +0.06 0.16-0.05 SSM6P54TU Switching Time Test Circuit (a) Test Circuit OUT IN −2.5 V RG RL VDD 90% (b) VIN 0V 10% 0 −2.5V 10 μs VDS (ON) (c) VOUT VDD ton tr 90% 10% tf toff VDD = -10 V RG = 4.7 Ω D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25 °C Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 PJ 1 2 3 Q1 Q2 1 2 3 Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM6P54TU -2.5 -4 V ID – VDS -10000 -1.8 V -2.5 V -1.5 V -1000 Common Source VDS = -3 V ID – VGS (A) (mA) ID -2 ID -100 Ta = 85 °C -10 25 °C -1 −25 °C -1.5 Drain current -1 VGS = -1.2 V -0.5 Common Source Ta = 25 °C 0 -0.5 -1 -1.5 -2 Drain current -0.1 0 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Drain - Source voltage VDS (V) Gate - Source voltage VGS (V) RDS (ON) – VGS 450 400 ID = -0.1 A 450 400 Common Source RDS (ON) – VGS ID = -0.6 A Common Source Drain – Source on-resistance RDS (ON) (mΩ) 350 300 250 200 150 100 50 0 0 -2 -4 −25 °C Ta = 85 °C 25 °C Drain – Source on-resistance RDS (ON) (mΩ) 350 300 250 200 Ta = 85 °C 150 100 50 0 −25 °C 25 °C -6 -8 0 -2 -4 -6 -8 Gate - Source voltage VGS (V) Gate - Source voltage VGS (V) RDS (ON) – ID 450 Common Source 400 Ta = 25 °C 500 Common Source RDS (ON) – Ta ID = -0.1 A / VGS = -1.5 V Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) 350 300 250 200 150 100 50 0 VGS = -1.5 V 400 300 -0.6 A / -1.8 V -1.8 V -2.5 V 200 -0.6 A / -2.5 V 100 0 -0.5 -1 -1.5 -2 -2.5 0 −50 0 50 100 150 Drain current ID (A) Ambient temperature Ta (°C) 3 2007-11-01 SSM6P54TU Vth – Ta Common Source |Yfs| – ID (S) 30 Common Source 10 3 1 0.3 0.1 VDS = -3 V Ta = 25 °C VDS = -3 V ID = -1 mA -0.8 Vth (V) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 −25 0 25 50 75 Forward transfer admittance Gate threshold voltage ⎪Yfs⎪ -0.7 0.03 0.01 1 100 125 150 -10 -100 -1000 -10000 Ambient temperature Ta (°C) Drain current ID (mA) 5000 3000 C – VDS -10 Dynamic Input Characteristic (V) (pF) C 500 300 Ciss -8 VGS 1000 Gate-Source voltage -6 VDD = -16 V Capacitance 100 50 30 Common Source Ta = 25 °C f = 1 MHz VGS = 0 V -1 -10 Coss Crss -4 -2 10 -0.1 Common Source ID = -1.2 A Ta = 25 °C 0 5 10 15 20 -100 0 Drain – Source voltage VDS (V) Total gate charge Qg (nC) t – ID 1000 Common Source VDD = -10 V VGS = 0 ∼ -2.5 V Ta = 25 °C RG = 4.7 Ω -2 Common Source VGS = 0 V Ta = 25 °C -1.5 IDR – VDS (A) (ns) toff 100 tf D IDR S t IDR Drain reverse current Switching time G -1 ton 10 tr -0.5 1 0.01 0 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 Drain current ID (A) Drain-Source voltage VDS (V) 4 2007-11-01 SSM6P54TU rth – tw rth (°C /W) 1000 Single Pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 1.2 Mounted on FR4 board PD * (W) 1 t = 10s 0.8 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) * Total Rating Drain power dissipation 0.6 DC 0.4 0.2 0 0 50 100 150 Ambient temperature Ta (°C) 5 2007-11-01 SSM6P54TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01