TA2151FN

TA2151FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2151FN RF Amplifier for Digital Servo CD System TA2151FN is a 3-beam type PUH compatible RF Amplifier for Digital Servo to be used in the CD system. In combination with a CMOS single chip processor TC9462F/TC9495F, a CD system can be composed very simply. Features · · · · · · · · · · Built-in amplifier for reference (VRO, 2VRO) supply. Built-in Auto Laser Power Control circuit. Built-in RF amplifier. Built-in AGC amplifier. Built-in focus error amp and tracking error amp. Built-in gain change circuit for CD-RW. Capable of tracking balance control with TC9462F/TC9495F. Built-in signal amplifier for track counter. Capable of 4 times speed operation. 30 pin mini flat package. Weight: 0.17 g (typ.) 1 2003-01-16 TA2151FN Block Diagram 150 k9 0.5 pF 40 pF BOTTOM DETECTION 20 k9 20 k9 15 RFDC 3 pF 10 k9 10 k9 30 k9 14 TEO 30 k9 10 pF 13 TEN 12 2VRO 21.82 k9 48 k9 3 STATE DET. 83 k9 2.9 k9 1 k9 9 LDO 1.4 k9 189 k9 13 k9 2.26 k9 11 TEB 10 SEL 8 MDI I-I 189 k9 15 pF 60 k9 I-I 6 TPI 7 TNI 3 k9 60 k9 5 FPI 3 k9 4 FNI 3 VRIN 2 RFGC 1 VCC Bottom Detect ON 20 k9 3 pF SEB GND HiZ VCC OFF ON FEO 16 10 pF 60 k9 40 pF 150 k9 56.4 k9 56.4 k9 FEN 17 SEB 18 VRO 19 20 k9 RFRP 20 20 k9 20 k9 20 k9 12 k9 12 k9 BTC 21 11 k9 100 9 100 k9 100 k9 RFCT 22 PKC 23 11 k9 RFRPIN 24 BOTTOM PEAK 15 pF RFGO 25 GVSW 26 20 k9 LDC AGCIN 27 AGC Amp. RFO 28 GND 29 12.8 k9 RFN2 30 12.8 k9 SEL SW1 GND HiZ OFF VCC ON ON ON SW2 OFF SW3 OFF RFRP Detect Frequency Low High GVSW GND HiZ VCC Mode CD-RW Normal Peak Detect 2 2003-01-16 TA2151FN Pin Function Pin No. 1 Symbol VCC I/O ¾ Functional Description Power supply input terminal. RF amplitude adjustment control signal input terminal. Controlled by 3-PWM signals. (PWM carrier = 88.2 kHz) RFGC input voltage: VRO ± 1.5 V AGC amplifier voltage again: ´0.7~1.5 (typ.) AGC amp. Reference voltage input terminal. Main beam I-V amp input terminal. Remarks ¾ 2 RFGC I ¾ 3 4 VRIN FNI I I Connected to VRO Connected to pin diode output B + D (through resistor). Connected to pin diode output A + C (through resistor). Connected to pin diode output F. Connected to pin diode output E. Connected to monitor photo diode. Connected to laser diode control circuit. 5 FPI I Main beam I-V amp input terminal. 6 7 8 9 TPI TNI MDI LDO I I I O Sub beam I-V amp input terminal. Sub beam I-V amp input terminal. Monitor photo diode amp input terminal. Laser diode amp input terminal. Laser diode control signal input terminal and APC circuit ON/OFF control signal terminal. SEL Level APC Circuit OFF LDO Connected to VCC through resister (1 kW) Control signal output High Detect Frequency 10 SEL I GND HiZ Low 3 signals input. (VCC, HiZ, GND) ON VCC 11 TEB I Tracking error balance adjustment signal input terminal. Controlled by 3-PWM signal. (PWM carrier = 88.2 kHz) Reference voltage (2VRO) output terminal. 2VRO = 4.2 V when VCC = 5 V TE amp negative input terminal. TE error signal output terminal. RF signal peak detect output terminal. Focus error signal output terminal. FE amp negative input terminal. RFRP output circuit switching terminal. Bottom Detection ON OFF Peak Detection ON 3 signals input. (2VRO, VRO, GND) ¾ Connected to TEO through feedback resistor. ¾ ¾ ¾ Connected to FEO through feedback resistor. 12 13 14 15 16 17 2VRO TEN TEO RFDC FEO FEN O I O O O I SEB Level 18 SEB I GND VCC Low (GND) is for normal use. Reference voltage (VRO) output terminal. 19 VRO O VRO = 2.1 V when VCC = 5 V ¾ 3 2003-01-16 TA2151FN Pin No. 20 21 22 23 24 25 Symbol RFRP BTC RFCT PKC RFRPIN RFGO I/O O I O I I O Functional Description Track count signal output terminal. Time constant adjustment terminal for bottom detection. RFRP signal center level output terminal. Time constant adjustment terminal for peak detection. Input terminal for track count signal output amp. Output terminal for RF signal amplitude adjustment amp. Amp (FE, TE) gain switching terminal. Remarks ¾ Adjusted by capacitance. ¾ Adjusted by capacitance. ¾ ¾ GVSW 26 GVSW I GND HiZ Mode CD-RW Normal Low (GND) is for 5 times gain. VCC Connected to RFO through capacitance. ¾ ¾ ¾ 27 28 29 30 AGCIN RFO GND RFN2 I O ¾ I Input terminal for RF signal amplitude adjustment amp. Output terminal for RF signal amp. Ground terminal. Input terminal for RF signal amp. Maximum Ratings (Ta = 25°C) Characteristics Power supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC PD Topr Tstg Rating 8 500 -40~85 -55~150 Unit V mW °C °C 4 2003-01-16 TA2151FN Electrical Characteristics Characteristics Assured power supply voltage Power supply Power supply current 1 (normal mode) Power supply current 2 (CD-RW mode) Reference voltage Reference voltage Output current (2VRO) Input current Reference voltage Reference Reference voltage limit voltage Output current (VRO) Input current Transfer resistance1 (normal mode) Transfer resistance2 (CD-RW mode) Frequency band width1 (normal mode) Frequency band width2 (CD-RW mode) RF1 Output slew rate Output offset voltage 1 (normal mode) Output offset voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Lower limit voltage gain Upper limit voltage gain Frequency band width Output slew rate RF2 (AGC) Output offset voltage Upper limit output voltage Lower limit output voltage Permissive load resistance Voltage gain Operation ref. Voltage APC LD off voltage Input bias current (unless otherwise specified, VCC = 5 V, Ta = 25°C, RFGC = VCC, GVSW = VCC) Symbol VCC ICC1 ¾ ICC2 2VR IOH2 IOL2 VR DVR IOH1 IOL1 RT1 ¾ RT2 fc1 ¾ fc2 SR VOS1 ¾ VOS2 VOH VOL RLM GVL GVH fc SR VOS VOH VOL RLM Gv VMDI VLDOP II ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ f = 1 kHz VLDO = 3.5 VDC SEL = GND, VCC Reference MDI = 178 mV f = 100 kHz -3dB point CRFO = 20 pF VR Reference, Input: Open GND Reference ¾ ¾ ¾ ¾ ¾ ¾ ¾ DV = -0.2 V DV = +0.1 V ¾ 2 ´ VR/2VR - 1 DV = -0.2 V DV = +0.1 V f = 100 kHz Rf = 20 kW GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND Test Circuit ¾ Test Condition ¾ GVSW = VCC 23 GVSW = GVD ¾ 4.0 2.0 0.1 2.0 -3.0 5.0 5.0 153 690 ¾ ¾ ¾ GVSW = VCC GVSW = GND ¾ ¾ 3.8 GND Reference ¾ RFGC = 0.6 V RFGC = 3.6 V ¾ 10 0.6 1.3 ¾ ¾ ¾ 3.8 ¾ 10 ¾ 170 -0.7 -200 4.2 ¾ ¾ 2.1 0.0 ¾ ¾ 180 812 8 8 20 -50 -100 ¾ ¾ ¾ 0.7 1.5 20 20 100 ¾ ¾ ¾ 200 178 ¾ ¾ 4.4 ¾ ¾ 2.2 ¾ ¾ ¾ 207 kW 934 ¾ MHz ¾ ¾ ¾ mV ¾ ¾ 0.9 ¾ 0.8 V/V 1.7 ¾ ¾ ¾ ¾ 0.9 ¾ ¾ 192 ¾ 200 kW V/V mV V nA MHz V / ms mV V kW V V / ms V mA V % mA 33 43 mA Min 4.5 Typ. 5.0 Max 5.5 Unit V SEL = HiZ REGC = HiZ -3dB point Rf = 20 kW CRFO = 20 pF VR Reference Rf = 20 kW Input: Open 5 2003-01-16 TA2151FN Characteristics Transfer resistance 1 (normal mode) Transfer resistance 2 (CD-RW mode) Gain balance 1 (normal mode) Gain balance 2 (CD-RW mode) Frequency band width1 (normal mode) FE Frequency band width2 (CD-RW mode) Output offset voltage 1 (normal mode) Output offset voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Transfer resistance 1 (normal mode) Transfer resistance 2 (CD-RW mode) max voltage Voltage ratio gain adjustable min voltage range ratio Gain balance 1 (normal mode) Gain balance 2 (CD-RW mode) TE Frequency band width1 (normal mode) Frequency band width2 (CD-RW mode) Output offset voltage 1 (normal mode) Output offset voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Detection frequency RFDC FNI (FPI) ® RFDC Upper limit output voltage Lower limit output voltage Permissive load resistance Symbol RT1 ¾ RT2 GB1 ¾ GB2 fc1 ¾ fc2 VOS1 ¾ VOS2 VOH VOL RLM RT1 ¾ RT2 ¾ ¾ f = 1 kHz RNF = 75 kW TEB = HiZ GND Reference ¾ GVSW = VCC GVSW = GND TEB = GND TEB = 2VR GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND Test Circuit Test Condition GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND Min 197 0.89 -1.0 -1.0 ¾ ¾ -20 -50 3.8 ¾ 10 1.81 8.15 ¾ ¾ -1.0 -1.0 ¾ ¾ -80 -300 3.8 GND Reference ¾ ¾ GND Reference ¾ ¾ 10 ¾ 3.3 ¾ 10 Typ. 232 1.05 ¾ ¾ 26.5 26.5 ¾ ¾ ¾ ¾ ¾ 2.13 9.59 45 -45 ¾ ¾ 44 44 ¾ ¾ ¾ ¾ ¾ 40 ¾ ¾ ¾ Max 267 1.20 1.0 dB 1.0 ¾ kHz ¾ 20 mV 50 ¾ 0.5 ¾ 2.45 MW 11.02 ¾ % ¾ 1.0 dB 1.0 ¾ kHz ¾ 80 mV 300 ¾ 0.5 ¾ ¾ ¾ 0.9 ¾ kW kW kHz V kW Unit kW MW f = 1 kHz RNF = 91 kW f = 1 kHz RNF = 91 kW -3dB point RNF = 91 kW RNF = 91 kW VR Reference V DGv ¾ TNI input RNF = 75 kW TEB = VR Reference f = 1 kHz RNF = 75 kW TEB = VR GB1 ¾ GB2 fc1 ¾ fc2 VOS1 ¾ VOS2 VOH VOL RLM fC VOH VOL RLM ¾ ¾ ¾ ¾ ¾ -3dB point RNF = 75 kW RNF = 75 kW VR Reference V 6 2003-01-16 TA2151FN Characteristics Voltage gain Detection frequency characteristic 1 Detection frequency characteristic 2 RFRP Operation reference voltage 1 Operation reference voltage 2 Permissive load resistance RFCT RFRP ®RFCT Detection frequency characteristic 1 Detection frequency characteristic 2 Output offset voltage Symbol Gv fc1 ¾ fc2 VOPR1 ¾ VOPR2 RLM fc1 ¾ fc2 VOS ¾ CPKC = 0.22 mF RFRP Reference, RFCT ¾ -50 70 ¾ ¾ 50 mV ¾ SEL = VCC VR Reference No Input VR Reference 700 kHz, 1.2 Vp-p ¾ CBTC = 0.22 mF ¾ -1.1 0.7 10 ¾ 200 -1.0 0.8 ¾ 70 ¾ -0.9 V 0.9 ¾ ¾ Hz kW Test Circuit ¾ SEL = HiZ Test Condition ¾ Min ¾ ¾ Typ. 1.7 100 Max ¾ ¾ kHz Unit V/V Note: If the IC is used abnormally (ex. wrongly mounted), it may be dameged or destroyed. 7 2003-01-16 TA2151FN Test Circuit 150 kW 0.5 pF 40 pF BOTTOM DETECTION 20 kW 20 kW 9.1 kW 15 3 pF 10 kW 10 kW 30 kW 14 10 pF 30 kW 75 kW 20 kW 3 pF RFDC FEO 9.1 kW 91 kW 16 10 pF 60 kW 40 pF 150 kW 56.4 kW 56.4 kW SEB 18 13 TEN 9.1 kW 17 FEN TEO VRO 0.1 mF 47 mF 47 mF 19 21.82 kW 48 kW 3 STATE DET. 83 kW 2.9 kW 1 kW 12 2VRO 0.1 mF 20 kW 20 20 kW 20 kW 20 kW 12 kW 12 kW 9.1 kW RFRP 11 TEB RFCT 100 kW 100 kW BTC 21 0.22 mF 11 kW 100 W 10 SEL 22 9 0.1 mF 1.4 kW 189 kW 13 kW 2.26 kW 2.4 kW 20 kW LDO 15 pF BOTTOM PEAK I-I 189 kW 15 pF 60 kW I-I 6 7 20 kW RFRPIN 100 mF PKC 23 0.22 mF 8 MDI 11 kW 24 180 kW TNI 9.1 kW RFGO 25 180 kW TPI GVSW 26 60 kW 3 kW 5 47 kW FPI AGCIN 9.1 kW 27 AGC Amp. 3 kW 4 47 kW FNI RFO 28 3 VRIN 20 kW GND 29 12.8 kW 2 RFGC 100 mF 8 0.1 mF 30 RFN2 12.8 kW 1 VCC 2003-01-16 TA2151FN Package Dimensions Weight: 0.17 g (typ.) 9 2003-01-16 TA2151FN RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 10 2003-01-16