TA2153FN

TA2153FN TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA2153FN RF Amplifier for Digital Servo CD System TA2153FN is a 3-beam type PUH compatible RF amplifier for digital servo to be used in the CD system. In combination with a CMOS single chip processor TC9462F/TC9495F, a CD system can be composed very simply. Features · · · · · · · · · · · · Built-in amplifier for reference (VRO, 2VRO) supply. Built-in auto laser power control circuit. Built-in RF amplifier. Built-in AGC amplifier. Built-in focus error amp and tracking error amp. Built-in sub-beam adder signal amplifier. Built-in gain change circuit for CD-RW. Capable of tracking balance control with TC9462F/TC9495F. Capable of RF gain adjustment circuit with TC9462F/TC9495F. Built-in signal amplifier for track counter. Capable of 4 times speed operation. 30 pin mini flat package. Weight: 0.17 g (typ.) 1 2003-01-18 TA2153FN Block Diagram 36 pF 10 k9 FEO 16 10 pF 15 k9 15 k9 10 k9 10 k9 30 k9 3 pF 50 k9 15 SBAD 3 pF 30 k9 20 k9 10 pF 13 TEN 14 TEO FEN 17 60 k9 SEB 18 VRO 19 20 k9 RFRP 20 11 k9 100 k9 BTC 21 100 9 20 k9 20 k9 21.82 k9 12 k9 12 k9 20 k9 3 STATE DET. 48 k9 83 k9 2.9 k9 SW2 SW1 1 k9 12 2VRO 11 TEB 10 SEL 100 k9 RFCT 22 9 LDO SW3 238 k9 15 pF BOTTOM PEAK 13 k9 1.4 k9 2.26 k9 I (1/4) I-I 238 k9 15 pF I-I 150 k9 I (3/4) I (1/4) 6 TPI I (3/4) 5 FPI 7 TNI 8 MDI PKC 23 11 k9 RFGO 25 20 k9 RFRPIN 24 GVSW 26 90 k9 60 k9 AGC Amp. 20 k9 60 k9 40 pF 1 k9 1 k9 RFO 28 150 k9 40 pF AGCIN 27 4 FNI 3 GMAD GND 29 2 RFGC RFN2 30 1 VCC LDC SEL SW1 GND HiZ VCC ON OFF OFF SW2 OFF ON ON SW3 OFF ON ON RFRP Detect Frequency Low Low High GVSW GND HiZ VCC Mode CD-RW Normal SEB GND HiZ VCC Bottom Detect ON ON OFF Peak Detect ON ON ON 2 2003-01-18 TA2153FN Pin Function Pin No. 1 2 3 4 Symbol VCC RFGC GMAD FNI I/O ¾ I I I Function Description Power supply input terminal. RF amplitude adjustment control signal input terminal. Controlled by 3-PWM signals. (PWM carrier = 88.2 kHz) Open loop gain adjustment terminal for AGC amp. Main beam I-V amp input terminal. Remarks ¾ 3 signals input. (2VRO, VRO, GND) (Note1) Connected to pin diode output B + D (through resistor). Connected to pin diode output A + C (through resistor). Connected to pin diode output F. Connected to pin diode output E. Connected to monitor photo diode. Connected to laser diode control circuit. 5 FPI I Main beam I-V amp input terminal. 6 7 8 9 TPI TNI MDI LDO I I I O Sub beam I-V amp input terminal. Sub beam I-V amp input terminal. Monitor photo diode amp input terminal. Laser diode amp input terminal. Laser diode control signal input terminal and APC circuit ON/OFF control signal terminal. SEL Level APC Circuit OFF ON ON LDO Connected to VCC through resister (1 kW) Control signal output Control signal output Detect Frequency Low Low High 10 SEL I GND HiZ VCC 3 signals input. (VCC, HiZ, GND) 11 TEB I Tracking error balance adjustment signal input terminal. Controlled by 3-PWM signal. (PWM carrier = 88.2 kHz) Reference voltage (2VRO) output terminal. 2VRO = 4.2 V when VCC = 5 V TE amp negative input terminal. TE error signal output terminal. Sub beam adder signal output terminal. Focus error signal output terminal. FE amp negative input terminal. RFRP output circuit switching terminal. Bottom Detection ON OFF Peak Detection ON ON 3 signals input. (2VRO, VRO, GND) ¾ Connected to TEO through feedback resistor. ¾ ¾ ¾ Connected to FEO through feedback resistor. 12 13 14 15 16 17 2VRO TEN TEO SBAD FEO FEN O I O O O I SEB Level 18 SEB I GND VCC Low (GND) is for normal use. Reference signal (VRO) output terminal. 19 20 21 VRO RFRP BTC O O I VRO = 2.1 V when VCC = 5 V Track count signal output terminal. Time constant adjustment terminal for bottom detection. ¾ ¾ Adjusted by capacitance. 3 2003-01-18 TA2153FN Pin No. 22 23 24 25 Symbol RFCT PKC RFRPIN RFGO I/O O I I O Function Description RFRP signal center level output terminal. Time constant adjustment terminal for peak detection. Input terminal for track count signal output amp. Output terminal for RF signal amplitude adjustment amp. Amp (AGC, FE, TE) gain switching terminal. Remarks ¾ Adjusted by capacitance. ¾ ¾ GVSW 26 GVSW I GND HiZ VCC Mode CD-RW Normal Normal Connected to RFO through capacitance. ¾ ¾ Connected to pin-diode output A + B + C + D (through resistor). Low (GND) is for 5 times gain. 27 28 29 30 AGCIN RFO GND RFN2 I O ¾ I Input terminal for RF signal amplitude adjustment amp. Output terminal for RF signal amp. Ground terminal. Input terminal for RF signal amp. Note 1: Pin3 (GMAD) is gm adjustment terminal for AGC amp by applying a voltage (between 1.5 V and 4.2 V). If pin3 (GMAD) is open, voltage of this terminal is fixed VR by IC interior. Characteristic of frequency (open-loop characteristic) and voltage is as below. GMAD Terminal Voltage 1.5 V Gain 4.2 V VCC GMAD 3 (Note2) VR VR Frequency By changing a voltage (pin3) between 1.5 V and 4.2 V, frequency band width is changed. Note 2: Current is changed by pin3 (GMAD) voltage. Maximum Ratings (Ta = 25°C) Characteristics Power supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC PD Topr Tstg Rating 8 500 -40~85 -55~150 Unit V mW °C °C 4 2003-01-18 TA2153FN Electrical Characteristics (unless otherwise specified, VCC = 5 V, Ta = 25°C) Characteristics Power supply Assured power supply voltage Power supply current Reference voltage Reference voltage Output current (2VRO) Input current Reference voltage Reference Reference voltage limit voltage Output current (VRO) Input current Frequency band width Output slew rate Symbol VCC ICC 2VR IOH2 IOL2 VR DVR IOH1 IOL1 fc SR Test Circuit ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ f = 1 kHz VLDO = 3.5 VDC SEL = GND, VCC Reference MDI = 178 mV DV = -0.2 V DV = +0.1 V ¾ 2 ´ VR/2VR - 1 DV = -0.2 V DV = +0.1 V -3dB point, RIN = 6 kW Between RFO - RFN2: 33 kW CRFO = 20 pF, RIN = 6 kW Between RFO - RFN2: 33 kW VR Reference Between RFO - RFN2: 33 kW Input: VR short GND Reference GND Reference ¾ f = 1 MHz, RFGC = 0.6 V, GVSW = VCC, GMAD = VR f = 1 MHz, RFGC = 3.6 V, GVSW = VCC, GMAD = VR f = 1 MHz, RFGC = 0.6 V, GVSW = GND, GMAD = VR f = 1 MHz, RFGC = 3.6 V, GVSW = GND, GMAD = VR -0.5dB point, RFGC = 2.1 V, GVSW = VCC, GMAD = VR -0.5dB point, RFGC = 2.1 V, GVSW = GND, GMAD = VR CRFGO = 20 pF VR Reference GMAD = VR Input: Open GND Reference GND Reference ¾ GVSW = VCC GVSW = GND SEL = HiZ ¾ Test Condition ¾ Min 4.5 26 4.0 2.0 0.1 2.0 -3.0 5.0 5.0 ¾ ¾ ¾ 3.8 ¾ 10 0.6 1.3 2.7 5.8 ¾ ¾ ¾ ¾ ¾ 3.7 ¾ 10 ¾ 170 -0.7 -200 Typ. 5.0 35 4.2 ¾ ¾ 2.1 0 ¾ ¾ 8 22 -100 ¾ ¾ ¾ 0.7 1.5 3.2 6.8 12 12 40 -100 0 ¾ ¾ ¾ 200 178 ¾ ¾ Max 5.5 44 4.4 ¾ ¾ 2.2 3.0 ¾ ¾ ¾ ¾ ¾ ¾ 0.9 ¾ 0.8 1.7 V/V 3.6 7.7 ¾ MHz ¾ ¾ ¾ mV ¾ ¾ 0.9 ¾ ¾ 192 ¾ 200 kW V/V mV V nA V V / ms kW Unit V mA V mA V % mA MHz V / ms RF1 Output offset voltage Upper limit output voltage Lower limit output voltage Permissive load resistance Lower limit voltage gain 1 (normal mode) Upper limit voltage gain 1 (normal mode) Lower limit voltage gain 2 (CD-RW mode) Upper limit voltage gain 2 (CD-RW mode) Frequency band width (normal mode) VOS VOH VOL RLM Gv1L Gv1H Gv2L Gv2H fc1 fc2 SR VOS1 VOS2 VOH VOL RLM Gv VMDI VLDOP II mV V RF2 (AGC) Frequency band width (CD-RW mode) Output slew rate Output offset voltage 1 (normal mode) Output offset voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Voltage gain Operation ref. Voltage APC LD off voltage Input bias current 5 2003-01-18 TA2153FN Characteristics Voltage gain 1 (normal mode) Voltage gain 2 (CD-RW mode) Gain balance 1 (normal mode) Gain balance 2 (CD-RW mode) FE Frequency band width Output offset voltage 1 (normal mode) Output offset voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Voltage gain 1 (normal mode) Voltage gain 2 (CD-RW mode) max voltage Voltage ratio gain adjustable min voltage range ratio Gain balance 1 (normal mode) TE Gain balance 2 (CD-RW mode) Frequency characteristic cut-off frequency Output offset voltage (normal mode) Output offset voltage (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Voltage gain 1 (normal mode) Voltage Gain 2 (CD-RW mode) Frequency Band Width Operation reference voltage 1 (normal mode) Operation reference voltage 2 (CD-RW mode) Upper limit output voltage Lower limit output voltage Permissive load resistance Symbol Gv1 Gv2 GB1 GB2 fc VOS1 VOS2 VOH VOL RLM Gv1 Gv2 Test Circuit ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ f = 1 kHz RFN = 100 KW RTI = 47 kW Test Condition f = 1 kHz RNF = 91 kW RFI = 47 kW GVSW = VCC GVSW = GND GVSW = VCC GVSW = GND Min 4.3 19.3 -1.0 -1.0 ¾ -20 -50 3.8 ¾ 10 GVSW = VCC GVSW = GND TEB = GND TEB = 2VR GVSW = VCC GVSW = GND 10.9 50 40 -50 -1.0 -1.0 ¾ -80 -300 3.8 ¾ 10 GVSW = VCC GVSW = GND 2.0 9.0 ¾ -1.15 -1.0 3.8 ¾ 10 Typ. 4.8 21.6 ¾ ¾ 26.5 ¾ ¾ ¾ ¾ ¾ 12.3 56 45 -45 ¾ ¾ 44 ¾ ¾ ¾ ¾ ¾ 2.7 12.2 44 -1.05 -0.9 ¾ ¾ ¾ Max 5.3 V/V 23.9 1.0 dB 1.0 ¾ 20 mV 50 ¾ 0.5 ¾ 13.5 V/V 60 50 % -40 1.0 dB 1.0 ¾ 80 mV 300 ¾ 0.5 ¾ 3.4 V/V 15.3 ¾ -0.95 V -0.8 ¾ 1.3 ¾ kW V kHz kW kHz kW kHz Unit f = 1 kHz RNF = 91 kW RFI = 47 kW -3dB point RNF = 91 kW GVSW = VCC RFI = 47 kW VR Reference Input: VR short GVSW = GND GND Reference GND Reference ¾ V DGv ¾ TNI input TEB = VR Reference f = 1 kHz RNF = 100 kW RFI = 47 kW TEB = VR RNF = 100 kW -3dB point GB1 GB2 fc VOS1 VOS2 VOH VOL RLM Gv1 Gv2 fc VOPR1 VOPR2 VOH VOL RLM ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ RNF = 100 kW GVSW = VCC RFI = 47 kW VR Reference Input: VR short GVSW = GND GND Reference GND Reference ¾ f = 1 kHz RTI = 47 kW TEB = VR -3dB point VR Reference GVSW = VCC RTI = 47 kW Input: VR short GVSW = GND GND Reference GND Reference ¾ V SBAD 6 2003-01-18 TA2153FN Characteristics Voltage gain Detection frequency characteristic 1 Detection frequency characteristic 2 RFRP Operation reference voltage 1 Operation reference voltage 2 Permissive load resistance RFCT RFRP ® RFCT Detection frequency characteristic 1 Detection frequency characteristic 2 Output offset voltage Symbol Gv fc1 fc2 VOPR1 VOPR2 RLM fc1 fc2 VOS Test Circuit ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ SEL = HiZ SEL = VCC VR Reference No Input VR Reference 700 kHz, 1.2 Vp-p ¾ CBTC = 0.22 mF CPKC = 0.22 mF RFRP Reference, RFCT Test Condition ¾ Min ¾ ¾ ¾ -1.1 0.7 10 ¾ ¾ -50 Typ. 1.7 100 200 -1.0 0.8 ¾ 70 70 ¾ Max ¾ ¾ kHz ¾ -0.9 V 0.9 ¾ ¾ Hz ¾ 50 mV kW Unit V/V Note: If the IC is used abnormally (ex. wrongly mounted), it may be damaged or destroyed. 7 2003-01-18 TA2153FN Package Dimensions Weight: 0.17 g (typ.) 8 2003-01-18 TA2153FN RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 9 2003-01-18