TA84007PQ

TA84007PQ/SG/FG Preliminary TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA84007PQ,TA84007SG,TA84007FG DC Motor Full Bridge Driver ICs (Forward/reverse switching driver ICs) The TA84007PQ, TA84007SG and TA84007FG are bridge driver ICs designed for forward/reverse rotation switching and that are capable of four modes of control (forward, reverse, stop and brake). The TA84007PQ has an output current of 1.0 A (AVE.) and 2.0 A (PEAK) and the TA84007SG and TA84007FG have an output current of 0.4 A (AVE.) and 1.2 A (PEAK). These driver ICs are equipped with a dual power supply pin on the output and control sides and a Vref pin on the output side capable of controlling motor voltage making it possible to adjust the voltage applied to the motor. Additionally, these driver ICs have a low input current and can connect directly to the CMOS. TA84007PQ TA84007SG Features • Operation power supply voltage range: VCC (opr.) = 4.5 to 27 V VS (opr.) = 4.5 to 27 V Vref (opr.) = 4.5 to 27 V Usage Note: Design your application so that Vref ≤ VS Output current: PQ: 1.0 A (AVE.), 2.0 A (PEAK) SG and FG: 0.4 A (AVE.), 1.2 A (PEAK) Built-in thermal shutdown and overcurrent protection Built-in back EMF suppression diode Built-in input hysteresis Built-in standby • • • • • TA84007FG Note: These ICs are highly sensitive to electrostatic discharge. When handling them, please be careful of electrostatic discharge, temperature and humidity conditions. Weight HSIP10-P-2.54: 2.47 g (typ.) SOIP9-P-2.54A: 0.92 g (typ.) HSOP16-P-300-1.00: 0.50 g (typ.) The following conditions apply to solderability: *Solderability 1. Use of Sn-37Pb solder bath *solder bath temperature = 230ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 1 2006-3-6 TA84007PQ/SG/FG Block Diagram VCC 7/2/11 4/8/5 8/6/15 VS Vref REG 2/7/4 OUT1 M Protector (thermal shutdown) 10/3/13 OUT2 5/9/7 IN1 IN2 6/1/9 1/5/1 GND TA84007PG/SG/FG Pin Functions Symbol PQ VCC VS Vref GND IN1 IN2 OUT1 OUT2 7 8 4 1 5 6 2 10 Pin No. SG 2 6 8 5 9 1 7 3 FG 11 15 5 1 7 9 4 13 Logic side power supply pin Output side power supply pin Control power supply pin Ground Input pin Input pin Output pin Output pin Description PQ: No. 3 and 9 pins are NC (no connection) SG: No. 4 pin is NC FG: No. 2, 3, 6, 8, 10, 12, 14 and 16 pins are NC Toshiba recommends shorting the TA84007FG’s fin to GND. (The fin is shorted on the rear side of the IC chip and has a grounding electrical potential.) 2 2006-3-6 TA84007PQ/SG/FG Function Input IN1 0 1 0 1 IN2 0 0 1 1 OUT1 ∞ H L L Output OUT2 ∞ L H L Stop CW/CCW CCW/CW Brake Mode ∞: High impedance Note: Input is high-active Absolute Maximum Ratings (Ta = 25°C) Characteristics Logic side power supply voltage Symbol VCC VCC (opr.) Output side power supply voltage VS VS (opr.) Control power supply voltage PQ PEAK SG and FG Power current PQ AVE. SG and FG PQ Power dissipation SG FG Operating temperature Storage temperature Topr Tstg PD IO (AVE.) 1.0 0.4 12.5 (Note 1) 0.95 (Note 2) 1.4 (Note 3) −30 to 75 −55 to 150 °C °C W IO (PEAK) Vref Vref (opr.) Rating 30 27 30 V 27 30 V 27 2.0 1.2 A Unit V Note 1: Tc = 25°C Note 2: Standalone IC Note 3: PCB mounting condition (PCB area 60 × 30 × 1.6 mm, occupies copper area of 50% or greater) Operation power supply voltage range: VCC (opr.) = 4.5 to 27 V VS (opr.) = 4.5 to 27 V Vref (opr.) = 4.5 to 27 V Vref ≤ VS 3 2006-3-6 TA84007PQ/SG/FG Electrical Characteristics (Ta = 25°C, VCC = 5 V, VS = 24 V) Characteristics Symbol ICC1 Power supply current ICC2 ICC3 1 (high) Input voltage 2 (low) Input current Upper SG and FG Lower VSAT L-1 VIN1 VIN2 IIN VSAT U-1 2 1 Test Circuit Test Condition Output OFF, CW/CCW mode Output OFF, Stop mode Output OFF, Brake mode Tj = 25°C Sink VIN = 3.5 V Vref = VS output − VS measure IO = 0.2 A, CW/CCW mode Vref = VS output − VS measure IO = 0.2 A, CW/CCW mode Vref = VS output − VS measure IO = 0.4 A, CW/CCW mode 3 Lower VSAT L-2 Vref = VS output − VS measure IO = 0.4 A, CW/CCW mode Vref = VS output − VS measure IO = 1.0 A, CW/CCW mode Vref = VS output − VS measure IO = 1.0 A, CW/CCW mode Vref = 10 V output − GND measure, IO = 0.2 A, CW/CCW mode Vref = 10 V output − GND measure, IO = 0.4 A, CW/CCW mode 3 VSAT U-3’ PQ VSAT U-4’ Output transistor leakage current Upper Lower ILU ILL VF U-1 VF U-2 VF L-1 VF L-2 Iref 2 5 Vref = 10 V output − GND measure, IO = 0.5 A, CW/CCW mode Vref = 10 V output − GND measure, IO = 1.0 A, CW/CCW mode 4 V L = 30 V V L = 30 V ⎯ ⎯ ⎯ ⎯ Vref = 10 V, source type Min. ⎯ ⎯ ⎯ 3.5 GND ⎯ ⎯ Typ. 11.0 0 9.5 ⎯ ⎯ 3 0.9 Max. 16.0 50 13.0 5.5 V 0.8 10 1.2 µA Unit mA µA mA ⎯ 0.8 1.2 Upper Output saturation voltage SG and FG VSAT U-2 ⎯ 1.0 1.35 V ⎯ 0.9 1.35 Upper PQ Lower VSAT U-3 ⎯ 1.3 1.8 VSAT L-3 ⎯ 1.2 1.85 VSAT U-1’ SG and FG VSAT U-2’ Upper side residual voltage ⎯ 11.2 ⎯ 10.4 10.9 12.2 V ⎯ 11.0 ⎯ 10.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.7 ⎯ ⎯ 1.5 2.5 0.9 1.2 ⎯ 12.0 10 10 ⎯ ⎯ ⎯ ⎯ 40 µA V µA SG and FG Upper Diode forward voltage PQ Lower SG and FG Upper PQ Lower Control power supply current 4 2006-3-6 TA84007PQ/SG/FG Test Circuit 1. ICC1, ICC2, ICC3 7/2/11 4/8/5 8/6/15 A VCC SW 2 VIN (H) 3.5 V VIN2 6/1/9 1/5/1 GND 10/3/13 TA84007FG’s fin is shorted to GND Test Circuit 2. VIN1, VIN 2, IIN, Iref 5V SW 1 VIN1 5/9/7 TA84007PQ/SG/AFG 2/7/4 V S = 24 V VS A 10 V VS VCC 5V SW 1 VIN1 VIN2 A VIN SW 2 5 V (max) 0 V (min) 5/9/7 6/1/9 1/5/1 GND TA84007PQ/SG/FG 2/7/4 OUT1 10/3/13 OUT2 TA84007PQ/SG/FG TA84007FG’s fin is shorted to GND V S = 24 V SW 3 7/2/11 4/8/5 8/6/15 Vref 5 2006-3-6 TA84007PQ/SG/FG Test Circuit 3. VSAT U-1, 2, 3 VSAT L-1, 2, 3 VCC VSAT U-1’, 2’, 3’, 4’ SW 4 10 V V VS 8/6/15 OUT1 5/9/7 6/1/9 1/5/1 GND TA84007PQ/SG/FG 2/7/4 VS 10/3/13 SW 3 OUT2 V A VL A VL VU IU V L = 30 V V SW1 SW2 VU IL V V L = 30 V 5V 7/2/11 VIN1 4/8/5 RL (Note) Vref SW 1 SW 2 VIN (H) 3.5 V VIN2 TA84007FG’s fin is shorted to GND Note: Use RL to calibrate IOUT to 0.2 A, 0.4 A, 0.5 A or 1.0 A. Test Circuit 4. ILU, L VS 7/2/11 4/8/5 8/6/15 OUT1 5/9/7 TA84007PQ/SG/FG 2/7/4 6/1/9 1/5/1 10/3/13 OUT2 TA84007PQ/SG/FG TA84007FG’s fin is shorted to GND Test Circuit 5. VF U-1, 2 VF L-1, 2 VS 7/2/11 4/8/5 8/6/15 OUT1 5/9/7 6/1/9 1/5/1 TA84007PQ/SG/FG 2/7/4 10/3/13 OUT2 V S = 24 V 6 2006-3-6 TA84007PQ/SG/FG TA84007PQ PD – Ta 15 (1) Infinite heat sink 80 cm2 × 2 mm Al equivalent (θHS = 6°C/W) 10 (2) (4) (3) 15 cm2 × 2 mm Al equivalent (θHS = 20°C/W) No heat sink θj-a = 65°C/W 5 (3) (4) TA84007PQ t – Rth (1) Infinite heat sink 80 cm2 × 2 mm Al heat sink 25 cm2 × 2 mm Al heat sink No heat sink Input pulse (W) (1) (2) Transient thermal resistance Rth (°C/W) (2) (3) (4) PW t (s) (4) (3) Power dissipation PD 100 50 30 (2) 10 5 3 (1) 0 0 50 100 150 200 1 10−2 10−1 1 10 102 103 Ambient temperature Ta (°C) Pulse width t (s) TA84007SG PD – Ta 2.0 Standalone θj-a = 130°C/W 1000 500 300 TA84007SG t – Rth Standalone (W) Power dissipation PD Transient thermal resistance Rth (°C/W) 1.6 100 50 30 Input pulse 10 5 3 PW 1.2 0.8 0.4 t (s) 1 10 100 1000 0 0 25 50 75 100 125 150 175 1 0.1 Ambient temperature Ta (°C) Pulse width t (s) TA84007FG PD – Ta 2.0 (1) 1.6 (1) (2) 1.2 PCB mounting condition PCB area 60 × 30 × 1.6 mm occupies copper area of 50% or greater Standalone θj-a = 140°C/W TA84007FG t – Rth (1) (2) Standalone PCB mounting condition PCB area 60 × 30 × 1.6 mm occupies copper area of 50% or greater Input pulse PW (W) Transient thermal resistance Rth (°C/W) t (s) (1) Power dissipation PD 200 100 (2) 50 30 0.8 (2) 0.4 0 0 25 50 75 100 125 150 175 10 1 10 100 1000 Ambient temperature Ta (°C) Pulse width t (s) 7 2006-3-6 TA84007PQ/SG/FG TA84007PQ VCE (SAT) – IOUT (upper side) 3.2 3.2 TA84007PQ VCE (SAT) – IOUT (lower side) 2.4 2.4 (V) VCE (SAT) 1.6 VCE (SAT) 0.4 0.8 1.2 1.6 2.0 (V) 1.6 0.8 0.8 0 0 0 0 0.4 0.8 1.2 1.6 2.0 IOUT (A) IOUT (A) Vref – VOUT (H) Characteristics Test circuit VS = 12 V VCC = 5 V VS – VOUT (H) Characteristics Test circuit VCC 5V Vref = 8.0 V VCC = 5.0 V VS 7/2/11 VCC 5/9/7 8/6/15 VS OUT1 Vref 4/8/5 2/7/4 V 10 Ω 10 11 40 Ω Open IN1 IN2 G 1/5/1 7/2/11 VCC 5/9/7 6/1/9 IN1 IN2 G 1/5/1 8/6/15 VS OUT1 Vref 4/8/5 2/7/4 V 12 V 5V Open 6/1/9 10 Ω 40 Ω TA84007FG's fin is shorted to GND 12 Output open 10 9 10 8V TA84007FG's fin is shorted to GND Output open 40 Ω load 10 Ω load (V) 40 Ω load 6 10 Ω load VOUT (H) VOUT (H) 12 (V) 8 8 4 7 2 0 0 6 2 4 6 8 10 8 9 12 Vref (V) VS (V) 8 2006-3-6 TA84007PQ/SG/FG Usage Precautions Power Input When turning on the power, first apply power to VCC and then apply power to VS. (NOTE: It is also okay to apply power to both at the same time.) When turning off the power, first turn off VS and then turn off VCC. (NOTE: It is also okay to turn off both at the same time.) Input Circuitry As shown in the drawing, input is high-active. When you apply the defined VIN (H) amount of voltage (or greater), the logic will go high and if you apply the defined VIN (L) amount of voltage (or lower) the corresponding pin will be grounded and logic will go low. In addition, when logic is high, input current IIN will be inputted so be careful of the prior stage’s output impedance. Input hysteresis is 0.7 V (typ.) When turning on the power (VCC), keep input (both IN1 and IN2) low. VCC standby VIN VIN 5/9/7 or 6/1/9 1 kΩ 4.5 kΩ 10 kΩ 5 kΩ Output Circuitry Output “H” Voltage • Vref Voltage Operation The voltage applied to Vref is filtered through the Vref circuit and the resulting 2VBE (small signal) high voltage is applied to Q2 (Pw Tr)’s base-A. The resulting VBE (Q2) low voltage is output as VOUT (H). VOUT = Vref + 2VBE − VBE (Q2) @ Vref + 0.7 V About the Vref Pin When you aren’t using the Vref pin, don’t leave it open but rather connect it to the VS pin using protective resistance (of 3 kΩ or higher). Also, design your application so that Vref ≤ VS. TA84007PQ/SG/FG 8/6/15 Q1 A Vref circuit Q2 1.3 kΩ 1/5/1 or 10/3/13 2/7/4 4/8/5 VOUT Vref • 1/5/1 Protector Function Overcurrent Protection TA84007PQ/SG/FG If the current flowing to the upper power transistor is detected as being over the configured current threshold (about 2.5 A), the overcurrent protector turns off all output. However, this doesn’t protect against all potential overcurrent scenarios. For example, it is possible to destroy the IC due to an output short-circuit or grounding fault prior to the overcurrent protector even being activated. Please connect a resistor or fuse to the power (VS) line as protection against such overcurrent scenarios. (Refer to the application example on the next page.) Thermal Shutdown If the chip’s temperature is detected as being over the configured temperature threshold (about 170°C), the thermal shutdown circuit turns off all output. 10 k Ω 9 2006-3-6 TA84007PQ/SG/FG Application Example R1 (Note 2) VS (Note 1) 10 µF VCC R2 (Note 3) 7/2/11 8/6/15 4/8/5 IN1 IN2 5/9/7 6/1/9 TA84007PQ/SG/FG 2/7/4 M 10/3/13 1/5/1 GND TA84007PQ/SG/FG Note 1: Experiment to determine the optimum capacity value (22 µF or greater) for the capacitor. Position the capacitor near the pin (within 20 mm). Note 2: Use a current limiting resistor (R1) to protect against overcurrent. Note 3: If you wish to use the IC with VS = Vref, use a resistor to protect against Vref pin surge Note 4: Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting between contiguous pins. Application Precautions • • Insert a stop (of about 100 µs) during switching (forward U reverse, forward/reverse U brake) to prevent against in-rush current flow. IC functionality is not guaranteed when the IC is being powered on and off. Please confirm that there will be no problems in your application in this regard. 10 2006-3-6 TA84007PQ/SG/FG Package Dimensions Weight: 2.47 g (typ.) 11 2006-3-6 TA84007PQ/SG/FG Package Dimensions Weight: 0.92 g (typ.) 12 2006-3-6 TA84007PQ/SG/FG Package Dimensions Weight: 0.50 g (typ.) 13 2006-3-6 TA84007PQ/SG/FG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Timing charts may be simplified for explanatory purposes. The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. 2. Equivalent Circuits 3. Timing Charts 4. Application Circuits 5. Test Circuits IC Usage Considerations Notes on handling of ICs [1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 14 2006-3-6 TA84007PQ/SG/FG Points to remember on handling of ICs (1) Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 15 2006-3-6 TA84007PQ/SG/FG 16 2006-3-6