TAR5S25U

TAR5S15U~TAR5S50U TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15U~TAR5S50U Point Regulators (Low-Dropout Regulator) The TAR5SxxU Series is comprised of general-purpose bipolar single-power-supply devices incorporating a control pin which can be used to turn them ON/OFF. Overtemperature and overcurrent protection circuits are built in to the devices’ output circuit. Features • • • • • • • Low stand-by current Overtemperature/overcurrent protection Operation voltage range is wide. Maximum output current is high. Difference between input voltage and output voltage is low. Small package. (UFV package: Similar toSOT-353) Ceramic capacitors can be used. Weight: 0.007 g (typ.) Pin Assignments (top view) VIN 5 VOUT 4 1 2 3 NOISE CONTROL GND Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating ratings below the maximum ratings. Do not use devices under conditions in which their maximum ratings will be exceeded. 1 2003-02-10 TAR5S15U~TAR5S50U List of Products Number and Marking Products No. TAR5S15U TAR5S16U TAR5S17U TAR5S18U TAR5S19U TAR5S20U TAR5S21U TAR5S22U TAR5S23U TAR5S24U TAR5S25U TAR5S26U TAR5S27U TAR5S28U TAR5S29U TAR5S30U TAR5S31U TAR5S32U Marking 1V5 1V6 1V7 1V8 1V9 2V0 2V1 2V2 2V3 2V4 2V5 2V6 2V7 2V8 2V9 3V0 3V1 3V2 Products No. TAR5S33U TAR5S34U TAR5S35U TAR5S36U TAR5S37U TAR5S38U TAR5S39U TAR5S40U TAR5S41U TAR5S42U TAR5S43U TAR5S44U TAR5S45U TAR5S46U TAR5S47U TAR5S48U TAR5S49U TAR5S50U Marking 3V3 3V4 3V5 3V6 3V7 3V8 3V9 4V0 4V1 4V2 4V3 4V4 4V5 4V6 4V7 4V8 4V9 5V0 Marking on the Product Example: TAR5S30U (3.0 V output) 3V0 Maximum Ratings (Ta = 25°C) Characteristics Supply Voltage Output Current Power Dissipation Operation Temp. Range Storage Temp. Range Symbol VIN IOUT PD Topr Tstg Rating 15 200 450 −40 to 85 −55 to 150 (Note) Unit V mA mW °C °C Note: Mounted on a glass epoxy circuit board of 30 × 30 mm Pad dimension of 35 mm2 2 2003-02-10 TAR5S15U~TAR5S50U TAR5S15U~TAR5S22U Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Characteristics Output voltage Line regulation Load regulation Quiescent current Stand-by current Output noise voltage Temperature coefficient Input voltage Ripple rejection Control voltage (ON) Control voltage (OFF) Control current (ON) Control current (OFF) Symbol VOUT Reg･line Reg･load IB1 IB2 IB (OFF) VNO TCVO VIN R.R. VCT (ON) VCT (OFF) ICT (ON) ICT (OFF) VCT = 1.5 V VCT = 0 V Test Condition Min Typ. Max Unit Please refer to the Output Voltage Accuracy table. VOUT + 1 V < VIN < 15 V, = = IOUT = 1 mA 1 mA < IOUT < 150 mA = = IOUT = 0 mA IOUT = 50 mA VCT = 0 V VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < f < 100 kHz, == CNOISE = 0.01 µF, Ta = 25°C −40°C < Topr < 85°C = = ⎯ VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 µF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.4 ⎯ 1.5 ⎯ ⎯ ⎯ 3 25 170 550 ⎯ 30 100 ⎯ 70 ⎯ ⎯ 3 0 15 75 ⎯ 850 0.1 ⎯ ⎯ 15 ⎯ VIN 0.4 10 0.1 µA µVrms ppm/°C V dB V V µA µA mV mV µA TAR5S23U~TAR5S50U Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Characteristics Output voltage Line regulation Load regulation Quiescent current Stand-by current Output noise voltage Dropout volatge Temperature coefficient Input voltage Symbol VOUT Reg･line Reg･load IB1 IB2 IB (OFF) VNO VIN − VOUT TCVO VIN R.R. VCT (ON) VCT (OFF) ICT (ON) ICT (OFF) VCT = 1.5 V VCT = 0 V Test Condition Min Typ. Max Unit Please refer to the Output Voltage Accuracy table. VOUT + 1 V < VIN < 15 V, = = IOUT = 1 mA 1 mA < IOUT < 150 mA = = IOUT = 0 mA IOUT = 50 mA VCT = 0 V VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < f < 100 kHz, == CNOISE = 0.01 µF, Ta = 25°C IOUT = 50 mA −40°C < Topr < 85°C = = ⎯ VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 µF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOUT + 0.2 V ⎯ 1.5 ⎯ ⎯ ⎯ 3 25 170 550 ⎯ 30 130 100 ⎯ 15 75 ⎯ 850 0.1 ⎯ 200 ⎯ 15 ⎯ VIN 0.4 10 0.1 µA µVrms mV ppm/°C V mV mV µA Ripple rejection Control voltage (ON) Control voltage (OFF) Control current (ON) Control current (OFF) 70 ⎯ ⎯ 3 0 dB V V µA µA 3 2003-02-10 TAR5S15U~TAR5S50U Output Voltage Accuracy (VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Product No. TAR5S15U TAR5S16U TAR5S17U TAR5S18U TAR5S19U TAR5S20U TAR5S21U TAR5S22U TAR5S23U TAR5S24U TAR5S25U TAR5S26U TAR5S27U TAR5S28U TAR5S29U TAR5S30U TAR5S31U TAR5S32U TAR5S33U TAR5S34U TAR5S35U TAR5S36U TAR5S37U TAR5S38U TAR5S39U TAR5S40U TAR5S41U TAR5S42U TAR5S43U TAR5S44U TAR5S45U TAR5S46U TAR5S47U TAR5S48U TAR5S49U TAR5S50U VOUT Symbol Min 1.44 1.54 1.64 1.74 1.84 1.94 2.04 2.14 2.24 2.34 2.43 2.53 2.63 2.73 2.83 2.92 3.02 3.12 3.21 3.31 3.41 3.51 3.6 3.7 3.8 3.9 3.99 4.09 4.19 4.29 4.38 4.48 4.58 4.68 4.77 4.87 Typ. 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 Max 1.56 1.66 1.76 1.86 1.96 2.06 2.16 2.26 2.36 2.46 2.57 2.67 2.77 2.87 2.97 3.08 3.18 3.28 3.39 3.49 3.59 3.69 3.8 3.9 4.0 4.1 4.21 4.31 4.41 4.51 4.62 4.72 4.82 4.92 5.03 5.13 V Unit 4 2003-02-10 TAR5S15U~TAR5S50U Application Note 1. Recommended Application Circuit VIN 1 µF 1 µF 5 4 Control Level HIGH Operation ON OFF VOUT 0.01 µF 1 2 3 LOW The noise capacitor should be connected to NOISE pin to GND for stable operation. The recommended value is higher than 0.0047 µF. CONTROL GND NOISE The figure above shows the recommended configuration for using a point regulator. Insert a capacitor for stable input/output operation. If the control function is not to be used, Toshiba recommend that the control pin (pin 1) be connected to the VCC pin. 2. Power Dissipation The power dissipation for board-mounted TAR5SxxU Series devices (rated at 450 mW) is measured using a board whose size and pattern are as shown below. When incorporating a device belonging to this series into your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input voltage, output current and ambient temperature. Toshiba recommend that these devices should typically be derated to 70%~80% of their absolute maximum power dissipation value. Thermal Resistance Evaluation Board VIN CIN VOUT COUT CNOISE Circuit board material: glass epoxy, Circuit board dimension:30 mm × 30 mm, Copper foil pad area: 35 mm , t = 0.8 mm 2 CONTROL GND NOISE 5 2003-02-10 TAR5S15U~TAR5S50U 3. Ripple Rejection The devices of the TAR5SxxU Series feature a circuit with an excellent ripple rejection characteristic. Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops, the circuit is ideal for use in the RF blocks incorporated in all mobile telephones. Ripple Rejection − f 80 70 60 50 40 30 20 10 0 10 10 µF 3.4 V 2.2 µF 1 µF 2.8 V Output voltage 3.1 V Input voltage TAR5S28U Input Transient Response Ripple rejection (dB) VIN = 4.0 V, CNOISE = 0.01 µF, CIN = 1 µF, Vripple = 500 mVp−p, Iout = 10 mA, Ta = 25°C 100 1k 10 k 100 k 300 k 0 1 2 3 4 Ta = 25°C, CIN = 1 µF, Cout = 10 µF, CNOISE = 0.01 µF, VIN: 3.4 V → 3.1 V, Iout = 50 mA 5 6 7 8 9 10 Frequency f (Hz) Time t (ms) 4. NOISE Pin TAR5SxxU Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitor between the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of 0.0047 µF or more between the NOISE pin and GND. The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE pin. CNOISE − VN 60 2 Turn On Waveform Control voltage waveform Output noise voltage VN (µV) 50 Control voltage VCT (ON) (V) CIN = 1 µF, Cout = 10 µF, Iout = 10 mA, Ta = 25°C 1 40 0 CNOISE = 0.01 µF Output voltage waveform 30 3 Output voltage VOUT (V) 20 TAR5S50 TAR5S30 2 0.1 µF 1 µF 0.33 µF 10 TAR5S15 1 0 0.001 µ 0.01 µ 0.1 µ 1.0 µ 0 −10 CIN = 1 µF, Cout = 10 µF, Iout = 50 mA, Ta = 25°C 0 10 20 30 40 50 60 70 80 90 NOISE capacitance CNOISE (F) Time t (ms) 6 2003-02-10 TAR5S15U~TAR5S50U 5. Example of Characteristics when Ceramic Capacitor is Used Shown below is the stable operation area, where the output voltage does not oscillate, evaluated using a Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current determines this area. TAR5SxxU Series devices operate stably even when a ceramic capacitor is used as the output capacitor. If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple rejection differs from that when a tantalum capacitor is used. This is shown below. Toshiba recommend that users check that devices operate stably under the intended conditions of use. Examples of safe operating area characteristics (TAR5S15U)Stable Operating Area 100 100 (TAR5S50U)Stable Operating Area Equivalent series resistance ESR (Ω) Equivalent series resistance ESR (Ω) 10 10 Stable Operating Area 1 1 Stable Operating Area @VIN = 2.5 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 0.02 0 20 40 60 80 100 120 140 150 0.1 0.1 @VIN = 6.0 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 0.02 0 20 40 60 80 100 120 140 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S28U)Stable Operating Area 100 Evaluation Circuit for Stable Operating Area CONTROL Equivalent series resistance ESR (Ω) 10 TAR5S**U Stable Operating Area 1 CNOISE = 0.01 µF COUT Ceramic VIN = VOUT +1V CIN Ceramic GND ESR ROUT 0.1 @VIN = 3.8 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 20 40 60 80 100 120 140 150 0.02 0 Capacitors used for evaluation Made by Murata CIN: GRM40B105K COUT: GRM40B105K/GRM40B106K Output current IOUT (mA) Ripple Rejection Characteristic (f = 10 kHz~300 kHz) (TAR5S30U) Ripple Rejection – f 70 Ceramic 10 µF 60 Tantalum10 µF Ceramic 2.2 µF Ceramic 1 µF Ripple rejection (dB) 50 40 30 Tantalum 2.2 µF Tantalum 1 µF 20 @VIN = 4.0 V, CNOISE = 0.01 µF, 10 CIN = 1 µF, Vripple = 500 mVp-p, Iout = 10 mA, Ta = 25°C 100 k 300 k 1000 k 0 10 k Frequency f (Hz) 7 2003-02-10 TAR5S15U~TAR5S50U (TAR5S15U) 1.6 IOUT – VOUT 1.9 (TAR5S18U) IOUT – VOUT VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C 25 1.5 −40 Output voltage VOUT (V) Ta = 85°C 25 1.8 −40 1.4 0 50 100 150 1.7 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S20U) 2.1 IOUT – VOUT 2.2 (TAR5S21U) IOUT – VOUT VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C 2.0 25 −40 Output voltage VOUT (V) Ta = 85°C 2.1 25 −40 1.9 0 50 100 150 2.0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S22U) 2.3 IOUT – VOUT (TAR5S23U) IOUT – VOUT VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C 2.2 25 −40 Output voltage VOUT (V) Ta = 85°C 2.3 25 −40 2.1 0 50 100 150 2.2 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 8 2003-02-10 TAR5S15U~TAR5S50U (TAR5S25U) 2.6 IOUT – VOUT 2.8 (TAR5S27U) IOUT – VOUT VIN = 2.6 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C Output voltage VOUT (V) Ta = 85°C 2.7 25 −40 2.5 25 −40 2.4 0 50 100 150 2.6 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S28U) 2.9 IOUT – VOUT 3 (TAR5S29U) IOUT – VOUT VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms Output voltage VOUT (V) Output voltage VOUT (V) Ta = 85°C 2.8 25 −40 Ta = 85°C 2.9 25 −40 2.7 0 50 100 150 2.8 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S30U) 3.1 IOUT – VOUT 3.2 (TAR5S31U) IOUT – VOUT VIN = 4.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C 3.0 25 −40 Output voltage VOUT (V) Ta = 85°C 3.1 25 −40 2.9 0 50 100 150 3.0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 9 2003-02-10 TAR5S15U~TAR5S50U (TAR5S32U) 3.3 IOUT – VOUT 3.4 (TAR5S33U) IOUT – VOUT VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Output voltage VOUT (V) Ta = 85°C 3.2 25 Ta = 85°C 3.3 25 −40 −40 3.1 0 50 100 150 3.2 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S35U) 3.6 IOUT – VOUT 4.6 (TAR5S45U) IOUT – VOUT VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Ta = 85°C 3.5 25 Output voltage VOUT (V) Ta = 85°C 4.5 25 −40 −40 3.4 0 50 100 150 4.4 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S48U) 4.9 IOUT – VOUT 5.1 (TAR5S50U) IOUT – VOUT Pulse width = 1 ms VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 6.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Output voltage 圧 VOUT (V) Ta = 85°C 4.8 25 Output voltage VOUT (V) Ta = 85°C 5.0 25 −40 −40 4.7 0 50 100 150 4.9 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 10 2003-02-10 TAR5S15U~TAR5S50U (TAR5S15U) 10 IB – VIN 10 (TAR5S18U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S20U) 10 IB – VIN 10 (TAR5S21U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S22U) 10 IB – VIN 10 (TAR5S23U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) 11 2003-02-10 TAR5S15U~TAR5S50U (TAR5S25U) 10 IB – VIN 10 (TAR5S27U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S28U) 10 IB – VIN 10 (TAR5S29U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S30U) 10 IB – VIN 10 (TAR5S31U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 IOUT = 150 mA 100 50 10 1 15 Input voltage VIN (V) Input voltage VIN (V) 12 2003-02-10 TAR5S15U~TAR5S50U (TAR5S32U) 10 IB – VIN 10 (TAR5S33U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 IOUT = 150 mA 100 50 0 0 5 10 1 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S35U) 10 IB – VIN 10 (TAR5S45U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S48U) 10 IB – VIN 10 CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S50U) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) 13 2003-02-10 TAR5S15U~TAR5S50U (TAR5S15U) 6 VOUT – VIN 6 (TAR5S18U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S20U) 6 VOUT – VIN 6 (TAR5S21U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S22U) 6 VOUT – VIN 6 (TAR5S23U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 14 2003-02-10 TAR5S15U~TAR5S50U (TAR5S25U) 6 VOUT – VIN 6 (TAR5S27U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S28U) 6 VOUT – VIN 6 (TAR5S29U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S30U) 6 VOUT – VIN 6 (TAR5S31U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) 5 10 15 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 15 2003-02-10 TAR5S15U~TAR5S50U (TAR5S32U) 6 VOUT – VIN 6 (TAR5S33U) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 Output voltage VOUT (V) Output voltage VOUT (V) 4 4 3 3 2 2 1 1 0 0 5 10 15 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S35U) 6 VOUT – VIN 6 (TAR5S45U) VOUT – VIN 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 4 3 3 2 2 1 1 IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 0 0 5 10 15 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S48U) 6 VOUT – VIN 6 (TAR5S50U) VOUT – VIN 5 5 Output voltage VOUT (V) 4 Output voltage VOUT (V) IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 4 3 3 2 2 1 1 IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 0 0 5 10 15 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 16 2003-02-10 TAR5S15U~TAR5S50U (TAR5S15U) 1.6 VOUT – Ta 1.9 VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S18U) VOUT – Ta VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 1.55 Output voltage VOUT (V) 1.85 1.5 IOUT = 50 mA 1.8 IOUT = 50 mA 100 150 1.45 100 150 1.75 1.4 −50 −25 0 25 50 75 100 1.7 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S20U) 2.1 VOUT – Ta 2.2 VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S21U) VOUT – Ta VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 2.05 Output voltage VOUT (V) 2.15 2.0 IOUT = 50 mA 2.1 IOUT = 50 mA 100 1.95 150 100 2.05 150 1.9 −50 −25 0 25 50 75 100 2.0 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S22U) 2.3 VOUT – Ta 2.4 VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S23U) VOUT – Ta VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 2.25 Output voltage VOUT (V) 2.35 2.2 IOUT = 50 mA 2.3 IOUT = 50 mA 2.15 100 150 2.25 100 150 2.1 −50 −25 0 25 50 75 100 2.2 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 17 2003-02-10 TAR5S15U~TAR5S50U (TAR5S25U) 2.6 VOUT – Ta 2.8 VIN = 3.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S27U) VOUT – Ta VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 2.55 Output voltage VOUT (V) 2.75 2.5 IOUT = 50 mA 2.7 IOUT = 50 mA 100 2.45 150 100 2.65 150 2.4 −50 −25 0 25 50 75 100 2.6 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S28U) 2.9 VOUT – Ta 3.0 VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S29U) VOUT – Ta VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 2.85 Output voltage VOUT (V) 2.95 2.8 IOUT = 50 mA 2.9 IOUT = 50 mA 100 2.75 150 100 2.85 150 2.7 −50 −25 0 25 50 75 100 2.8 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S30U) 3.1 VOUT – Ta 3.2 VIN = 4 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S31U) VOUT – Ta VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) 3.05 Output voltage VOUT (V) 3.15 3.0 IOUT = 50 mA 3.1 IOUT = 50 mA 2.95 100 150 3.05 100 150 2.9 −50 −25 0 25 50 75 100 3.0 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 18 2003-02-10 TAR5S15U~TAR5S50U (TAR5S32U) 3.3 VOUT – Ta 3.4 VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S33U) VOUT – Ta VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Output voltage VOUT (V) 3.25 3.35 3.2 IOUT = 50 mA 3.3 IOUT = 50 mA 3.15 100 150 3.25 100 150 3.1 −50 −25 0 25 50 75 100 3.2 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S35U) 3.6 VOUT – Ta 4.6 VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S45U) VOUT – Ta VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms Output voltage VOUT (V) Output voltage VOUT (V) 3.55 4.55 3.5 IOUT = 50 mA 4.5 IOUT = 50 mA 3.45 100 150 4.45 100 150 3.4 −50 −25 0 25 50 75 100 4.4 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S48U) 4.9 VOUT – Ta 5.1 VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S50U) VOUT – Ta VIN = 6 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms Output voltage VOUT (V) 4.85 Output voltage VOUT (V) 5.05 4.8 IOUT = 50 mA 5 IOUT = 50 mA 4.75 100 150 4.95 100 150 4.7 −50 −25 0 25 50 75 100 4.9 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 19 2003-02-10 TAR5S15U~TAR5S50U IB – Ta 3 VIN = VOUT + 1 V, CIN = 1 µF, 2.5 0.6 COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S23U~TAR5S50U) CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN - VOUT – Ta Dropout voltage VIN - VOUT (V) IOUT = 150 mA 0.5 IB (mA) 2 0.4 IOUT = 150 mA 0.3 100 0.2 50 0.1 10 1 0 −50 −25 Bias current 1.5 100 1 50 0.5 10 1 0 −50 −25 0 25 50 75 100 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S23U~TAR5S50U) VIN - VOUT – IOUT 0.5 CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01µF Pulse width = 1 ms 2.5 VIN = VOUT + 1 V, IB – IOUT CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms Ta = 25°C Dropout voltage VIN - VOUT (V) 0.4 Ta = 25°C 0.3 −40 0.2 (mA) 85 2.0 −40 Bias current IB 1.5 1.0 85 0.1 0.5 0 0 50 100 150 0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) Turn On Waveform 3 3 Turn Off Waveform VIN = VOUT + 1 V, VCT (ON) = 1.5 → 0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 1 Control voltage waveform 0 3 0.01 µF Control voltage VCT (ON) (V) 2 1 0 3 −40 Control voltage VCT (ON) (V) Output voltage VOUT (V) Control voltage waveform 2 Output voltage waveform Output voltage VOUT (V) 2 85 1 0 Ta = 25°C VIN = VOUT + 1 V, VCT (ON) = 0 → 1.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0 1 0.01 µF 2 1 0 Output voltage waveform 0 1 Time t (ms) Time t (ms) 20 2003-02-10 TAR5S15U~TAR5S50U VN – f 10 VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, 10 Hz < f < 100 kHz, Ta = 25°C 1 80 Ripple Rejection – f TAR5S25U (2.5 V) 70 60 TAR5S30U (3.0 V) TAR5S15U (1.5 V) Output noise voltage VN (µV/√ Hz ) Ripple rejection (dB) 50 40 30 20 TAR5S45U (4.5 V) TAR5S50U (5.0 V) TAR5S35U (3.5 V) 0.1 0.01 VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF, 10 COUT = 10 µF, CNOISE = 0.01 µF, VRipple = 500 mVp-p, Ta = 25°C 0.001 10 100 1k 10 k 100 k 0 10 100 1k 10 k 100 k 1000 k Frequency f (Hz) Frequency f (Hz) PD – Ta 500 (mW) Power dissipation PD 400 300 200 Circuit board material: glass epoxy, Circuit board dimention: 30 mm × 30 mm, 2 pad area: 35 mm (t = 0.8 mm) 0 40 80 120 100 −40 Ambient temperature Ta (°C) 21 2003-02-10 TAR5S15U~TAR5S50U Package Dimensions Weight: 0.007 g (typ.) 22 2003-02-10 TAR5S15U~TAR5S50U RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 23 2003-02-10