TAR5S30

TAR5S15~TAR5S50 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15, TAR5S18, TAR5S20, TAR5S21, TAR5S22, TAR5S23, TAR5S25, TAR5S27, TAR5S28, TAR5S29, TAR5S30, TAR5S31, TAR5S32, TAR5S33, TAR5S35, TAR5S45, TAR5S48, TAR5S50 Point Regulators (Low-Dropout Regulator) The TAR5Sxx Series is comprised of general-purpose bipolar single-power-supply devices incorporating a control pin which can be used to turn them ON/OFF. Overtemperature and overcurrent protection circuits are built into the devices’ output circuit. Features • • • • • • • Low stand-by current Overtemperature/overcurrent protection Operation voltage range is wide. Maximum output current is high. Difference between input voltage and output voltage is low. Small package. Ceramic capacitors can be used. W eight: 0.014 g (typ.) Pin Assignments (top view) VIN 5 VOUT 4 1 2 CONTROL GND 3 NOISE Overtemperature protection and overcurrent protection functions are not necessary guarantee of operating ratings below the maximum ratings. Do not use devices under conditions in which their maximum ratings will be exceeded. 000707EBA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The products described in this document are subject to the foreign exchange and foreign trade laws. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 2000-10-30 1/22 TAR5S15~TAR5S50 List of Products Number and Marking Products No. TAR5S15 TAR5S18 TAR5S20 TAR5S21 TAR5S22 TAR5S23 TAR5S25 TAR5S27 TAR5S28 TAR5S29 TAR5S30 TAR5S31 TAR5S32 TAR5S33 TAR5S35 TAR5S45 TAR5S48 TAR5S50 Marking 1V5 1V8 2V0 2V1 2V2 2V3 2V5 2V7 2V8 2V9 3V0 3V1 3V2 3V3 3V5 4V5 4V8 5V0 Marking on the Product Example: TAR5S30 (3.0 V output) 3V0 Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Output current Power dissipation Operation temperature range Storage temperature range Symbol VIN IOUT PD Topr Tstg Rating 15 200 200 380 −40 to 85 −55 to 150 (Note1) (Note2) °C °C Unit V mA mW Note1: Unit Ratintg Note2: Mounted on a glass epoxy circuit board of 30 × 30 mm. Pad dimension of 50 mm 2 2000-10-30 2/22 TAR5S15~TAR5S50 TAR5S15~TAR5S22 Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Characteristics Output voltage Line regulation Load regulation Quiescent current Stand-by current Output noise voltage Temperature coefficient Input voltage Ripple rejection Control voltage (ON) Control voltage (OFF) Control current (ON) Control current (OFF) Symbol VOUT Reg･line Reg･load IB1 IB2 IB (OFF) VNO TCVO VIN R.R. VCT (ON) VCT (OFF) ICT (ON) ICT (OFF) VCT = 1.5 V VCT = 0 V Test Condition Min Typ. Max Unit Please refer to the Output Voltage Accuracy table. VOUT + 1 V < VIN < 15 V, = = IOUT = 1 mA 1 mA < IOUT < 150 mA = = IOUT = 0 mA IOUT = 50 mA VCT = 0 V VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < f < 100 kHz, == CNOISE = 0.01 µF, Ta = 25°C −40°C < Topr < 85°C = =  VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 µF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C          2.4  1.5    3 25 170 550  30 100  70   3 0 15 75  850 0.1   15  VIN 0.4 10 0.1 mV mV µA µA µVrms ppm/°C V dB V V µA µA TAR5S23~TAR5S50 Electrical Characteristic (unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Characteristics Output voltage Line regulation Load regulation Quiescent current Stand-by current Output noise voltage Dropout volatge Temperature coefficient Input voltage Symbol VOUT Reg･line Reg･load IB1 IB2 IB (OFF) VNO VIN − VOUT TCVO VIN R.R. VCT (ON) VCT (OFF) ICT (ON) ICT (OFF) VCT = 1.5 V VCT = 0 V Test Condition Min Typ. Max Unit Please refer to the Output Voltage Accuracy table. VOUT + 1 V < VIN < 15 V, = = IOUT = 1 mA 1 mA < IOUT < 150 mA = = IOUT = 0 mA IOUT = 50 mA VCT = 0 V VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz < f < 100 kHz, == CNOISE = 0.01 µF, Ta = 25°C IOUT = 50 mA −40°C < Topr < 85°C = =  VIN = VOUT + 1 V, IOUT = 10 mA, CNOISE = 0.01 µF, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C           VOUT + 0.2 V  1.5    3 25 170 550  30 130 100  70   3 0 15 75  850 0.1  200  15  VIN 0.4 10 0.1 mV mV µA µA µVrms mV ppm/°C V Ripple rejection Control voltage (ON) Control voltage (OFF) Control current (ON) Control current (OFF) dB V V µA µA 2000-10-30 3/22 TAR5S15~TAR5S50 Output Voltage Accuracy (VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Tj = 25°C) Product No. TAR5S15 TAR5S18 TAR5S20 TAR5S21 TAR5S22 TAR5S23 TAR5S25 TAR5S27 TAR5S28 TAR5S29 TAR5S30 TAR5S31 TAR5S32 TAR5S33 TAR5S35 TAR5S45 TAR5S48 TAR5S50 VOUT Symbol Min 1.44 1.74 1.94 2.04 2.14 2.24 2.43 2.63 2.73 2.83 2.92 3.02 3.12 3.21 3.41 4.38 4.68 4.87 Typ. 1.5 1.8 2.0 2.1 2.2 2.3 2.5 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.5 4.5 4.8 5.0 Max 1.56 1.86 2.06 2.16 2.26 2.36 2.57 2.77 2.87 2.97 3.08 3.18 3.28 3.39 3.59 4.62 4.92 5.13 V Unit 2000-10-30 4/22 TAR5S15~TAR5S50 Application Note 1. Recommended Application Circuit VIN 10 µF 5 4 Control Level HIGH LOW 1 2 3 0.01 µF Operation ON OFF NOISE VIN CIN VOUT 1 µF VOUT CONTROL GND The figure above shows the recommended configuration for using a point regulator. Insert a capacitor for stable input/output operation. If the control function is not to be used, Toshiba recommend that the control pin (pin 1) be connected to the VCC pin. 2. Power Dissipation The power dissipation for board-mounted TAR5Sxx Series devices (rated at 380 mW) is measured using a board whose size and pattern are as shown below. When incorporating a device belonging to this series into your design, derate the power dissipation as far as possible by reducing the levels of parameters such as input voltage, output current and ambient temperature. Toshiba recommend that these devices should typically be derated to 70%~80% of their absolute maximum power dissipation value. Thermal Resistance Evaluation Board COUT CNOISE Circuit board material: glass epoxy, Circuit board dimension:30 mm × 30 mm, Copper foil pad area: 50 mm (t = 0.8 mm) 2 CONTROL GND NOISE 2000-10-30 5/22 TAR5S15~TAR5S50 3. Ripple Rejection The devices of the TAR5Sxx Series feature a circuit with an excellent ripple rejection characteristic. Because the circuit also features an excellent output fluctuation characteristic for sudden supply voltage drops, the circuit is ideal for use in the RF blocks incorporated in all mobile telephones. Ripple Rejection − f 80 70 60 50 40 30 20 10 0 10 10 µF 2.2 µF 1 µF Input voltage TAR5S28 Input Transient Response Ripple rejection (dB) 3.4 V 3.1 V 2.8 V Output voltage VIN = 4.0 V, CNOISE = 0.01 µF, CIN = 1 µF, Vripple = 500 mVp−p, Iout = 10 mA, Ta = 25°C 100 1k 10 k 100 k 300 k 0 1 2 3 4 Ta = 25°C, CIN = 1 µF, Cout = 10 µF, CNOISE = 0.01 µF, VIN: 3.4 V → 3.1 V, Iout = 50 mA 5 6 7 8 9 10 Frequency f (Hz) Time t (ms) 4. NOISE Pin TAR5Sxx Series devices incorporate a NOISE pin to reduce output noise voltage. Inserting a capacitor between the NOISE pin and GND reduces output noise. To ensure stable operation, insert a capacitor of 0.0047 µF or more between the NOISE pin and GND. The output voltage rise time varies according to the capacitance of the capacitor connected to the NOISE pin. CNOISE − VN 60 CIN = 1 µF, Cout = 10 µF, Iout = 10 mA, Ta = 25°C 2 Control voltage waveform Turn On Waveform Control voltage VCT (ON) (V) (µV) 50 1 Output noise voltage VN 40 0 CNOISE = 0.01 µF Output voltage waveform 30 3 Output voltage VOUT (V) 20 TAR5S50 TAR5S30 2 0.1 µF 1 µF 0.33 µF 10 TAR5S15 1 CIN = 1 µF, Cout = 10 µF, 0 −10 Iout = 50 mA, Ta = 25°C 0 10 20 30 40 50 60 70 80 90 0 0.001 µ 0.01 µ 0.1 µ 1.0 µ NOISE capacitance CNOISE (F) Time t (ms) 2000-10-30 6/22 TAR5S15~TAR5S50 5. Example of Characteristics when Ceramic Capacitor is Used Shown below is the stable operation area, where the output voltage does not oscillate, evaluated using a Toshiba evaluation circuit. The equivalent series resistance (ESR) of the output capacitor and output current determines this area. TAR5Sxx Series devices operate stably even when a ceramic capacitor is used as the output capacitor. If a ceramic capacitor is used as the output capacitor and the ripple frequency is 30 kHz or more, the ripple rejection differs from that when a tantalum capacitor is used. This is shown below. Toshiba recommend that users check that devices operate stably under the intended conditions of use. Examples of safe operating area characteristics (TAR5S15) Stable Operating Area 100 100 (TAR5S50) Stable Operating Area (Ω) Equivalent series resistance ESR (Ω) 10 Equivalent series resistance ESR 10 Stable Operating Area 1 1 Stable Operating Area @VIN = 2.5 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 20 40 60 80 100 120 140 150 0.1 0.1 @VIN = 6.0 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 20 40 60 80 100 120 140 150 0.02 0 0.02 0 Output current IOUT (mA) Output current IOUT (mA) (TAR5S28) Stable Operating Area 100 Evaluation Circuit for Stable Operating Area CONTROL Equivalent series resistance ESR (Ω) 10 TAR5S** Stable Operating Area 1 CNOISE = 0.01 µF COUT Ceramic VIN = VOUT +1V CIN Ceramic GND ESR ROUT 0.1 @VIN = 3.8 V, CNOISE = 0.01 µF, CIN = 1 µF, Cout = 1 µF~10 µF, Ta = 25°C 20 40 60 80 100 120 140 150 0.02 0 Capacitors used for evaluation Made by Murata CIN: GRM40B105K COUT: GRM40B105K/GRM40B106K Output current IOUT (mA) Ripple Rejection Characteristic (f = 10 kHz~300 kHz) (TAR5S30) Ripple Rejection – f 70 Ceramic 10 µF 60 Tantalum10 µF Ceramic 2.2 µF Ceramic 1 µF Ripple rejection (dB) 50 40 30 Tantalum 2.2 µF Tantalum 1 µF 20 @VIN = 4.0 V, CNOISE = 0.01 µF, 10 0 10 k CIN = 1 µF, Vripple = 500 mVp-p, Iout = 10 mA, Ta = 25°C 100 k 300 k 1000 k Frequency f (Hz) 2000-10-30 7/22 TAR5S15~TAR5S50 (TAR5S15) 1.6 IOUT – VOUT 1.9 (TAR5S18) IOUT – VOUT VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C 25 1.5 −40 Output voltage VOUT (V) T a = 8 5 °C 25 1.8 −40 1.4 0 50 100 150 1.7 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S20) 2.1 IOUT – VOUT 2.2 (TAR5S21) IOUT – VOUT VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C 2.0 25 −40 Output voltage VOUT (V) T a = 8 5 °C 2.1 25 −40 1.9 0 50 100 150 2.0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S22) 2.3 IOUT – VOUT (TAR5S23) IOUT – VOUT VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C 2.2 25 −40 Output voltage VOUT (V) T a = 8 5 °C 2.3 25 −40 2.1 0 50 100 150 2.2 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 2000-10-30 8/22 TAR5S15~TAR5S50 (TAR5S25) 2.6 IOUT – VOUT 2.8 (TAR5S27) IOUT – VOUT VIN = 2.6 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C Output voltage VOUT (V) T a = 8 5 °C 2.7 25 −40 2.5 25 −40 2.4 0 50 100 150 2.6 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S28) 2.9 IOUT – VOUT 3 (TAR5S29) IOUT – VOUT VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (V) Output voltage VOUT Output voltage VOUT (V) Ta = 85°C 2.8 25 −40 T a = 8 5 °C 2.9 25 −40 2.7 0 50 100 150 2.8 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S30) 3.1 IOUT – VOUT 3.2 (TAR5S31) IOUT – VOUT VIN = 4.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C 3.0 25 −40 Output voltage VOUT (V) T a = 8 5 °C 3.1 25 −40 2.9 0 50 100 150 3.0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 2000-10-30 9/22 TAR5S15~TAR5S50 (TAR5S32) 3.3 IOUT – VOUT 3.4 (TAR5S33) IOUT – VOUT VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Output voltage VOUT (V) Ta = 85°C 3.2 25 T a = 8 5 °C 3.3 25 −40 −40 3.1 0 50 100 150 3.2 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S35) 3.6 IOUT – VOUT 4.6 (TAR5S45) IOUT – VOUT VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) Output voltage VOUT Ta = 85°C 3.5 25 Output voltage VOUT (V) T a = 8 5 °C 4.5 25 −40 −40 3.4 0 50 100 150 4.4 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) (TAR5S48) 4.9 IOUT – VOUT 5.1 (TAR5S50) IOUT – VOUT VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN = 6.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (V) VOUT Ta = 85°C 4.8 25 Output voltage VOUT (V) T a = 8 5 °C 5.0 25 Output voltage 圧 −40 −40 4.7 0 50 100 150 4.9 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) 2000-10-30 10/22 TAR5S15~TAR5S50 (TAR5S15) 10 IB – VIN 10 (TAR5S18) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S20) 10 IB – VIN 10 (TAR5S21) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S22) 10 IB – VIN 10 (TAR5S23) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 11/22 TAR5S15~TAR5S50 (TAR5S25) 10 IB – VIN 10 (TAR5S27) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S28) 10 IB – VIN 10 (TAR5S29) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S30) 10 IB – VIN 10 (TAR5S31) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 IOUT = 150 mA 100 50 10 1 15 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 12/22 TAR5S15~TAR5S50 (TAR5S32) 10 IB – VIN 10 (TAR5S33) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S35) 10 IB – VIN 10 (TAR5S45) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) (TAR5S48) 10 IB – VIN 10 CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S50) IB – VIN CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (mA) Bias current IB 5 Bias current IB IOUT = 150 mA 100 50 1 15 (mA) 5 IOUT = 150 mA 100 50 0 0 5 10 1 15 0 0 5 10 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 13/22 TAR5S15~TAR5S50 (TAR5S15) 6 VOUT – VIN 6 (TAR5S18) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S20) 6 VOUT – VIN 6 (TAR5S21) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S22) 6 VOUT – VIN 6 (TAR5S23) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 14/22 TAR5S15~TAR5S50 (TAR5S25) 6 VOUT – VIN 6 (TAR5S27) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S28) 6 VOUT – VIN 6 (TAR5S29) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S30) 6 VOUT – VIN 6 (TAR5S31) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 15/22 TAR5S15~TAR5S50 (TAR5S32) 6 VOUT – VIN 6 (TAR5S33) VOUT – VIN IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 5 5 (V) Output voltage VOUT 4 Output voltage VOUT 5 10 15 (V) 4 3 3 2 2 1 1 0 0 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S35) 6 VOUT – VIN 6 (TAR5S45) VOUT – VIN 5 5 (V) Output voltage VOUT 4 Output voltage VOUT IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 4 3 3 2 2 1 1 IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 0 0 5 10 15 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) (TAR5S48) 6 VOUT – VIN 6 (TAR5S50) VOUT – VIN 5 5 (V) Output voltage VOUT 4 Output voltage VOUT IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 4 3 3 2 2 1 1 IOUT = 1 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms 0 0 5 10 15 0 0 5 10 15 Input voltage VIN (V) Input voltage VIN (V) 2000-10-30 16/22 TAR5S15~TAR5S50 (TAR5S15) 1.6 VOUT – Ta 1.9 VIN = 2.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S18) VOUT – Ta VIN = 2.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 1.55 (V) IOUT = 50 mA 1.85 Output voltage VOUT Output voltage VOUT 1.5 1.8 IOUT = 50 mA 100 1.45 150 100 1.75 150 1.4 −50 −25 0 25 50 75 100 1.7 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S20) 2.1 VOUT – Ta 2.2 VIN = 3.0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S21) VOUT – Ta VIN = 3.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 2.05 (V) IOUT = 50 mA 2.15 Output voltage VOUT Output voltage VOUT 2.0 2.1 IOUT = 50 mA 100 1.95 150 100 2.05 150 1.9 −50 −25 0 25 50 75 100 2.0 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S22) 2.3 VOUT – Ta 2.4 VIN = 3.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S23) VOUT – Ta VIN = 3.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 2.25 (V) IOUT = 50 mA 2.35 Output voltage VOUT Output voltage VOUT 2.2 2.3 IOUT = 50 mA 2.15 100 150 2.25 100 150 2.1 −50 −25 0 25 50 75 100 2.2 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 2000-10-30 17/22 TAR5S15~TAR5S50 (TAR5S25) 2.6 VOUT – Ta 2.8 VIN = 3.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S27) VOUT – Ta VIN = 3.7 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 2.55 (V) IOUT = 50 mA 2.75 Output voltage VOUT 2.5 Output voltage VOUT 2.7 IOUT = 50 mA 100 2.45 150 100 2.65 150 2.4 −50 −25 0 25 50 75 100 2.6 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S28) 2.9 VOUT – Ta 3.0 VIN = 3.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S29) VOUT – Ta VIN = 3.9 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 2.85 (V) Output voltage VOUT 2.95 Output voltage VOUT 2.8 IOUT = 50 mA 2.9 IOUT = 50 mA 100 2.75 150 100 2.85 150 2.7 −50 −25 0 25 50 75 100 2.8 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S30) 3.1 VOUT – Ta 3.2 VIN = 4 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S31) VOUT – Ta VIN = 4.1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 3.05 (V) Output voltage VOUT 3.15 Output voltage VOUT 3.0 IOUT = 50 mA 3.1 IOUT = 50 mA 2.95 100 150 3.05 100 150 2.9 −50 −25 0 25 50 75 100 3.0 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 2000-10-30 18/22 TAR5S15~TAR5S50 (TAR5S32) 3.3 VOUT – Ta 3.4 VIN = 4.2 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S33) VOUT – Ta VIN = 4.3 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 3.25 (V) IOUT = 50 mA 3.35 Output voltage VOUT 3.2 Output voltage VOUT 3.3 IOUT = 50 mA 3.15 100 150 3.25 100 150 3.1 −50 −25 0 25 50 75 100 3.2 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S35) 3.6 VOUT – Ta 4.6 VIN = 4.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (TAR5S45) VOUT – Ta VIN = 5.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, Pulse width = 1 ms (V) 3.55 (V) Output voltage VOUT IOUT = 50 mA 4.55 Output voltage VOUT 3.5 4.5 IOUT = 50 mA 3.45 100 150 4.45 100 150 3.4 −50 −25 0 25 50 75 100 4.4 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S48) 4.9 VOUT – Ta 5.1 VIN = 5.8 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S50) VOUT – Ta VIN = 6 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (V) 4.85 (V) Output voltage VOUT 5.05 Output voltage VOUT 4.8 IOUT = 50 mA 5 IOUT = 50 mA 4.75 100 150 4.95 100 150 4.7 −50 −25 0 25 50 75 100 4.9 −50 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 2000-10-30 19/22 TAR5S15~TAR5S50 IB – Ta 3 0.6 VIN = VOUT + 1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms (TAR5S23~TAR5S50) CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms VIN - VOUT – Ta 2.5 (V) Dropout voltage VIN - VOUT IOUT = 150 mA 0.5 (mA) 2 0.4 IOUT = 150 mA 0.3 100 0.2 50 0.1 10 1 0 −50 −25 IB 1.5 Bias current 100 1 50 0.5 10 1 0 −50 −25 0 25 50 75 100 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) (TAR5S23~TAR5S50) 0.5 CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01µF Pulse width = 1 ms VIN - VOUT – IOUT 2.5 IB – IOUT VIN = VOUT + 1 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF Pulse width = 1 ms T a = 2 5 °C −40 (V) 0.4 Dropout voltage VIN - VOUT Ta = 25°C 0.3 −40 0.2 (mA) Bias current IB 1.5 85 2.0 1.0 85 0.1 0.5 0 0 50 100 150 0 0 50 100 150 Output current IOUT (mA) Output current IOUT (mA) Turn On Waveform 3 3 Turn Off Waveform Control voltage VCT (ON) (V) VIN = VOUT + 1 V, VCT (ON) = 1.5 → 0 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF 1 Control voltage waveform 0 3 Control voltage VCT (ON) (V) 2 1 0 3 −40 Control voltage waveform 2 Output voltage waveform Output voltage VOUT (V) 2 85 1 0 Output voltage VOUT (V) Ta = 25°C VIN = VOUT + 1 V, VCT (ON) = 0 → 1.5 V, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF 0 1 2 1 0 Output voltage waveform 0 1 Time t (ms) Time t (ms) 2000-10-30 20/22 TAR5S15~TAR5S50 VN – f 10 VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF, COUT = 10 µF, CNOISE = 0.01 µF, 10 Hz < f < 100 kHz, Ta = 25°C 80 Ripple Rejection – f TAR5S25 (2.5 V) 70 60 50 40 30 20 VIN = VOUT + 1 V, IOUT = 10 mA, CIN = 1 µF, 10 COUT = 10 µF, CNOISE = 0.01 µF, VRipple = 500 mVp-p, Ta = 25°C 0 10 100 1k 10 k 100 k TAR5S45 (4.5 V) TAR5S50 (5.0 V) TAR5S35 (3.5 V) TAR5S30 (3.0 V) TAR5S15 (1.5 V) (µV/√ Hz ) Output noise voltage VN 0.1 0.01 Ripple rejection (dB) 1 1000 k 0.001 10 100 1k 10 k 100 k Frequency f (Hz) Frequency f (Hz) PD – Ta 400 ① (mW) Power dissipation PD 300 200 ② 100 ① Circuit board material: glass epoxy, Circuit board dimention: 30 mm × 30 mm, pad area: 50 mm2 (t = 0.8 mm) ② Unit 0 40 80 120 0 −40 Ambient temperature Ta (°C) 2000-10-30 21/22 TAR5S15~TAR5S50 Package Dimensions W eight: 0.014 g (typ.) 2000-10-30 22/22