TAR5S33UTE85LF

TAR5S15U to TAR5S50U TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TAR5S15U to TAR5S50U Point Regulators (Low-Dropout Regulators) The TAR5SxxU Series consists of general-purpose bipolar LDO regulators with an on/off control pin and features overtemperature and overcurrent protection circuits. Features  Low standby current  Overtemperature and overcurrent protections  Wide operating voltage range  High maximum output current  Low input-to-output voltage differential  Small package (UFV package similar to SOT-353)  Allows use of ceramic capacitors as the input and output capacitors. SON5-P-0202-0.65 (UFV) Weight: 0.007 g (typ.) Pin Assignment (Top View) VIN VOUT 5 4 1 2 CONTROL GND 3 NOISE The overtemperature and overcurrent protection features are not intended to guarantee correct operation below the absolute maximum ratings. Do not use the TAR5SxxU under conditions where the absolute maximum ratings may be exceeded. Start of commercial production 2001-08 © 2022 Toshiba Electronic Devices & Storage Corporation 1 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U List of Part Numbers and Markings Part Marking Part No. Marking Part No. Marking TAR5S15U 1V5 TAR5S33U 3V3 TAR5S16U 1V6 TAR5S34U 3V4 TAR5S17U 1V7 TAR5S35U 3V5 TAR5S18U 1V8 TAR5S36U 3V6 TAR5S19U 1V9 TAR5S37U 3V7 TAR5S20U 2V0 TAR5S38U 3V8 TAR5S21U 2V1 TAR5S39U 3V9 TAR5S22U 2V2 TAR5S40U 4V0 TAR5S23U 2V3 TAR5S41U 4V1 TAR5S24U 2V4 TAR5S42U 4V2 TAR5S25U 2V5 TAR5S43U 4V3 TAR5S26U 2V6 TAR5S44U 4V4 TAR5S27U 2V7 TAR5S45U 4V5 TAR5S28U 2V8 TAR5S46U 4V6 TAR5S29U 2V9 TAR5S47U 4V7 TAR5S30U 3V0 TAR5S48U 4V8 TAR5S31U 3V1 TAR5S49U 4V9 TAR5S32U 3V2 TAR5S50U 5V0 Example: TAR5S30U (3.0-V output) 3V0 Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Rating Unit Supply Voltage VIN 15 V Output Current IOUT 200 mA Power Dissipation PD 450 Operation Temp. Range Topr 40 to 85 °C Storage Temp. Range Tstg 55 to 150 °C (Note 1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 30 mm  30 mm; Pad dimension of 35 mm2 © 2022 Toshiba Electronic Devices & Storage Corporation 2 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U TAR5S15U to TAR5S22U Electrical Characteristic (unless otherwise specified, VIN  VOUT  1 V, IOUT  50 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Tj  25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage VOUT Line regulation Reg･line VOUT  1 V  VIN  15 V, IOUT  1 mA  3 15 mV Load regulation Reg･load 1 mA  IOUT  150 mA  25 75 mV IB1 IOUT  0 mA  170  IB2 IOUT  50 mA  550 850 VCT  0 V   0.1 A Quiescent current Standby current IB (OFF) Please refer to the Output Voltage Accuracy table. A Output noise voltage VNO VIN  VOUT  1 V, IOUT  10 mA, 10 Hz  f  100 kHz, CNOISE  0.01 F, Ta  25°C  30  Vrms Temperature coefficient TCVO 40°C  Topr  85°C  100  ppm/°C 2.4  15 V  70  dB  1.5  VIN V  Input voltage VIN Ripple rejection R.R. Control voltage (ON) VCT (ON) Control voltage (OFF) VCT (OFF)  VIN  VOUT  1 V, IOUT  10 mA, CNOISE  0.01 F, f  1 kHz, VRipple  500 mVp-p, Ta  25°C   0.4 V Control current (ON) ICT (ON) VCT  1.5 V  3 10 A Control current (OFF) ICT (OFF) VCT  0 V  0 0.1 A TAR5S23U to TAR5S50U Electrical Characteristic (unless otherwise specified, VIN  VOUT  1 V, IOUT  50 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Tj  25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Output voltage VOUT Line regulation Reg･line VOUT  1 V  VIN  15 V, IOUT  1 mA  3 15 mV Load regulation Reg･load 1 mA  IOUT  150 mA  25 75 mV IB1 IOUT  0 mA  170  IB2 IOUT  50 mA  550 850 VCT  0 V   0.1 A VIN  VOUT  1 V, IOUT  10 mA, 10 Hz  f  100 kHz, CNOISE  0.01 F, Ta  25°C  30  Vrms  130 200 mV  100  ppm/°C VOUT  0.2 V  15 V  70  dB Quiescent current Standby current IB (OFF) Output noise voltage Dropout volatge VNO Please refer to the Output Voltage Accuracy table. VIN  VOUT IOUT  50 mA Temperature coefficient TCVO Input voltage VIN Ripple rejection R.R. 40°C  Topr  85°C  VIN  VOUT  1 V, IOUT  10 mA, CNOISE  0.01 F, f  1 kHz, VRipple  500 mVp-p, Ta  25°C A Control voltage (ON) VCT (ON)  1.5  VIN V Control voltage (OFF) VCT (OFF)    0.4 V Control current (ON) ICT (ON) VCT  1.5 V  3 10 A Control current (OFF) ICT (OFF) VCT  0 V  0 0.1 A © 2022 Toshiba Electronic Devices & Storage Corporation 3 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U Output Voltage Accuracy (VIN  VOUT  1 V, IOUT  50 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Tj  25°C) Part No. Symbol Min Typ. Max TAR5S15U 1.44 1.5 1.56 TAR5S16U 1.54 1.6 1.66 TAR5S17U 1.64 1.7 1.76 TAR5S18U 1.74 1.8 1.86 TAR5S19U 1.84 1.9 1.96 TAR5S20U 1.94 2.0 2.06 TAR5S21U 2.04 2.1 2.16 TAR5S22U 2.14 2.2 2.26 TAR5S23U 2.24 2.3 2.36 TAR5S24U 2.34 2.4 2.46 TAR5S25U 2.43 2.5 2.57 TAR5S26U 2.53 2.6 2.67 TAR5S27U 2.63 2.7 2.77 TAR5S28U 2.73 2.8 2.87 TAR5S29U 2.83 2.9 2.97 TAR5S30U 2.92 3.0 3.08 TAR5S31U 3.02 3.1 3.18 3.12 3.2 3.28 3.21 3.3 3.39 TAR5S34U 3.31 3.4 3.49 TAR5S35U 3.41 3.5 3.59 TAR5S36U 3.51 3.6 3.69 TAR5S37U 3.6 3.7 3.8 TAR5S38U 3.7 3.8 3.9 TAR5S39U 3.8 3.9 4.0 TAR5S40U 3.9 4.0 4.1 TAR5S41U 3.99 4.1 4.21 TAR5S42U 4.09 4.2 4.31 TAR5S43U 4.19 4.3 4.41 TAR5S44U 4.29 4.4 4.51 TAR5S45U 4.38 4.5 4.62 TAR5S46U 4.48 4.6 4.72 TAR5S47U 4.58 4.7 4.82 TAR5S48U 4.68 4.8 4.92 TAR5S49U 4.77 4.9 5.03 TAR5S50U 4.87 5.0 5.13 TAR5S32U TAR5S33U VOUT © 2022 Toshiba Electronic Devices & Storage Corporation Unit V 4 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U Application Notes 1. Recommended Application Circuit VOUT 1 F 10 F VIN 5 2 CONTROL GND CONTROL Operation HIGH ON LOW OFF 3 0.01 F 1 4 NOISE A noise-damping capacitor should be connected between the NOISE pin and GND for stable operation. The recommended value is higher than 0.0047 F. The above figure shows the recommended application circuit for the TAR5SxxU. Capacitors should be connected to VIN and VOUT for input/output stabilization. If on/off control is not required, it is recommended to connect the CONTROL pin (pin 1) to VCC. 2. Power Dissipation The power dissipation rating (450 mW) is measured on a board shown below. More power can be safely dissipated by reducing the input voltage, output current and/or ambient temperature. It is recommended to use the TAR5SxxU at 70% to 80% of the absolute maximum power dissipation. Thermal Resistance Evaluation Board VIN CIN VOUT COUT CNOISE Material: Glass epoxy CONTROL GND NOISE © 2022 Toshiba Electronic Devices & Storage Corporation Dimensions: 30 mm  30 mm Copper pad area: 35 mm2, t  0.8 mm 5 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U 3. Ripple Rejection The TAR5SxxU feature a good power supply ripple rejection and input transient response, making them an ideal solution for the RF block of cell phones. Ripple Rejection  f TAR5S28U Input Transient Response 80 Ripple rejection (dB) 70 10 F 60 Input voltage 3.4 V 50 2.2 F 40 3.1 V 1 F 2.8 V 30 20 10 0 10 100 Output voltage VIN  4.0 V, CNOISE  0.01 F, Ta  25°C, CIN  1 F, CIN  1 F, VRipple  500 mVpp, COUT  10 F, CNOISE  0.01 F, IOUT  10 mA, Ta  25°C VIN: 3.4 V  3.1 V, IOUT  50 mA 1k 10 k Frequency f 0 100 k 300 k 1 2 3 4 5 6 7 8 9 10 Time t (ms) (Hz) 4. NOISE Pin The TAR5SxxU have a pin named NOISE. To reduce the output noise and ensure stable operation, a capacitor should be inserted between the NOISE pin and GND. The capacitance value should be at least 0.0047 F. The output voltage rise time varies with the value of the capacitor connected to the NOISE pin. CNOISE  VN Turn On Waveform (V) 50 Output noise voltage VN CIN  1 F, COUT  10 F, 40 IOUT  10 mA, Ta  25°C Control voltage VCT (ON) (V) 60 20 TAR5S50 TAR5S30 10 0 0.001  Output voltage VOUT (V) 30 TAR5S15 0.01  0.1  NOISE capacitance CNOISE Control voltage waveform 1 0 CNOISE  0.01 F 3 Output voltage waveform 1 F 2 0.33 F 0.1 F 1 CIN  1 F, COUT  10 F, 0 10 1.0  IOUT  50 mA, Ta  25°C 0 10 20 30 40 50 60 70 80 90 Time t (ms) (F) © 2022 Toshiba Electronic Devices & Storage Corporation 2 6 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U 5. Examples of Performance Curves When Ceramic Capacitors Are Used The stable operating area (SOA) is an area where the output voltage does not go into oscillation. The following figures represent the SOA obtained using an evaluation circuit shown below. The SOA is determined by the equivalent series resistance (ESR) of the output capacitor and the output current. The TAR5SxxU provide stable operation even when a ceramic capacitor is used as the output capacitor. If the ripple frequency is 30 kHz or greater, the ripple rejection characteristics differ, depending on the type of the output capacitor (ceramic or tantalum) as shown by the bottom figure on this page. It is recommended to verify that TAR5SxxU operate properly under the intended conditions of use. Examples of Safe Operating Area Characteristics (TAR5S15U) Stable Operating Area (TAR5S50U) Stable Operating Area ESR 10 1 Stable Operating Area @VIN  2.5 V, CNOISE  0.01 F, 0.1 CIN  1 F, COUT  1 F to 10 F, Ta  25°C 0.02 0 20 40 60 80 100 Output current IOUT 120 Equivalent series resistance ESR Equivalent series resistance () 100 () 100 10 Stable Operating Area 1 CIN  1 F, COUT  1 F to 10 F, Ta  25°C 0.02 0 140 150 @VIN  6.0 V, CNOISE  0.01 F, 0.1 (mA) 20 40 60 80 Output current 100 IOUT 120 140 150 (mA) (TAR5S28U) Stable Operating Area Circuit for Stable Operating Area Evaluation Equivalent series resistance ESR () 100 CONTROL 10 CNOISE  0.01 F TAR5S**U Stable Operating Area VIN  VOUT 1V 1 CIN Ceramic GND COUT Ceramic ROUT ESR @VIN  3.8 V, CNOISE  0.01 F, 0.1 CIN  1 F, COUT  1 F to 10 F, Ta  25°C 0.02 0 20 40 60 80 Output current 100 IOUT 120 140 150 Capacitors used for evaluation CIN: Murata GRM40B105K COUT: Murata GRM40B105K / GRM40B106K (mA) Ripple Rejection Characteristic (f  10 kHz to 300 kHz) (TAR5S30U) Ripple Rejection – f 70 Ceramic 10 F Tantalum10 F (dB) 50 Ripple rejection 60 40 Ceramic 2.2 F Ceramic 1 F Tantalum 2.2 F Tantalum 1 F 30 20 @VIN  4.0 V, CNOISE  0.01 F, 10 CIN  1 F, VRipple  500 mVp-p, IOUT  10 mA, Ta  25°C 0 10 k 100 k Frequency f 300 k 1000 k (Hz) © 2022 Toshiba Electronic Devices & Storage Corporation 7 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S15U) IOUT – VOUT (TAR5S18U) 1.6 IOUT – VOUT 1.9 CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) VIN  2.8 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  2.5 V, CIN  1 F, COUT  10 F, Ta  85°C 25 Output voltage 1.8 Output voltage 1.5 Ta  85°C 25 40 1.4 0 50 100 Output current (TAR5S20U) IOUT 1.7 0 150 (mA) 50 100 Output current IOUT – VOUT (TAR5S21U) 2.1 IOUT 150 (mA) IOUT – VOUT 2.2 CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) VIN  3.1 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  3.0 V, CIN  1 F, COUT  10 F, Ta  85°C Ta  85°C Output voltage 2.1 Output voltage 2.0 25 40 1.9 0 50 100 Output current (TAR5S22U) IOUT 25 40 2.0 0 150 (mA) 50 100 Output current (TAR5S23U) IOUT – VOUT 2.3 IOUT 150 (mA) IOUT – VOUT 2.4 VIN  3.3 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) (V) VIN  3.2 V, CIN  1 F, COUT  10 F, Ta  85°C Output voltage Output voltage 2.2 2.1 0 40 25 40 50 Output current 100 IOUT 2.3 25 40 2.2 0 150 50 Output current (mA) © 2022 Toshiba Electronic Devices & Storage Corporation Ta  85°C 8 100 IOUT 150 (mA) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S25U) (TAR5S27U) IOUT – VOUT 2.6 IOUT – VOUT 2.8 CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) VIN  3.7 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  2.6 V, CIN  1 F, COUT  10 F, Ta  85°C Output voltage 2.7 Output voltage 2.5 Ta  85°C 25 40 2.4 0 50 100 Output current (TAR5S28U) IOUT 25 40 2.6 0 150 (mA) 50 100 Output current IOUT – VOUT (TAR5S29U) 2.9 IOUT 150 (mA) IOUT – VOUT 3 CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) VIN  3.9 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  3.8 V, CIN  1 F, COUT  10 F, Ta  85°C Ta  85°C Output voltage 2.9 Output voltage 2.8 25 40 2.7 0 50 100 Output current (TAR5S30U) IOUT 40 2.8 0 150 (mA) 50 100 Output current IOUT – VOUT (TAR5S31U) 3.1 IOUT 150 (mA) IOUT – VOUT 3.2 CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) VIN  4.1 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  4.0 V, CIN  1 F, COUT  10 F, Ta  85°C Ta  85°C Output voltage 3.1 Output voltage 3.0 2.9 0 25 25 40 50 Output current 100 IOUT 3.0 0 150 (mA) © 2022 Toshiba Electronic Devices & Storage Corporation 25 40 50 Output current 9 100 IOUT 150 (mA) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S32U) IOUT – VOUT (TAR5S33U) 3.3 VIN  4.3 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms VOUT VOUT (V) (V) VIN  4.2 V, CIN  1 F, COUT  10 F, Ta  85°C Output voltage Output voltage 3.2 25 40 3.1 0 50 100 Output current (TAR5S35U) IOUT 3.3 25 40 (mA) 50 100 Output current IOUT – VOUT (TAR5S45U) IOUT 150 (mA) IOUT – VOUT 4.6 VIN  5.5 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms VOUT (V) (V) VIN  4.5 V, CIN  1 F, COUT  10 F, VOUT Ta  85°C 3.5 Output voltage Output voltage Ta  85°C 3.2 0 150 3.6 25 40 3.4 0 50 100 Output current (TAR5S48U) IOUT Ta  85°C 4.5 25 40 4.4 0 150 (mA) 50 100 Output current IOUT – VOUT (TAR5S50U) 4.9 IOUT 150 (mA) IOUT – VOUT 5.1 VIN  6.0 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms (V) VIN  5.8 V, CIN  1 F, COUT  10 F, VOUT (V) VOUT Ta  85°C 4.8 Output voltage Output voltage IOUT – VOUT 3.4 25 40 4.7 0 50 Output current 100 IOUT 5.0 25 40 4.9 0 150 50 Output current (mA) © 2022 Toshiba Electronic Devices & Storage Corporation Ta  85°C 10 100 IOUT 150 (mA) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S15U) IB – VIN (TAR5S18U) 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current IB – VIN 10 5 IOUT  150 mA IOUT  150 mA 100 100 1 50 0 0 5 10 Input voltage (TAR5S20U) VIN 10 Input voltage VIN IB – VIN (TAR5S21U) 15 (V) IB – VIN 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current 5 (V) 10 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 (TAR5S22U) VIN 50 1 10 Input voltage 0 0 15 5 (V) IB – VIN (TAR5S23U) 1 10 Input voltage VIN 10 15 (V) IB – VIN 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current 1 50 0 0 15 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 Input voltage 10 VIN 50 1 0 0 15 (V) © 2022 Toshiba Electronic Devices & Storage Corporation 5 10 Input voltage VIN 11 1 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S25U) IB – VIN (TAR5S27U) 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current IB – VIN 10 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 10 Input voltage (TAR5S28U) 1 VIN 10 Input voltage VIN IB – VIN (TAR5S29U) 15 (V) IB – VIN 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current 5 (V) 10 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 (TAR5S30U) 50 1 10 Input voltage VIN 0 0 15 5 IB – VIN (TAR5S31U) 1 10 Input voltage VIN (V) 10 15 (V) IB – VIN 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current 1 50 0 0 15 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 Input voltage 10 VIN 50 1 0 0 15 10 Input voltage VIN (V) © 2022 Toshiba Electronic Devices & Storage Corporation 5 12 1 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S32U) IB – VIN (TAR5S33U) 10 CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms Pulse width  1 ms IB (mA) (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 5 Bias current Bias current IB – VIN 10 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 10 Input voltage (TAR5S35U) VIN 0 0 15 (V) (TAR5S45U) IB – VIN 10 15 (V) IB – VIN 10 Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F Pulse width  1 ms (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F IB 5 Bias current Bias current 5 Input voltage VIN 10 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 (TAR5S48U) 1 10 Input voltage VIN 50 0 0 15 5 (TAR5S50U) IB – VIN 1 10 Input voltage VIN (V) 10 15 (V) IB – VIN 10 CNOISE  0.01 F Pulse width  1 ms Pulse width  1 ms IB (mA) CIN  1 F, COUT  10 F, CNOISE  0.01 F (mA) CIN  1 F, COUT  10 F, IB 5 Bias current Bias current 1 50 1 5 IOUT  150 mA IOUT  150 mA 100 100 50 0 0 5 Input voltage 10 VIN 1 50 0 0 15 (V) © 2022 Toshiba Electronic Devices & Storage Corporation 5 Input voltage VIN 13 10 1 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S15U) 6 VOUT – VIN (TAR5S18U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms 2 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 1 2 1 0 0 5 10 Input voltage (TAR5S20U) 6 VIN 0 0 15 (V) 5 10 Input voltage VIN VOUT – VIN (TAR5S21U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, 15 (V) VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms 2 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 1 2 1 0 0 5 10 Input voltage (TAR5S22U) 6 VIN 0 0 15 (V) 5 10 Input voltage VIN VOUT – VIN (TAR5S23U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms 15 (V) VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms 2 1 0 0 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 2 1 5 Input voltage 10 VIN 0 0 15 (V) © 2022 Toshiba Electronic Devices & Storage Corporation 5 Input voltage VIN 14 10 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S25U) 6 VOUT – VIN (TAR5S27U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms 2 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 1 2 1 0 0 5 10 Input voltage (TAR5S28U) 6 VIN 0 0 15 (V) 5 10 Input voltage VOUT – VIN (TAR5S29U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, VIN 15 (V) VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms 2 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 1 2 1 0 0 5 10 Input voltage (TAR5S30U) 6 VIN 0 0 15 (V) 5 10 Input voltage VOUT – VIN (TAR5S31U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms VIN 15 (V) VOUT – VIN IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms 2 1 0 0 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 5 (V) 5 3 2 1 5 Input voltage 10 VIN 0 0 15 (V) © 2022 Toshiba Electronic Devices & Storage Corporation 5 Input voltage 15 10 VIN 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S32U) 6 VOUT – VIN (TAR5S33U) 6 IOUT  1 mA, CIN  1 F, COUT  10 F, IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms 5 3 2 1 VOUT 4 4 Output voltage (V) 5 (V) 3 2 1 0 0 5 10 Input voltage (TAR5S35U) VIN 0 0 15 (V) 5 10 Input voltage VIN VOUT – VIN (TAR5S45U) 5 5 15 (V) VOUT – VIN 3 2 1 VOUT VOUT 4 Output voltage (V) 6 (V) 6 4 Output voltage VOUT Output voltage VOUT – VIN 3 2 1 IOUT  1 mA, CIN  1 F, COUT  10 F, IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms 0 0 5 10 Input voltage (TAR5S48U) VIN CNOISE  0.01 F, Pulse width  1 ms 0 0 15 (V) 5 10 Input voltage VIN VOUT – VIN (TAR5S50U) 5 5 VOUT – VIN 2 1 VOUT 3 4 Output voltage VOUT 4 Output voltage (V) 6 (V) 6 15 (V) 3 2 1 IOUT  1 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms 0 0 5 Input voltage 10 VIN CNOISE  0.01 F, Pulse width  1 ms 0 0 15 (V) © 2022 Toshiba Electronic Devices & Storage Corporation IOUT  1 mA, CIN  1 F, COUT  10 F, 5 Input voltage VIN 16 10 15 (V) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S15U) VOUT – Ta (TAR5S18U) 1.6 VIN  2.5 V, CIN  1 F, COUT  10 F, VIN  2.8 V, CIN  1 F, COUT  10 F, (V) 100 150 1.45 1.4 50 25 0 25 Ambient temperature (TAR5S20U) 1.85 VOUT IOUT  50 mA 1.5 Output voltage Output voltage CNOISE  0.01 F, Pulse width  1 ms 1.55 VOUT (V) CNOISE  0.01 F, Pulse width  1 ms 50 75 IOUT  50 mA 1.8 100 150 1.75 1.7 50 100 Ta (°C) 25 0 VOUT – Ta (TAR5S21U) 100 Ta (°C) VOUT – Ta (V) CNOISE  0.01 F, Pulse width  1 ms Output voltage IOUT  50 mA 2.0 150 100 1.95 1.9 50 25 0 25 Ambient temperature (TAR5S22U) 2.15 VOUT 2.05 VOUT (V) 75 VIN  3.1 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms Output voltage 50 2.2 VIN  3.0 V, CIN  1 F, COUT  10 F, 50 75 IOUT  50 mA 2.1 Ta (°C) 25 0 VOUT – Ta (TAR5S23U) 100 Ta (°C) VOUT – Ta (V) CNOISE  0.01 F, Pulse width  1 ms 150 100 25 0 2.35 VOUT IOUT  50 mA Output voltage VOUT 75 VIN  3.3 V, CIN  1 F, COUT  10 F, 2.25 2.1 50 50 2.4 CNOISE  0.01 F, Pulse width  1 ms 2.15 25 Ambient temperature VIN  3.2 V, CIN  1 F, COUT  10 F, 2.2 150 100 2.05 2.0 50 100 2.3 (V) 25 Ambient temperature 2.1 Output voltage VOUT – Ta 1.9 25 Ambient temperature 50 75 IOUT  50 mA 150 100 2.25 2.2 50 100 Ta (°C) © 2022 Toshiba Electronic Devices & Storage Corporation 2.3 25 0 25 Ambient temperature 17 50 75 100 Ta (°C) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S25U) VOUT – Ta (TAR5S27U) 2.6 VIN  3.5 V, CIN  1 F, COUT  10 F, VIN  3.7 V, CIN  1 F, COUT  10 F, (V) 100 150 2.45 2.4 50 25 2.75 VOUT IOUT  50 mA 2.5 Output voltage Output voltage CNOISE  0.01 F, Pulse width  1 ms 2.55 VOUT (V) CNOISE  0.01 F, Pulse width  1 ms 0 25 Ambient temperature (TAR5S28U) 50 75 2.7 IOUT  50 mA Ta (°C) 25 0 25 Ambient temperature VOUT – Ta (TAR5S29U) 50 75 100 Ta (°C) VOUT – Ta 3.0 VIN  3.8 V, CIN  1 F, COUT  10 F, VIN  3.9 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) CNOISE  0.01 F, Pulse width  1 ms 2.95 VOUT 2.85 VOUT (V) 150 100 2.65 2.6 50 100 2.9 IOUT  50 mA 2.8 Output voltage Output voltage VOUT – Ta 2.8 150 100 2.75 2.7 50 25 0 25 Ambient temperature (TAR5S30U) 50 75 Ta (°C) 25 0 (TAR5S31U) VOUT – Ta 25 50 75 100 VOUT – Ta 3.2 CNOISE  0.01 F, Pulse width  1 ms (V) VIN  4.1 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  4 V, CIN  1 F, COUT  10 F, VOUT 3.15 VOUT 3.1 IOUT  50 mA 150 100 25 0 IOUT  50 mA Output voltage Output voltage 2.9 50 150 Ambient temperature Ta (°C) 3.05 2.95 100 2.85 2.8 50 100 3.1 3.0 IOUT  50 mA 2.9 3.05 25 Ambient temperature 50 75 3.0 50 100 Ta (°C) © 2022 Toshiba Electronic Devices & Storage Corporation 150 100 25 0 25 Ambient temperature 18 50 75 100 Ta (°C) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U (TAR5S32U) VOUT – Ta (TAR5S33U) 3.3 VOUT – Ta 3.4 VIN  4.2 V, CIN  1 F, COUT  10 F, VIN  4.3 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) (V) CNOISE  0.01 F, Pulse width  1 ms 3.35 VOUT VOUT 3.25 Output voltage 3.15 150 100 3.1 50 25 Output voltage IOUT  50 mA 3.2 0 25 50 Ambient temperature (TAR5S35U) 75 3.3 IOUT  50 mA 3.2 50 100 150 100 3.25 Ta (°C) 25 0 25 Ambient temperature VOUT – Ta (TAR5S45U) 3.6 50 75 100 Ta (°C) VOUT – Ta 4.6 VIN  5.5 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms CNOISE  0.01 F, Pulse width  1 ms (V) VIN  4.5 V, CIN  1 F, COUT  10 F, 4.55 VOUT 3.55 4.5 Output voltage 3.5 IOUT  50 mA 3.45 4.45 150 100 3.4 50 25 0 25 Ambient temperature (TAR5S48U) 50 75 25 Ta (°C) 0 25 Ambient temperature (TAR5S50U) 50 75 100 Ta (°C) VOUT – Ta 5.1 CNOISE  0.01 F, Pulse width  1 ms (V) VIN  6 V, CIN  1 F, COUT  10 F, CNOISE  0.01 F, Pulse width  1 ms (V) VIN  5.8 V, CIN  1 F, COUT  10 F, VOUT 5.05 VOUT 4.85 Output voltage 4.8 Output voltage 150 100 4.4 50 100 VOUT – Ta 4.9 IOUT  50 mA IOUT  50 mA 4.75 5 IOUT  50 mA 4.95 150 150 100 4.7 50 25 100 0 25 Ambient temperature 50 75 4.9 50 100 Ta (°C) © 2022 Toshiba Electronic Devices & Storage Corporation 25 0 25 Ambient temperature 19 50 75 100 Ta (°C) 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U IB – Ta (TAR5S23U~TAR5S50U) 3 VIN  VOUT  1 V, CIN  1 F, (V) IOUT  150 mA 0.5 Dropout voltage VIN - VOUT Pulse width  1 ms 2 1.5 Bias current CNOISE  0.01 F Pulse width  1 ms 0.4 IB (mA) CIN  1 F, COUT  10 F, COUT  10 F, CNOISE  0.01 F 2.5 IOUT  150 mA 0.3 100 1 100 0.2 50 0.5 50 0.1 10 10 1 0 50 25 0 25 50 Ambient temperature 75 1 0 50 100 25 0 25 85 Ta (°C) VIN  VOUT  1 V, Ta  25°C CNOISE  0.01 F 40 Pulse width  1 ms (mA) (V) 100 CIN  1 F, COUT  10 F, 2.0 Ta  25°C 1.5 Bias current IB 0.3 40 0.2 85 1.0 0.1 0.5 0 0 50 100 Output current IOUT 0 0 150 50 Output current (mA) Turn On Waveform Control voltage VCT (ON) (V) 3 2 Control voltage waveform 1 0 Output voltage VOUT (V) Ta  25°C 85 VIN  VOUT  1 V, VCT (ON)  0  1.5 V, CIN  1 F, 0 (mA) VIN  VOUT  1 V, VCT (ON)  1.5  0 V, CIN  1 F, 2 COUT  10 F, CNOISE  0.01 F 1 Control voltage waveform 0 3 2 1 IOUT 150 Output voltage waveform 40 3 100 Turn Off Waveform 3 Control voltage VCT (ON) (V) 75 IB – IOUT 2.5 CIN  1 F, COUT  10 F, CNOISE  0.01F Pulse width  1 ms Dropout voltage VIN - VOUT 0.4 50 Ambient temperature Ta (°C) (TAR5S23U~TAR5S50U) VIN - VOUT – IOUT 0.5 Output voltage VOUT (V) VIN - VOUT – Ta 0.6 2 1 Output voltage waveform 0 COUT  10 F, CNOISE  0.01 F 0 1 Time 0 t (ms) © 2022 Toshiba Electronic Devices & Storage Corporation 1 Time t (ms) 20 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U Ripple Rejection – f VN – f 80 10 TAR5S25U (2.5 V) VIN  VOUT  1 V, IOUT  10 mA, CIN  1 F, COUT  10 F, CNOISE  0.01 F, ) TAR5S30U (3.0 V) TAR5S15U (1.5 V) 70 1 (dB) 60 Ripple rejection Output noise voltage VN (V/ 10 Hz  f  100 kHz, Ta  25°C 0.1 0.01 TAR5S45U (4.5 V) 50 TAR5S50U (5.0 V) 40 TAR5S35U (3.5 V) 30 20 VIN  VOUT  1 V, IOUT  10 mA, CIN  1 F, 10 COUT  10 F, CNOISE  0.01 F, VRipple  500 mVp-p, Ta  25°C 0.001 10 100 1k Frequency f 10 k 0 10 100 k 100 1k Frequency f (Hz) 10 k 100 k 1000 k (Hz) PD – Ta 400 Power dissipation PD (mW) 500 300 200 Circuit board material: glass epoxy, Circuit board dimention: 30 mm  30 mm, pad area: 35 mm2 (t  0.8 mm) 100 40 0 40 Ambient temperature 80 120 Ta (°C) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2022 Toshiba Electronic Devices & Storage Corporation 21 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U Package Dimensions 2.0±0.1 SON5-P-0202-0.65 Weight: 0.007 g (typ.) © 2022 Toshiba Electronic Devices & Storage Corporation 22 2022-08-01 Rev.1.0 TAR5S15U to TAR5S50U RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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