TB6549FG/PG/HQ
TOSHIBA Bi-CMOS Integrated Circuit
Silicon Monolithic
TB6549FG, TB6549PG,TB6549HQ
Full-Bridge Driver IC for DC Motors
The TB6549FG/PG/HQ is a full-bridge driver IC for DC motors
that uses an LDMOS structure for output transistors.
High-efficiency drive is possible through the use of a MOS
process with low ON-resistance and a PWM drive system. Four
modes, CW, CCW, short brake, and stop, can be selected using
IN1 and IN2.
TB6549FG
Features
•
Power supply voltage: 30 V (max)
•
Output current: 3.5 A (max) (FG,PG type)/4.5 A (max) (HQ
type)
•
Low ON-resistance: 1.0 Ω (up + low/typ.)
•
PWM control capability
•
Standby system
•
Function modes: CW/CCW/short brake/stop
•
Built-in overcurrent protection
•
Built-in thermal shutdown circuit
•
Package: HSOP20/DIP16/HZIP25
TB6549PG
TB6549HQ
About solderability, the following conditions were confirmed
(1)Use of Sn-37Pb solder Bath
∙solder bath temperature: 230°C
∙dipping time: 5 seconds
∙the number of times: once
∙use of R-type flux
(2)Use of Sn-3.0Ag-0.5Cu solder Bath
∙solder bath temperature: 245°C
∙dipping time: 5 seconds
∙the number of times: once
∙use of R-type flux
HZIP25-P-1.00F
Weight
HSOP20-P-450-1.00: 0.79 g (typ.)
DIP16-P-300-2.54A: 1.11 g (typ.)
HZIP25-P-1.00F: 7.7g (typ.)
Note: This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,
ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive
mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at
reasonable levels.
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TB6549FG/PG/HQ
Pin Assignment
HSOP20-P-450-1.00
DIP16-P-300-2.54A
VCC
CcpA
VCC
CcpA
NC
CcpB
Vreg
CcpB
Vreg
CcpC
SB
NC
NC
NC
S-GND
(Fin)
S-GND
(Fin)
NC
NC
IN1
PWM
IN2
NC
NC
OUT2
OUT1
CcpC
SB
S-GND
S-GND
S-GND
S-GND
IN1
PWM
IN2
OUT2
OUT1
P-GND
P-GND
HZIP25-P-1.00F
C
c
p
A
C
c
p
B
C N N S N N N I I O N P
c C C - C C C N N U C G
1 2 T
p
G
1
N
C
N
D
D
O P N N N S N N S V V
U W C C C - C C B r c
T M
G
e c
2
N
g
D
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2017-01-26
TB6549FG/PG/HQ
Block Diagram
Some functional blocks, circuits or constants may be omitted or simplified in this block diagram for explanatory purposes.
Vreg
SB
PWM
OUT2
VCC
OUT1
5V
Control logic
OSC
Overcurrent
detecting circuit
TSD
Charge pump circuit
CcpA
CcpB
CcpC
IN1 IN2
S-GND
P-GND
Pin Functions
Pin No.
Pin Name
Functional Description
Remarks
FG
PG
HQ
1
―
―
(NC)
No Connection
2
1
1
CcpA
Capacitor connection pin for charge pump A
Connect a capacitor for charge pump
3
2
2
CcpB
Capacitor connection pin for charge pump B
Connect a capacitor for charge pump
4
3
3
CcpC
Capacitor connection pin for charge pump C
Connect a capacitor for charge pump
5
―
―
(NC)
No Connection
―
6
―
―
(NC)
No Connection
―
7
6
10
IN1
Control signal input 1
Input 0/5-V signal
8
7
11
IN2
Control signal input 2
Input 0/5-V signal
―
9
―
―
(NC)
No Connection
10
8
12
OUT1
Output pin 1
―
11
9
14
P-GND
Power GND
12
10
15
OUT2
Output pin 2
13
―
―
(NC)
No Connection
14
11
16
PWM
PWM control signal input pin
15
―
―
(NC)
No Connection
―
16
―
―
(NC)
No Connection
―
17
14
23
SB
Standby pin
H: Start, L: Standby
18
15
24
Vreg
5 V output pin
Connect a capacitor to S-GND
19
―
―
(NC)
No Connection
20
16
25
VCC
Power supply input pin
FIN
4,5,12,13
6, 20
S-GND
Connect to motor coil pin
―
Connect to motor coil pin
―
Input 0/5-V PWM signal
―
VCC (ope) = 10 to 27 V
―
GND pin
*) (HQ type) 4, 5, 7, 8, 9, 13, 17, 18, 19, 21, 22 ;N.C.
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TB6549FG/PG/HQ
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
VCC
30
V
IO (Pulse)
Output current
IO (DC)
Input voltage
FG, PG
3.5
(Note1)
HQ
4.5
(Note2)
FG, PG
2.0
HQ
3.5
Vin
−0.3 to 5.5
FG
Power dissipation
PG
PD
HQ
A
V
2.5
(Note3)
2.7
(Note4)
3.2
(Note5)
40
(Note6)
W
Operating temperature
Topr
−20 to 85
°C
Storage temperature
Tstg
−55 to 150
°C
Note1:
The absolute maximum ratings must be observed strictly. Make sure that no characteristic listed above ever
exceeds the absolute maximum rating.
Note2:
t = 100 ms
Note3:
This value is obtained for a 115 mm × 75 mm × 1.6 mm PCB mounting with 30% copper area.
Note4:
This value is obtained for a 50 mm × 50 mm × 1.6 mm PCB mounting with 50% copper area.(Glass epoxy
board)
Note5:
IC only.
Note6:
Infinite heat sink.
Operating Ranges (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
VCC
10 to 27
V
PWM frequency
fCLK
100
kHz
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TB6549FG/PG/HQ
Electrical Characteristics (VCC = 24 V, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
ICC1
ICC2
Supply current
ICC3
1
ICC4
Input voltage
Control circuit
Hysteresis
voltage
Input current
Input voltage
Hysteresis
voltage
PWM input circuit
Input current
PWM frequency
Minimum clock
pulse width
Input voltage
Standby circuit
Hysteresis
voltage
Input current
Output ON-resistance
Output leakage current
Diode forward voltage
Internal reference voltage
VINH
VINL
VIN (HYS)
IINH
IINL
VPWMH
VPWML
VPWM(HYS)
IPWMH
IPWML
VINSH
VINSL
VIN (HYS)
IINSH
IINSL
Ron (U + L)
IL (U)
IL (L)
VF (U)
VF (L)
Min
Typ.
Max
Stop mode
―
4
8
CW/CCW mode
―
6
10
Short brake mode
―
4
8
Standby mode
―
1
2
2
―
5.5
0
―
0.8
(Not tested)
―
0.2
―
VIN = 5 V
―
50
75
VIN = 0 V
―
―
5
2
―
5.5
―
―
0.8
(Not tested)
―
0.2
―
VPWM = 5 V
―
50
75
VPWM = 0 V
―
―
5
Duty = 50%
―
―
100
kHz
2
―
―
μs
2
―
5.5
―
―
0.8
(Not tested)
―
0.2
―
VIN = 5 V
―
50
75
VIN = 0 V
―
―
5
IO = 0.2 A
―
1.0
1.75
IO = 1.5 A
―
1.0
1.75
―
―
150
VCC = 30 V
―
―
10
IO = 1.5 A
―
1.3
1.7
IO = 1.5 A
―
1.3
1.7
2
―
1
3
―
3
fPWM
tw(PWM)
Test Condition
3
2
―
1
4
5
6
VCC = 30 V
(Note 1)
Unit
mA
V
μA
V
μA
V
μA
Ω
μA
V
Vreg
4
No load
4.5
5
5.5
V
ISD (OFF)
―
(Not tested)
―
50
―
μs
Charge pump rising time
tONG
7
C1 = 0.22 μF, C2 = 0.01 μF
(Note 2)
―
1
3
ms
Thermal shutdown circuit operating
temperature
TSD
―
(Not tested)
―
160
―
°C
Overcurrent detection offset time
Note 1: Include the current in the circuit.
Note 2: C1 is a capacitor between CcpA and GND. C2 is a capacitor between CcpB and CcpC.
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TB6549FG/PG/HQ
Component Description
1. Control Input/PWM Input Circuit
Vreg
IN1
(IN2, PWM)
Vreg
Surge protection
100 kΩ
•
•
The input signals are shown below. Input at the CMOS and TTL levels can be provided. Note that the
input signals have a hysteresis of 0.2 V (typ.).
VINH: 2 to 5.5 V
VINL: GND to 0.8 V
The PWM input frequency should be 100 kHz or less.
Input/Output Function
Input
Output
IN1
IN2
SB
H
H
H
L
H
H
H
L
H
L
L
H
H/L
H/L
L
•
PWM
OUT1
OUT2
Mode
L
L
Short brake
H
L
H
CW/CCW
L
L
L
Short brake
H
H
L
CCW/CW
L
L
L
Short brake
H
L
H
L
H
L
OFF
(high impedance)
Stop
OFF
(high impedance)
Standby
PWM control function
Motor speed can be controlled by inputting the 0/5-V PWM signal to the PWM pin.
When PWM control is provided, normal operation and short brake operation are repeated.
If the upper and lower power transistors in the output circuit were ON at the same time, a penetrating
current would be produced. To prevent this current from being produced, a dead time of 300 ns (design
target value) is provided in the IC when either of the transistors changes from ON to OFF, or vice versa.
Therefore, PWM control by synchronous rectification is enabled without an OFF time being inserted by
external input. Note that a dead time is also provided in the IC at the time of transition between CW
and CCW or between CW (CCW) and short brake mode, thereby eliminating the need for an OFF time.
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TB6549FG/PG/HQ
VCC
OUT1
VCC
M
OUT1
VCC
M
OUT1
GND
M
GND
PWM ON
t1
GND
PWM ON → OFF
t2 = 300 ns (typ.)
PWM OFF
t3
VCC
OUT1
VCC
M
OUT1
M
GND
GND
PWM OFF → ON
t4 = 300 ns (typ.)
PWM ON
t5
VCC
t1
t5
Output voltage
waveform
(OUT1)
t3
GND
t2
t4
Note: Be sure to set the pin PWM to High when the PWM control function is not used.
2. Standby Circuit
VDD
VDD
SB
100 kΩ
•
All circuits are turned off except the standby circuit and the charge pump circuit under the standby
condition.
•
The input voltage range is shown below. Input at CMOS and TTL level is possible. The input signal has
0.2 V (typ.) hysteresis.
VINSH: 2 to Vreg V
VINSL: GND to 0.8 V
•
Do not attempt to the control the output by inputting PWM signals to the standby pin. Doing so may
cause the output signal to become unstable, resulting in destruction of the IC. (The charge pump circuit
is turned ON/OFF by the switch of the input signal from the standby pin. If the switching cycle is
shorter than 50 ms, the charge pump circuit will not operate with precise timing. Therefore the
switching cycle of the standby pin should be longer than 50 ms.) When the Standby condition is changed
to Operation Mode, set IN1 and IN2 to Low level (Stop Mode) at first. Then switch IN1 and IN2 to High
level when the charge pump circuit reaches the stable condition, i.e., when VcpA is about VCC + 5 V.
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TB6549FG/PG/HQ
3. Internal Constant-Voltage (5 V) Circuit
VCC
VCC
Vreg
•
This IC includes a 5 V power supply for control circuit.
•
A capacitor for prevention of oscillation should be connected to S-GND associated with the pin Vreg.
No other loads should be connected to pin Vreg.
•
This IC has a power monitoring function and turns the output OFF when Vreg goes down to 3.0 V
(design target value) or less. With a hysteresis of 0.3 V (design target value), the output are turned ON
when Vreg again reaches 3.3 V (design target value).
4. Charge Pump Circuit
VCC
CcpA
CcpB
CcpC
•
This IC has a charge pump circuit for driving the gate for the upper power transistor in the output
circuit. A voltage of VCC + 5 V (typ.) is generated by connecting an external capacitor to this IC.
It takes about 2 ms to boost VcpA up VCC + 5 V (typ.) after the switching of the input signal from the
standby pin (while CcpA = 0.22 µF, and CcpB and CcpC are connected through 0.01 µF).
•
The proper capacitance of the external capacitor varies depending on the VCC value. Thus, determine
the constant by referring to the following data. The value of the capacitor between CcpB and CcpC
should be such that, while the motor is being driven, the voltage on the CcpA pin will be kept constant,
typically at VCC + 5 V. (If a reduced VCC level causes the voltage on CcpA to start to fall, please adjust
this capacitance value accordingly.)
•
VCC
Between CcpB and CcpC
Between CcpA and GND
10 V to 20 V
0.01 μF to 0.047 μF
0.22 μF
20 V to 27 V
0.01 μF
0.22 μF
Reference oscillation is performed by using the internal capacitor.
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TB6549FG/PG/HQ
5. Output Circuit
VCC
OUT1
(OUT2)
P-GND
•
This IC uses Nch MOS transistors as the upper and lower transistors in the output circuit.
•
As output Ron is 1 Ω (sum for the upper and lower parts/typ.), this IC is a device of the low-Ron type.
•
The switching characteristics of the output transistors are shown below.
PWM Input
tpLH
Output Voltage
(OUT1/OUT2)
tpHL
90%
90%
50%
50%
10%
10%
tr
tf
Item
Typical Value
tpLH
350
tpHL
800
tr
60
tf
100
Unit
ns
tpLH
tpLH
(350 ns)
(800 ns)
PWM input
Output voltage
tr
(60 ns)
tf
(100 ns)
*: OUT 1, OUT 2; open
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TB6549FG/PG/HQ
6. VCC Power Supply Section
•
The VCC power supply delivers a voltage to the output circuit, charge pump circuit, and internal 5 V
circuit.
•
The operating voltage range is shown below:
VCC (opr.) = 10 to 27 V
•
This IC has a power monitoring function for preventing an output malfunction on power-up. However,
Toshiba recommends that IN1, IN2, and SB be set to the Low level at power-on.
7. GND Sections
•
This IC includes two separate GND sections: S-GND for controlling and P-GND for outputting. Be sure
to short-circuit these two GNDs as close to TB6549 as possible.
8. Power Monitoring Circuit
•
•
This circuit turns the output OFF when Vreg becomes 3.0 V (design target value) or less. At this time,
VCC = 4.6 V (typ.).
With a hysteresis of 0.3 V (design target value), the output turns back ON when Vreg exceeds 3.3 V
(design target value) after this circuit starts operating.
9. Thermal Shutdown (TSD) Circuit
This IC includes a thermal shutdown circuit, which turns the output OFF when the junction temperature
(Tj) exceeds 160°C (typ.). The output turns back ON automatically. The thermal hysteresis is 20°C.
TSD = 160°C (design target value)
∆TSD = 20°C (design target value)
10. Overcurrent Detection (ISD) Circuit
This IC includes a circuit to detect current flowing through the output power transistors. The current limit
is set to 5 A (typ.). The circuit detects a current flowing through each of the four output power transistors.
If the current in any one output power transistor exceeds the set limit, this circuit turns all the outputs
OFF.
This circuit includes a timer that causes the outputs to be OFF for 50 µs (typ.) after detection of an
overcurrent and then turn back ON automatically. If the overcurrent continues to flow, this ON-OFF
operation is repeated. Note that to prevent a malfunction due to a glitch, an insensitive period of 10 µs
(typ.) is provided.
ILIM
Output Current
0
50 μs
(typ.)
10 μs
(typ.)
50 μs
(typ.)
10 μs
(typ.)
Insensitive period
The set limit is 5 A (typ.) as a design target value. The distributions shown below exist because of the
variations in thermal characteristics of different ICs. These distributions should be fully considered in the
motor torque design.
Also, output peak current should be less than 3 A because of the variations below,
Detected current: Approximately from 3.5 to 6.5 A
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TB6549FG/PG/HQ
Test Circuit
1.
ICC1, ICC2, ICC3, ICC4, IINH, IINL, IINSH, IINSL
A
ICC
CcpA CcpB CcpC
5V
Vreg
24V
VCC
PWM
OUT1
5V/0V
A
IN1
TB6549
TB6549P
IIN
5V/0V
A
OUT2
IN2
IIN
5V/0V
A
SB
IINS
•
•
•
•
•
•
•
•
2.
S-GND
P-GND
ICC1: IN1 = 0 V, IN2 = 0 V, SB = 5 V
ICC2: IN1 = 5 V, IN2 = 5 V, SB = 5 V or IN1 = 0 V, IN2 = 5 V, SB = 5 V
ICC3: IN1 = 5 V, IN2 = 5 V, SB = 5 V
ICC4: IN1 = 5 V/0 V, IN2 = 5 V/0 V, SB = 0 V
IINH: IN1 = 5 V, IN2 = 5 V
IINL: IN2 = 0 V, IN2 = 0 V
IINSH: SB = 5 V
IINSL: SB = 0 V
VINH, VINL, VINSH, VINSL
24V
CcpA CcpB CcpC
5V
Vreg
VCC
PWM
OUT1
2V/0.8V
IN1
0.8V/2V
IN2
2V/0.8V
SB
TB6549P
TB6549
OUT2
V
S-GND
•
•
•
V
P-GND
VINH, VINSH: IN1 = IN2 = SB = 2 V. Verify that OUT1 = OUT2 = L.
VINL: IN1 = 0.8 V, IN2 = SB = 2 V. Verify that OUT1 = L, OUT2 = H. IN1 = SB = 2 V, IN2 = 0.8 V. Verify
that OUT1 = OUT2 = L.
VINSL: IN1 = IN2 = 2 V, SB = 0.8 V. Verify that the output function is high impedance.
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TB6549FG/PG/HQ
3.
VPWMH, VPWML, IPWMH, IPWML, fPWM, tw (PWM)
24V
5V/0V
2V/0.8V
100kHz
5V
CcpA CcpB CcpC
A
IPWM
Vreg
VCC
PWM
OUT1
IN1
TB6549
TB6549P
0V
IN2
5V
SB
OUT2
V
S-GND
•
•
•
4.
V
P-GND
VPWMH, VPWML, fPWM: PWM = 2 V/0.8 V, 100 kHz; duty: 50 % (rectangular wave). Verify OUT1.
VPWMH, VPWML: PWM = 5 V or PWM = 0 V.
tw(PWM): PWM = 2 V/0.8 V, 100 kHz; duty: 20 % (2 μs) (2 μs/rectangular wave). Verify OUT1.
Ron (U + L), Vreg
24V
V
CcpA CcpB CcpC
5V
Vreg
→
VCC
IO
V
PWM
OUT1
5V/0V
IN1
0V/5V
IN2
TB6549
TB6549F/P
OUT2
V
5V
SB
S-GND
•
•
↓ IO
P-GND
Ron (U + L): Measure Vds (the sum of upper and lower sides) at IO = 0.2 A, and convert to resistor. Do the
same at IO = 1.5 A. Measured for OUT1 and OUT2.
Vreg: Vreg pin voltage.
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TB6549FG/PG/HQ
5.
IL (U), IL (L)
30V
A
IL(L)
CcpA CcpB CcpC
5V
PWM
0V
IN1
Vreg
VCC
OUT1
TB6549F/P
TB6549
0V
IN2
5V
SB
OUT2
A
S-GND
6.
IL(U)
P-GND
VF (U), VF (L)
24V
V
→
IO
VF(U)
CcpA CcpB CcpC
5V
Vreg
VCC
V
PWM
OUT1
0V
IN1
0V
IN2
5V
SB
TB6549F/P
TB6549
OUT2
S-GND
•
↓ IO
V
VF(L)
P-GND
VF (U), VF (L): IO = 1.5 A.
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TB6549FG/PG/HQ
7.
tONG
24V
V
CcpA CcpB CcpC
5V
Vreg
VCC
PWM
OUT1
0V
IN1
0V
IN2
0V → 5V
SB
TB6549F/P
TB6549
OUT2
S-GND
•
P-GND
tONG: SB = 0 V → 5 V. Measure the time taken to boost the CcpA voltage up to about 29 V (24 V + 5 V).
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TB6549FG/PG/HQ
Characteristics Curves
PD – Ta (TB6549PG)
(1)
(1) When mounted on a PCB
(50 mm × 50 mm × 1.6 mm
glass-epoxy PCB mounting with
50% copper area)
(2) IC only
Thermal resistance
1.8
(2)
1.2
0.6
0
0
40
80
120
160
200
PD
(W)
Infinite heat sink
(Note)
2
No heat sink
50
100
150
200
Ambient temperature Ta (°C)
– Ta (TB6549HQ)
Infinite heat sink
Rθj-c = 1°C/W
②
HEAT SINK (RθHS = 3.5°C/W)
Rθj-c = RθHS = 4.5°C/W
①
60
Power dissipation PD
Note:
50 mm × 50 mm × 1 mm
Fe heat sink
4
0
0
240
Ambient temperature Ta (°C)
80
Rth (j-c) = 13°C/W
Rth (j-a) = 130°C/W
6
(W)
(W)
2.4
Power dissipation PD
PD – Ta (TB6549FG)
Power dissipation PD
3.0
③
IC only
Rθj-a = 39°C/W
①
40
②
20
③
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
External Attachments
Symbol
Use
Recommended
Value
Remarks
0.22 μF
―
C1
Charge pump
C2
Charge pump
C3
Prevention of Vreg oscillation
0.1 μF to 1.0 μF
―
C4
Absorption of power noise
0.1 μF to 1.0 μF
―
C5
Absorption of power noise
50 μF to 100 μF
―
0.01 μF
VCC = 24 V (Note)
0.033 μF
VCC = 12 V (Note)
Note: The recommended values for charge pumps depend on the VCC value. Refer to Component Description 4,
Charge Pump Circuit.
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TB6549FG/PG/HQ
Typical Application Diagram
C3
C1
5V
2/1/1
VDD
GND
Note 4
C2
Note 5
PWM
PWM
14/11/16
PORT1
7/6/10
IN1
PORT2
8/7/11
IN2
PORT3
17/14/23
SB
3/2/2
Note1 Fuse
C5
C4
CcpA CcpB CcpC
Vreg VCC
OUT1
10/8/12
TB6549
M
OUT2
S-GND
12/10/15
Note 2
P-GND
FIN/4,5,12,13/6, 20
11/9/14
Note 6
Microcontroller
24V
18/15/24 20/16/25
4/3/3
Note 3
TB6549FG/TB6549PG/TB6549HQ
TB6549FG: Pins 1, 5, 6, 9, 13, 15, 16, and 19 are not connected.
TB6549HQ: Pins 4, 5, 7, 8, 9, 13, 17, 18, 19, 21, and 22 are not connected.
Note 1: Connect VCC and P-GND through the power supply capacitor. This capacitor should be as close as possible
to the IC.
Note 2: When connecting the motor pins through the capacitor for reducing noise, connect a resistor to the capacitor
for limiting the charge current. The switching loss increases for PWM control. Therefore, whenever
practicable, avoid connecting the capacitor if PWM control is required.
Note 3: Short-circuit S-GND and P-GND as close to the TB6549 as possible.
Note 4: Connect the capacitor C3 to S-GND.
Note 5: Connect the capacitors C1 and C2 as close to the TB6549 as possible, and the capacitor C1 as close to
S-GND.
Note 6: Pins 4, 5, 12, and 13 of the PG type are connected to the bed of the chip. Therefore expanding the round
area of these pins improves the heat radiation effect.
Usage Precautions
∙ Utmost care is necessary in the design of the output, VCC, and GND lines since the IC may be destroyed by
short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting
between contiguous pins.
∙ Be sure to install the IC correctly. The IC may be destroyed if installed wrongly (e.g., in reverse).
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Package Dimensions
Weight: 0.79 g (typ.)
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Package Dimensions
Weight: 1.11 g (typ.)
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Package Dimensions
HZIP25-P-1.00F
Unit: mm
Weight: 7.7 g (typ.)
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Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
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Points to remember on handling of ICs
(1) Over current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect
ICs under all circumstances. If the Over current protection circuits operate against the over current,
clear the over current status immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the over current protection circuit to not operate properly or IC breakdown before
operation. In addition, depending on the method of use and usage conditions, if over current
continues to flow for a long time after operation, the IC may generate heat resulting in breakdown.
(2) Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status
immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(3) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ)
at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
In addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(4) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in
system design.
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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