TB6593FNG
Toshiba Bi-CD Integrated Circuit Silicon Monolithic
TB6593FNG
Driver IC for DC motor
TB6593FNG is a driver IC for DC motor with output
transistor in LD MOS structure with low ON-resistor. Two
input signals, IN1 and IN2, can choose one of four modes
such as CW, CCW, short break, and stop mode.
Features
•
Power supply voltage
: VM = 15 V（Max）
•
Output current
: Iout = 1.2 A (ave)/3.2 A (peak)
•
Output low ON resistor
: 0.35 Ω ((typ. @VM ≥ 5 V)
•
Standby (Power save)system
•
CW/CCW/short break/stop function modes
•
Built-in thermal shutdown circuit and low voltage detecting circuit
•
Small faced package（SSOP20:0.65 mm pitch）
•
RoHS compatible
Weight: 0.09 g (typ.)
* This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product,
ensure that the environment is protected against electrostatic discharge by using an earth strap, a conductive
mat and an ionizer. Ensure also that the ambient temperature and relative humidity are maintained at
reasonable levels.
© 2014 TOSHIBA Corporation
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TB6593FNG
Block Diagram
Vcc
UVLO
20
17
16
STBY
Standby
3
4
5
IN1
18
6
IN2
Control
Logic
19
TSD
7
H-SW
Driver
14
15
PWM
GND
2
1
VM4
VM3
VM1
VM2
O1
O1
O2
O2
8
PGND1
9
PGND2
10
PGND3
11
PGND4
12
PGND5
13
PGND6
Pin Functions
Pin NO.
Symbol
Characteristics
Remarks
1
GND
Small signal GND
2
PWM
PWM signal input
“H” = Active/200 kΩ pull-down at internal
3
STBY
Standby signal input
“L” = Standby/200 kΩ pull-down at internal
4
VM1
5
VM2
VM supply
VM = 2.5 V to 13.5 V
6
O1
7
O1
8
PGND1
9
PGND2
10
PGND3
11
PGND4
12
PGND5
13
PGND6
14
O2
15
O2
16
VM3
17
VM4
18
IN1
Control signal input 1
19
IN2
Control signal input 2
20
Vcc
Small signal supply
Output1
Power GND
Output2
VM supply
VM = 2.5 V to 13.5 V
200 kΩ pull-down at internal
Vcc = 2.7 V to 5.5 V
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TB6593FNG
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
VM
15
Vcc
6
Input voltage
VIN
-0.2 to 6
V
IN1,IN2,STBY,PWM pins
Output voltage
Vout
15
V
O1,O2 pins
Iout
1.2
A
tw = 10 ms, Superimposed pulse, Duty is 20 % or less.
Supply voltage
Output current
Iout (peak)
Power dissipation
PD
Unit
Remarks
V
3.2
4.5
tw = 10 ms, Single pulse
1.18
76.2 mm × 114.3 mm × 1.6 mm When it is packaged to the board made of
glass-epoxy (Cu 30 %).
W
0.96
0.71
50 mm × 50 mm × 1.6 mm When it is packaged to the board made of
glass-epoxy (Cu 40 %).
IC only
Operating
temperature
Topr
-20 to 85
°C
Storage temperature
Tstg
-55 to 150
°C
Operating Ranges (Ta = −20 to 85°C)
Characteristics
Symbol
Min
Typ.
Max
Unit
Vcc
2.7
3
5.5
V
VM
2.5
5
13.5
V
Output current (H-SW)
Iout
―
―
1.0
A
Switching frequency
fPWM
―
―
100
kHz
Supply voltage
PD - Ta
PD - Ta
(w)
Power dissipation PD (W)
1.50
① IC only ①IC単体θj-a=176℃/W
② Mounted②基板実装時
on Glass-Epoxy Board,
(50 mm × 50PCB面積
mm × 1.650×50×1.6mm
mm, Cu film area ≥
40 %)
Cu箔面積≧40%
③ Mounted③基板実装時
on Glass-Epoxy Board,
(76.2 mm × PCB面積
114.3 mm ×76.2×114.3×1.6mm
1.6 mm, Cu film
area ≥ 30 %)
③
1.00
②
Cu箔面積≧30%
①
0.50
0.00
0
50
100
150
Ta (℃)
Ambient temperature Ta (℃)
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TB6593FNG
H-SW Control Function
Input
Output
IN1
IN2
PWM
STBY
OUT1
OUT2
Mode
H
H
H/L
H
L
L
Short break
L
H
H
H
L
H
CCW
L
H
L
L
Short break
H
L
H
H
H
L
CW
L
H
L
L
Short break
L
L
H/L
H
OFF
(High impedance)
Stop
H/L
H/L
H/L
L
OFF
(High impedance)
Standby
H-SW Operating Description
・To prevent penetrating current, dead time t2 and t4（300 ns：Designed value）is provided in switching to each mode
in the IC.
VM
OUT1
M
VM
OUT1
OUT2
OUT2
M
GND
OUT1
M
OUT2
GND
GND
t2
t1
t3
VM
OUT1
VM
VM
OUT2
M
OUT1
M
GND
OUT2
GND
t4
t5
VM
OUT1
Voltage wave
t1
t5
t3
t2
t4
4
GND
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TB6593FNG
Electrical Characteristics (unless otherwise specified, Vcc = 3 V, VM = 5 V, Ta = 25°C)
Characteristics
Symbol
Test Condition
Icc
STBY = Vcc
Supply current
Icc(STB)
IM(STB)
Control input voltage
Control input current
Standby input voltage
Standby input current
Output saturating voltage
Output leakage current
Regenerative diode VF
STBY = 0 V
Min
Typ.
Max
Unit
mA
―
0.9
1.2
―
―
1
―
―
1
VIH
2
―
Vcc+0.2
VIL
-0.2
―
0.8
IIH
VIN = 3 V
5
15
25
IIL
VIN = 0 V
―
―
1
VIH(STB)
2
―
Vcc+0.2
VIL(STB)
-0.2
―
0.8
IIH(STB)
VIN = 3 V
5
15
25
IIL(STB)
VIN = 0 V
―
―
1
Vsat(U+L)
Io = 1 A
―
0.35
0.5
IL(U)
VM = Vout = 15 V
―
―
1
IL(L)
VM = 15 V, Vout = 0 V
-1
―
―
VF(U)
VF(L)
Low voltage detecting voltage
UVLD
Recovering voltage
UVLC
Thermal shutdown circuit operating
temperature
TSD
Thermal shutdown hysteresis
ΔTSD
IF = 1 A
(Designed value)
―
1
1.1
―
1
1.1
―
2.0
―
―
2.2
―
―
(Designed value)
―
5
170
20
μA
V
μA
V
μA
V
μA
V
V
―
°C
―
2014-10-01
TB6593FNG
Typical Application Diagram
+2.7V
to
～5.5V
Vcc
C4
0.1uF
+ C3
10uF
STBY
20
UVLO
17
16
Standby
3
4
IN1
5
18
6
MCU
IN2
PWM
19
TSD
Control
Logic
H-SW
Driver
7
14
15
2
8
9
10
GND
11
1
12
13
Note:
VM4
VM3
C2
+ C1
10uF
VM1 0.1uF
+2.5V
to
～13.5V
VM2
O1
O1
O2
M
O2
PGND1
PGND2
PGND3
PGND4
PGND5
PGND6
Bypass capacitors (C1, C2, C3, and C4) should be connected as close as possible to the IC.
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Package Dimensions
Weight: 0.09 g (Typ.)
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Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified
for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only. Thorough
evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics. These
components and circuits are not guaranteed to prevent malfunction or failure from occurring in the
application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in
case of over current and/or IC failure. The IC will fully break down when used under conditions that
exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal
pulse noise occurs from the wiring or load, causing a large current to continuously flow and the
breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case
of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,
are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into
the design to prevent device malfunction or breakdown caused by the current resulting from the
inrush current at power ON or the negative current resulting from the back electromotive force at
power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in protection functions. If the power supply is
unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause
injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result
injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong orientation
or incorrectly even just one time.
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TB6593FNG
Points to remember on handling of ICs
(1) Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal
shutdown circuits operate against the over temperature, clear the heat generation status
immediately.
Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings
can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation.
(2) Heat Radiation Design
In using an IC with large current flow such as power amp, regulator or driver, please design the
device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ)
at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat
radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.
In addition, please design the device taking into considerate the effect of IC heat radiation with
peripheral components.
(3) Back-EMF
When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to
the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power
supply is small, the device’s motor power supply and output pins might be exposed to conditions
beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in
system design.
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TB6593FNG
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
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including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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