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TB67S105FTG,EL

TB67S105FTG,EL

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    WQFN48

  • 描述:

    IC MOTOR DRIVER BIPOLAR 48WQFN

  • 数据手册
  • 价格&库存
TB67S105FTG,EL 数据手册
TB67S105FTG Toshiba BiCD process integrated circuit silicon monolithic TB67S105FTG 8bit Serial controlled bipolar stepping motor driver 1. Outline The TB67S105FTG is a two phase bipolar stepping motor driver using a PWM chopper, controlled by 8-bit serial data. Fabricated by the BiCD process, the TB67S105FTG is rated at 50V/3.0A. The internal voltage regulator allows to control the device with a single VM power supply. P-WQFN48-0707-0.50-003 Weight: 0.12g (typ.) 2. Features  BiCD process integrated monolithic IC.  Capable of controlling one bipolar stepping motor.  Low on-resistance MOSFET output stage.  High voltage and current (for specification, please refer to the absolute maximum ratings and operation ranges).  Built-in serial-parallel convert circuit (8bit shift register)  3-line (Data, Clock, Latch) serial output function for cascade connection  PWM controlled constant-current drive.  Allows full and half step operation  4 bit (16 steps) adjustable torque function (TRQ1, TRQ2, TRQ3, TRQ4).  Built-in error detection circuits (Thermal shutdown (TSD), over current shutdown (ISD), and power on reset(POR)).  Built-in VCC regulator for internal use.  Chopping frequency of a motor can be customized by external resistor and capacitor.  Package type: P-WQFN48-0707-0.50-003 Note) Please be careful about thermal conditions during use. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 1 2022-01-07 TB67S105FTG 3. Pin assignment NC OUT_B+ OUT_B+ NC RS_B NC RS_B VM NC VCC L_OUT NC (Top View) 36 35 34 33 32 31 30 29 28 27 26 25 NC 37 24 NC C_OUT 38 23 NC D_OUT 39 22 GND GND 40 21 OUT_B- VREF_B 41 20 OUT_B- VREF_A 42 OSCM 43 18 GND NC 44 17 OUT_A- SI 45 16 OUT_A- 19 GND TB67S105FTG 6 7 8 9 10 11 12 NC GND 5 OUT_A+ 4 OUT_A+ 3 NC 2 RS_A 1 NC 13 NC RS_A NC 48 STANDBY 14 NC G- RCK 47 SCLR- 15 GND NC SCK 46 Please solder the four corner pins of the QFN package and the exposed pad to the GND area of the PCB. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 2 2022-01-07 TB67S105FTG 4. Pin explanations Pin No.1 to 28 Pin No. Pin Name Function 1 NC 2 SCLR- 3 G- 4 STANDBY Standby pin 5 GND Ground pin 6 NC 7 RS_A(*) Motor Ach current sense pin 8 RS_A(*) Motor Ach current sense pin 9 NC 10 OUT_A+(*) Motor Ach (+) pin 11 OUT_A+(*) Motor Ach (+) pin 12 NC Non-connection pin 13 NC Non-connection pin 14 NC Non-connection pin 15 GND 16 OUT_A-(*) Motor Ach (-) pin 17 OUT_A-(*) Motor Ach (-) pin 18 GND Ground pin 19 GND Ground pin 20 OUT_B-(*) Motor Bch (-) pin 21 OUT_B-(*) Motor Bch (-) pin 22 GND 23 NC Non-connection pin 24 NC Non-connection pin 25 NC Non-connection pin 26 OUT_B+(*) Motor Bch (+) pin 27 OUT_B+(*) Motor Bch (+) pin 28 NC Non-connection pin Serial register clear pin (low active) Serial data select pin (low active) Non-connection pin Non-connection pin Ground pin Ground pin Non-connection pin © 2012-2022 Toshiba Electronic Devices & Storage Corporation 3 2022-01-07 TB67S105FTG Pin No.29 to 48 Pin No. Pin Name Function 29 RS_B(*) Motor Bch current sense pin 30 RS_B(*) Motor Bch current sense pin 31 NC Non-connection pin 32 VM Motor power supply pin 33 NC Non-connection pin 34 VCC 35 L_OUT 36 NC Non-connection pin 37 NC Non-connection pin 38 C_OUT Serial ‘Clock’ output pin 39 D_OUT Shift register data output pin 40 GND 41 VREF_B Motor Bch output current set pin 42 VREF_A Motor Ach output current set pin 43 OSCM 44 NC Non-connection pin 45 SI Serial ‘Data’ input pin 46 SCK Serial ‘Clock’ input pin 47 RCK Serial ‘Latch’ input pin 48 NC Internal VCC regulator monitor pin Serial ‘Latch’ output pin Ground pin Oscillating circuit frequency for PWM chopping set pin Non-connection pin Note) Please do not run patterns under NC pins. (*) Please connect the pins with the same pin name. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 4 2022-01-07 TB67S105FTG 5. Block diagram SCK C_OUT RCK L_OUT SI D_OUT GSCLR- 8bit shift register Serial-Parallel Interface Oscillator (Motor) OSCM Internal Oscillator STANDBY Main control logic TSD ISD POR VCC REG VCC VM Torque control RS_A RS Comp A H-Bridge A NF level set VREF_A H-Bridge A Predriver VREF Comp A Motor H-Bridge A (Pch+Nch MOSFET) OUT_A+ OUT_A- RS_B RS Comp B H-Bridge B NF level set VREF_B H-Bridge B Predriver VREF Comp B Motor H-Bridge B (Pch+Nch MOSFET) OUT_B+ OUT_B- GND Functional blocks/circuits/constants in the block diagram may be omitted or simplified for explanatory purposes. All the grounding wires of the TB67S105FTG must run on the solder mask on the PCB, and be externally connected at a single point. Also, the grounding method should be considered for efficient heat dissipation. Careful attention should be paid to the layout of the output, VM and GND traces, to avoid short circuits across output pins or to the power supply or ground. If such a short circuit occurs, the device may be permanently damaged. Also, the utmost care should be taken for pattern designing and implementation of the device since it has power supply pins (VM, RS_x+, RS_x-, OUT_x+, OUT_x-, GND (x=A or B)) through which a particularly large current may run. If these pins are wired incorrectly, an operation error may occur or the device may be destroyed. The logic input pins must also be wired correctly. Otherwise, the device may be damaged owing to a current running through the IC that is larger than the specified current. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 5 2022-01-07 TB67S105FTG Output current feedback circuit, current setting circuit Note: Logic pins are either pulled up or pulled down internally by 100kohm resistor. Please refer to the equivalent circuit.) Reference Chopping circuit Decay Mode Output control circuit NF detect Signal Current feedback circuit OSCM Counter Mixed Decay Timing Charge start Output stop U1 signal U2 Output control L1 circuit L2 Current setting circuit Mixed Decay Timing Circuit OSC selector Output stage Output Stop signal Detection functions Output stage VM VCC ISD circuit VMR circuit Stop Signal Select circuit VCCR circuit TSD circuit ISD : Over current detection TSD : Over thermal TSD(Over temperature detection)circuit: When the temperature of the IC exceeds the threshold, the output stage will turn OFF. Reapplying the VM again from 0V or setting the STANDBY to H→L→H will reset the TSD. VMR(VM monitor)circuit: Detects H when VM is above the threshold, and detects L when VM is below the threshold. VCCR: VCC monitor VMR : VM monitor ISD(Over current detection)circuit:When the current exceeds the threshold, the output stage will turn OFF. Reapplying the VM again from 0V or setting the STANDBY to H→L→H will reset the ISD. Detection Circuit VCCR(VCC monitor)circuit: Detects H when VCC is above the threshold, and detects L when VCC is below the threshold. Detection circuit Latch clear signal Logic detection POR(Power On Reset)circuit: When both VMR and VCCR is above the threshold the logic becomes active. When both or either VMR or VCCR is below the threshold, the logic is stopped. Functional blocks/circuits/constants in the block diagram may be omitted or simplified for explanatory purposes. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 6 2022-01-07 TB67S105FTG 6. INPUT/OUTPUT equivalent circuit Pin Name SCLRSTANDBY SI SCK RCK Input/output equivalent circuit SCLRSTANDBY SI SCK RCK OSCM OSCM VREF_A VREF_B VREF_A VREF_B GG- L_OUT C_OUT D_OUT L_OUT C_OUT D_OUT © 2012-2022 Toshiba Electronic Devices & Storage Corporation 7 2022-01-07 TB67S105FTG Pin Name Input/output equivalent circuit RS_A RS_B OUT_A+ OUT_AOUT_B+ OUT_BRS_A RS_B OUT_A+ OUT_B+ OUT_AOUT_B- The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 8 2022-01-07 TB67S105FTG 7. Control mode/Function explanation Serial control interface (8bit shift register+8bit storage register) SCK C_OUT SDN RCK D_OUT Qh SCLR- 8 bit shift register Qa Qb Qc Qd Qe Qf Qg SI D_OUT synchronous 8 bit storage register QH QG QE QD QB QF TRQ4 TRQ3 TRQ2 TRQ1 ENABLE_B PHASE_B PHASE_A ENABLE_A Logic input gate G- STANDBY QC QA L_OUT Motor Control Logic The block diagram and equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. If the logic signal is not asserted, the initial status of the logic pins will be as shown below. SCK: Low SI: Low SCLR-: Low (shift register and storage register are at the initial status.) RCK: Low G-: High (PHASE_A, ENABLE_A, PHASE_B, ENABLE_B, TRQ1, TRQ2, TRQ3, TRQ4=Disable) STANDBY: Low (Standby mode) © 2012-2022 Toshiba Electronic Devices & Storage Corporation 9 2022-01-07 TB67S105FTG Truth table Input Function SI SCK SCLR- RCK G- X X X X H PHASE_A, ENABLE_A, PHASE_B, ENABLE_B, TRQ1, TRQ2, TRQ3, TRQ4=Disable X X X X L PHASE_A, ENABLE_A, PHASE_B, ENABLE_B, TRQ1, TRQ2, TRQ3, X X L X X Shift register and storage register are initialized L ↑ H X X The first data of the shift register is L, and the other register will be stored with the data before. H ↑ H X X The first data of the shift register is H, and the other register will be stored with the data before. X ↓ H X X The shift register data will maintain its status. The data after the shift register(Qh) will be output from D_OUT pin. X X H ↑ X Shift register data will be stored to the storage register. TRQ4=Enable (The storage register data will maintain its status.) X X H ↓ X X: Don’t care Note) To send the logic output data correctly to the next IC, please make sure to end the SCK data transfer with a Low signal. Function explanation The motor current is defined as plus when the current flows from OUT_X+ to OUT_X-, and defined minus when the current flows from OUT_X- to OUT_X+. Signal ENABLE_X PHASE_X STANDBY H L OUTPUT: ON OUTPUT: OFF When ENABLE_X is set to L, no matter what the PHASE status are, the corresponding output stage will be set OFF(Hiz). OUT_X+: H OUT_X+: L OUT_X-: L OUT_X-: H When set to H, the current will flow from OUT_X+ to OUT_Xat charge status. Motor operational Standby mode When STANDBY is set to L, the internal OSC circuit as well as output stage is set OFF; therefore the motor will not operate. (X=A or B) Internal signal and current ratio [Full step] Ach Internal signal PHASE_A H L L H ENABLE_A H H H H Bch Internal signal PHASE_B H H L L Output IOUT_A +100% -100% -100% +100% © 2012-2022 Toshiba Electronic Devices & Storage Corporation 10 ENABLE_B H H H H Output IOUT_B +100% +100% -100% -100% 2022-01-07 TB67S105FTG [Half step] Ach Internal signal PHASE_A H X L L L X H H Bch Internal signal PHASE_B H H H X L L L X Output IOUT_A +100% 0% -100% -100% -100% 0% +100% +100% ENABLE_A H L H H H L H H ENABLE_B H H H L H H H L Output IOUT_B +100% +100% +100% 0% -100% -100% -100% 0% X: Don’t care TRQ function: Current Ratio TRQ1 TRQ2 L L L L L L L L H H H H H H H H TRQ3 L L L L H H H H L L L L H H H H © 2012-2022 Toshiba Electronic Devices & Storage Corporation TRQ4 L L H H L L H H L L H H L L H H 11 L H L H L H L H L H L H L H L H Current Ratio(%) 0 5 10 15 25 29 38 43 52 60 67 74 80 86 94 100 2022-01-07 TB67S105FTG 9.Absolute Maximum Ratings (Ta = 25°C) Characteristics Motor power supply Motor output voltage Motor output current Internal VCC voltage Logic input voltage Logic output current VREF input voltage Power dissipation Operating temperature Storage temperature Junction temperature Symbol VM VOUT IOUT VCC VIH IOH IOL VREF PD TOPR TSTR Tj(max) Rating 50 50 3 6 6 -7 7 5 1.3 -20 to 85 -55 to 150 150 Unit V V A V V mA mA V W °C °C °C Note Note 1 Note 2 Note 3 - Note 1: Usually the maximum current value should be controlled below 80% or less of the absolute maximum ratings for a standard based on thermal rating. The maximum output current may be further limited due to thermal considerations, depending on ambient temperature and board conditions. Note 2: VCC is an internal voltage regulator and regulates 4.75V≤VCC≤5.25V in a normal condition. The above rating shows the pin tolerance. Note 3: Device alone. (Ta =25°C) If the ambient temperature is above 25°C, the power dissipation must be de-rated by 10.4mW/°C. Ta: Ambient temperature Topr: Ambient temperature while the device is active Tj: Junction temperature while the device is active. The maximum junction temperature is limited by the thermal shutdown(TSD) circuitry. It is advisable to keep the maximum current below a certain level so that the maximum junction temperature, Tj(max), will not exceed 120°C. Caution) Absolute maximum ratings The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. The value of even one parameter of the absolute maximum ratings should not be exceeded under any circumstances. The device does not have overvoltage detection circuit. Therefore, the device is damaged if a voltage exceeding its rated maximum is applied. All voltage ratings, including supply voltages, must always be followed. The other notes and considerations described later should also be referred to. Operating Range (Ta=0 to 85°C) Characteristics Motor power supply Motor output current Logic input voltage Chopping frequency set range VREF input voltage Symbol VM IOUT VIN(H) VIN(L) fchop(range) VREF Min 10 3.0 0 40 GND Typ. 24 1.0 100 3.0 Max 40 2.4 5.5 2.0 150 3.6 Unit V A V V kHz V Note Note Logic H level Logic L level - Note: Maximum current for actual usage may be limited by the operating circumstances such as operating conditions (exciting mode, operating time, etc), ambient temperature, and heat conditions (board condition and so on). © 2012-2022 Toshiba Electronic Devices & Storage Corporation 12 2022-01-07 TB67S105FTG Electrical Specifications (Ta = 25°C, VM = 24 V, unless otherwise specified) Characteristics Logic input voltage Symbol HIGH LOW Logic input hysteresis Logic input current HIGH LOW Logic output pin HIGH voltage LOW Power consumption VIN(H) VIN(L) VIN(HYS) IIN(H) IIN(L) VOH(LO) Test conditions Logic input pin (Note1) Min Typ. Max Unit 3.0 0 0.3 -0.41 33 -0.34 5.5 2.0 0.5 50 1 -0.27 V V V μA μA V 0.20 - 0.25 2 0.30 3.5 V mA - 3.5 5.5 mA - 5.5 7 mA IOH Logic input voltage:3.3V Logic input voltage:0V IOH(LO)=-3mA, VCC based IOL(LO)=3mA, GND based Output pins=open, STANDBY=L Output pins=open, STANDBY=H, ENABLE=L Output pins=open, (Full step) VM=RS=50V, VOUT=0V - - 1 μA IOL VM=RS=VOUT=50V 1 - - μA ΔIOUT1 Current differential between Ach and Bch -5 0 5 % Motor current setting accuracy ΔIOUT2 IOUT=1A (Note2) -5 0 5 % RS pin current IRS VM=RS=24V 0 - 10 μA Output MOSFET On resistance (High+Low side) Rds(on) IOUT=2.4A, Tj=25°C, Forward direction, (High side + Low side) - 0.6 0.8 Ω VOL(LO) IM1 IM2 IM3 Output leakage current High side Low side Motor current channel differential Note1: VIN (H) is defined as the VIN voltage that causes the outputs (OUT_A, OUT_B) to change when a pin under test is gradually raised from 0 V. VIN (L) is defined as the VIN voltage that causes the outputs (OUT_A, OUT_B) to change when the pin is then gradually lowered. The difference between VIN (H) and VIN (L) is defined as the VIN (HYS). Note2: When using the internal VCC regulator and for VREF input voltage with a resistance divider; taking VCC accuracy and VREF ratio into consideration, the motor current setting accuracy specification will be ±8%. Note: When the logic signal is applied to the device whilst the VM power supply is not asserted; the device is designed not to function, but for safe usage, please apply the logic signal after the VM power supply is asserted and the VM voltage reaches the proper operating range. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 13 2022-01-07 TB67S105FTG Electrical Specifications (Ta=25°C, VM=24 V, unless otherwise specified) Characteristics VREF input voltage VREF input current VCC pin voltage VCC pin current VREF ratio Thermal shutdown threshold VM POR threshold Over-current detection threshold Symbol VREF IREF VCC ICC VREF(gain) TSD VMR ISD Test conditions VM=24V, VCC=5V VREF=3V ICC=5mA VCC=5V VREF=2V Note 1 Note 2 Min GND 4.75 1/5.2 140 7 3.6 Typ. 3.0 0 5 2.5 1/5 150 8 4.6 Max 3.6 1 5.25 5 1/4.8 170 9 5.6 Unit V μA V mA °C V A (Note 1) About Thermal shutdown (TSD) When the junction temperature of the device reaches the TSD threshold, the TSD circuit is triggered; the internal reset circuit then turns off the output transistors. Noise rejection blanking time is built-in to avoid misdetection. Once the TSD circuit is triggered; the detect latch signal can be cleared by reasserting the VM power source, or setting the device to standby mode. The TSD circuit is a backup function to detect a thermal error, therefore is not recommended to be used aggressively. (Note 2) About Over-current detection (ISD) When the output current reaches the threshold, the ISD circuit is triggered; the internal reset circuit then turns off the output transistors. Once the ISD circuit is triggered, the detect latch signal can be cleared by reasserting the VM power source, or setting the device to standby mode. For fail-safe, please insert a fuse to avoid secondary trouble. Back-EMF While the motor is rotating, there is a timing at which power is fed back to the power supply. At that timing, the motor current recirculates back to the power supply due to the effect of the motor back-EMF. If the power supply does not have enough sink capability, the power supply and output pins of the device might rise above the rated voltages. The magnitude of the motor back-EMF varies with usage conditions and motor characteristics. It must be fully verified that there is no risk that the device or other components will be damaged or fail due to the motor back-EMF. Cautions on Overcurrent Shutdown (ISD) and Thermal Shutdown (TSD) The ISD and TSD circuits are only intended to provide temporary protection against irregular conditions such as an output short-circuit; they do not necessarily guarantee the complete IC safety. If the device is used beyond the specified operating ranges, these circuits may not operate properly: then the device may be damaged due to an output short-circuit. The ISD circuit is only intended to provide a temporary protection against an output short-circuit. If such condition persists for a long time, the device may be damaged due to overstress. Overcurrent conditions must be removed immediately by external hardware. IC Mounting Do not insert devices incorrectly or in the wrong orientation. Otherwise, it may cause breakdown, damage and/or deterioration of the device. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 14 2022-01-07 TB67S105FTG Electrical Specification(Ta=25°C, VM=24V, 6.8mH/5.7Ωunless otherwise specified) Characteristics Minimum pulse width (SCK,RCK,SI) Minimum setup time Minimum clock signal cycle(SCK,RCK) Minimum hold time Test conditions Min Typ. Max Unit fOSCM=1600kHz 100 - - ns tw(L) fOSCM=1600kHz 100 - - ns tset1 SCLR-→SCK 50 - - ns tset2 SI→SCK 50 - - ns tset3 SCK→RCK 50 - - ns fOSCM=1600kHz 200 - - ns thold1 SCK→SI 50 - - ns thold2 SCLR-→Data 50 - - ns tr Motor output 70 120 170 ns tf Motor output 100 150 200 ns AtBLK VM=24V, IOUT=1A Analog tBLK 250 400 550 ns COSC=270pF, ROSC=3.6kΩ 1360 1600 1840 kHz Output:Active(IOUT=1 A), fOSCM= 1600 kHz - 100 - kHz tcyc Output transistor switching time Analog noise blanking time OSCM frequency fOSCM Chopping frequency SCLR- Symbol tw(H) fchop tset1 tw(H) SCK thold2 thold1 SI tw(L) tset2 (DATA) RCK tset3 Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 15 2022-01-07 TB67S105FTG ・Application Notes Mixed Decay Mode waveform and settings During constant current control, the rate of the Mixed decay mode which determines the current ripple is fixed to 37.5%. fchop Internal OSC Current threshold NF MDT IOUT Charge Mode →NF detect →Slow Mode → Mixed Decay Timing → Fast Mode →Charge Mode Mixed Decay Mode waveform (Current waveform) fchop fchop Internal OSC Current threshold NF NF IOUT MDT (Mixed Decay Timing) : 37.5% (fixed) Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 16 2022-01-07 TB67S105FTG Mixed (Slow + Fast) Decay Mode current waveform ○ When the current value increases (Mixed Decay Mode is fixed to 37.5%) fchop fchop fchop fchop Internal OSC NF NF Current Threshold Slow Slow Fast Current Threshold NF NF Slow Charge Fast Charge Fast Charge Slow Charge Fast ○ When the current value decreases (Mixed Decay Mode is fixed to 37.5%) fchop fchop fchop fchop Internal OSC Current Threshold NF The IC enters Charge mode for a moment at which the internal RS comparator compares the values. The IC immediately enters SlowDecay mode because of the current value exceeding the predefined current level. NF Slow Charge Slow Charge NF Fast Fast Charge Current Threshold Slow NF Fast NF Slow Charge Fast Charge Note: Timing charts may be simplified for explanatory purpose. Note: These figures are intended for illustrative purposes only. If designed more realistically, they would show transient response curves. The Charge period starts as the internal oscillator clock starts counting. When the output current reaches the predefined current level, the internal RS comparator detects the predefined current level (NF); as a result, the IC enters Slow-Decay mode. The device transits from Slow-Decay mode to Fast-Decay mode at the point 37.5% of a PWM frequency (one chopping frequency) remains in a whole PWM frequency period (on the rising edge of the 11th clock of the OSCM clock). When the OSCM pin clock counter clocks 16 times, the Fast-Decay mode ends; and at the same time, the counter is reset, which brings the device into Charge mode again. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 17 2022-01-07 TB67S105FTG PHASE signal and internal OSC - output current waveform (Full step mode) Note: Timing charts may be simplified for explanatory purpose. 37.5% MIXED DECAY MODE fchop fchop fchop Current Threshold IOUT 0 MDT Current Threshold NF PHASE signal NF The internal OSC counter is reset. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 18 2022-01-07 TB67S105FTG Motor output function VM VM RS VM RS U1 RS U2 U1 U2 U1 U2 OFF OFF OFF OFF ON L1 L2 L1 OFF ON ON ON Load Load Load L2 ON PGND L1 L2 ON OFF PGND PGND Fast mode Recirculates the energy back to the power supply. Slow mode Circulates the current within the device and load. Charge mode Flows the current into the load. The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. Motor output function Mode U1 U2 L1 L2 CHARGE ON OFF OFF ON SLOW OFF OFF ON ON FAST OFF ON ON OFF Note: The table above is an example when the current flow in the direction shown in the figure above. The table below shows when it is in reverse. Mode U1 U2 L1 L2 CHARGE OFF ON ON OFF SLOW OFF OFF ON ON FAST ON OFF OFF ON This device controls each mode automatically to achieve the constant current drive. Note: The device has a dead time to avoid shoot-through current during the mode changes. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 19 2022-01-07 TB67S105FTG Current threshold calculation The peak current (current threshold) is set by current sense resistor (RS) and reference voltage (VREF). VREF(V) IOUT(max) = VREF(gain) x RS(Ω) VREF(gain) : VREFgain is rated at 1 / 5.0 (typ.). Example) When current ratio is 100%, When VREF = 3.0 V, Torque = 100%, RS = 0.51Ω is applied the current threshold (peak current) is calcculated as below; IOUT = 3.0V / 5.0 / 0.51Ω= 1.18 A OSCM frequency calculation The approximation of the OSCM frequency (fOSCM) and chopping frequency (fchop) can be calculated by below. fOSCM=1/[0.60x{Cx(R1+500)}] R1=3.6kΩ) ………C,R1 : OSCM resistor and capacitor value (e.q. C=270pF , fchop = fOSCM / 16 Increasing the chopping frequency will decrease the current ripple, which will lead to a better waveform quality. But it will also increase the gate loss, leading to an increase in heat generation. Decreasing the chopping frequency will most likely lower the heat generation, but will also lead to an increase in the current ripple. Therefore, as a reference the chopping frequency should be set to 70kHz first, then be adjusted between the range of 50kHz to 100kHz, depending on each customer’s usage conditions. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 20 2022-01-07 TB67S105FTG Power consumption The power consumed within the device is mainly separated into two groups; the output power stage and the internal logic. 1. Motor output power consumption (Rds(on)= 0.6 Ω) The power consumption of the output stage is mainly due to the H-Bridges. The power consumption within the two H-Bridges can be calculated as below. P (out) = 2 (H-Bridge) × IOUT (A) × VDS (V) = 2 (H-Bridge) × IOUT (A)2 × Rds(on) (Ω)....................... (1) Controlling the motor in full step mode ideally will make the motor current to a trapezoidal waveform. In this case, the average power consumption can be calculated as shown below. Example: Rds(on) = 0.6Ω, IOUT (peak: Max) = 1.0 A, VM = 24 V P (out) = 2 (H-Bridge) × 1.0 (A)2 × 0.6(Ω) ….(2) = 1.2 (W) 2. Internal logic power consumption There are two states in which the internal logic power consumption can be considered. I (IM3) = 5.5mA (typ.) I (IM2) = 3.5mA (typ.) : When motor is in operation. : When motor is stopped. The output is connected to the VM(24V); therefore, the power consumed should be multiplied by the VM and IM. The power consumption in this case can be calculated as below. P (IM3) = 24 (V) × 0.0055 (A) ................................................................................................................ (3) = 0.132 (W) The power consumption can also be calculated when the motor is not in operation. P (IM2) = 24 (V) × 0.0035 (A) = 0.084 (W) 3. Total power consumption As a result from (2) and (3) above, the total power consumption can be calculated as shown below. P = P (out) + P (IM) = 1.332 (W) Note that the calculation is just a reference and the margin for PCB design should be considered based on evaluation and consideration under the actual usage conditions. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 21 2022-01-07 TB67S105FTG OSCM-Charge DELAY: OSCM-Fast Delay OSCM-Charge Delay H OSCM L tchop H OUTPUT Voltage B 50% L H OUTPUT Voltage A 50% 50% L Current threshold OUTPUT Current A L Charge Slow Fast Note: Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 22 2022-01-07 TB67S105FTG OSCM-Charge DELAY: When transferring the OSCM waveform into the internal OSC, there will be some delay due to the level determination of the OSCM waveform. The maximum delay between the OSCM and the internal OSC is nearly 1µs (fOSCM = 1600 kHz). OSCM-CR CLK DELAY OSCM waveform Internal OSC Figure: Timing charts of the OSCM and the internal OSC waveform Note: Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 23 2022-01-07 TB67S105FTG Step resolution sequence Full step resolution sequence 100% Bch current [%] B A -100% 100% 0% C D -100% Ach current [%] D A B C D A B C D A B C D A B 100% 0% IOUTA -100% 100% IOUTB 0% -100% PHASE_A ENABLE_A PHASE_B H L H L H L ENABLE_B H L Note: Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 24 2022-01-07 TB67S105FTG Half step resolution sequence 100% C A Bch current [%] B 0% D -100% E H 100% F -100% G Ach current [%] C D A B C D E F GH A B C D E F GHA B CD E F GH A B C DE F G 100% IOUTA 0% -100% 100% IOUTB 0% -100% H PHASE_A L H ENABLE_A L H PHASE_B ENABLE_B L H L Note: Timing charts may be simplified for explanatory purpose. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 25 2022-01-07 TB67S105FTG Step resolution sequence Full step sequence(TRQ1/TRQ2,TRQ3,TRQ4 settings) +100% -100% Bch current [%] +100% -100% Ach current [%] (Example) (TRQ1,TRQ2,TRQ3,TRQ4=H,H,H,H=100%) Ach Input PHASE_A H L L H ENABLE_A H H H H Bch Output IOUT(A) +100% -100% -100% +100% Input PHASE_B H H L L ENABLE_B H H H H Output IOUT (B) +100% +100% -100% -100% (Example) (TRQ1,TRQ2,TRQ3,TRQ4=H,L,L,H=60%) Ach Input PHASE_A H L L H ENABLE_A H H H H Bch Output IOUT(A) +60% -60% -60% +60% © 2012-2022 Toshiba Electronic Devices & Storage Corporation 26 Input PHASE_B H H L L ENABLE_B H H H H Output IOUT(B) +60% +60% -60% -60% 2022-01-07 TB67S105FTG Step resolution sequence Half step sequence(TRQ1/TRQ2,TRQ3,TRQ4 settings) +100% -100% Bch current [%] +100% -100% Ach current [%] (Example) (TRQ1,TRQ2,TRQ3,TRQ4=H,H,H,H=100%) Ach Input PHASE_A H X L L L X H H ENABLE_A H L H H H L H H Bch Output IOUT (A) +100% 0 -100% -100% -100% 0 +100% +100% Input PHASE_B H H H X L L L X ENABLE_B H H H L H H H L Output IOUT (B) +100% +100% +100% 0 -100% -100% -100% 0 X: Don’t care © 2012-2022 Toshiba Electronic Devices & Storage Corporation 27 2022-01-07 TB67S105FTG (Example) (TRQ1,TRQ2,TRQ3,TRQ4=L,H,L,L=25%) Ach Input PHASE_A H X L L L X H H ENABLE_A H L H H H L H H Bch Output IOUT (A) +25% 0 -25% -25% -25% 0 +25% +25% Input PHASE_B H H H X L L L X ENABLE_B H H H L H H H L Output IOUT (B) +25% +25% +25% 0 -25% -25% -25% 0 x: Don’t care © 2012-2022 Toshiba Electronic Devices & Storage Corporation 28 2022-01-07 TB67S105FTG Blanking time for over current detection About ISD blanking time ISD detection flag ISD detection signal (synced) Internal clock (foscs) =6.4MHz (typ.) 0 1 2 3 4 5 6 7 Note: Timing charts may be simplified for explanatory purpose. To avoid misdetecting the ISD which may be caused by external noise or switching spikes, the ISD circuit has a blanking time. This blanking time is counted up by the internal system clock(6.4MHz (typ.)). ※foscs=6.4MHz(typ.) internal clock 1/foscs×7 to 8clk (1.09μs to 1.25μs) Note that this blanking time is just a designed value and only for reference. It does not guarantee that the ISD will be detected in the ideal way when used in the actual conditions. Therefore, for safety measures, please insert a protective fuse in the VM power line. The optimum value of the fuse will change in each customer’s usage conditions, so please select a fuse with enough margin to operate correctly and safely. Blanking time for over thermal detection About TSD blanking time TSD detection flag TSD detection signal (synced) Internal clock (foscs) =6.4MHz (typ.) 1/2 foscs 0 1 2 3 4 ・・・ Note: Timing charts may be simplified for explanatory purpose. To avoid misdetecting the TSD, the TSD circuit has a blanking time. This blanking time is counted up by the internal system clock(6.4MHz (typ.)). ※foscs=6.4MHz(typ.) internal clock 1/(foscs/2)×7 to 8clk=1/foscs×14 to 16clk (2.18μs to 2.5μs) © 2012-2022 Toshiba Electronic Devices & Storage Corporation 29 2022-01-07 TB67S105FTG (For reference) PD-Ta graph PD-Ta PD-Ta Graph of graph TB62216FTG (1) …IC単体 Device alone (2) …専用実装基板(Fr-4)への実装時 When mounted on a specially designed FR-4      (基板レイアウト/実装状態に依存) (Board layout and solder condition dependant) 4.5 4.0 Power dissipation [W] 3.5 (2) 3.0 2.5 2.0 1.5 (1) 1.0 0.5 0.0 0 25 50 75 100 Ambient temperature [℃] 125 150 Operating temperature TOPR 0 to 85°C (1) Rth(j-a) Device alone (96°C /W) (2) When mounted on a specially designed FR-4 PCB (100 mm × 200 mm × 1.6 mm: 30°C /W : reference value) Device alone(Ta = 25°C) If the Ta exceeds above 25°C, de-rate by 10.4mW/°C When mounted on a specially designed FR4(Ta = 25°C) If the Ta exceeds above 25°C, de-rate by 33.3mW/°C © 2012-2022 Toshiba Electronic Devices & Storage Corporation 30 2022-01-07 TB67S105FTG TB67S105FTG application circuit 1.0Ω 100μF [36] [25] [24] [37] 0.1μF 10kΩ 270pF 3.6kΩ 10kΩ 0.1μF 0.1μF (Values of the components are for reference.) M [48] [13] [12] 1.0Ω [1] Note that the shaded area shown above is either the GND pins or GND area, and shown in gray is the NC pins. Note: Please consider adding capacitors if needed. Also make sure that the GND pattern is connected to each other. For RS_A, RS_B, OUT_A+, OUT_A-, OUT_B-, and OUT_B+; there are two pins so please tie the same pins together when using the device. Note: Solder/mount the four corner pads and the exposed pad to the GND area of the board. The application circuit above is an example; therefore, mass-production design is not guaranteed. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 31 2022-01-07 TB67S105FTG Package dimensions P-WQFN48-0707-0.50-003 © 2012-2022 Toshiba Electronic Devices & Storage Corporation Unit: mm 32 2022-01-07 TB67S105FTG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Providing these application circuit examples does not grant a license for industrial property rights. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction of failure from occurring in the application equipment. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 33 2022-01-07 TB67S105FTG IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. (2) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (3) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (4) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 34 2022-01-07 TB67S105FTG Points to remember on handling of ICs (1) Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor reverses the rotation direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. © 2012-2022 Toshiba Electronic Devices & Storage Corporation 35 2022-01-07 TB67S105FTG RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2012-2022 Toshiba Electronic Devices & Storage Corporation 36 2022-01-07
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