TB7101AFT5L3.3

TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Toshiba BiCD Integrated Circuit Silicon Monolithic TB7101AF(T5L1.2,F),TB7101AF(T5L1.5,F) TB7101AF(T5L1.8,F),TB7101AF(T5L2.5,F) TB7101AF(T5L3.3,F) Buck DC-DC Converter IC The TB7101AF is a single-chip buck DC-DC converter IC. The TB7101AF contains high-speed and low-on-resistance power MOSFETs for the main switch and synchronous rectifier to achieve high efficiency. Features • • • • • • • • Enables up to 1 A of load current (IOUT) with a minimum of external components. Fixed output voltage: VOUT = 1.2 V/1.5 V/1.8 V/2.5 V/3.3 V (typ.) A high 1-MHz oscillation frequency (typ.) allows the use of small external components. Uses only an inductor and two capacitors to achieve high efficiency. Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. Enable threshold voltage : VIH(EN) = 1.5 V, VIL(EN) = 0.5 V(@VIN = 5 V) Housed in a small surface-mount package (PS-8) with a low thermal resistance. Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP) Weight: 0.017 g (typ.) Parts Marking Product TB7101AF (T5L1.2, F) TB7101AF (T5L1.5, F) TB7101AF (T5L1.8, F) TB7101AF (T5L2.5, F) TB7101AF (T5L3.3, F) *: Output Voltage (V) 1.2 1.5 1.8 2.5 3.3 Parts Marking 7101F 7101G 7101H 7101J 7101K Parts Marking Lot No. Pin Assignment LX 8 VFB 7 N.C. 6 N.C. 5 * The dot (•) on the top surface indicates pin 1. 1 PGND 2 VIN 3 EN 4 SGND The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. 1 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Ordering Information Part Number TB7101AF (T5L*.*, F) Shipping Embossed tape (3000 units per reel) Block Diagram VIN EN Undervoltage lockout & soft-start reference voltage Current detection Oscillator PWM comparator Control logic Driver LX Slope compensation Driver VFB Error amplifier 0.8V (typ.) Phase compensation VCOMP Thermal shutdown PGND SGND Pin Description Pin No. 1 2 Symbol PGND VIN EN SGND N.C. N.C. VFB LX Ground for the output section Input pin This pin is placed in the standby state if VEN = low. Standby current is 1 μA or less. Enable pin When EN ≥ 1.5 V (@VIN = 5 V), the control logic is allowed to operate and thus enable the switching operation of the output section. Ground for the control logic No-connect No-connect Feedback pin Output voltage is set to 1.2 V/1.5 V/1.8 V/2.5 V/3.3 V (typ.) internally. Switch pin This output is connected to the high-side P-channel MOSFETs and low-side N-channel MOSFET. Description 3 4 5 6 7 8 2 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Timing Chart Normal Operation OSC 0 IOUT VOUT 0 0 VCOMP 0 IL 0 VLX TON T OSC : Internal oscillator output signal IOUT : Converter output current VOUT : Converter output voltage VCOMP : Output voltage of error amplifier : Inductor current IL : Switch pin voltage VLX 3 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Absolute Maximum Ratings (Ta = 25°C) Characteristics Input voltage Enable pin voltage VEN−VIN voltage difference Feedback pin voltage Switch pin voltage Switch pin current Power dissipation (Note 1) Symbol VIN VEN VEN − VIN VFB VLX ILX PD Tjopr Tj Tstg Rating −0.3 to 6 −0.3 to 6 VEN − VIN < 0.3 −0.3 to 6 −0.3 to 6 ±1.3 0.7 −40 to 125 150 −55 to 150 Unit V V V V V A W °C °C °C Operating junction temperature Junction temperature Storage temperature (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Thermal Resistance Characteristic Characteristics Thermal resistance, junction and ambient Symbol Rth (j-a) Max 178.6 (Note 1) Unit °C/W Note 1: Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Note 2: The TB7101AF may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 4 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V) TB7101AF (T5L1.2, F) Characteristics Operating input voltage Operating current Standby current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 RDS (ON) (H) RDS (ON) (L) ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis TSD ΔTSD VUV VUVR ΔVUV ILIM Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 2.7 V, VEN = 2.7 V, VFB = 2.7 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 2.7 V VIN = 5 V VIN = 2.7 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 2.7 V, VEN = 2.7 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V, ILX = −0.5 A VIN = 5 V, VEN = 5 V, ILX = 0.5 A VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 0 A VIN = 2.7 V, VEN = 2.7 V, IOUT = 0 A VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Min 2.7 ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 4.1 1.164 1.164 ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.4 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.2 1.2 0.27 0.27 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.69 1 ⎯ ⎯ 0.5 0.5 12.4 6.7 1.236 1.236 ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA V V V V μA μA V V Ω Ω μA μA MHz MHz ms ms °C °C V V V A VFB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Thermal shutdown (TSD) Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 5 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V) TB7101AF (T5L1.5, F) Characteristics Operating input voltage Operating current Standby current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 RDS (ON) (H) RDS (ON) (L) ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis TSD ΔTSD VUV VUVR ΔVUV ILIM Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 2.7 V, VEN = 2.7 V, VFB = 2.7 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 2.7 V VIN = 5 V VIN = 2.7 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 2.7 V, VEN = 2.7 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V, ILX = −0.5 A VIN = 5 V, VEN = 5 V, ILX = 0.5 A VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 0 A VIN = 2.7 V, VEN = 2.7 V, IOUT = 0 A VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Min 2.7 ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 4.1 1.455 1.455 ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.4 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.5 1.5 0.27 0.27 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.69 1 ⎯ ⎯ 0.5 0.5 12.4 6.7 1.545 1.545 ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA V V V V μA μA V V Ω Ω μA μA MHz MHz ms ms °C °C V V V A VFB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Thermal shutdown (TSD) Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 6 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.8 to 5.5 V) TB7101AF (T5L1.8, F) Characteristics Operating input voltage Operating current Standby current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 RDS (ON) (H) RDS (ON) (L) ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis TSD ΔTSD VUV VUVR ΔVUV ILIM Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 2.8 V, VEN = 2.8 V, VFB = 2.8 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 2.8 V VIN = 5 V VIN = 2.8 V VIN = 5 V, VEN = 5 V VIN = 2.8 V, VEN = 2.8 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 2.8 V, VEN = 2.8 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V, ILX = −0.5 A VIN = 5 V, VEN = 5 V, ILX = 0.5 A VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 2.8 V, VEN = 2.8 V VIN = 5 V, VEN = 5 V, IOUT = 0 A VIN = 2.8 V, VEN = 2.8 V, IOUT = 0 A VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Min 2.8 ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 4.26 1.746 1.746 ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.4 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.58 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.8 1.8 0.27 0.27 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.69 1 ⎯ ⎯ 0.5 0.5 12.4 6.94 1.854 1.854 ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA V V V V μA μA V V Ω Ω μA μA MHz MHz ms ms °C °C V V V A VFB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Thermal shutdown (TSD) Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 7 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 3.5 to 5.5 V) TB7101AF (T5L2.5, F) Characteristics Operating input voltage Operating current Standby current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 RDS (ON) (H) RDS (ON) (L) ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis TSD ΔTSD VUV VUVR ΔVUV ILIM Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 3.5 V, VEN = 3.5 V, VFB = 3.5 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 3.5 V VIN = 5 V VIN = 3.5 V VIN = 5 V, VEN = 5 V VIN = 3.5 V, VEN = 3.5 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 3.5 V, VEN = 3.5 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V, ILX = −0.5 A VIN = 5 V, VEN = 5 V, ILX = 0.5 A VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 3.5 V, VEN = 3.5 V VIN = 5 V, VEN = 5 V, IOUT = 0 mA VIN = 3.5 V, VEN = 3.5 V, IOUT = 0 mA VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Min 3.5 ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 5.32 2.425 2.425 ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.3 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.61 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.5 2.5 0.27 0.27 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.705 1 ⎯ ⎯ 0.5 0.5 12.4 8.68 2.575 2.575 ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA V V V V μA μA V V Ω Ω μA μA MHz MHz ms ms °C °C V V V A VFB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Thermal shutdown (TSD) Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 8 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 4.3 to 5.5 V) TB7101AF (T5L3.3, F) Characteristics Operating input voltage Operating current Standby current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 RDS (ON) (H) RDS (ON) (L) ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis TSD ΔTSD VUV VUVR ΔVUV ILIM Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 4.3 V, VEN = 4.3 V, VFB = 4.3 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 4.3 V VIN = 5 V VIN = 4.3 V VIN = 5 V, VEN = 5 V VIN = 4.3 V, VEN = 4.3 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 4.3 V, VEN = 4.3 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V, ILX = −0.5 A VIN = 5 V, VEN = 5 V, ILX = 0.5 A VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 4.3 V, VEN = 4.3 V VIN = 5 V, VEN = 5 V, IOUT = 0 A VIN = 4.3 V, VEN = 4.3 V, IOUT = 0 A VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Min 4.3 ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 6.54 3.201 3.201 ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.2 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.64 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.3 3.3 0.27 0.27 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.775 1 ⎯ ⎯ 0.5 0.5 12.4 10.66 3.399 3.399 ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA V V V V μA μA V V Ω Ω μA μA MHz MHz ms ms °C °C V V V A VFB input voltage High-side switch on-state resistance Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Thermal shutdown (TSD) Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 9 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Application Circuit Example VIN EN VIN VFB CIN CC TB7101AF (T5L*.*, F) LX L VOUT COUT SGND PGND GND GND Figure 1 TB7101AF(T5L*.*,F) Application Circuit Example Component values (@TB7101AF (T5L3.3, F), VIN = 5 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values (@TB7101AF (T5L1.2, F), VIN = 5 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 22 μF (ceramic capacitor: GRM31CB30J226K from Murata Manufacturing Co., Ltd.) L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values need to be adjusted, depending on the TB7101AF’s input/output conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: VIN : Input voltage (V) VIN − VOUT VOUT VOUT : Output voltage (V) L= ⋅ ········· (1) fosc ⋅ ΔIL VIN fosc : Oscillation frequency = 1 MHz (typ.) ΔIL : Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7101AF is 1 A, ΔIL should be 0.3 A or so. Therefore, the inductor should have a current rating greater than the peak output current of 1.15 A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. When TB7101AF (T5L3.3, F) and VIN = 5 V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the VIN range into account. 10 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) IL ΔIL L= VIN − VOUT VOUT ⋅ fosc ⋅ ΔIL VIN 5.0 V − 3.3 V 3.3 V ⋅ ······ (2) 1 MHz ⋅ 300 mA 5 V = 0 T= 1 fosc = 3.7 μH V TON = Τ ⋅ OUT VIN Figure 2 Inductor Current Waveform Output Capacitor Selection Use a ceramic capacitor as the output filter capacitor. Since a ceramic capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics (such as the JIS B characteristic). As a rule of thumb, its capacitance should be 10 μF or greater for TB7101AF (T5L3.3, F), TB7101AF (T5L2.5, F), TB7101AF (T5L1.8, F), and 20 μF or greater for TB7101AF (T5L1.5, F), TB7101AF (T5L1.2, F). The capacitance should be set to an optimal value that meets the system's ripple voltage requirement and transient load response characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Component Values (@VIN = 5 V, Ta = 25°C) These values are presented only as a guide. The following values may need tuning depending on the TB7101AF’s input/output conditions and the board layout. Inductance L TB7101AF (T5L1.2, F) TB7101AF (T5L1.5, F) TB7101AF (T5L1.8, F) TB7101AF (T5L2.5, F) TB7101AF (T5L3.3, F) 3.3 μH 3.3 μH 3.3 μH 3.3 μH 3.3 μH Input Capacitance CIN 10 μF 10 μF 10 μF 10 μF 10 μF Output Capacitance COUT 22 μF 22 μF 10 μF 10 μF 10 μF Product Undervoltage Lockout (UVLO) The TB7101AF has undervoltage lockout (UVLO) protection circuitry. The TB7101AF does not provide output voltage (VOUT) until the input voltage has reached VUVR (2.5 V typ.). UVLO has hysteresis of 0.1 V (typ.). After the switch turns on, if VIN drops below VUV (2.4 V typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage: VUVR Undervoltage lockout detection voltage: VUV Hysteresis: ΔVUV VIN GND Switching operation starts VOUT GND Switching operation stops Soft start Figure 4 Undervoltage Lockout Operation 11 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Thermal Shutdown (TSD) The TB7101AF provides thermal shutdown. When the junction temperature continues to rise and reaches TSD (160°C typ.), the TB7101AF goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 20°C. The device is enabled again when the junction temperature has dropped by approximately 20°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is used upon recovery from the TSD state. Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD Detection threshold: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Thermal Shutdown Operation Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors and inductors. These components should be evaluated on an actual system prototype for best selection. External components such as capacitors and inductor should be placed as close to the TB7101AF as possible. The TB7101AF has an ESD diode between the EN and VIN pins. The voltage between these pins should satisfy VEN − VIN < 0.3 V. Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1μF between the SGND and VIN pins. The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • • • • • 12 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Typical Performance Characteristics IIN – VIN 0.8 1.0 IIN – Tj VIN = 2.7 V VEN = VFB = 2.7 V TB7101AF(T5L1.2,F) (mA) (mA) IIN Operating current, 6 VEN = VFB = VIN Tj = 25°C TB7101AF(T5L1.2,F) 0 2 4 0.8 0.6 IIN 0.6 Operating current, 0.4 0.4 0.2 0.2 0 0 -50 -25 0 25 50 75 100 125 Input voltage, VIN (V) Junction temperature, Tj (°C) IIN – Tj 1.0 VIN = 5 V VEN = VFB = 5 V TB7101AF(T5L1.2,F) 2 VIH(EN), VIL(EN) – Tj VIN = 2.7 V TB7101AF(T5L1.2,F) (mA) 0.8 0.6 EN threshold voltage, VIH(EN), VIL(EN) (V) 1.5 IIN Operating current, 1 VIH(EN) 0.4 VIL(EN) 0.5 0.2 0 -50 -25 0 25 50 75 100 125 0 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) Junction temperature, Tj (°C) VIH(EN), VIL(EN) – Tj 2 VIN = 5 V TB7101AF(T5L1.2,F) 16 1.5 20 IIH(EN) – VIN VIN = 5.5 V , Tj = 25°C TB7101AF(T5L1.2,F) EN threshold voltage, VIH(EN), VIL(EN) (V) EN input current, IIH(EN) (μA) 125 VIH(EN) 1 VIL(EN) 0.5 12 8 4 0 -50 -25 0 25 50 75 100 0 0 1 2 3 4 5 6 Junction temperature, Tj (°C) EN input voltage, VEN (V) 13 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) 20 IIH(EN) – Tj VIN = 5 V , VEN = 5 V TB7101AF(T5L1.2,F) 2.6 VUV, VUVR – Tj 16 Undervoltage detection voltage, VUV, VUVR (V) Recovery voltage VUVR EN input current, (μA) 2.5 12 IIH(EN) 8 Detection voltage VUV 2.4 4 VEN = VIN 2.3 -50 TB7101AF(T5L1.2,F) -25 0 25 50 75 100 125 0 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) Junction temperature, Tj (°C) VOUT – VIN 2.0 VEN = VIN, Tj = 25°C TB7101AF(T5L1.2,F) 1.2 focs – VIN Tj = 25°C TB7101AF(T5L1.2,F) 1.1 (V) 1.5 Output voltage, 1 Oscillation frequency, fosc VOUT (MHz) 1 0.5 0.9 0 2.2 2.3 2.4 2.5 2.6 2.7 0.8 2 3 4 5 6 Input voltage, VIN (V) Input voltage, VIN (V) focs – Tj 1.2 VIN = 5V TB7101AF(T5L1.2,F) 1.1 Oscillation frequency, fosc (MHz) 1 0.9 0.8 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) 14 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) ΔVOUT – IOUT 30 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L3.3, F) 20 15 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L2.5, F) ΔVOUT – IOUT (mV) (mV) ΔVOUT Output voltage, 1 20 10 5 0 -5 -10 -15 -20 ΔVOUT Output voltage, 10 0 -10 -20 -30 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) ΔVOUT – IOUT 20 15 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L1.8, F) 20 15 ΔVOUT – IOUT VIN = 3.3V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L1.8, F) (mV) 10 5 0 (mV) ΔVOUT Output voltage, 1 10 5 0 -5 -10 -15 -20 0 Output voltage, ΔVOUT -5 -10 -15 -20 0 0.2 0.4 0.6 0.8 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) ΔVOUT – IOUT 20 15 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.5, F) 20 15 ΔVOUT – IOUT VIN = 3.3V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.5, F) (mV) 10 5 0 -5 -10 -15 -20 0 (mV) ΔVOUT Output voltage, 10 5 0 -5 -10 -15 -20 0 Output voltage, ΔVOUT 0.2 0.4 0.6 0.8 1 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) 15 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) ΔVOUT – IOUT 20 15 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.2, F) 20 15 ΔVOUT – IOUT VIN = 3.3V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.2, F) (mV) 10 5 0 -5 -10 -15 -20 (mV) ΔVOUT Output voltage, 10 5 0 -5 -10 -15 -20 Output voltage, ΔVOUT 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) ΔVOUT – VIN 30 IOUT = 0.2A , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L3.3, F) 20 15 ΔVOUT – IOUT IOUT = 0.2A , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L2.5, F) (mV) (mV) ΔVOUT Output voltage, 20 10 5 0 -5 -10 -15 -20 ΔVOUT Output voltage, 10 0 -10 -20 -30 2 3 4 5 6 2 3 4 5 6 Input voltage, VIN (V) Input voltage, VIN (V) ΔVOUT – VIN 20 15 IOUT = 0.2A , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L1.8, F) 20 15 ΔVOUT – VIN IOUT = 0.2A , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.5, F) (mV) (mV) ΔVOUT Output voltage, 10 5 0 -5 -10 -15 -20 10 5 0 -5 -10 -15 -20 2 Output voltage, ΔVOUT 2 3 4 5 6 3 4 5 6 Input voltage, VIN (V) Input voltage, VIN (V) 16 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) ΔVOUT – VIN 20 15 IOUT = 0.2A , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.2, F) 100 η – IOUT (mV) 10 5 0 -5 -10 -15 -20 2 80 Efficiency, η (%) ΔVOUT 60 Output voltage, 40 20 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L3.3, F) 3 4 5 6 0 0 0.2 0.4 0.6 0.8 1 Input voltage, VIN (V) Output current, IOUT (A) η – IOUT 100 100 η – IOUT 80 80 Efficiency, η (%) Efficiency, η (%) 60 60 40 40 20 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L2.5, F) 0 0.2 0.4 0.6 0.8 1 20 VIN = 3.3V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L1.8, F) 0 0.2 0.4 0.6 0.8 1 0 0 Output current, IOUT (A) Output current, IOUT (A) η – IOUT 100 100 η – IOUT 80 80 Efficiency, η (%) Efficiency, η (%) 60 60 40 40 20 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 10 μF TB7101AF (T5L1.8, F) 0 0.2 0.4 0.6 0.8 1 20 VIN = 3.3V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.5, F) 0 0.2 0.4 0.6 0.8 1 0 0 Output current, IOUT (A) Output current, IOUT (A) 17 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) η – IOUT 100 100 η – IOUT 80 80 Efficiency, η (%) 60 Efficiency, η (%) 60 40 40 20 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.5, F) 0 0.2 0.4 0.6 0.8 1 20 VIN = 3.3V, Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.2, F) 0 0 0 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) η – IOUT 100 Load Response 80 Efficiency, η (%) 60 Output voltage VOUT (200 mV/Div) 40 Output current: IOUT : (10 mA→800 mA→10 mA) VIN = 3.3 V , Ta = 25°C L = 3.3 μH, COUT = 22 μF TB7101AF (T5L1.2, F) 1 20 VIN = 5V , Ta = 25°C L = 3.3 μH , COUT = 22 μF TB7101AF (T5L1.2, F) 0 0 0.2 0.4 0.6 0.8 Output current, IOUT (A) 40 μs/div 18 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Board Layout Example Component side silk Solder side silk Component side pattern Solder side pattern 19 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) TP1 TP4 VIN P1 1 P2 GND 2 JP1 3 1 PGND 2V IN 3 EN 4 SGND IC1 C1 Lx 8 7 V FB TP3 L1 C2 VOUT P3 N.C. N.C. 6 5 TP2 P4 GND Figure 6 Circuit of the Board Layout Example External Component Examples Label IC1 C1 C2 L1 Vendor Toshiba Corporation Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. Taiyo Yuden Co., Ltd. Part Number TB7101AF(T5L*.*,F) GRM21BB30J106K GRM21BB30J106K NP04SB3R3N 20 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) Package Dimensions Weight: 0.017 g (typ.) 21 2008-05-22 TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F) RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 22 2008-05-22