TB7102AFTE85L

TB7102AF Toshiba BiCD Integrated Circuit Silicon Monolithic TB7102AF Buck DC-DC Converter IC The TB7102AF is a single-chip buck DC-DC converter IC. The TB7102AF contains high-speed and low-on-resistance power MOSFETs for the main switch and synchronous rectifier to achieve high efficiency. Features • • • • • • • • • Enables up to 1 A of load current (IOUT) with a minimum of external components. High efficiency (η = 95% typ.) (@VIN = 5 V, VOUT = 3.3 V and IOUT = 300 mA) Operating voltage (VIN) range: 2.7 V to 5.5 V A high 1-MHz oscillation frequency (typ.) allows the use of small external components. Uses internal phase compensation to achieve high efficiency with a minimum of external components. Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. Enable threshold voltage : VIH(EN) = 1.5 V, VIL(EN) = 0.5 V(@VIN = 5 V) Housed in a small surface-mount package (PS-8) with low thermal resistance. Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP) Weight: 0.017 g (typ.) Part Marking Part Number (Abbrev.) Lot No. Pin Assignment LX 8 VFB 7 N.C. 6 N.C. 5 7 1 0 2A * 1 The dot (•) on the top surface indicates pin 1. *: PGND 2 VIN 3 EN 4 SGND The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. 1 2008-05-22 TB7102AF Ordering Information Part Number TB7102AF (TE85L, F) Shipping Embossed tape (3000 units per reel) Block Diagram VIN EN Undervoltage lockout & soft-start reference voltage Current detection Oscillator PWM comparator Control logic Driver LX Slope compensation Driver PGND Phase compensation Error amplifier VFB 0.8 V (typ.) SGND VCOMP Thermal shutdown Pin Description Pin No. 1 2 Symbol PGND VIN EN SGND N.C. N.C. VFB LX Ground for the output section Input pin This pin is placed in the standby state if VEN = low. Standby current is 1 μA or less. Enable pin When EN ≥ 1.5 V (@VIN = 5 V), the control logic is allowed to operate and thus enable the switching operation of the output section. Ground for the control logic No-connect No-connect Feedback pin This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.). Switch pin This output is connected to the high-side P-channel MOSFETs and low-side N-channel MOSFET. Description 3 4 5 6 7 8 2 2008-05-22 TB7102AF Timing Diagram Normal Operation OSC 0 IOUT VOUT 0 0 VCOMP 0 IL 0 VLX TON T OSC: IOUT: VOUT: VCOMP: IL: VLX: Internal oscillator output signal Converter output current Converter output voltage Output voltage of error amplifier Inductor current Switch pin voltage 3 2008-05-22 TB7102AF Absolute Maximum Ratings (Ta = 25°C) Characteristics Input voltage Enable pin voltage VEN−VIN voltage difference Feedback pin voltage Switch pin voltage Switch pin current Power dissipation (Note 1) Symbol VIN VEN VEN − VIN VFB VLX ILX PD Tjopr Tj Tstg Rating −0.3 to 6 −0.3 to 6 VEN − VIN < 0.3 −0.3 to 6 −0.3 to 6 ±1.3 0.7 −40 to 125 150 −55 to 150 Unit V V V V V A W °C °C °C Operating junction temperature Junction temperature Storage temperature (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Thermal Resistance Characteristics Characteristics Thermal resistance, junction to ambient Symbol Rth (j-a) Max 178.6 (Note 1) Unit °C/W Note 1: Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Note 2: The TB7102AF may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 4 2008-05-22 TB7102AF Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V) Characteristics Operating input voltage Operating current Symbol VIN (OPR) IIN1 IIN2 IIN (STBY) 1 IIN (STBY) 2 VIH (EN) 1 EN threshold voltage VIH (EN) 2 VIL (EN) 1 VIL (EN) 2 EN input current IIH (EN) 1 IIH (EN) 2 VFB1 VFB2 IFB1 IFB2 Test Condition ⎯ VIN = 5 V, VEN = 5 V, VFB = 5 V VIN = 2.7 V, VEN = 2.7 V, VFB = 2.7 V VIN = 5 V, VEN = 0 V, VFB = 0 V VIN = 2.7 V, VEN = 0 V, VFB = 0 V VIN = 5 V VIN = 2.7 V VIN = 5 V VIN = 2.7 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 10 mA VIN = 2.7 V, VEN = 2.7 V, IOUT = 10 mA VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V Min 2.7 ⎯ ⎯ ⎯ ⎯ 1.5 1.5 ⎯ ⎯ 7.6 4.1 0.776 0.776 −1 −1 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.85 0.85 1 1.3 ⎯ ⎯ 2.2 2.3 ⎯ 1.3 Typ. ⎯ 0.68 0.55 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 0.8 ⎯ ⎯ 0.27 0.36 0.27 0.36 ⎯ ⎯ 1 1 2 2.4 160 20 2.4 2.5 0.1 2.8 Max 5.5 0.9 0.69 1 1 ⎯ ⎯ 0.5 0.5 12.4 6.7 0.824 0.824 1 1 ⎯ ⎯ ⎯ ⎯ −1 1 1.15 1.15 ⎯ ⎯ ⎯ ⎯ 2.6 2.7 ⎯ ⎯ Unit V mA mA μA μA V V V V μA μA V V μA μA Ω Ω Ω Ω μA μA MHz MHz ms ms °C °C V V V A Standby current VFB input voltage VFB input current High-side switch on-state resistance RDS (ON) (H) 1 VIN = 5 V, VEN = 5 V, ILX = −0.5 A RDS (ON) (H) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = −0.5 A RDS (ON) (L) 1 VIN = 5 V, VEN = 5 V, ILX = 0.5 A RDS (ON) (L) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = 0.5 A ILEAK (H) ILEAK (L) fosc1 fosc2 tss1 tss2 VIN = 5 V, VEN = 0 V, VLX = 0 V VIN = 5 V, VEN = 0 V, VLX = 5 V VIN = 5 V, VEN = 5 V VIN = 2.7 V, VEN = 2.7 V VIN = 5 V, VEN = 5 V, IOUT = 0 A VIN = 2.7 V, VEN = 2.7 V, IOUT = 0 A VIN = 5 V VIN = 5 V VIN = VEN VIN = VEN VIN = VEN VIN = 5 V Low-side switch on-state resistance High-side switch leakage current Low-side switch leakage current Oscillation frequency Soft-start time Detection temperature Hysteresis Detection votage Undervoltage lockout (UVLO) LX current limit Recovery voltage Hysteresis Thermal shutdown (TSD) TSD ΔTSD VUV VUVR ΔVUV ILIM Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 5 2008-05-22 TB7102AF Application Circuit Example VIN EN VIN VFB CIN CC TB7102AF LX PGND L RFB2 RFB1 VOUT COUT SGND GND GND Figure 1 TB7102AF Application Circuit Example Component values (@VIN = 5 V, VOUT = 3.3 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5 kΩ RFB2: Output voltage setting resistor = 2.4 kΩ L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values (@VIN = 5 V, VOUT = 1.2 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 22 μF (ceramic capacitor: GRM31CB30J226K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistance = 1.2 kΩ RFB2: Output voltage setting resistance = 2.4 kΩ L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values need to be adjusted, depending on the TB7102AF’s input/output conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: Input voltage (V) VIN: VIN − VOUT VOUT VOUT: Output voltage (V) L= ⋅ ········· (1) fosc ⋅ ΔIL VIN fosc: Oscillation frequency = 1 MHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7102AF is 1 A, ΔIL should be 0.3 A or so. Therefore, the inductor should have a current rating greater than the peak output current of 1.15 A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. When VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the VIN range into account. 6 2008-05-22 TB7102AF ΔIL L= VIN − VOUT VOUT ⋅ fosc ⋅ ΔIL VIN 5 V − 3.3 V 3.3 V ······ (2) ⋅ 1 MHz ⋅ 300 mA 5 V IL = 0 T= 1 fosc = 3.7 μH V TON = Τ ⋅ OUT VIN Figure 2 Inductor Current Waveform Setting the Output Voltage A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 3 based on the reference voltage of the error amplifier, which is connected to the Feedback pin, VFB. RFB1 should be up to 10 kΩ or so, because an extremely large value RFB1 incurs a delay due to parasitic capacitance at the VFB pin. If the difference between the input and output voltages is small, the output voltage may drop, depending on the load current conditions. For optimal operation, output voltage should be set to 0.8 V (typ.) at the minimum and to (VIN −1) V at the maximum. It is recommended that resistors with a precision of ±1% or higher be used for RFB1 and RFB2. ⎛ ⎞ R = 0.8 V × ⎜1 + FB1 ⎟ ······ (3) ⎜ R FB2 ⎟ ⎝ ⎠ FB Figure 3 Output Voltage Setting Resistors Output Capacitor Selection Use a ceramic capacitor as the output filter capacitor. Since a ceramic capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics (such as the JIS B characteristic). As a rule of thumb, its capacitance should be 10 μF or greater for applications where VOUT ≥ 2.0 V, and 20 μF or greater for applications where VOUT < 2.0 V. The capacitance should be set to an optimal value that meets the system's ripple voltage requirement and transient load response characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Component Values (@VIN = 5 V, Ta = 25°C) These values are presented only as a guide. The following values may need tuning depending on the TB7102AF’s input/output conditions and the board layout. Output Voltage Setting VOUT 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V Inductance L 3.3 μH 3.3 μH 3.3 μH 3.3 μH 3.3 μH Input Capacitance CIN 10 μF 10 μF 10 μF 10 μF 10 μF Output Capacitance COUT 22 μF 22 μF 22 μF 10 μF 10 μF Feedback Resistor RFB1 1.2 kΩ 2.1 kΩ 3.0 kΩ 5.1 kΩ 7.5 kΩ Feedback Resistor RFB2 2.4 kΩ 2.4 kΩ 2.4 kΩ 2.4 kΩ 2.4 kΩ RFB2 RFB1 ⎛ ⎞ R VOUT = VFB ⋅ ⎜1 + FB1 ⎟ ⎜ R FB2 ⎟ ⎝ ⎠ LX VOUT 7 2008-05-22 TB7102AF Undervoltage Lockout (UVLO) The TB7102AF has undervoltage lockout (UVLO) protection circuitry. The TB7102AF does not provide output voltage (VOUT) until the input voltage has reached VUVR (2.5 V typ.). UVLO has hysteresis of 0.1 V (typ.). After the switch turns on, if VIN drops below VUV (2.4 V typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage: VUVR Undervoltage lockout detection voltage: VUV Hysteresis: ΔVUV VIN GND Switching operation starts VOUT GND Switching operation stops Soft start Figure 4 Undervoltage Lockout Operation Thermal Shutdown (TSD) The TB7102AF provides thermal shutdown. When the junction temperature continues to rise and reaches TSD (160°C typ.), the TB7102AF goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 20°C. The device is enabled again when the junction temperature has dropped by approximately 20°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is used upon recovery from the TSD state . Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD Detection threshold: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Thermal Shutdown Operation 8 2008-05-22 TB7102AF Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. External components such as capacitors, inductor and resistors should be placed as close to the TB7102AF as possible. The TB7102AF has an ESD diode between the EN and VIN pins. The voltage between these pins should satisfy VEN − VIN < 0.3 V. Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1μF between the SGND and VIN pins. The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • • • • • 9 2008-05-22 TB7102AF Typical Performance Characteristics IIN – VIN 0.8 1.0 IIN – Tj VIN = 2.7 V VEN = 2.7 V VFB = VIN (mA) (mA) IIN Operating current, 6 VEN = VFB = VIN Tj = 25°C 0 2 4 0.8 0.6 IIN 0.6 Operating current, 0.4 0.4 0.2 0.2 0 0 -50 -25 0 25 50 75 100 125 Input voltage, VIN (V) Junction temperature, Tj (°C) IIN – Tj 1.0 VIN = 5 V VEN = 5 V VFB = VIN 2 VIH(EN), VIL(EN) – Tj VIN = 2.7 V (mA) 0.8 0.6 EN threshold voltage, VIH(EN), VIL(EN) (V) 1.5 IIN Operating current, VIH(EN) 1 0.4 VIL(EN) 0.5 0.2 0 -50 -25 0 25 50 75 100 125 0 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) Junction temperature, Tj (°C) 2 VIH(EN), VIL(EN) – Tj 20 VIN = 5.5 V 16 IIH(EN) – VIN VIN = 5.5 V Tj = 25°C 1.5 EN threshold voltage, VIH(EN), VIL(EN) (V) EN input current, IIH(EN) (μA) 125 VIH(EN) 1 VIL(EN) 0.5 12 8 4 0 0 -50 -25 0 25 50 75 100 0 1 2 3 4 5 6 Junction temperature, Tj (°C) EN input voltage, VEN (V) 10 2008-05-22 TB7102AF IIH(EN) – Tj 20 VIN = 5 V VEN = 5 V 2.6 VUV, VUVR – Tj 16 Undervoltage detection voltage, VUV, VUVR (V) Recovery voltage VUVR 2.5 EN input current, (μA) 12 IIH(EN) Detection voltage VUV 2.4 8 4 VEN = VIN 0 -50 2.3 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) Junction temperature, Tj (°C) VOUT – VIN 2 VEN = VIN Tj = 25°C 0.82 VFB – VIN VEN = VIN VOUT = 1.2 V Tj = 25°C VFB (V) Feedback pin voltage, (V) 1.5 0.81 VOUT Output voltage, 1 0.8 0.5 0.79 0 0.78 2.2 2.3 2.4 2.5 2.6 2.7 2 3 4 5 6 Input voltage, VIN (V) Input voltage, VIN (V) VFB – Tj 0.82 VIN = 2.7 V VOUT = 1.2 V VEN = VIN 0.82 VFB – Tj VIN = 5.5 V VOUT = 1.2 V VEN = VIN VFB (V) 0.81 VFB (V) Feedback pin voltage, 0.81 Feedback pin voltage, 0.8 0.8 0.79 0.79 0.78 -50 -25 0 25 50 75 100 125 0.78 -50 -25 0 25 50 75 100 125 Junction temperature, Tj (°C) Junction temperature, Tj (°C) 11 2008-05-22 TB7102AF fosc – VIN 1.2 1.2 VOUT = 1.2 V Tj = 25°C 1.1 fosc – Tj VIN = 5 V VOUT = 1.2 V 1.1 (MHz) Oscillation frequency, fosc 1 Oscillation frequency, fosc 2 3 4 5 6 (MHz) 1 0.9 0.9 0.8 0.8 -50 -25 0 25 50 75 100 125 Input voltage, VIN (V) Junction temperature, Tj (°C) ΔVOUT – IOUT 20 15 10 5 0 -5 -10 -15 -20 VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C 20 15 ΔVOUT – IOUT VIN = 3.3 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C (mV) (mV) ΔVOUT Output voltage, 10 5 0 -5 -10 -15 -20 Output voltage, ΔVOUT 0 0.2 0.4 0.6 0.8 1 0 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) 30 ΔVOUT – IOUT 20 VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C 15 ΔVOUT – VIN VOUT = 1.2 V, IOUT = 0.2 A L = 3.3 μH, COUT = 22 μF Ta = 25°C (mV) (mV) ΔVOUT Output voltage, 1 20 10 5 0 -5 10 15 ΔVOUT Output voltage, 10 0 -10 -20 -30 0 0.2 0.4 0.6 0.8 20 2 3 4 5 6 Output current, IOUT (A) Input voltage, VIN (V) 12 2008-05-22 TB7102AF ΔVOUT – VIN 30 VOUT = 3.3 V, IOUT = 0.2 A L = 3.3 μH, COUT = 10 μF T = 25°C 100 η – IOUT (mV) 20 80 10 Efficiency, η (%) ΔVOUT 60 Output voltage, 0 40 VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C -10 20 -20 0 3 4 5 6 0 0.2 0.4 -30 2 0.6 0.8 1 Input voltage, VIN (V) Output current, IOUT (A) η – IOUT 100 100 η – IOUT 80 80 Efficiency, η (%) 60 Efficiency, η (%) 60 40 20 VIN = 3.3 V VOUT = 1.2 V L = 3.3 μH COUT = 22 μF Ta = 25°C 0.2 0.4 0.6 0.8 1 40 20 VIN = 5 V VOUT = 3.3 V L = 3.3 μH COUT = 10 μF Ta = 25°C 0 0 0 0 0.2 0.4 0.6 0.8 1 Output current, IOUT (A) Output current, IOUT (A) Load Response Startup Characteristic VIN = 5 V VOUT = 1.2 V IOUT = 0 A L = 3.3 μH, COUT = 22 μF Ta = 25°C Output voltage VOUT (200 mV/Div) Output voltage VOUT: (500 mV/Div) VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C Output current: IOUT: (10 mA→800 mA→10 mA) Input Current IIN: (200 mA/Div) EN voltage: VEN:L→H 100 μs/Div 400 μs/Div 13 2008-05-22 TB7102AF Board Layout Example Component side silk Solder side silk Component side pattern Solder side pattern 14 2008-05-22 TB7102AF TP1 TP4 VIN P1 1 P2 GND 2 JP1 3 1 PGND 2V IN 3 EN 4 SGND IC1 C1 Lx 8 7 V FB TP3 L1 C2 R1 VOUT P3 N.C. N.C. 6 5 TP2 P4 GND R2 Figure 6 Circuit of the Board Layout Example External Component Examples Label IC1 C1 C2 R1 R2 L1 Vendor Toshiba Corporation Murata Manufacturing Co., Ltd. Murata Manufacturing Co., Ltd. KOA Corporation KOA Corporation Taiyo Yuden Co., Ltd. Part Number TB7102AF GRM21BB30J106K GRM21BB30J106K RK73H1ET RK73H1ET NP04SB3R3N 15 2008-05-22 TB7102AF Package Dimensions Weight: 0.017 g (typ.) 16 2008-05-22 TB7102AF RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 17 2008-05-22