TB7102F(TE85L,F)

TB7102F Toshiba BiCD Integrated Circuit Silicon Monolithic TB7102F Buck DC-DC Converter IC The TB7102F is a single-chip buck DC-DC converter IC. The TB7102F contains high-speed and low-on-resistance power MOSFETs for the main switch and synchronous rectifier to achieve high efficiency. Features • Enables up to 1 A of load current (IOUT) with a minimum of external components. • High efficiency (η = 95% typ.) (@VIN = 5 V, VOUT = 3.3 V and IOUT = 300 mA) Weight: 0.017 g (typ.) • Operating voltage (VIN) range: 2.7 V to 5.5 V • A high 1-MHz oscillation frequency (typ.) allows the use of small external components. • Uses internal phase compensation to achieve high efficiency with a minimum of external components. • Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. • Housed in a small surface-mount package (PS-8) with low thermal resistance. • Undervoltage lockout (UVLO), thermal shutdown (TSD) and overcurrent protection (OCP) Part Marking Pin Assignment Part Number (Abbrev.) Lot No. LX VFB N.C. N.C. 8 7 6 5 1 2 3 4 PGND VIN EN SGND 7102 * The dot (•) on the top surface indicates pin 1. *: The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. 1 2009-10-26 TB7102F Ordering Information Part Number Shipping TB7102F (TE85L, F) Embossed tape (3000 units per reel) Block Diagram VIN Undervoltage lockout & soft-start reference voltage EN Current detection Oscillator Slope compensation Driver PWM comparator LX Control logic Driver PGND Phase compensation Error amplifier VCOMP VFB Thermal shutdown 0.8 V (typ.) SGND Pin Description Pin No. Symbol Description 1 PGND 2 VIN Input pin This pin is placed in the standby state if VENB = low. Standby current is 1 μA or less. 3 EN Enable pin This pin is connected to an on-chip CMOS inverter. When EN ≥ 3.5 V (@VIN = 5 V), the control logic is allowed to operate and thus enable the switching operation of the output section. 4 SGND 5 N.C. No-connect 6 N.C. No-connect 7 VFB Feedback pin This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.). 8 LX Ground for the output section Ground for the control logic Switch pin This output is connected to the high-side P-channel MOSFETs and low-side N-channel MOSFET. 2 2009-10-26 TB7102F Timing Diagram Normal Operation OSC 0 IOUT 0 VOUT 0 VCOMP 0 IL 0 VLX TON OSC: IOUT: VOUT: VCOMP: IL: VLX: T 3 Internal oscillator output signal Converter output current Converter output voltage Output voltage of error amplifier Inductor current Switch pin voltage 2009-10-26 TB7102F Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN −0.3 to 6 V Enable pin voltage VEN −0.3 to 6 V VEN − VIN VEN − VIN < 0.3 V Feedback pin voltage VFB −0.3 to 6 V Switch pin voltage VLX −0.3 to 6 V ILX ±1.3 A PD 0.7 W Tjopr −40 to 125 °C Tj 150 °C Tstg −55 to 150 °C VEN−VIN voltage difference Switch pin current Power dissipation (Note 1) Operating junction temperature Junction temperature (Note 2) Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Thermal Resistance Characteristics Characteristics Symbol Thermal resistance, junction to ambient Rth (j-a) Max 178.6 (Note 1) Unit °C/W Note 1: Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Note 2: The TB7102F may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 4 2009-10-26 TB7102F Electrical Characteristics (unless otherwise specified: Tj = 25°C and VIN = 2.7 to 5.5 V) Characteristics Operating input voltage Operating current Standby current EN threshold voltage EN input current VFB input voltage VFB input current High-side switch on-state resistance Low-side switch on-state resistance Symbol Test Condition Min Typ. Max Unit VIN (OPR) ⎯ 2.7 ⎯ 5.5 V IIN1 VIN = 5 V, VEN = 5 V, VFB = 5 V ⎯ 0.68 0.9 mA IIN2 VIN = 2.7 V, VEN = 2.7 V, VFB = 2.7 V ⎯ 0.55 0.69 mA IIN (STBY) 1 VIN = 5 V, VEN = 0 V, VFB = 0 V ⎯ ⎯ 1 μA IIN (STBY) 2 VIN = 2.7 V, VEN = 0 V, VFB = 0 V ⎯ ⎯ 1 μA VIH (EN) 1 VIN = 5 V 3.5 ⎯ ⎯ V VIH (EN) 2 VIN = 2.7 V 1.89 ⎯ ⎯ V VIL (EN) 1 VIN = 5 V ⎯ ⎯ 1.5 V VIL (EN) 2 VIN = 2.7 V ⎯ ⎯ 0.81 V IIH (EN) 1 VIN = 5 V, VEN = 5 V 7.6 ⎯ 12.4 μA IIH (EN) 2 VIN = 2.7 V, VEN = 2.7 V 4.1 ⎯ 6.7 μA VFB1 VIN = 5 V, VEN = 5 V, IOUT = 10 mA 0.776 0.8 0.824 V VFB2 VIN = 2.7 V, VEN = 2.7 V, IOUT = 10 mA 0.776 0.8 0.824 V IFB1 VIN = 5 V, VEN = 5 V −1 ⎯ 1 μA IFB2 VIN = 2.7 V, VEN = 2.7 V −1 ⎯ 1 μA RDS (ON) (H) 1 VIN = 5 V, VEN = 5 V, ILX = −0.5 A ⎯ 0.27 ⎯ Ω RDS (ON) (H) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = −0.5 A ⎯ 0.36 ⎯ Ω RDS (ON) (L) 1 VIN = 5 V, VEN = 5 V, ILX = 0.5 A ⎯ 0.27 ⎯ Ω RDS (ON) (L) 2 VIN = 2.7 V, VEN = 2.7 V, ILX = 0.5 A ⎯ 0.36 ⎯ Ω High-side switch leakage current ILEAK (H) VIN = 5 V, VEN = 0 V, VLX = 0 V ⎯ ⎯ −1 μA Low-side switch leakage current ILEAK (L) VIN = 5 V, VEN = 0 V, VLX = 5 V ⎯ ⎯ 1 μA fosc1 VIN = 5 V, VEN = 5 V 0.85 1 1.15 MHz fosc2 VIN = 2.7 V, VEN = 2.7 V 0.85 1 1.15 MHz tss1 VIN = 5 V, VEN = 5 V, IOUT = 0 A 1 2 ⎯ ms tss2 VIN = 2.7 V, VEN = 2.7 V, IOUT = 0 A 1.3 2.4 ⎯ ms TSD VIN = 5 V ⎯ 160 ⎯ °C Hysteresis ΔTSD VIN = 5 V ⎯ 20 ⎯ °C Detection voltage VUV VIN = VEN 2.2 2.4 2.6 V Recovery voltage VUVR VIN = VEN 2.3 2.5 2.7 V Hysteresis ΔVUV VIN = VEN ⎯ 0.1 ⎯ V ILIM VIN = 5 V 1.3 2.8 ⎯ A Oscillation frequency Soft-start time Thermal shutdown (TSD) Undervoltage lockout (UVLO) LX current limit Detection temperature Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 5 2009-10-26 TB7102F Application Circuit Example VIN TB7102F VFB LX SGND PGND L VOUT COUT VIN RFB2 RFB1 CC CIN EN GND GND Figure 1 TB7102F Application Circuit Example Component values (@VIN = 5 V, VOUT = 3.3 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5 kΩ RFB2: Output voltage setting resistor = 2.4 kΩ L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values (@VIN = 5 V, VOUT = 1.2 V, Ta = 25°C) These values are presented only as a guide. CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM21BB30J106K from Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 22 μF (ceramic capacitor: GRM31CB30J226K from Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistance = 1.2 kΩ RFB2: Output voltage setting resistance = 2.4 kΩ L: Inductor = 3.3 μH (NP04SB3R3N from Taiyo Yuden Co., Ltd.) Component values need to be adjusted, depending on the TB7102F’s input/output conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: Input voltage (V) VIN: VIN − VOUT VOUT V : Output voltage (V) OUT L= ⋅ ········· (1) fosc ⋅ ΔIL VIN fosc: Oscillation frequency = 1 MHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7102F is 1 A, ΔIL should be 0.3 A or so. Therefore, the inductor should have a current rating greater than the peak output current of 1.15 A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. When VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the VIN range into account. 6 2009-10-26 L= = VIN − VOUT VOUT ⋅ fosc ⋅ ΔIL VIN ΔIL TB7102F IL 5 V − 3.3 V 3.3 V ······ (2) ⋅ 1 MHz ⋅ 300 mA 5 V 0 T= = 3.7 μH V TON = Τ ⋅ OUT VIN 1 fosc Figure 2 Inductor Current Waveform Setting the Output Voltage ⎛ ⎞ R VOUT = VFB ⋅ ⎜⎜1 + FB1 ⎟⎟ R FB2 ⎠ ⎝ LX FB ⎛ ⎞ R = 0.8 V × ⎜⎜1 + FB1 ⎟⎟ ······ (3) R FB2 ⎠ ⎝ RFB2 RFB1 A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 3 based on the reference voltage of the error amplifier, which is connected to the Feedback pin, VFB. RFB1 should be up to 10 kΩ or so, because an extremely large value RFB1 incurs a delay due to parasitic capacitance at the VFB pin. If the difference between the input and output voltages is small, the output voltage may drop, depending on the load current conditions. For optimal operation, output voltage should be set to 0.8 V (typ.) at the minimum and to (VIN −1) V at the maximum. It is recommended that resistors with a precision of ±1% or higher be used for RFB1 and RFB2. VOUT Figure 3 Output Voltage Setting Resistors Output Capacitor Selection Use a ceramic capacitor as the output filter capacitor. Since a ceramic capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics (such as the JIS B characteristic). As a rule of thumb, its capacitance should be 10 μF or greater for applications where VOUT ≥ 2.0 V, and 20 μF or greater for applications where VOUT < 2.0 V. The capacitance should be set to an optimal value that meets the system's ripple voltage requirement and transient load response characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Component Values (@VIN = 5 V, Ta = 25°C) These values are presented only as a guide. The following values may need tuning depending on the TB7102F’s input/output conditions and the board layout. Output Voltage Setting Inductance Input Capacitance Output Capacitance Feedback Resistor Feedback Resistor VOUT L CIN COUT RFB1 RFB2 1.2 V 3.3 μH 10 μF 22 μF 1.2 kΩ 2.4 kΩ 1.5 V 3.3 μH 10 μF 22 μF 2.1 kΩ 2.4 kΩ 1.8 V 3.3 μH 10 μF 22 μF 3.0 kΩ 2.4 kΩ 2.5 V 3.3 μH 10 μF 10 μF 5.1 kΩ 2.4 kΩ 3.3 V 3.3 μH 10 μF 10 μF 7.5 kΩ 2.4 kΩ 7 2009-10-26 TB7102F Undervoltage Lockout (UVLO) The TB7102F has undervoltage lockout (UVLO) protection circuitry. The TB7102F does not provide output voltage (VOUT) until the input voltage has reached VUVR (2.5 V typ.). UVLO has hysteresis of 0.1 V (typ.). After the switch turns on, if VIN drops below VUV (2.4 V typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage: VUVR Undervoltage lockout detection voltage: VUV VIN Hysteresis: ΔVUV GND Switching operation starts VOUT GND Soft start Switching operation stops Figure 4 Undervoltage Lockout Operation Thermal Shutdown (TSD) The TB7102F provides thermal shutdown. When the junction temperature continues to rise and reaches TSD (160°C typ.), the TB7102F goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 20°C. The device is enabled again when the junction temperature has dropped by approximately 20°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is used upon recovery from the TSD state. Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD Detection threshold: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Thermal Shutdown Operation 8 2009-10-26 TB7102F Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. • External components such as capacitors, inductor and resistors should be placed as close to the TB7102F as possible. • The TB7102F has an ESD diode between the EN and VIN pins. The voltage between these pins should satisfy VEN − VIN < 0.3 V. • Operation might become unstable due to board layout. In that case, add a decoupling capacitor (CC) of 0.1 μF to 1μF between the SGND and VIN pins. • The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. 9 2009-10-26 TB7102F Typical Performance Characteristics IIN – VIN IIN – Tj (mA) 1.0 Operating current, Operating current, IIN 0.6 IIN (mA) 0.8 0.4 0.2 VEN = VFB = VIN Tj = 25°C 0 0 2 4 Input voltage, VIN 0.8 0.6 0.4 0.2 0 6 VIN = 2.7 V VEN = 2.7 V VFB = VIN -50 -25 (V) 75 Tj 125 (°C) VIN = 2.7 V 0.6 0.4 2 VIH(EN) 1 VIL(EN) 0.2 0 0 -50 -25 0 25 50 Junction temperature, 75 Tj 100 -50 125 -25 (°C) 0 25 VIH(EN), VIL(EN) – Tj 75 50 Junction temperature, Tj 100 125 (°C) IIH(EN) – VEN 20 5 VIN = 5.5 V Tj = 25°C VIN = 5.5 V 16 4 VIH(EN) EN input current, IIH(EN) (μA) EN threshold voltage, VIH(EN), VIL(EN) (V) 100 VIH(EN), VIL(EN) – Tj EN threshold voltage, VIH(EN), VIL(EN) (V) (mA) IIN Operating current, 50 3 VIN = 5 V VEN = 5 V VFB = VIN 0.8 25 Junction temperature, IIN – Tj 1.0 0 3 2 VIL(EN) 8 4 1 0 12 0 -50 -25 0 25 50 Junction temperature, 75 Tj 100 125 0 (°C) 1 2 3 4 EN input voltage, VEN 10 5 6 (V) 2009-10-26 TB7102F IIH(EN) – Tj VUV, VUVR – Tj 20 2.6 Undervoltage detection voltage, VUV, VUVR (V) VIN = 5 V VEN = 5 V (μA) 12 IIH(EN) 8 4 Recovery voltage VUVR 2.5 Detection voltage VUV 2.4 VEN = VIN 0 2.3 -50 -25 0 25 50 75 Junction temperature, 100 Tj 125 -50 -25 (°C) 0 VOUT – VIN VFB (V) (V) Feedback pin voltage, VOUT Output voltage, 1 0.5 2.4 2.5 VIN 2.6 0.79 2.7 2 3 4 Input voltage, VFB (V) Feedback pin voltage, 0.8 0.79 50 Junction temperature, VIN 6 (V) VFB – Tj 0.81 25 5 0.82 VIN = 2.7 V VOUT = 1.2 V VEN = VIN 0 (°C) 0.8 VFB – Tj -25 Tj 125 0.81 (V) 0.82 0.78 -50 100 VEN = VIN VOUT = 1.2 V Tj = 25°C 0.78 2.3 2.2 75 VFB – VIN 1.5 Input voltage, VFB (V) 50 0.82 VEN = VIN Tj = 25°C 0 25 Junction temperature, 2 Feedback pin voltage, EN input current, 16 75 Tj 100 0.81 0.8 0.79 0.78 125 (°C) VIN = 5.5 V VOUT = 1.2 V VEN = VIN -50 -25 0 25 50 Junction temperature, 11 75 Tj 100 125 (°C) 2009-10-26 TB7102F fosc – VIN fosc – Tj 1.2 (MHz) VOUT = 1.2 V Tj = 25°C 1.1 Oscillation frequency, fosc Oscillation frequency, fosc (MHz) 1.2 1 0.9 0.8 2 3 4 Input voltage, 5 VIN VIN = 5 V VOUT = 1.2 V 1.1 1 0.9 0.8 -50 6 (V) -25 0 ΔVOUT – IOUT (mV) ΔVOUT 5 0 -5 -10 0 0.2 10 5 0 -5 -10 0.4 0.6 0.8 -20 0. 1 (A) 0.2 0.4 0.6 Output current, IOUT ΔVOUT – IOUT 30 1 0.8 (A) ΔVOUT – VIN 20 VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C VOUT = 1.2 V, IOUT = 0.2 A L = 3.3 μH, COUT = 22 μF Ta = 25°C (mV) 15 ΔVOUT (mV) (°C) -15 Output current, IOUT ΔVOUT 125 VIN = 3.3 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C 15 Output voltage, (mV) ΔVOUT Output voltage, VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C -15 0 Output voltage, Output voltage, Tj 100 ΔVOUT – IOUT 10 10 75 20 15 20 50 Junction temperature, 20 -20 25 -10 -20 10 5 0 -5 10 15 -30 0 0.2 0.4 0.6 Output current, IOUT 0.8 20 1 (A) 2 3 4 Input voltage, 12 5 VIN 6 (V) 2009-10-26 TB7102F ΔVOUT – VIN η – IOUT 100 VOUT = 3.3 V, IOUT = 0.2 A L = 3.3 μH, COUT = 10 μF T = 25°C 80 Efficiency, η (%) (mV) 10 Output voltage, 20 ΔVOUT 30 0 -10 60 40 VIN = 5 V, VOUT = 1.2 V L = 3.3 μH, COUT = 22 μF Ta = 25°C 20 -20 -30 0 2 3 4 Input voltage, 5 VIN 0 6 0.2 (V) 0.4 1 (A) η – IOUT 100 80 80 Efficiency, η (%) Efficiency, η (%) η – IOUT 60 VIN = 3.3 V VOUT = 1.2 V L = 3.3 μH COUT = 22 μF Ta = 25°C 20 0.8 Output current, IOUT 100 40 0.6 60 40 VIN = 5 V VOUT = 3.3 V L = 3.3 μH COUT = 10 μF Ta = 25°C 20 0 0 0 0.2 0.4 0.6 Output current, IOUT 0.8 1 0 (A) 0.4 0.6 0.8 Output current, IOUT Load Response 1 (A) Startup Characteristic VIN = 5 V VOUT = 1.2 V IOUT = 0 A L = 3.3 μH, COUT = 22 μF Ta = 25°C Output voltage VOUT (200 mV/Div) VIN = 5 V, VOUT = 3.3 V L = 3.3 μH, COUT = 10 μF Ta = 25°C 0.2 Output voltage VOUT: (500 mV/Div) Input Current IIN: (200 mA/Div) Output current: IOUT: (10 mA→800 mA→10 mA) EN voltage: VEN:L→H 100 μs/Div 400 μs/Div 13 2009-10-26 TB7102F Board Layout Example Component side silk Solder side silk Component side pattern Solder side pattern 14 2009-10-26 TB7102F TP1 TP4 TP3 IC1 VIN C1 P1 1 2 P2 GND JP1 1 PGND 2 V IN 3 EN FB N.C. 4 SGND N.C. 3 VOUT P3 L1 Lx 8 7 V C2 6 R1 5 P4 GND TP2 R2 Figure 6 Circuit of the Board Layout Example External Component Examples Label Vendor Part Number IC1 Toshiba Corporation TB7102F C1 Murata Manufacturing Co., Ltd. GRM21BB30J106K C2 Murata Manufacturing Co., Ltd. GRM21BB30J106K R1 KOA Corporation RK73H1ET R2 KOA Corporation RK73H1ET L1 Taiyo Yuden Co., Ltd. NP04SB3R3N 15 2009-10-26 TB7102F Package Dimensions Weight: 0.017 g (typ.) 16 2009-10-26 TB7102F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 17 2009-10-26