TB7107FN(TE85L,F)

TB7107FN TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB7107FN Buck DC-DC Converter IC The TB7107FN is a single-chip buck DC-DC converter IC utilizing a chopper circuit. The TB7107FN adopts bootstrap system and contains high-speed and low-on-resistance N-channel MOSFETs for the high side main switch to achieve high efficiency. Features • • • • • • • • • • Enables up to 2 A of load current (IOUT) with a minimum of external SON8-P-0303-0.65A components. High efficiency: η = 87% (typ.) (@VIN = 12 V, VOUT = 3.3 V and IOUT Weight: 0.017 g (typ.) = 0.7A) Operating voltage range: VIN = 4.5 V to 20 V Low ON-resistance: RDS (ON) = 0.2 Ω (high-side) typical (@VIN = 12 V, Tj = 25°C) Oscillation frequency: fOSC = 380 kHz (typ.) Reference voltage: VFB = 0.8 V ±2.25%(@ Tj = 25 ℃) Because of an external phase compensation element, the optimal phase compensation according to the output filter capacitor can be realized. Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. Housed in a small surface-mount package (PS-8) with low thermal resistance. Soft-start time adjustable by an external capacitor Part Marking Pin Assignment Part Number (or abbreviation code) SS EN COMP 8 7 6 VFB 5 Lot No. 7107 The dot (•) on the top surface indicates pin 1. *: 1 2 3 4 BOOT VIN LX GND The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system to avoid such overloads upon the Product, and to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. Start of commercial production 2009-10 1 2013-11-01 TB7107FN Ordering Information Part Number Shipping TB7107FN (TE85L, F) Embossed tape (3000 units per reel) Block Diagram VIN Regulator Current detection Under voltage lockout Constant-current source (5 μA) Error Amplifier VFB EN BOOT Driver LX Short-Circuit Protection + Soft Start - Control Logic - SS + Slope Compensation Oscillator Ref.Voltage (0.8 V) GND COMP Pin Description Pin No. Symbol 1 BOOT 2 VIN 3 LX 4 GND 5 VFB 6 COMP Description Bootstrap pin This pin is connected to Bootstrap capacitor. A 0.1 μF bootstrap capacitor is required between BOOT pin and LX pin. Input pin This pin is placed in the standby state if EN = low. Standby current is 60 μA (@VIN=12V) or less. Switch pin This pin is connected to high-side N-channel MOSFET. Ground pin Feedback pin This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.). Phase compensation pin Pin for connecting an error amplifier phase compensation resistor and capacitor. Enable pin 7 EN When VEN ≥ 1.8 V (@ VIN = 12 V), the internal circuitry is allowed to operate and thus enable the switching operation of the output section. When VEN ≤ 0.5 V (@ VIN =12 V), the internal circuitry is disabled, putting the TB7107FN in Standby mode. This pin has an internal pull-up current of 15 µA(typ.). Soft-start pin The soft-start time can be adjusted with an external capacitor. 8 SS The external capacitor is charged from a 5 μA (typ.) constant-current source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The external capacitor is discharged when EN = low and in case of undervoltage lockout or thermal shutdown. 2 2013-11-01 TB7107FN Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VIN -0.3 to 25 V VBOOT -0.3 to 28 V VBOOT -VLX -0.3 to 6 V Input pin voltage Bootstrap pin voltage Bootstrap pin - Switch pin voltage Switch pin voltage VLX -0.3 to 25 V Feedback pin voltage (Note 1) VFB -0.3 to 6 V Enable pin voltage VEN -0.3 to 25 V Soft-start pin voltage VSS -0.3 to 6 V VCOMP -0.3 to 6 V ILX -2.3 A PD 0.9 W Tjopr -40 to 125 ℃ Tj 150 °C Tstg -55 to 150 °C Phase compensation pin voltage Switch pin current Power dissipation (Note 2) Operating junction temperature Junction temperature (Note 3) Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Note 1: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TB7107FN’s switching. Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient Rth (j-a) 110.2 (Note 2) °C/W Note 2: Glass epoxy board Material: FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Note 3: The TB7107FN may go into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 3 2013-11-01 TB7107FN Electrical Characteristics (Tj = 25°C, VIN = 4.5 to 20 V, unless otherwise specified) Characteristics Operating input voltage Operating current Symbol Test Condition Min Typ. Max Unit VIN(OPR) ⎯ 4.5 ⎯ 20 V ⎯ 1.8 2.5 mA 0.8 ⎯ VIN -2 V ⎯ ⎯ 60 μA ⎯ ⎯ 10 μA IIN Output voltage range VIN = 12V ,VEN = 5V ,VFB = 2 V VOUT(OPR) VEN = VIN Standby current IIN(STBY) High-side switch leakage current ILEAK(H) VIN = 12 V , VEN = 0 V VFB = 0.8 V VIN = 12 V, VEN = 0 V VFB = 0.8 V , VLX = 0 V VIH(EN) VIN = 12 V 1.8 ⎯ ⎯ VIL(EN) VIN = 12V ⎯ ⎯ 0.5 IIH(EN) VIN = 12V, VEN = 5 V -5 ⎯ 5 IIL(EN) VIN = 12V, VEN = 0 V ⎯ -15 ⎯ VFB input voltage VFB VIN = 12 V , VEN = 5 V 0.782 0.8 0.818 V VFB input current IFB -1 ⎯ 1 μA ⎯ -40 ⎯ EN threshold voltage EN input current ICOMP(H) Phase compensation input current ICOMP(L) High-side switch on-state resistance RDS(ON)(H) Low-side switch on-state resistance RDS(ON)(L) VIN = 12 V , VEN = 5 V VFB = 2V VIN = 12 V , VEN = 5 V VFB = 0.7V , VCOMP = 0.5 V VIN = 12 V , VEN = 5 V VFB = 0.9V , VCOMP = 0.5 V VIN = 12V , VEN = 5V ILX = - 1A VIN = 12 V , VEN =5 V ILX = 100 mA VIN = 12V , VEN= 5V V μA μA ⎯ 40 ⎯ ⎯ 0.2 ⎯ Ω ⎯ 1.5 ⎯ Ω 300 380 460 kHz Oscillation frequency fOSC Internal soft-start time tSS Measured between 0% and 90%points at VOUT 0.5 1 2 ms External soft-start charge current ISS VIN = 12 V , VEN = 5 V -3 -5 -8 μA Dmax VIN = 12 V , VEN = 5 V ⎯ 88 ⎯ % TSD VIN = 12 V , VEN = 5 V ⎯ 160 ⎯ Hysteresis ΔTSD VIN = 12 V , VEN = 5 V ⎯ 15 ⎯ Detection voltage VUV VEN = VIN 2.9 3.2 3.5 Recovery voltage VUVR VEN = VIN 3.2 3.5 3.8 Hysteresis ΔVUV VEN = VIN ⎯ 0.3 ⎯ 2.9 3.5 ⎯ VIN = 12 V , VEN= 5V , IOUT = 0A High-side switch duty cycle Thermal shutdown (TSD) Undervoltage lockout (UVLO) LX current limit Detection temperature ILIM VIN = 4.5V to 20 V , VEN= 5V VOUT = 2 V °C V A Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. 4 2013-11-01 TB7107FN Application Circuit Example Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for COUT. CBOOT VIN=4.5 V to 20 V VIN EN BOOT EN LX COMP RP TB7107FN SS VOUT L RFB1 VFB COUT CIN GND CP GND RFB2 SBD CSS GND Figure 1 TB7107FN Application Circuit Example Component values (reference value@ VIN = 12 V, VOUT = 3.3 V, Ta = 25°C) CIN: Input filter capacitor = 10 μF (ceramic capacitor: GRM31CR71E106K manufactured by Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 10 μF (ceramic capacitor: GRM31CR71E106K manufactured by Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5 kΩ RFB2: Output voltage setting resistor = 2.4 kΩ CP: Phase compensation capacitance RP: Phase compensation resistance L: Inductor = 10 μH (SLF10165T-100M3R83PF or SLF7055T-100M2R5-3PF manufactured by TDK-EPC Corporation) SBD: Schottky barrier diode CRS30I30A (manufactured by Toshiba Corporation) CBOOT: Bootstrap capacitor = 0.1 μF (GRM188R71H104J manufactured by Murata Manufacturing Co., Ltd.) CSS is a capacitor for adjusting the soft-start time. Examples of Component Values (For Reference Only) RFB2 Phase Compensation Capacitance CP Phase Compensation Resistance RP 7.5 kΩ 15 kΩ 4700 pF 10 kΩ 20 μF 16 kΩ 18 kΩ 4700 pF 10 kΩ 10 μF 20 μF 15 kΩ 12 kΩ 2200 pF 15 kΩ 10 μH 10 μF 20 μF 5.1 kΩ 2.4 kΩ 2200 pF 22 kΩ 3.3 V 10 μH 10 μF 20 μF 7.5 kΩ 2.4 kΩ 2200 pF 22 kΩ 5.0V 10 μH 10 μF 20 μF 27 kΩ 5.1 kΩ 2200 pF 33 kΩ Output Voltage Setting Inductance Input Capacitance Output Capacitance Feedback Resistor Feedback Resistor VOUT L CIN COUT RFB1 1.2 V 10 μH 10 μF 20 μF 1.51 V 10 μH 10 μF 1.8 V 10 μH 2.5 V Component values need to be adjusted, depending on the TB7107FN’s I/O conditions and the board layout. 5 2013-11-01 TB7107FN Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: VIN: Input voltage (V) VIN − VOUT VOUT VOUT: Output voltage (V) ············· (1) L= ⋅ fOSC ⋅ ΔIL VIN fOSC: Oscillation frequency = 380 kHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output current of the TB7107FN is 2.0 A, ΔIL should be 0.6 A or so. The inductor should have a current rating greater than the peak output current of 2.3 A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. L= = VIN − VOUT VOUT ⋅ fOSC ⋅ ΔIL VIN 12 V − 3.3 V 3.3 V ⋅ 380kHz ⋅ 0.6A 12 V ΔIL When VIN = 12 V and VOUT = 3.3 V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the input voltage range into account. IL 0 T= = 10.5 μH······························ (2) 1 fosc V TON = Τ ⋅ OUT VIN Figure 2 Inductor Current Waveform Setting the Output Voltage A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 3 based on the reference voltage of the error amplifier (0.8 V typ.), which is connected to the Feedback pin, VFB. RFB1 should be up to 30 kΩ or so, because an extremely large-value RFB1 incurs a delay due to parasitic capacitance at the VFB pin. It is recommended that resistors with a precision of ±1% or higher be used for RFB1 and RFB2. LX VFB VOUT RFB2 RFB1 ⎛ ⎞ R VOUT = VFB ⋅ ⎜⎜ 1 + FB1 ⎟⎟ R FB2 ⎠ ⎝ ⎛ R ⎞ = 0.8 V ⋅ ⎜⎜1 + FB1 ⎟⎟ ········ (3) ⎝ R FB2 ⎠ Figure 3 Output Voltage Setting Resistors Setting the Phase Compensation Circuit Connect a resister (RP) in series with a capacitor (CP) to COMP pin as a phase compensation. The following calculated value provides an estimation of the constant of phase compensation. F0=Frequency in loop gain being 0dB ：Set approximately to one-tenth of the switching frequency Fz=Frequency of pole-zero ：Set approximately to one-tenth of the F0 1 1 Fz = ⋅ ·········· (4) Design value (reference): 2π Cp ⋅ Rp Gm(EA)=Error Amp Gm：200(μS) Gm(IS)=Current detection circuit Gm：4(S) The optimum value of phase compensation may change with the characteristics of COUT and another. Carry out sufficient evaluation on an actual operating condition. R FB2 1 Gm(IS) F0 = ⋅ ⋅ Gm(EA)Rp ⋅ 2π R FB1 + R FB2 C OUT 6 2013-11-01 TB7107FN Output Filter Capacitor Selection Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics. The large capacitance improves load response characteristics. As a rule of thumb, its capacitance should be 10 μF or greater for applications. The capacitance should be set to an optimal value that meets the system’s ripple voltage requirement and transient load response characteristics. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Rectifier Selection A Schottky barrier diode should be externally connected to the TB7107FN as a rectifier between the LX and GND pins. It is recommended that either CRS30I30A, be used as the Schottky barrier diode. If a large voltage overshoot is on the LX pin, it reduces the voltage to connect a series CR network consisting of a resistor of RS = 4.7 Ω and a capacitor of CS = 470 pF with the Schottky barrier diode in parallel. Power loss of the Schottky barrier diode tends to increase due to an increased reverse current caused by the rise in ambient temperature and self-heating due to a supplied current. The rated current should therefore be derated to allow for such conditions in selecting an appropriate diode. Soft-Start Feature The TB7107FN has a soft-start feature. If the SS pin is left open, the soft-start time, tSS, for VOUT defaults to 1 ms (typ.) internally. The soft-start time can be extended by adding an external capacitor (CSS) between the SS and GND pins. The soft-start time can be calculated as follows: t SS2 = 0.16 ⋅ CSS ·························· (5) tSS2: Soft-start time (in seconds) when an external capacitor is connected between SS and GND. CSS: Capacitor value (μF) The soft-start feature is activated when the TB7107FN exits the undervoltage lockout (UVLO) state after power-up and when the voltage at the EN pin has changed from logic low to logic high. Overcurrent Protection（OCP） The TB7107FN has built-in overcurrent protection with pulse skip. When the peak current of LX pin exceeds ILIM=3.5A(typ.), the ON time of the high-side switch(internal) will be limited. Switching frequency will be reduced and output current will be restricted further if output voltage falls and the voltage of VFB pin drops below the overcurrent pulse skip detection voltage VLOC (0.3V typ.) during overcurrent protection . Undervoltage Lockout (UVLO) The TB7107FN has undervoltage lockout (UVLO) protection circuitry. The TB7107FN does not provide output voltage (VOUT) until the input voltage has reached VUVR (3.5 V typ.). UVLO has hysteresis of 0.3 V (typ.). After the switch turns on, if VIN drops below VUV (3.2 V typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage VUVR VIN Undervoltage lockout detection voltage VUV Hysteresis: ΔVUV GND Switching operation starts VOUT GND Switching operation stops Soft start Figure 4 Undervoltage Lockout Operation 7 2013-11-01 TB7107FN Thermal Shutdown (TSD) The TB7107FN provides thermal shutdown. When the junction temperature continues to rise and reaches TSD (160°C typ.), the TB7107FN goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 15°C (typ.). The device is enabled again when the junction temperature has dropped by approximately 15°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is activated upon recovery from TSD state. Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD detection temperature: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Thermal Shutdown Operation Usage Precautions ・ The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. ・ External components such as capacitors, inductors and resistors should be placed as close to the TB7107FN as possible. ・ CIN should be connected as close to the GND and VIN1 pins as possible. Operation might become unstable due to board layout. ・ The minimum programmable output voltage is 0.8 V (typ.). If the difference between the input and output voltages is small, the output voltage might not be regulated accurately and fluctuate significantly. ・ GND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND pattern as large as possible for greater of heat radiation. ・ The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. ・ The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. 8 2013-11-01 TB7107FN Typical Performance Characteristics IIN – VIN IIN – Tj (mA) 4 3 IIN 2 IIN (mA) 2.5 Operating current Operating current 1.5 1 0.5 VEN = VFB = VIN Tj = 25°C 0 2 1 VEN = VIN = 12 V VFB = 0 V 0 0 5 10 15 Input voltage VIN 20 -50 (V) -25 0 25 50 75 Junction temperature IIN – Tj Tj (°C) VIH(EN), VIL(EN) – Tj (mA) VIN = 12 V EN threshold voltage VIH(EN), VIL(EN) (V) IIN 125 2 4 Operating current 100 3 2 1 1.5 VIH(EN) 1 VIL(EN) 0.5 VEN = VIN = 4.5 V VFB = 0 V 0 0 -50 -25 0 25 50 Junction temperature 75 100 Tj (°C) 125 -50 -25 0 25 50 Junction temperature 75 Tj 100 125 (°C) IIH(EN) – VEN 80 VIN = 12 V Tj = 25°C EN input current IIH(EN) (μA) 60 40 20 0 -20 0 5 10 EN input voltage 15 VEN 20 (V) 9 2013-11-01 TB7107FN VOUT – VIN VUV, VUVR – Tj 4 VEN = VIN VOUT = 3.3 V Tj = 25°C (V) 3.8 3 VOUT Recovery voltage VUVR 3.6 3.4 Output voltage Undervoltage lockout voltage VUV,VUVR (V) 4.0 Detection voltage VUV 3.2 3.0 2 1 VEN = VIN 2.8 -50 -25 0 25 50 75 Junction temperature Tj 100 0 125 2.5 VIN = 12 V VOUT = 1.2 V VEN = VIN VFB (V) VEN = VIN VOUT = 1.2 V Tj = 25°C (V) 0.82 Feedback pin voltage VFB Feedback pin voltage (V) 0.84 0.84 0.8 0.78 0.82 0.8 0.78 0.76 0 5 10 Input voltage 15 20 VIN -50 25 (V) -25 0 25 50 Junction temperature fOSC – VIN 75 Tj 100 125 (°C) fOSC – Tj 440 440 420 (kHz) 400 fOSC 400 Oscillation frequency (kHz) VIN = 12 V fOSC Tj = 25°C 420 Oscillation frequency 4 VIN VFB – Tj VFB – VIN 0.76 3.5 3 Input voltage (°C) 380 360 340 5 10 Input voltage 15 VIN 20 360 340 320 -50 320 0 380 25 (V) -25 0 25 50 Junction temperature 10 75 Tj 100 125 (°C) 2013-11-01 TB7107FN ISS – VIN ISS – Tj 0 Tj = 25°C External soft-start charge current ISS (μA) External soft-start charge current ISS (μA) 0 -2 -4 -6 -8 -10 0 5 10 Input voltage 15 VIN 20 VIN = 12 V -2 -4 -6 -8 -10 -50 25 (V) -25 0 25 50 75 Junction temperature ISS – Tj Tj 125 (°C) Overcurrent Protection 4 0 100 -2 (V) -4 VOUT Output voltage External soft-start charge current ISS (μA) VIN = 4.5 V -6 -8 2 VIN = 12 V VOUT = 3.3 V L = 10μH Ta = 25° 1 0 -10 -50 3 -25 0 25 50 Junction temperature 75 Tj 100 2 125 3 Output current (°C) 11 4 IOUT 5 (A) 2013-11-01 TB7107FN ΔVOUT – IOUT ΔVOUT – IOUT 100 50 (mV) 0 ΔVOUT VIN = 12 V , VOUT = 5 V L = 10 μH , COUT = 10 μF ×2 Ta = 25°C , LS:CRS30I30A Output voltage Output voltage ΔVOUT (mV) 100 -50 -100 0 0.5 1 Output current 1.5 IOUT VIN = 12 V , VOUT = 3.3 V L = 10 μH , COUT = 10 μF ×2 Ta = 25°C , LS:CRS30I30A 50 0 -50 -100 2 0 (A) 0.5 Output current ΔVOUT – IOUT (A) 90 η (%) 50 0 Efficiency (mV) ΔVOUT IOUT 2 100 VIN = 12 V , VOUT = 2.5V L = 10 μH , COUT = 10 μF ×2 Ta = 25°C , LS:CRS30I30A -50 80 70 VIN = 12 V , VOUT = 5V L = 10 μH, COUT = 10 μF ×2 Ta = 25°C LS:CRS30I30A 60 -100 1.5 η – IOUT 100 Output voltage 1 0 50 0.5 1 Output current 1.5 IOUT 2 0 (A) 0.5 1 Output current η – IOUT 1.5 IOUT 2 (A) η – IOUT 90 90 VIN = 12 V , VOUT = 3.3 V L = 10 μH, COUT = 10 μF ×2 Ta = 25°C LS:CRS30I30A 60 50 0 η 70 80 Efficiency η 80 Efficiency (%) 100 (%) 100 70 60 50 0.5 1 Output current 1.5 IOUT VIN = 12 V , VOUT = 2.5V L = 10 μH, COUT = 10 μF ×2 Ta = 25°C LS:CRS30I30A 2 (A) 0 0.5 1 Output current 12 1.5 IOUT 2 (A) 2013-11-01 TB7107FN Startup Characteristics (Internal Soft-Start Time) VIN = 12 V VOUT = 3.3 V Ta = 25°C L = 10μH COUT = 10 μF ×2 Startup Characteristics (CSS = 0.1 μF) VIN = 12V VOUT = 3.3 V Ta = 25°C L = 10 μH COUT = 10 μF ×2 Output voltage: VOUT (1V/div) Output voltage: VOUT (1V/div) EN input voltage: VEN:L→H EN input voltage: VEN:L→H 200 μs/div 4 ms/div Load Response Characteristics Load Response Characteristics VIN = 12V , VOUT = 3.3 V , Ta = 25°C L = 10 μH , COUT = 10 μF ×2 VIN = 12 V , VOUT = 1.2 V , Ta = 25°C L = 10 μH , COUT = 10 μF ×2 Output voltage: VOUT (200 mV/div) Output voltage: VOUT (100 mV/div) Output current: IOUT : (1A→2A→1A) Output current: IOUT : (10mA→2A→10mA) 200 μs/div 200 μs/div 13 2013-11-01 TB7107FN Package Dimensions Weight: 0.017 g (typ.) 14 2013-11-01 TB7107FN RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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