TBAW56,LM

TBAS16,TBAW56,TBAV70 TOSHIBA Switching Diodes Silicon Epitaxial TBAS16,TBAW56,TBAV70 Silicon Switching diodes Pb-free (RoHS compliant) package Abusolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Peak reverse Voltage VRM 85 V Reverse voltage VR 80 V Average forward current (Note1) IO 215 mA Peak forward current (Note1) IFM 500 mA IFSM 2 A Power dissipation (Note 3) PD 320 mW Junction temperature Tj 150 C Tstg −55 to 150 C Non-repetitive peak forward surge current (Note1,Note2) Storage temperature range SOT23 Weight : 0.009g (typ.) Note1 : Unit rating. Total rating = Unit rating x 1.5 (TBAW56,TBAV70) Note2 : Measured with a 10ms pulse. 2 Note3 : Mounted on an FR4 board (25.4 mm  25.4 mm  1.6 mm, Cu Pad: 0.42 mm x 3) Note:Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/ “Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). List of Products Number and Marking, Configuration Marking on the Product Example : TBAS16 Products No. Marking Configuration TBAS16 F3 single TBAW56 A3 common anode TBAV70 B3 common cathode 3 F3 Equivalent Circuit (top view) 2 TBAS16 1 2 3 3 3 1 1 1 2 2 TBAV70 TBAW56 1 X34TTD-xxx-0x 2016-03-29 TBAS16,TBAW56,TBAV70 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Symbol Test Condition Min Typ. Max Unit VF (1) IF = 1mA ― ― 715 VF (2) IF = 10mA ― ― 855 VF (3) IF = 50mA ― ― 1000 VF (4) IF = 150mA ― ― 1250 IR(1) VR = 25V ― ― 30 nA IR(2) VR = 80V ― ― 0.5 μA IR(3) VR = 25V, Tj = 150C ― ― 30 μA IR(4) VR = 80V, Tj = 150C ― ― 100 μA mV Total capacitance CT VR = 1 V, f = 1MHz ― 0.9 ― pF Reverse recovery time trr IF = 10mA, Fig.1 ― 1.6 4.0 ns 2 X34TTD-xxx-0x 2016-03-29 TBAS16,TBAW56,TBAV70 100 Ta = 125℃ Ta = 150℃ 100 REVERSE CURRENT IR (μA) FORWARD CURRENT IF (mA) 1000 85℃ 25℃ 10 -40℃ 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE VF (V) 10 1 100-1 100-2 25℃ 100-3 100-4 100-5 1.4 85℃ Fig IF - VF -40℃ 0 20 40 60 80 REVERSE VOLTAGE VR (V) 100 Fig IR - VR Note: The above characteristics curves are presented for reference only and not guaranteed by production test,unless otherwise noted. 3 X34TTD-xxx-0x 2016-03-29 TBAS16,TBAW56,TBAV70 Package Dimensions Unit: mm SOT23 Weight: 0.009g (typ.) 4 X34TTD-xxx-0x 2016-03-29 TBAS16,TBAW56,TBAV70 RESTRICTIONS ON PRODUCT USE  Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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