TBC847B,LM

TBC847 Bipolar Transistors Silicon NPN Epitaxial Type TBC847 1. Applications • Low-Frequency Amplifiers 2. Packaging and Internal Circuit 1. Base 2. Emitter 3. Collector SOT23 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current (DC) IC 150 mA Collector current (pulsed) ICP 200 Base current IB 30 mA Collector power dissipation PC 320 mW Junction temperature (Note 1) Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 × 3) Start of commercial production ©2016 Toshiba Corporation 1 2016-05 2016-08-01 Rev.1.0 TBC847 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 mA   30 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 mA   0.1 µA DC current gain hFE  (Note 1) VCE = 5 V, IC = 10 µA  280  200 290 450 IC = 10 mA, IB = 0.5 mA  0.06 0.2 IC = 100 mA, IB = 5 mA  0.17 0.4 IC = 10 mA, IB = 0.5 mA  0.7  IC = 100 mA, IB = 5 mA  0.9  IC = 2 mA, VCE = 5 V 0.58 0.66 0.7 IC = 10 mA, VCE = 5 V   0.77 VCE = 5 V, IC = 10 mA, f = 100 MHz 100   MHz VCE = 5 V, IC = 2 mA Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage Transition frequency VBE fT V V V Collector output capacitance Cob VCB = 10 V, IE = 0 mA, f = 1 MHz   3.5 pF Emitter input capacitance Cib VEB = 0.5 V, IC = 0 mA, f = 1 MHz  11  pF Noise figure NF VCE = 6 V, IC = 100 µA, f = 1 kHz, RG = 10 kΩ  1.0 10 dB Note 1: hFE classification: B rank 5. Marking ©2016 Toshiba Corporation 2 2016-08-01 Rev.1.0 TBC847 6. Characteristics Curves (Note) Fig. 6.1 hFE - IC Fig. 6.2 VBE - IC Fig. 6.3 VCE(sat) - IC Fig. 6.4 VBE(sat) - IC Fig. 6.5 PC - Ta Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016 Toshiba Corporation 3 2016-08-01 Rev.1.0 TBC847 Package Dimensions Unit: mm Weight: 0.009 g (typ.) Package Name(s) TOSHIBA: 2-3AB1A Nickname: SOT23 ©2016 Toshiba Corporation 4 2016-08-01 Rev.1.0 TBC847 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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