TBD62083AFWG(Z,EHZ

TBD62083A series, TBD62084A series TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62083APG, TBD62083AFG, TBD62083AFNG, TBD62083AFWG TBD62084APG, TBD62084AFG, TBD62084AFNG, TBD62084AFWG 8channel sink type DMOS transistor array TB62083A series and TB62084A series are DMOS transistor TBD62083APG, TBD62084APG array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. Features • • • 8 circuits built-in High voltage High current • Input voltage(output on) • Input voltage(output off) • Package P-DIP18-300-2.54-001 : VOUT = 50 V (MAX) : IOUT = 500 mA/ch (MAX) TBD62083AFG, TBD62084AFG : TBD62083A series 2.5 V (MIN) TBD62084A series 7.0 V (MIN) : TBD62083A series 0.6 V (MAX) TBD62084A series 1.0 V (MAX) : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 SOP18-P-375-1.27 TBD62083AFNG, TBD62084AFNG Pin connection (top view) SSOP18-P-225-0.65 TBD62083AFWG, TBD62084AFWG Pin connection may be simplified for explanatory purpose. P-SOP18-0812-1.27-001 Weight P-DIP18-300-2.54-001 : 1.3 g (Typ.) SOP18-P-375-1.27 : 0.41 g (Typ.) SSOP18-P-225-0.65 : 0.09 g (Typ.) P-SOP18-0812-1.27-001 : 0.48 g (Typ.) ©2016 Toshiba Corporation 1 2016-05-11 TBD62083A series, TBD62084A series Pin explanations Pin No. Pin name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 I1 I2 I3 I4 I5 I6 I7 I8 GND COMMON O8 O7 O6 O5 O4 O3 O2 O1 Input pin Input pin Input pin Input pin Input pin Input pin Input pin Input pin GND pin Common pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Equivalent circuit (each driver) COMMON Clamp diode OUTPUT INPUT Clamp Equivalent circuit may be simplified for explanatory purpose. ©2016 Toshiba Corporation 2 2016-05-11 TBD62083A series, TBD62084A series Absolute Maximum Ratings (Ta = 25 °C) Characteristics Symbol Rating Unit Output voltage COMMON pin voltage VOUT VCOM 50 −0.5 to 50 V V Output current Input voltage IOUT VIN 500 −0.5 to 30 mA/ch V Clamp diode reverse voltage Clamp diode forward current VR IF 50 500 V mA Power dissipation PG (Note1) FG (Note2) FNG (Note3) FWG (Note4) Operating temperature Storage temperature 1.47 0.96 PD 0.96 1.31 −40 to 85 −55 to 150 Topr Tstg W °C °C Note1: Device alone. When Ta exceeds 25 °C, it is necessary to do the derating with 11.8 mW/°C. Note2: Device alone. When Ta exceeds 25 °C, it is necessary to do the derating with 7.7 mW/°C. Note3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40 %, single-side glass epoxy). When Ta exceeds 25 °C, it is necessary to do the derating with 7.7 mW/°C. Note4: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20 %, single-side glass epoxy). When Ta exceeds 25 °C, it is necessary to do the derating with 10.48 mW/°C. ©2016 Toshiba Corporation 3 2016-05-11 TBD62083A series, TBD62084A series Operating Ranges (Ta = −40 to 85 °C) Characteristics Symbol Condition Min Typ. Max Unit Output voltage VOUT ― ― ― V COMMON pin voltage VCOM ― 0 ― 50 50 1 circuits ON, Ta = 25°C 0 ― 400 Duty = 10% 0 ― 390 Duty = 50% 0 ― 170 0 ― 400 Duty = 10% 0 ― 320 Duty = 50% 0 ― 140 0 ― 400 Duty = 10% 0 ― 320 Duty = 50% 0 ― 140 0 ― 400 Duty = 10% 0 ― 370 Duty = 50% 0 ― 160 IOUT = 100 mA or upper, VOUT = 2 V 2.5 ― 25 IOUT = 100 mA or upper, VOUT = 2 V 7.0 ― 25 IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 (OFF) IOUT = 100 μA or less, VOUT = 2 V 0 ― 1.0 IF ― ― ― 400 tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C PG (Note1) 1 circuits ON, Ta = 25°C FG (Note1) Output current IOUT tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C 1 circuits ON, Ta = 25°C tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C FNG (Note2) 1 circuits ON, Ta = 25°C tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C FWG (Note3) TBD62083A Input series voltage TBD62084A (Output on) series TBD62083A Input series voltage TBD62084A (Output off) series Clamp diode forward current VIN (ON) VIN V mA/ch V V mA Note1: Device alone. Note2: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy). Note3: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy). ©2016 Toshiba Corporation 4 2016-05-11 TBD62083A series, TBD62084A series Electrical Characteristics (Ta = 25°C unless otherwise noted) Characteristics Symbol Test Circuit Output leakage current Ileak 1 TBD62083A series Output voltage (Output ON-resistan ce) VDS (RON) TBD62083A Input series IIN (ON) current (Output on) TBD62084A series 3 IIN (OFF) 4 TBD62083A Input series VIN (ON) voltage (Output on) TBD62084A series Clamp diode IR reverse current Clamp diode VF forward voltage Turn−on delay tON Turn−off delay ©2016 Toshiba Corporation tOFF Min Typ. Max Unit VOUT = 50V, Ta = 85°C VIN = 0 V ― ― 1.0 μA IOUT = 350 mA, VIN =5.0V ― 0.7 (2.0) 1.14 (3.25) IOUT = 200 mA, VIN =5.0V ― 0.4 (2.0) 0.65 (3.25) IOUT = 100 mA, VIN =5.0V ― 0.2 (2.0) 0.325 (3.25) IOUT = 350 mA, VIN =7.0V ― 0.7 (2.0) 1.14 (3.25) IOUT = 200 mA, VIN =7.0V ― 0.4 (2.0) 0.65 (3.25) IOUT = 100 mA, VIN =7.0V ― 0.2 (2.0) 0.325 (3.25) VIN = 2.5 V ― ― 0.1 2 TBD62084A series Input current(Output off) Condition 5 V (Ω) mA VIN = 7.0 V ― ― 0.5 VIN = 0 V, Ta = 85°C ― ― 1.0 ― ― 2.5 IOUT = 100 mA, VOUT = 2 V μA V ― ― 7.0 6 VR = 50 V, Ta = 85°C ― ― 1.0 μA 7 IF = 350 mA ― ― 2.0 V 8 VOUT = 50 V RL = 125 Ω CL = 15 pF ― 0.4 ― ― 0.8 ― 5 μs 2016-05-11 TBD62083A series, TBD62084A series Test circuit 1. Ileak 2. VDS (RON) COMMON COMMON OUTPUT INPUT OUTPUT INPUT Ileak VOUT IOUT VDS VIN GND GND RON = VDS / IOUT 3. IIN (ON) 4. IIN (OFF) COMMON COMMON OUTPUT INPUT IIN(ON) VIN OUTPUT INPUT IIN(OFF) GND GND 5. VIN (ON) 6. IR COMMON COMMON IR OUTPUT INPUT IOUT VOUT VIN(ON) VR INPUT OUTPUT GND GND 7. VF COMMON IF VF INPUT OUTPUT GND Test circuit may be simplified for explanatory purpose. ©2016 Toshiba Corporation 6 2016-05-11 TBD62083A series, TBD62084A series 8. tON, tOFF (Note 1) (Note 2) Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Please refer to the following table for the VIH condition. Product TBD62083A series TBD62084A series VIH 5.0 V 7.0 V Note 2: CL includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. ©2016 Toshiba Corporation 7 2016-05-11 TBD62083A series, TBD62084A series Package Dimensions P-DIP18-300-2.54-001 Unit: mm Weight: 1.3 g (Typ.) SOP18-P-375-1.27 Unit: mm Weight: 0.41 g (Typ.) ©2016 Toshiba Corporation 8 2016-05-11 TBD62083A series, TBD62084A series SSOP18-P-225-0.65 Unit: mm Weight: 0.09 g (Typ.) P-SOP18-0812-1.27-001 Unit: mm Weight: 0.48 g (Typ.) ©2016 Toshiba Corporation 9 2016-05-11 TBD62083A series, TBD62084A series Notes on Contents 1. Pin connection Pin connection may be simplified for explanatory purpose. 2. Equivalent Circuits Equivalent circuit may be simplified for explanatory purpose. 3. Test circuit Test circuit may be simplified for explanatory purpose. 4. Timing chart Timing charts may be simplified for explanatory purposes. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction,stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond theabsolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. ©2016 Toshiba Corporation 10 2016-05-11 TBD62083A series, TBD62084A series RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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