TBD62503AFG,EL

TBD62502A series, TBD62503A series TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62502APG, TBD62502AFG, TBD62502AFNG, TBD62502AFWG TBD62503APG, TBD62503AFG, TBD62503AFNG, TBD62503AFWG 7channel sink type DMOS transistor array TBD62502APG,TBD62503APG TBD62502A series and TBD62503A series are DMOS transistor array with 7 circuits. Please be careful about thermal conditions during use. Features • • • • 7 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 300 mA/ch (MAX) Input voltage(output on) : TBD62502A series 14 V (MIN) TBD62503A series 2.5 V (MIN) • Input voltage(output off) : TBD62502A series 7.0 V (MAX) TBD62503A series 0.6 V (MAX) • Package : PG type DIP16-P-300-2.54A FG type SOP16-P-225-1.27 FNG type SSOP16-P-225-0.65B FWG type P-SOP16-0410-1.27-002 DIP16-P-300-2.54A TBD62502AFG,TBD62503AFG SOP16-P-225-1.27 TBD62502AFNG,TBD62503AFNG Pin connection (top view) O1 O2 O3 O4 O5 O6 O7 NC 16 15 14 13 12 11 10 9 1 I1 2 I2 3 I3 4 I4 5 I5 6 I6 7 8 I7 GND SSOP16-P-225-0.65B TBD62502AFWG,TBD62503AFWG Pin connection may be simplified for explanatory purpose. P-SOP16-0410-1.27-002 Weight DIP16-P-300-2.54A : 1.11g (Typ.) SOP16-P-225-1.27 : 0.16g (Typ.) SSOP16-P-225-0.65B : 0.07g (Typ.) P-SOP16-0410-1.27-002 : 0.15g (Typ.) ©2015 Toshiba Corporation 1 2015-07-24 TBD62502A series, TBD62503A series Pin explanations Pin No. Pin name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 I1 I2 I3 I4 I5 I6 I7 GND NC O7 O6 O5 O4 O3 O2 O1 Input pin Input pin Input pin Input pin Input pin Input pin Input pin GND pin Non-connection pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Equivalent circuit (each driver) OUTPUT INPUT Clamp Equivalent circuit may be simplified for explanatory purpose. ©2015 Toshiba Corporation 2 2015-07-24 TBD62502A series, TBD62503A series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Output voltage Output current Input voltage PG (Note 1) FG (Note 2) Power dissipation FNG (Note 3) FWG (Note 4) Operating temperature Storage temperature VOUT IOUT VIN 50 300 −0.5 to 30 1.47 0.625 0.78 1.25 −40 to 85 −55 to 150 V mA/ch V PD Topr Tstg W °C °C Note 1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C. Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area: 50%, single-side glass epoxy). When Ta exceeds 25°C, it is necessary to do the derating with 5 mW/°C. Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy). When Ta exceeds 25°C, it is necessary to do the derating with 6.24 mW/°C. Note 4: On PCB (JEDEC 2s2p). When Ta exceeds 25°C, it is necessary to do the derating with 10 mW/°C. ©2015 Toshiba Corporation 3 2015-07-24 TBD62502A series, TBD62503A series Operating Ranges (Ta = −40 to 85 °C) Characteristics Symbol Condition Output voltage VOUT ― 1 circuits ON, Ta = 25 °C Duty = 10 % tpw = 25 ms 7 circuits ON Ta = 85 °C Duty = 50 % Tj = 120 °C ― 0 0 ― ― ― 50 250 250 0 ― 190 1 circuits ON, Ta = 25 °C 0 ― 250 Duty = 10 % 0 ― 250 Duty = 50 % 0 ― 120 0 ― 250 Duty = 10 % 0 ― 250 Duty = 50 % 0 ― 130 0 ― 250 Duty = 10 % 0 ― 250 Duty = 50 % 0 ― 170 14 ― 25 IOUT = 100 mA or upper, VOUT = 2 V 2.5 ― 25 PG(Note 1) tpw = 25 ms 7 circuits ON Ta = 85 °C Tj = 120 °C FG(Note 2) Output current IOUT 1 circuits ON, Ta = 25 °C tpw = 25 ms 7 circuits ON Ta = 85 °C Tj = 120 °C FNG(Note 3) 1 circuits ON, Ta = 25 °C tpw = 25 ms 7 circuits ON Ta = 85 °C Tj = 120 °C FWG(Note 4) Input voltage (Output on) Input voltage (Output off) TBD62502A series TBD62503A series TBD62502A series TBD62503A series VIN (ON) VIN (OFF) IOUT = 100 mA or upper, VOUT = 2 V Min Typ. Max Unit V mA/ch V IOUT = 100 μA or less, VOUT = 2 V 0 ― 7.0 IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V Note 1: Device alone. Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area: 50%, single-side glass epoxy). Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy). Note 4: On PCB (JEDEC 2s2p). ©2015 Toshiba Corporation 4 2015-07-24 TBD62502A series, TBD62503A series Electrical Characteristics (Ta = 25 °C unless otherwise noted) Characteristics Symbol Test Circuit Output leakage current Ileak 1 Condition Min Typ. Max Unit VOUT = 50V, Ta = 85 °C VIN = 0 V ― ― 1.0 μA IOUT = 200 mA, VIN =14 V ― 0.4 (2.0) 0.65 (3.25) IOUT = 100 mA, VIN =14 V ― 0.2 (2.0) 0.325 (3.25) IOUT = 200 mA, VIN =5.0 V ― 0.4 (2.0) 0.65 (3.25) IOUT = 100 mA, VIN =5.0 V ― 0.2 (2.0) 0.325 (3.25) VIN = 14 V ― ― 1.0 VIN = 2.5 V ― ― 0.1 ― ― 1.0 ― ― 14 ― ― 2.5 ― 0.4 ― ― 0.8 ― TBD62502A series Output voltage (Output ON-resistance) VDS (RON) 2 TBD62503A series Input current (Output on) TBD62502A series TBD62503A series Input current(Output off) Input voltage (Output on) TBD62502A series TBD62503A series Turn−on delay Turn−off delay ©2015 Toshiba Corporation IIN (ON) 3 IIN (OFF) 4 VIN = 0 V, Ta = 85°C VIN 5 IOUT = 100 mA, VOUT = 2 V (ON) tON tOFF 6 VOUT = 50 V RL = 200 Ω CL = 15 pF 5 V (Ω) mA μA V μs 2015-07-24 TBD62502A series, TBD62503A series Test circuit 1. Ileak 2. VDS (RON) OUTPUT INPUT OUTPUT INPUT Ileak VOUT IOUT VDS VIN GND GND RON = VDS / IOUT 3. IIN (ON) 4. IIN (OFF) OUTPUT INPUT IIN(ON) OUTPUT INPUT IIN(OFF) VIN GND GND 5. VIN (ON) OUTPUT INPUT IOUT VIN(ON) VOUT GND Test circuit may be simplified for explanatory purpose. ©2015 Toshiba Corporation 6 2015-07-24 TBD62502A series, TBD62503A series 6. tON, tOFF (注 1) 1) (Note (注 2) 2) (Note Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Please refer to the following table for the VIH condition. Product VIH TBD62502A series 14.0 V 5.0 V TBD62503A series Note 2: CL includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. ©2015 Toshiba Corporation 7 2015-07-24 TBD62502A series, TBD62503A series Package Dimensions DIP16-P-300-2.54A Unit: mm Weight: 1.11 g (Typ.) SOP16-P-225-1.27 Unit: mm Weight: 0.16 g (Typ.) ©2015 Toshiba Corporation 8 2015-07-24 TBD62502A series, TBD62503A series SSOP16-P-225-0.65B Unit: mm Weight: 0.07 g (Typ.) P-SOP16-0410-1.27-002 Unit: mm Weight: 0.15 g (Typ.) ©2015 Toshiba Corporation 9 2015-07-24 TBD62502A series, TBD62503A series Notes on Contents 1. Pin connection Pin connection may be simplified for explanatory purpose. 2. Equivalent Circuits Equivalent circuit may be simplified for explanatory purpose. 3. Test circuit Test circuit may be simplified for explanatory purpose. 4. Timing chart Timing charts may be simplified for explanatory purposes. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. ©2015 Toshiba Corporation 10 2015-07-24 TBD62502A series, TBD62503A series RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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