TBD62786APG

TBD62786APG/FNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62786APG, TBD62786AFNG, TBD62786AFWG 8-ch low active source type DMOS transistor array TBD62786A series are DMOS transistor arrays with 8 circuits. Each output has an internal clamp diode that clamps the back electromotive force generated in driving inductive loads. Please be careful about thermal conditions during use. TBD62786APG Features • • • 8 circuits built-in High output voltage Large output current • • • Input voltage (output on) Input voltage (output off) Package : VOUT = 50 V (max) : IOUT = -500 mA (max, per 1 ch) : -30 to -2.8 V : -1.2 to 0 V : PG type P-DIP18-300-2.54-001 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 P-DIP18-300-2.54-001 TBD62786AFNG TBD62786AFWG Pin connection (top view) O1 O2 O3 O4 O5 O6 O7 O8 GND P-SOP18-0812-1.27-001 I1 I2 I3 I4 I5 I6 I7 I8 Weight P-DIP18-300-2.54-001 : 1.3 g (typ.) SSOP18-P-225-0.65 : 0.09 g (typ.) P-SOP18-0812-1.27-001 : 0.48 g (typ.) VCC Pin Connection may be omitted partially or simplified for explanatory purposes. © 2017 Toshiba Electronic Devices & Storage Corporation 1 2017-07-05 TBD62786APG/FNG/FWG Pin description Pin No. Pin name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 I1 I2 I3 I4 I5 I6 I7 I8 VCC GND O8 O7 O6 O5 O4 O3 O2 O1 Input pin Input pin Input pin Input pin Input pin Input pin Input pin Input pin Power supply pin GND pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Basic circuit VCC Clamp circuit INPUT OUTPUT Clamp diode Basic circuit may be omitted partially or simplified for explanatory purpose. 2 2017-07-05 TBD62786APG/FNG/FWG Absolute maximum ratings (Ta = 25°C, VCC = 0 V) Characteristics Symbol Rating Unit Power supply voltage VCC-VGND 50 V Output voltage VOUT -50 to 0.5 V IOUT -500 mA Input voltage VIN −30 to 0.5 V Clamp diode reverse voltage VR 50 V Clamp diode forward current IF 500 mA Output current (per 1 ch) 1.47 PG (Note 1) Power dissipation FNG (Note 2) 0.96 PD FWG (Note 3) W 1.31 Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 150 °C Note 1: Stand alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C. Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy) When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C. Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy) When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C. Operating ranges (Ta = −40 to 85°C and VCC = 0 V, unless otherwise specified) Characteristics Symbol Condition Min Typ. Max Unit Power supply voltage VCC-VGND IOUT = -100 mA 2.0 ― 50 V Output voltage VOUT ― -50 ― 0 V One circuit ON, Ta = 25 °C 0 ― -400 Duty = 10 % 0 ― -390 Duty = 50 % 0 ― -170 0 ― -400 Duty = 10 % 0 ― -320 Duty = 50 % 0 ― -140 0 ― -400 Duty = 10 % 0 ― -370 Duty = 50 % 0 ― -160 tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C PG (Note 1) One circuit ON, Ta = 25 °C Output current (per 1 ch) FNG (Note 2) IOUT tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C One circuit ON, Ta = 25 °C tpw = 25 ms 8 circuits ON Ta = 85°C Tj = 120°C FWG (Note 3) mA Input voltage (Output on) VIN (ON) IOUT = -100 mA or more, VDS = 2.0 V -30 ― -2.8 V Input voltage (Output off) VIN (OFF) IOUT = -100 μA or less, VDS = 2.0 V -1.2 ― 0 V Clamp diode forward current IF ― ― ― 400 mA Note 1: Stand alone Note 2: On PCB (size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy) Note 3: On PCB (size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy) 3 2017-07-05 TBD62786APG/FNG/FWG Electrical characteristics (Ta = 25°C and VCC = 0 V, unless otherwise specified) Characteristics Symbol Test circuit Output leakage current Ileak 1 Output voltage VDS (Output ON-resistance) (RON) 2 Condition Min Typ. Max Unit VIN = 0 V, VOUT = VGND = -50 V Ta = 85 °C ― ― 1.0 μA IOUT = -350 mA, VIN = -2.8 V, VGND = -5.0 V ― 0.56 (1.6) 1.14 (3.25) IOUT = -200 mA, VIN = -2.8 V, VGND = -5.0 V ― 0.32 (1.6) 0.65 (3.25) IOUT = -100 mA, VIN = -2.8 V, VGND = -5.0 V ― 0.16 (1.6) 0.325 (3.25) V (Ω) IIN(ON) 3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― -30 μA IIN(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ― ― 1 μA Current consumption ICC(ON) 3 VIN = -2.8 V, VGND = -50 V, Output OPEN ― ― 5 mA (per 1 ch) ICC(OFF) 4 VIN = 0 V, VGND = -50 V, Output OPEN ― ― 1 μA Clamp diode leakage current IR 5 VR = 50 V, Ta = 85 °C ― ― 1 μA Clamp diode forward voltage VF 6 IF = 350 mA ― ― 2.0 V Turn-on delay tON 0.2 ― Turn-off delay tOFF VOUT = VGND = -50 V RL = 160 Ω CL = 15 pF ― 7 ― 2.0 ― Input current 4 μs 2017-07-05 TBD62786APG/FNG/FWG Test circuit 1. Ileak 2. VDS (RON) VCC VIN VCC VOUT INPUT VIN OUTPUT Ileak VGND INPUT OUTPUT IOUT VGND GND GND 3. IIN(ON), ICC(ON) RON = VDS / IOUT 4. IIN(OFF), ICC(OFF) ICC(ON) ICC(OFF) VCC VIN VDS VOUT VCC INPUT VIN OUTPUT IlN(ON) VGND INPUT OUTPUT IlN(OFF) VGND GND GND 5. IR 6. VF VCC VCC VR INPUT INPUT OUTPUT OUTPUT IR IF GND GND VF Test circuits may be omitted partially or simplified for explanatory purpose. 5 2017-07-05 TBD62786APG/FNG/FWG 7. tON, tOFF VCC Input Pulse generator Output (Note (注 1) 1) VGND GND VOUT RL CL (Note (注 2) 2) 0V Input tON Output 50% 50% -5.0 50 μs tOFF 50% VOH 50% VOL Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: CL includes capacitance of the probe and the test board. Test circuit and timing charts may be omitted partially or simplified for explanatory purpose. Precautions for Using This IC does not incorporate protection circuits for over current and over voltage. Therefore, if the short-circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage beyond the absolute maximum rating is impressed, and IC may be destroyed. When designing, please consider enough in power supply line, output line, and GND line. In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the appropriate fuse in the power supply line. 6 2017-07-05 TBD62786APG/FNG/FWG Package dimensions P-DIP18-300-2.54-001 Unit: mm Weight: 1.3 g (typ.) SSOP18-P-225-0.65 Unit: mm Weight: 0.09 g (typ.) 7 2017-07-05 TBD62786APG/FNG/FWG P-SOP18-0812-1.27-001 Unit: mm Weight: 0.48 g (typ.) 8 2017-07-05 TBD62786APG/FNG/FWG Notes on Contents 1. Pin Connection Pin connection may be simplified for explanatory purpose. 2. Basic Circuit Basic circuit may be simplified for explanatory purpose. 3. Timing Chart Timing charts may be simplified for explanatory purposes. 4. Test circuit Test circuit may be simplified for explanatory purpose. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (Tj) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 9 2017-07-05 TBD62786APG/FNG/FWG RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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