TC4511BF

TC4511BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4511BP,TC4511BF TC4511B BCD-to-Seven Segment Latch/Decoder/Driver TC4511B is decoder which converts the input of BCD code into the 7 segment display element driving signal and the output has complementary connection of NPN bipolar transistor and N-channel MOS FET. Therefore, not only capability of directly driving cathode common type LED, this has capability of driving various display elements with simple interface circuits. LT input and BI input are to force all the outputs to be “H” (illuminated) and “L” (not illuminated) respectively regardless of BCD input. As the latch controlled by common LE input is inserted in each of four input lines, static display of dynamic information can be achieved. When an invalid BCD input, “10” or higher is applied, all the outputs become “L” (not illuminated). TC4511BP TC4511BF Pin Assignment Weight DIP16-P-300-2.54A SOP16-P-300-1.27A : 1.00 g (typ.) : 0.18 g (typ.) Display 1 2007-10-01 TC4511BP/BF Truth Table Inputs LE * * Outputs BI * LT L H H H H H H H H H H H H H H H D * * C * * B * * A * * a H L H L H H L H L H H H L L L b H L H H H H H L L H H H L L L c H L H H L H H H H H H H L L L d H L H L H H L H H L H L L L L ΔΔ e H L H L H L L L H L H L L L L f H L H L L L H H H L H H L L L g H L L L H H H H H L H H L L L Display Mode 8 Blank 0 1 2 3 4 5 6 7 8 9 Blank Blank Blank L H H H H H H H H H H H H H H L L L L L L L L L L L L L H L L L L L L L L H H H H H * L L L L H H H H L L L L H * L L H H L L H H L L H H * * L H L H L H L H L H L H * * *: Don’t care ΔΔ: Depends upon the BCD code previously applied when LE “L” 2 2007-10-01 TC4511BP/BF Logic Diagram 3 2007-10-01 TC4511BP/BF Absolute Maximum Ratings (Note) Characteristics DC supply voltage Input voltage Output voltage DC input current Output high current Power dissipation Operating temperature range Storage temperature range Symbol VDD VIN VOUT IIN IOH PD Topr Tstg Rating VSS − 0.5~VSS + 20 VSS − 0.5~VDD + 0.5 VSS − 0.5~VDD + 0.5 ±10 −50 Unit V V V mA mA mW °C °C 300 (DIP)/180 (SOIC) −40~85 −65~150 Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Range (VSS = 0 V) (Note) Characteristics DC supply voltage Input voltage Symbol VDD VIN Test Condition ⎯ ⎯ Min 3 0 Typ. ⎯ ⎯ Max 18 VDD Unit V V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VDD or VSS. 4 2007-10-01 TC4511BP/BF Static Electrical Characteristics (VSS = 0 V) Characteristics Symbol Test Condition VDD (V) ⎪IOUT⎪ < 1 μA −40°C 25°C Min 4.1 9.1 14.1 ⎯ ⎯ ⎯ 85°C Max ⎯ ⎯ ⎯ Min 4.1 9.1 14.1 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ Typ. 4.41 9.41 14.41 0.00 0.00 0.00 4.41 4.25 4.19 Min 4.2 9.2 14.2 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ Unit 5 10 15 5 10 15 High-level output voltage VOH VIN = VSS, VDD ⎪IOUT⎪ < 1 μA V 0.05 0.05 0.05 ⎯ ⎯ ⎯ 0.05 0.05 0.05 ⎯ ⎯ ⎯ 0.05 0.05 0.05 ⎯ ⎯ ⎯ Low-level output voltage VOL VIN = VSS, VDD IOH = 0 mA IOH = 10 mA IOH = 20 mA VIN = VDD, VSS IOH = 0 mA V 4.10 5 3.90 3.55 4.10 3.90 3.55 4.20 3.90 3.30 9.10 10 9.00 8.70 ⎯ ⎯ ⎯ 9.10 9.00 8.70 9.41 9.25 9.20 ⎯ ⎯ ⎯ 9.20 9.00 8.40 ⎯ ⎯ ⎯ Output high voltage VOH IOH = 10 mA IOH = 20 mA VIN = VDD, VSS IOH = 0 mA IOH = 10 mA IOH = 20 mA VIN = VDD, VSS VOUT = 0.4 V V 14.10 15 14.00 13.75 ⎯ ⎯ ⎯ 14.10 14.00 13.75 14.41 14.26 14.21 ⎯ ⎯ ⎯ 14.20 14.00 13.50 ⎯ ⎯ ⎯ 5 10 15 0.61 1.5 4.0 ⎯ ⎯ ⎯ 0.51 1.3 3.4 1.2 3.2 12.0 ⎯ ⎯ ⎯ 0.42 1.1 2.8 ⎯ ⎯ ⎯ Output low voltage IOL VOUT = 0.5 V VOUT = 1.5 V VIN = VDD, VSS VOUT = 0.5 V, 4.5 V mA 5 10 15 3.5 7.0 11.0 ⎯ ⎯ ⎯ 3.5 7.0 11.0 2.75 5.50 8.25 ⎯ ⎯ ⎯ 3.5 7.0 11.0 ⎯ ⎯ ⎯ Input high voltage VIH VOUT = 1.0 V, 9.0 V VOUT = 1.5 V, 13.5 V ⎪IOUT⎪ < 1 μA V VOUT = 0.5 V, 4.5 V Input low voltage VIL VOUT = 1.0 V, 9.0 V VOUT = 1.5 V, 13.5 V ⎪IOUT⎪ < 1 μA 5 10 15 ⎯ ⎯ ⎯ 1.5 3.0 4.0 ⎯ ⎯ ⎯ 2.25 4.5 6.75 1.5 3.0 4.0 ⎯ ⎯ ⎯ 1.5 3.0 4.0 V Input current “H” level “L” level IIH IIL VIH = 18 V VIL = 0 V VIN = VSS, VDD (Note) 18 18 5 10 15 ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 −0.1 ⎯ ⎯ ⎯ ⎯ ⎯ 10− −10 5 0.1 −0.1 ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 −1.0 −5 μA 5 10 20 0.005 0.010 0.015 5 10 20 150 300 600 μA Quiescent supply current IDD Note: All valid input combinations. 5 2007-10-01 TC4511BP/BF Dynamic Electrical Characteristics (Ta = 25°C, VSS = 0 V, CL = 50 pF, RL = 10 kΩ) Characteristics Symbol Test Condition VDD (V) 5 tTLH ⎯ Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 25 15 15 70 35 30 200 90 65 230 110 80 75 45 35 90 50 45 60 40 35 75 45 35 180 90 65 230 110 85 40 20 15 35 15 10 ⎯ ⎯ ⎯ Max 80 60 50 200 100 80 1040 420 300 1040 420 300 640 260 200 640 260 200 300 150 100 300 150 100 600 300 250 600 300 250 300 150 120 150 70 40 0 0 0 7.5 Unit Output transition time (low to high) 10 15 5 ns Output transition time (high to low) tTHL ⎯ 10 15 5 ns Propagation delay time (DATA-OUT) tpLH ⎯ 10 15 5 ns Propagation delay time (DATA-OUT) tpHL ⎯ 10 15 5 ns Propagation delay time ( BI -OUT) tpLH ⎯ 10 15 5 ns Propagation delay time ( BI -OUT) tpHL ⎯ 10 15 5 ns Propagation delay time ( LT -OUT) tpLH ⎯ 10 15 5 ns Propagation delay time ( LT -OUT) tpHL ⎯ 10 15 5 ns Propagation delay time (LE-OUT) tpLH ⎯ 10 15 5 ns Propagation delay time (LE-OUT) tpHL ⎯ 10 15 5 ns Min pulse time (LE) tWL ⎯ 10 15 5 ns Min set-up time (DATA-LE) tSU ⎯ 10 15 5 ns Min hold time (DATA-LE) Input capacitance tH ⎯ 10 15 ns CIN ⎯ 5 pF 6 2007-10-01 TC4511BP/BF Waveform for Measurement of Dynamic Characteristics Waveform 1 Waveform 2 Waveform 3 Waveform 4 7 2007-10-01 TC4511BP/BF Package Dimensions Weight: 1.00 g (typ.) 8 2007-10-01 TC4511BP/BF Package Dimensions Weight: 0.18 g (typ.) 9 2007-10-01 TC4511BP/BF RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-10-01