TC62D902FG
TOSHIBA CDMOS Integrated Circuit Silicon Monolithic
TC62D902FG
Offline Isolated flyback LED Controller with PFC
TC62D902FG
1. Feature
This product is isolated fly back LED controller IC with the
power factor correction function.
A LED current that flows to the secondary-side of
transformer is controlled by feedback primary-side of
transformer. Therefore, the Photo coupler is not used.
External parts can be decreased compared with a past
isolated fly back system.
Moreover, PFC function of one converter type is built into,
and the power factor improvement is possible by few
parts.
P-SOP8-0504-1.27-001
Weight: 0.07g (Typ.)
2. Use of recommend
LED lighting
3. Characteristics
•
•
•
•
•
•
Isolated PFC LED driver with minimum number of external parts
TRIAC Dimmable
1 converter type PFC (PFC >0.9)
Opto-isolator not need (Few parts and High Reliability)
Valley switch operation (Efficiency improvement &EMI reduction)
Detection function
Under voltage lockout (UVLO)
VIN over voltage detection (VIN-OVD)
Sense resistor short detection (SRSD)
Sense line open detection (IOD)
Over temperature detection (OTD)
Output open circuit detection (OOD)
Output short circuit detection (OSD)
Over current detection (OCD)
• Package : P-SOP8-0504-1.27-001
Rev 1.05
1
2012, Dec 01
TC62D902FG
4. Block Diagram
5. Pin Assignment (top view)
Rev 1.05
1
OREF
VCC
8
2
VSEN GATE
7
3
VIN
ISEN
6
4
BLDR
GND
5
2
2012, Dec 01
TC62D902FG
6. Pin Functions
Pin
No
1
Pin
Name
OREF
2
VSEN
I
3
VIN
I
4
5
BLDR
GND
O
P
6
ISEN
I
7
8
GATE
VCC
O
PI
I/O
Function
I
Capacitor connection terminal for internal oscillator
Auxiliary voltage sense terminal.
The LED current is controlled based on the detection result with this terminal.
PFC and TRIAC dimming operates based on the detection result with this
terminal.
Output terminal for control of external bleeder MOSFET.
Grand terminal.
Primary current sense terminal.
The LED current is controlled based on the detection result with this terminal.
Output terminal for control of external power MOSFET.
Power supply input terminal.
I: input terminal, O: output terminal, P: power supply and ground
7. Absolute Maximum Ratings (Ta = 25°C)
Characteristics
S u p p l y
v o l t a g e
Symbol
Rating Note1
Unit
VCC
−0.3~ 40
V
OREF
terminal
voltage
VOREF
−0.3~ 6.0
V
VSEN
terminal
voltage
VVSEN
−0.7~ 6.0
V
v o l t a g e
VVIN
−0.3~ 6.0
V
V I N
t e r m i n a l
BLDR
terminal
voltage
VBLDR
−0.3~ VCC
V
I SEN
termi nal
voltage
VISEN
−0.3~ 6.0
V
terminal
voltage
VGATE
−0.3~VCC
V
temperature
Topr
−40~85
°C
t e m p e r a t u r e
Tstg
−55~150
°C
Rth(j-a)
90 Note3
°C/ W
PD
1.38 Note3,4
W
GATE
Operating
S t o r a g e
T h e r m a l
P o w e r
r e s i s t a n c e
d i s s i p a t i o n
Note1: Voltage is ground referenced.
Note2: PCB condition is 76.2×114.3×1.6mm (JEDEC 4 layer substrate)
Note3: When ambient temperature is 25°C or more. Every time ambient temperature exceeded 1°C, please decrease 1/Rth(j-a).
Ta
Topr
Tj
: the ambient air temperature of IC.
: the ambient air temperature of IC under operation.
: It is the junction temperature of IC under operation.
Tj maximum is restricted by the TSD (thermal shutdown) circuit.
Tj maximum recommends carrying out a thermal design within the limit of a 120 degreeC
Cautions on absolute maximum ratings
The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment.
Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion.
The value of even one parameter of the absolute maximum ratings should not be exceeded under any circumstances. This
device does not have over-voltage protection. Therefore, the device is damaged if a voltage exceeding its rated maximum is
applied.
All voltage ratings including supply voltages must always be followed. The section on the protection features on the
latter page should also be referred to.
Rev 1.05
3
2012, Dec 01
TC62D902FG
8. Electrical Characteristics (Unless otherwise noted, Ta = -40~85 °C, VCC=15V)
Characteristics
Maximum operating voltage
S t a r t - u p
c u r r e n t
Operating supply current
Zener diode clamp voltage
UVLO release threshold voltage
UVLO operati on threshold vol tage
I n p u t
v o l t a g e
r a n g e
VIN-OVD threshold voltage
Conduction angle detection voltage
BLDR terminal off voltage
BLDR terminal source resistance
BLDR terminal sink resistance
O u t p u t
V o l t a g e
I n p u t l e a k a g e c u r r e n t
Valley detection voltage
O O P t h r e s h o l d v o l t a g e
O S P
t h r e s h o l d v o l t a g e
GATE terminal sauce resistance
GATE terminal sink resistance
G AT E t e r m i n a l r i s e t i m e
G A T E t e r m i n a l f a l l t i m e
Maximum operating frequency
O u t p u t
V o l t a g e
O C P t h r e s h o l d v o l t a g e
I O P
t h r e s h o l d
v o l t a g e
S R O P t h r e s h o l d v o l t a g e
B l a n k i n g
t i m e
OTP
operation
temperature
OTP
hysteresis
temperature
Rev 1.05
Symbol
VCC(MAX)
IINST
ICC
VZ
VUVLO(REL)
VUVLO(OPE)
Test
Circuit
Test Conditions
VIN = 10 V, CVCC = 10 µF
BLDR=OFF,GATE=OFF
TA = 25°C, IZ = 5 mA
VCC rising
VCC falling
VIN
VVIN-OVD
VANG_DET
VBLDR
RBLDRH
RBLDRL
VBLDR
IIN(Vsen)
VVMS
VOOP
VOSP
RGATEH
RGATEL
trGATE
tfGATE
fSW(MAX)
VBLDR
VOCP
VOCP
VSROP
tBLANK
TOTP
TOTP(HYS)
Min
Typ.
Max
Unit
10
1.7
25
15
2.5
29
11
6.5
12
7.5
13
8.5
V
µA
mA
V
V
V
0
1.85
0.10
2.10
0.14
1.8
2.35
0.18
V
V
V
0.34
V
Ω
Ω
0.22
0.28
300
300
Vcc
0.10
1.85
0.10
0.14
2.10
0.14
1
0.18
2.35
0.18
µA
V
V
V
200
30
50
50
30
Vcc
Ω
Ω
ns
ns
kHz
1.85
1.85
0.10
0.2
2.10
2.10
0.14
0.3
2.35
2.35
0.18
0.4
V
V
V
µs
Temperature rising
140
°C
Temperature falling
20
°C
IGATE=-5mA
IGATE=+5mA
VSENSE = 2 V
TA = 25°C
IGATE=-10mA
IGATE=+10mA
CL=330pF, 10%to90%,TA = 25°C
CL=330pF, 90%to10%,TA = 25°C
Ta=25°C
4
2012, Dec 01
TC62D902FG
9. Application Information
9-1Constant current control of LED current
IS
ILED
0.1µF
Duty control
circuit
VSEN
VVMS
Bridge
Diode
GATE
V G Q 1 IP
Constant current
regulation circuit
ISEN
R SEN
VPEAK
This waveform shows VAC’s
short time.
Note: This waveform shows VAC’s short time.
1: Q1 is turned on, and IP flows to the primary-side of transformer.
2: IP is detected by ISEN terminal when IP reaches IP(peak), and Q1 is turned off.
*IP(peak)= VPEAK/RSEN
3: IS(peak) is generated on the secondary-side of transformer.
*IS(peak)= IP(peak)×Ntr= VPEAK/RSEN×Ntr
*Ntr: Ratio of transformer winding on the primary-side and the secondary-side.
4: This current IS decreases as the energy charged in the transformer decreases. And, it
becomes 0mA.
When IS becomes 0mA, it is detected by VSEN terminal. As a result, TSON can be detected.
5: The frequency control circuit controls T so that TSON/T may become constant.
The LED current can be calculated by the following expressions.
IC keeps the LED current constant by controlling VPEAK and TSON/T.
ILED(Average of IS)=IS(peak)×1/2×TSON/T×2/π
= IP(peak)×Ntr×1/2×TSON/T×2/π
= VPEAK/RSEN×Ntr×1/2×TSON/T×2/π
Application Condition:
Rev 1.05
Tson/T = 4/7 (typ.), 1/T = 100kHz ( 30kHz ~ 200kHz)
5
2012, Dec 01
TC62D902FG
9-2 One converter PFC
This IC adjusts VPEAK according to AC shape of wave form detected with the VIN terminal.
As a result, IP near the sine wave is achieved and power factor will near 0.9
VIN
IP
ILED
IS
GATE
The output capacitance is necessary for LED to become smooth.
The On time of GATE waveform changes by the PFC with the upper figure.
Note)
There are image, and anytime’s different from the actual wave form.
Rev 1.05
6
2012, Dec 01
TC62D902FG
9-3 TRIAC Dimming function
Triac
Dimme
VIN
Gate
Bleeder
GATE
Buffer
Current
Control
Logic
VBLDR
ISEN
Blank time
VCC
Peak
current
detection
BLDR
Conduction angle of modulation AC signal of the triac dimmer input to the VIN terminal is
detected in threshold VANG-DET. The LED current is changed by adjusting VPEAK by the detection
result.
Triac dimming range is 5% to 100%. The input voltage of VIN terminal and BLDR terminal is 0V to
1.8V.
Threshold voltage of Triac conduction angle
Range of VIN
VAng-DET≦0.14V (TYP)
0~1.8V
VIN
VANG_DET
BLDR
The bleeder current supply terminal changes depending on the input voltage to VIN terminal.
Rev 1.05
VIN terminal input voltage condition
The breeder current supply terminal
Less than 0.28V
BLDR ON
Over than 0.28V
BLDR Off
7
2012, Dec 01
TC62D902FG
9-4 Valley switch operation
The EMI noise and the switching loss are decreased by doing the switching when VDS of MOS
is the lowest. This IC detects the minimum of VDS by VSEN terminal.
When it doesn't meet the condition of turning on by TSON/T control, the valley might be
skipped.
VGATE
VDS
10. Detection function
Detection function
Over temperature
detection (OTD)
Effect
Over heating prevention
Detection
point
detection level
Internal
temperature of
IC
140°C(TYP)
Malfunction prevention by IC
Supply voltage abnormality
VCC terminal
voltage
VIN over voltage
detection (VIN-OVD)
Malfunction prevention by IC
Supply voltage abnormality
VIN terminal
voltage
Output open circuit
detection (OOD)
Over-voltage prevention by
LED open-circuit of LED
VSEN terminal
voltage
2.10V(TYP)
for 2 continuous
switching cycles
Output short circuit
Detection (OSD)
Malfunction prevention by IC
by Short-circuit of LED
VSEN terminal
voltage
0.14V(TYP)
Over current
Detection (OCD)
Over current prevention
by circuit short-circuit
ISEN terminal
voltage
2.10V(TYP)
ISEN line open detection
(IOD)
Open line of ISEN to Rsense
ISEN terminal
voltage
2.10V(TYP)
8
Release condition
Temperature falls by
20°C(TYP) or more from a
detection level
Voltage rises by
GATE terminal
4.5V(TYP)
or more
output voltage
is set to 0V, and From a detection level
2.10V(TYP)
switching
Voltage falls by
for 15 continuous control of Power
blow detection level
half AC cycles MOS is stopped.
Under voltage lockout
(UVLO)
Rev 1.05
Operation at
the time of
detection
7.5V(TYP)
Repetition of
Starting and
Stop.
The function
of UVLO
GATE terminal
output voltage
is set to 0V, and
switching
control of Power
MOS is stopped.
2012, Dec 01
TC62D902FG
11. Application figure
3
7
4
6
LED
1
TRIAC
DIMMER
-+
2
P
+3
OREF
A2
S
4
VSEN
-
VIN
D
-
1
BLDR
8
2
7
3
6
4
5
VCC
GATE
ISEN
G
GND
S
G
1
D
A1
S
2
AC ~
Rev 1.05
9
2012, Dec 01
TC62D902FG
10. Package dimension
Unit : mm
Weight: 0.07 g (Typ.)
Rev 1.05
10
2012, Dec 01
TC62D902FG
Notes on Contents
1. Block Diagrams
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or
simplified for explanatory purposes.
2. Equivalent Circuits
The equivalent circuit diagrams may be simplified or some parts of them may be omitted for
explanatory purposes.
3. Timing Charts
Timing charts may be simplified for explanatory purposes.
4. Application Circuits
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Toshiba does not grant any license to any industrial property rights by providing these examples of
application circuits.
5. Test Circuits
Components in the test circuits are used only to obtain and confirm the device characteristics.
These components and circuits are not guaranteed to prevent malfunction or failure from
occurring in the application equipment.
IC Usage Considerations
Notes on handling of ICs
[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be
exceeded, even for a moment. Do not exceed any of these ratings.
Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may
result injury by explosion or combustion.
[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow
in case of over current and/or IC failure. The IC will fully break down when used under conditions
that exceed its absolute maximum ratings, when the wiring is routed improperly or when an
abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow
and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large
current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and
insertion circuit location, are required.
[3] If your design includes an inductive load such as a motor coil, incorporate a detection circuit
into the design to prevent device malfunction or breakdown caused by the current resulting
from the inrush current at power ON or the negative current resulting from the back
electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition.
Use a stable power supply with ICs with built-in detection functions. If the power supply is
unstable, the detection function may not operate, causing IC breakdown. IC breakdown may
cause injury, smoke or ignition.
[4] Do not insert devices in the wrong orientation or incorrectly.
Make sure that the positive and negative terminals of power supplies are connected properly.
Otherwise, the current or power consumption may exceed the absolute maximum rating, and
exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may
result injury by explosion or combustion.
In addition, do not use any device that is applied the current with inserting in the wrong
orientation or incorrectly even just one time.
[5] Carefully select external components (such as inputs and negative feedback capacitors) and
load components (such as speakers), for example, power amp and regulator.
If there is a large amount of leakage current such as input or negative feedback condenser, the
IC output DC voltage will increase. If this output voltage is connected to a speaker with low input
withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over current can
cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge
Tied Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
Rev 1.05
11
2012, Dec 01
TC62D902FG
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Rev 1.05
12
2012, Dec 01