TC74AC14F
CMOS Digital Integrated Circuits
Silicon Monolithic
TC74AC14F
1. Functional Description
•
Hex Schmitt Inverter
2. General
The TC74AC14F is an advanced high speed CMOS SCHMITT INVERTER fabricated with silicon gate and doublelayer metal wiring C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low pwer dissipation.
Pin configuration and function are the same as the TC74AC04F but the inputs have hysteresis and with its
schmitt trigger function, the TC74AC14F can be used as a line receivers which will receive slow input signals.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
High speed: tpd = 5.3 ns (typ.) at VCC = 5.0 V
(2)
Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 �
(3)
Output current: |IOH|/IOL = 24 mA (min) (VCC = 4.5 V)
(4)
Balanced propagation delays: tPLH ≈ tPHL
(5)
Wide operating voltage range: VCC(opr) = 2.0 V to 5.5 V
(6)
Pin and function compatible with 74F14
4. Packaging
SOP14
Start of commercial production
1988-10
©2021
Toshiba Electronic Devices & Storage Corporation
1
2021-04-27
Rev.1.0
TC74AC14F
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2021
Toshiba Electronic Devices & Storage Corporation
2
2021-04-27
Rev.1.0
TC74AC14F
8. Truth Table
A
Y
L
H
H
L
9. System Diagram, Waveform
10. Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
VCC
-0.5 to 7.0
V
Supply voltage
Input voltage
VIN
-0.5 to VCC + 0.5
V
VOUT
-0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±50
mA
Output current
IOUT
±50
mA
VCC/ground current
ICC
±150
mA
Output voltage
Power dissipation
PD
180
mW
Storage temperature
Tstg
-65 to 150
�
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Symbol
Rating
Unit
VCC
2.0 to 5.5
V
VIN
0 to VCC
V
Output voltage
VOUT
0 to VCC
V
Operating temperature
Topr
-40 to 85
�
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
©2021
Toshiba Electronic Devices & Storage Corporation
3
2021-04-27
Rev.1.0
TC74AC14F
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T a = 25 �)
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Unit
VP
�
3.0
�
�
2.2
V
4.5
�
�
3.2
5.5
�
�
3.9
3.0
0.5
�
�
4.5
0.9
�
�
5.5
1.1
�
�
3.0
0.3
�
1.2
4.5
0.4
�
1.4
5.5
0.5
�
1.6
2.0
1.9
2.0
�
3.0
2.9
3.0
�
VN
�
VH
VOH
VOL
�
VIN = VIL
VIN = VIH
IOH = -50 µA
4.5
4.4
4.5
�
IOH = -4 mA
3.0
2.58
�
�
IOH = -24 mA
4.5
3.94
�
�
IOL = 50 µA
2.0
�
0.0
0.1
3.0
�
0.0
0.1
4.5
�
0.0
0.1
IOL = 12 mA
3.0
�
�
0.36
IOL = 24 mA
4.5
�
�
0.36
V
V
V
V
Input leakage current
IIN
VIN = VCC or GND
5.5
�
�
±0.1
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
�
�
4.0
µA
©2021
Toshiba Electronic Devices & Storage Corporation
4
2021-04-27
Rev.1.0
TC74AC14F
12.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �)
Characteristics
Symbol
Test Condition
VP
�
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
VN
VOL
VCC (V)
Min
Max
Unit
3.0
�
2.2
V
4.5
�
3.2
5.5
�
3.9
3.0
0.5
�
4.5
0.9
�
5.5
1.1
�
3.0
0.3
1.2
4.5
0.4
1.4
5.5
0.5
1.6
2.0
1.9
�
3.0
2.9
�
4.5
4.4
�
IOH = -4 mA
3.0
2.48
�
IOH = -24 mA
4.5
3.80
�
IOH = -75 mA (Note 1)
5.5
3.85
�
IOL = 50 µA
2.0
�
0.1
3.0
�
0.1
4.5
�
0.1
IOL = 12 mA
3.0
�
0.44
IOL = 24 mA
4.5
�
0.44
�
VH
VOH
Note
�
VIN = VIL
IOH = -50 µA
VIN = VIH
IOL = 75 mA
(Note 1)
V
V
V
V
5.5
�
1.65
Input leakage current
IIN
VIN = VCC or GND
5.5
�
±1.0
µA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
�
40.0
µA
Note 1: This spec indicates the capability of driving 50 Ω transmission lines.
One output should be tested within a 10 ms maximum duration.
12.3. AC Characteristics (Unless otherwise specified, T a = 25 �, Input: t r = t f = 3 ns)
Characteristics
Test Condition
VCC (V)
Min
Typ.
Max
Unit
tPLH,tPHL
CL = 50 pF
RL = 500 Ω
3.3 ± 0.3
�
8.1
13.2
ns
5.0 ± 0.5
�
6.0
9.7
Input capacitance
CIN
�
�
5
10
pF
Power dissipation capacitance
CPD
�
�
29
�
pF
Propagation delay time
Symbol
Note
(Note 1)
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC/6 (per gate)
12.4. AC Characteristics
(Unless otherwise specified, T a = -40 to 85 �, Input: t r = t f = 3 ns)
Characteristics
Propagation delay time
Input capacitance
©2021
Toshiba Electronic Devices & Storage Corporation
Symbol
Test Condition
VCC (V)
Min
Max
Unit
tPLH,tPHL
CL = 50 pF
RL = 500 Ω
3.3 ± 0.3
1.0
15.0
ns
5.0 ± 0.5
1.0
11.0
�
10
CIN
5
�
pF
2021-04-27
Rev.1.0
TC74AC14F
Package Dimensions
Unit: mm
Weight: 0.18 g (typ.)
Package Name(s)
Nickname: SOP14
©2021
Toshiba Electronic Devices & Storage Corporation
6
2021-04-27
Rev.1.0
TC74AC14F
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